BLF278

VHF push-pull power MOS transistor

Rev. 5 — 1 September 2015 Product data sheet

IMPORTANT NOTICE

Dear customer,

As of December 7th, 2015 BL RF Power of NXP Semiconductors will operate as

an independent company under the new trade name Ampleon, which will be used
in future data sheets together with new contact details.

In data sheets, where the previous Philips references is mentioned, please use
the new links as shown below.

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The copyright notice at the bottom of each page (or elsewhere in the document,
depending on the version)
- © Koninklijke Philips Electronics N.V. (year). All rights reserved -
is replaced with:
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Philips Semiconductors Product Specification

VHF push-pull power MOS transistor BLF278

FEATURES PINNING - SOT262A1

• High power gain PIN DESCRIPTION
• Easy power control 1 drain 1
• Good thermal stability 2 drain 2
• Gold metallization ensures excellent reliability. 3 gate 1
4 gate 2
APPLICATIONS 5 source
• Broadcast transmitters in the VHF frequency range.

DESCRIPTION
Dual push-pull silicon N-channel enhancement mode
vertical D-MOS transistor encapsulated in a 4-lead, 1 2
SOT262A1 balanced flange package with two ceramic d
caps. The mounting flange provides the common source g
connection for the transistors. s
g
5 5 d
CAUTION 3 4
Top view MAM098
This product is supplied in anti-static packing to prevent
damage caused by electrostatic discharge during
transport and handling. For further information, refer to
Philips specs.: SNW-EQ-608, SNW-FQ-302A, and Fig.1 Simplified outline and symbol.
SNW-FQ-302B.

QUICK REFERENCE DATA

RF performance at Th = 25 °C in a push-pull common source test circuit.

f VDS PL Gp ηD
MODE OF OPERATION
(MHz) (V) (W) (dB) (%)
CW, class-B 108 50 300 >20 >60
CW, class-C 108 50 300 typ. 18 typ. 80
CW, class-AB 225 50 250 >14 >50
typ. 16 typ. 55

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

2003 Sep 19 2
Philips Semiconductors Product Specification

VHF push-pull power MOS transistor BLF278

LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor section
VDS drain-source voltage − 125 V
VGS gate-source voltage − ±20 V
ID drain current (DC) − 18 A
Ptot total power dissipation Tmb ≤ 25 °C; total device; both − 500 W
sections equally loaded
Tstg storage temperature −65 150 °C
Tj junction temperature − 200 °C

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-mb thermal resistance from junction total device; both sections max. 0.35 K/W
to mounting base equally loaded.
Rth mb-h thermal resistance from total device; both sections max. 0.15 K/W
mounting base to heatsink equally loaded.

MRA988 MGE616
100 500
handbook, halfpage handbook, halfpage
Ptot
ID (W)
(A) 400
(2)

(1)
(1) (2) 300

10

200

100

1 0
1 10 100 500 0 40 80 120 160
VDS (V) Th (°C)

Total device; both sections equally loaded. Total device; both sections equally loaded.
(1) Current is this area may be limited by RDSon. (1) Continuous operation.
(2) Tmb = 25 °C. (2) Short-time operation during mismatch.

Fig.2 DC SOAR. Fig.3 Power derating curves.

2003 Sep 19 3
Philips Semiconductors Product Specification

VHF push-pull power MOS transistor BLF278

CHARACTERISTICS
Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Per transistor section
V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 100 mA 125 − − V
IDSS drain-source leakage current VGS = 0; VDS = 50 V − − 2.5 mA
IGSS gate-source leakage current VGS = ±20 V; VDS = 0 − − 1 µA
VGSth gate-source threshold voltage VDS = 10 V; ID = 50 mA 2 − 4.5 V
∆VGS gate-source voltage difference VDS = 10 V; ID = 50 mA − − 100 mV
of both sections
gfs forward transconductance VDS = 10 V; ID = 5 A 4.5 6.2 − S
gfs1/gfs2 forward transconductance ratio VDS = 10 V; ID = 5 A 0.9 − 1.1
of both sections
RDSon drain-source on-state resistance VGS = 10 V; ID = 5 A − 0.2 0.3 Ω
IDSX drain cut-off current VGS = 10 V; VDS = 10 V − 25 − A
Cis input capacitance VGS = 0; VDS = 50 V; f = 1 MHz − 480 − pF
Cos output capacitance VGS = 0; VDS = 50 V; f = 1 MHz − 190 − pF
Crs feedback capacitance VGS = 0; VDS = 50 V; f = 1 MHz − 14 − pF
Cd-f drain-flange capacitance − 5.4 − pF

VGS group indicator

LIMITS LIMITS
GROUP (V) GROUP (V)
MIN. MAX. MIN. MAX.
A 2.0 2.1 O 3.3 3.4
B 2.1 2.2 P 3.4 3.5
C 2.2 2.3 Q 3.5 3.6
D 2.3 2.4 R 3.6 3.7
E 2.4 2.5 S 3.7 3.8
F 2.5 2.6 T 3.8 3.9
G 2.6 2.7 U 3.9 4.0
H 2.7 2.8 V 4.0 4.1
J 2.8 2.9 W 4.1 4.2
K 2.9 3.0 X 4.2 4.3
L 3.0 3.1 Y 4.3 4.4
M 3.1 3.2 Z 4.4 4.5
N 3.2 3.3

2003 Sep 19 4
Philips Semiconductors Product Specification

VHF push-pull power MOS transistor BLF278

MGE623 MGE622
0 30
handbook, halfpage handbook, halfpage
T.C.
(mV/K) ID
−1 (A)

20
−2

−3
10

−4

−5 0
10−2 10−1 1 10 0 5 10 15
ID (A) VGS (V)

VDS = 10 V.
VDS = 10 V; Tj = 25 °C.
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current; typical Fig.5 Drain current as a function of gate-source
values per section. voltage; typical values per section.

MGE621 MGE615
400 1200
handbook, halfpage handbook, halfpage
RDSon
(mΩ) C
(pF)
300
800

200
Cis

400
100
Cos

0 0
0 50 100 150 0 20 40 60
Tj (°C) VDS (V)

VGS = 10 V; ID = 5 A. VGS = 0; f = 1 MHz.

Fig.6 Drain-source on-state resistance as a Fig.7 Input and output capacitance as functions
function of junction temperature; typical of drain-source voltage; typical values per
values per section. section.

2003 Sep 19 5
Philips Semiconductors Product Specification

VHF push-pull power MOS transistor BLF278

MGE620
400
handbook, halfpage
Crs
(pF)

300

200

100

0
0 10 20 30 40 50
VDS (V)

VGS = 0; f = 1 MHz.

Fig.8 Feedback capacitance as a function of

drain-source voltage; typical values per
section.

APPLICATION INFORMATION
Class-B operation
RF performance in CW operation in a common source push-pull test circuit. Th = 25 °C; Rth mb-h = 0.15 K/W unless
otherwise specified. RGS = 4 Ω per section; optimum load impedance per section = 3.2 + j4.3 Ω (VDS = 50 V).

f VDS IDQ PL Gp ηD
MODE OF OPERATION
(MHz) (V) (A) (W) (dB) (%)
CW, class-B 108 50 2 × 0.1 300 >20 >60
typ. 22 typ. 70
CW, class-C 108 50 VGS = 0 300 typ. 18 typ. 80

Ruggedness in class-B operation

The BLF278 is capable of withstanding a load mismatch corresponding to VSWR = 7:1 through all phases under the
following conditions: VDS = 50 V; f = 108 MHz at rated load power.

2003 Sep 19 6
Philips Semiconductors Product Specification

VHF push-pull power MOS transistor BLF278

MGE682 MGE683
30 80
handbook, halfpage handbook, halfpage
ηD
Gp
(%) (2)
(dB) (1) (1)
60
20
(2)
(1)
(2)
40

10
20

0 0
0 200 400 600 0 200 400 600
PL (W) PL (W)

Class-B operation; VDS = 50 V; IDQ = 2 × 0.1 A; f = 108 MHz; Class-B operation; VDS = 50 V; IDQ = 2 × 0.1 A; f = 108 MHz;
ZL = 3.2 + j4.3 Ω (per section); RGS = 4 Ω (per section). ZL = 3.2 + j4.3 Ω (per section); RGS = 4 Ω (per section).
(1) Th = 25 °C. (1) Th = 25 °C.
(2) Th = 70 °C. (2) Th = 70 °C.

Fig.9 Power gain as a function of load power; Fig.10 Efficiency as a function of load power;
typical values. typical values.

MGE684
600
handbook, halfpage

PL
(W)
(1)
400

(2)

200

0
0 5 10 15
Pi (W)

Class-B operation; VDS = 50 V; IDQ = 2 × 0.1 A; f = 108 MHz;

ZL = 3.2 + j4.3 Ω (per section); RGS = 4 Ω (per section).
(1) Th = 25 °C.
(2) Th = 70 °C.

Fig.11 Load power as a function of input power;

typical values.

2003 Sep 19 7
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2003 Sep 19

Philips Semiconductors
VHF push-pull power MOS transistor
+VDD1
handbook, full pagewidth
C20
C16
C21
R2

C8 C12
A R8 L11

R3
C13 C22
C9
C17

,,,, ,,,, ,,
R4 L12
D.U.T.
50 Ω L9 L13 L17 L19 C31 L21
input C3 L1 L3 L5 L7

C33 50 Ω
T1 C1 output

,,,, ,,,,
R1 R10
L22

,,
8

C5 C6 C7 C26 C27 C28 C29 C30

C2
C4 C34

L2 L4 L6 L8
L10 L14 L18 L20 C32 L23
R5
L15 MGE688
C10
C23
C14
C18
A
R6
C15

C35 R9 L16
R11
+VDD1 IC1
R7 C24
C36 C37 C11

Product Specification
C19
C25

BLF278
+VDD2

Fig.12 Class-B test circuit at f = 108 MHz.

Philips Semiconductors Product Specification

VHF push-pull power MOS transistor BLF278

List of components (see Figs 12 and 13).

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C2, C33, C34 multilayer ceramic chip capacitor; 22 pF, 500 V
note 1
C3, C4 multilayer ceramic chip capacitor; 100 pF + 68 pF
note 1 in parallel, 500 V
C5, C6, C28 film dielectric trimmer 5 to 60 pF 2222 809 08003
C7 multilayer ceramic chip capacitor; 2 × 100 pF +
note 1 1 × 120 pF in
parallel, 500 V
C8, C11, C12, multilayer ceramic chip capacitor 100 nF, 500 V 2222 852 47104
C15, C16, C19,
C36
C9, C10, C13, multilayer ceramic chip capacitor; 1 nF, 500 V
C14, C20, C25 note 1
C17, C18, C22, multilayer ceramic chip capacitor; 470 pF, 500 V
C23 note 1
C21, C24, C35 electrolytic capacitor 10 µF, 63 V
C26 multilayer ceramic chip capacitor; 2 × 15 pF +
note 1 1 × 18 pF in
parallel, 500 V
C27 multilayer ceramic chip capacitor; 3 × 15 pF in
note 1 parallel, 500 V
C29 multilayer ceramic chip capacitor; 2 × 18 pF +
note 1 1 × 15 pF in
parallel, 500 V
C30 film dielectric trimmer 2 to 18 pF 2222 809 09006
C31, C32 multilayer ceramic chip capacitor; 3 × 43 pF in
note 1 parallel, 500 V
L1, L2 stripline; note 2 43 Ω length 57.5 mm
width 6 mm
L3, L4 stripline; note 2 43 Ω length 29.5 mm
width 6 mm
L5, L6 stripline; note 2 43 Ω length 14 mm
width 6 mm
L7, L8 stripline; note 2 43 Ω length 6 mm
width 6 mm
L9, L10 stripline; note 2 43 Ω length 17.5 mm
width 6 mm
L11, L16 2 × grade 3B Ferroxcube wideband 4312 020 36642
HF chokes in parallel
L12, L15 4 turns enamelled 2 mm copper wire 85 nH length 13.5 mm
int. dia. 10 mm
leads 2 × 7 mm
L13, L14 stripline; note 2 43 Ω length 19.5 mm
width 6 mm

2003 Sep 19 9
Philips Semiconductors Product Specification

VHF push-pull power MOS transistor BLF278

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

L17, L18 stripline; note 2 43 Ω length 24.5 mm
width 6 mm
L19, L20 stripline; note 2 43 Ω length 66 mm
width 6 mm
L21, L23 stripline; note 2 50 Ω length 160 mm
width 4.8 mm
L22 semi-rigid cable; note 3 50 Ω ext. dia. 3.6 mm
outer conductor
length 160 mm
R1 metal film resistor 10 Ω, 0.4 W
R2, R7 10 turn potentiometer 50 kΩ
R3, R6 metal film resistor 3 × 12.1 Ω in
parallel, 0.4 W
R4, R5 metal film resistor 10 Ω; 0.4 W
R8, R9 metal film resistor 10 Ω ±5%, 1 W
R10 metal film resistor 4 × 10 Ω in
parallel, 1 W
R11 metal film resistor 5.11 kΩ, 1 W
IC1 voltage regulator 78L05
T1 1:1 Balun; 7 turns type 4C6 50 Ω 14 × 9 × 5 mm 4322 020 90770
coaxial cable wound around toroid
Notes
1. American Technical Ceramics capacitor, type 100B or capacitor of same quality.
2. L1 to L10, L13, L14, L17 to L21 and L23 are striplines on a double copper-clad printed-circuit board, with fibre-glass
PTFE dielectric (εr = 2.2), thickness 1⁄16 inch; thickness of copper sheet 2 × 35 µm.
3. L22 is soldered on to stripline L21.

2003 Sep 19 10
Philips Semiconductors Product Specification

VHF push-pull power MOS transistor BLF278

handbook, full pagewidth 150

130

strap
strap
strap strap

strap

100

strap

strap
strap

C20
IC1 C35 L22
V DD1 L11 C16
R11 C11 C22 C21
C8 R8
C36
50 Ω R2 and R7
C17 L11 50 Ω
T1 slider R2 output
input C9 V DD1
C12 C13 L21
R3 L12
R4 C31
C1 C3 C33
R1 L1 L3 C7 L5 L7 L9 L13 L17 L19
C5 C6 C26 C27 C29
L2 L4 L6 L8 L10 L14 L18 L20
C30
C2 C4 C28 C34
R5 C32
R6 L23
C15 L15
C10 V DD2 R10
slider R7
C14
C18 L16
R9
C23 C24
L16 C19

C25 MBC438

Dimensions in mm.

The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as an earth.
Earth connections are made by means of copper straps for a direct contact between upper and lower sheets.

Fig.13 Printed-circuit board and component layout for 108 MHz class-B test circuit.

2003 Sep 19 11
Philips Semiconductors Product Specification

VHF push-pull power MOS transistor BLF278

MGE685 MGE686
2 8
handbook, halfpage handbook, halfpage

Zi ZL
(Ω) ri (Ω) RL
1 6

XL
0 4

−1 2
xi

−2 0
25 75 125 175 25 75 125 175
f (MHz) f (MHz)

Class-B operation; VDS = 50 V; IDQ = 2 × 0.1 A; Class-B operation; VDS = 50 V; IDQ = 2 × 0.1 A;
RGS = 4 Ω (per section); PL = 300 W. RGS = 4 Ω (per section); PL = 300 W.

Fig.14 Input impedance as a function of frequency Fig.15 Load impedance as a function of frequency
(series components); typical values per (series components); typical values per
section. section.

MGE687
30
handbook, halfpage

Gp
(dB)

20

handbook, halfpage

10

Zi ZL MBA379

0
25 75 125 175
f (MHz)

Class-B operation; VDS = 50 V; IDQ = 2 × 0.1 A;

RGS = 4 Ω (per section); PL = 300 W.

Fig.17 Power gain as a function of frequency;

Fig.16 Definition of MOS impedance. typical values per section.

2003 Sep 19 12
Philips Semiconductors Product Specification

VHF push-pull power MOS transistor BLF278

Class-AB operation
RF performance in CW operation in a common source push-pull test circuit. Th = 25 °C; Rth mb-h = 0.15 K/W unless
otherwise specified. RGS = 2.8 Ω per section; optimum load impedance per section = 0.74 + j2 Ω; (VDS = 50 V).

f VDS IDQ PL Gp ηD
MODE OF OPERATION
(MHz) (V) (A) (W) (dB) (%)
CW, class-AB 225 50 2 × 0.5 250 >14 >50
typ. 16 typ. 55

Ruggedness in class-AB operation

The BLF278 is capable of withstanding a load mismatch corresponding to VSWR = 7:1 through all phases under the
following conditions: VDS = 50 V; f = 225 MHz at rated output power.

2003 Sep 19 13
Philips Semiconductors Product Specification

VHF push-pull power MOS transistor BLF278

MGE614 MGE612
20 60
handbook, halfpage handbook, halfpage
(1)
ηD
Gp (2) (%)
(1)
(dB) (2)
40

10

20

0 0
0 100 200 300 0 100 200 300
PL (W) PL (W)

Class-AB operation; VDS = 50 V; IDQ = 2 × 0.5 A; f = 225 MHz; Class-AB operation; VDS = 50 V; IDQ = 2 × 0.5 A; f = 225 MHz;
ZL = 0.74 + j2 Ω (per section); RGS = 2.8 Ω (per section). ZL = 0.74 + j2 Ω (per section); RGS = 2.8 Ω (per section).
(1) Th = 25 °C. (1) Th = 25 °C.
(2) Th = 70 °C. (2) Th = 70 °C.

Fig.18 Power gain as a function of load power; Fig.19 Efficiency as a function of load power;
typical values. typical values.

MGE613
400
handbook, halfpage
PL
(W)

300
(1)

(2)
200

100

0
0 5 10 15
Pi (W)

Class-AB operation; VDS = 50 V; IDQ = 2 × 0.5 A; f = 225 MHz;

ZL = 0.74 + j2 Ω (per section); RGS = 2.8 Ω (per section).
(1) Th = 25 °C.
(2) Th = 70 °C.

Fig.20 Load power as a function of input power;

typical values.

2003 Sep 19 14
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2003 Sep 19

Philips Semiconductors
handbook, full pagewidth

VHF push-pull power MOS transistor

+VDD1
C22
C14
C23

R2

C10 R8 L14
A

C15
R3
C11 C24
C8
C16

,,, L1

C1
C3
,,, L4
R4

L6 L8 L10
D.U.T.

,,,,
L12
L15
L18 L20 C31

C33
,,
L22

,,, ,,,
50 Ω R1 R10 50 Ω

,,,, ,,
L2 L23
input C5 C6 C7 C20 C21 C28 C29 C30 output
C2
C4 C34

L3 L5 L7 L9 L11
15

L13 L19 L21 C32 L24

R5
L16 MGE617
C9 C17
C12
C25

A C18
R6
C13

C35
R11 R9 L17
+VDD1 IC1
R7
C38 C37 C36 C26

C19
C27

+VDD2

Product Specification
BLF278
Fig.21 Class-AB test circuit at f = 225 MHz.
Philips Semiconductors Product Specification

VHF push-pull power MOS transistor BLF278

List of components (see Figs 21 and 22).

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C2 multilayer ceramic chip capacitor; 27 pF, 500 V
note 1
C3, C4, C31, C32 multilayer ceramic chip capacitor; 3 × 18 pF
note 1 in parallel, 500 V
C5 film dielectric trimmer 4 to 40 pF 2222 809 08002
C6, C30 film dielectric trimmer 2 to 18 pF 2222 809 09006
C7 multilayer ceramic chip capacitor; 100 pF, 500 V
note 1
C8, C9, C15, C18 MKT film capacitor 1 µF, 63 V 2222 371 11105
C10, C13, C14, multilayer ceramic chip capacitor 100 nF, 50 V 2222 852 47104
C19, C36
C11, C12 multilayer ceramic chip capacitor; 2 × 1 nF in parallel,
note 1 500 V
C16, C17 electrolytic capacitor 220 µF, 63 V
C20 multilayer ceramic chip capacitor; 3 × 33 pF in
note 1 parallel, 500 V
C21 film dielectric trimmer 2 to 9 pF 2222 809 09005
C22, C27, C37, multilayer ceramic chip capacitor; 1 nF, 500 V
C38 note 1
C23, C26, C35 electrolytic capacitor 10 µF, 63 V
C24, C25 multilayer ceramic chip capacitor; 2 × 470 pF in
note 1 parallel, 500 V
C28 multilayer ceramic chip capacitor; 2 × 10 pF +
note 1 1 × 18 pF in
parallel, 500 V
C29 multilayer ceramic chip capacitor; 2 × 5.6 pF in
note 1 parallel, 500 V
C33, C34 multilayer ceramic chip capacitor; 5.6 pF, 500 V
note 1
L1, L3, L22, L24 stripline; note 2 50 Ω length 80 mm
width 4.8 mm
L2, L23 semi-rigid cable; note 3 50 Ω ext. dia. 3.6 mm
outer conductor
length 80 mm
L4, L5 stripline; note 2 43 Ω length 24 mm
width 6 mm
L6, L7 stripline; note 2 43 Ω length 14.5 mm
width 6 mm
L8, L9 stripline; note 2 43 Ω length 4.4 mm
width 6 mm
L10, L11 stripline; note 2 43 Ω length 3.2 mm
width 6 mm
L12, L13 stripline; note 2 43 Ω length 15 mm
width 6 mm

2003 Sep 19 16
Philips Semiconductors Product Specification

VHF push-pull power MOS transistor BLF278

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

L14, L17 2 × grade 3B Ferroxcube 4312 020 36642
wideband HF chokes in parallel
L15, L16 13⁄4 turns enamelled 2 mm copper 40 nH int. dia. 10 mm
wire leads 2 × 7 mm
space 1 mm
L18, L19 stripline; note 2 43 Ω length 13 mm
width 6 mm
L20, L21 stripline; note 2 43 Ω length 29.5 mm
width 6 mm
R1 metal film resistor 10 Ω, 0.4 W
R2, R7 10 turns potentiometer 50 kΩ
R3, R6 metal film resistor 1 kΩ, 0.4 W
R4, R5 metal film resistor 2 × 5.62 Ω, in
parallel, 0.4 W
R8, R9 metal film resistor 10 Ω ±5%, 1 W
R10 metal film resistor 4 × 42.2 Ω in
parallel, 1 W
R11 metal film resistor 5.11 kΩ, 1 W
IC1 voltage regulator 78L05
Notes
1. American Technical Ceramics capacitor, type 100B or other capacitor of the same quality.
2. L1, L3 to L13, L18 to L22 and L24 are microstriplines on a double copper-clad printed-circuit board, with fibre-glass
reinforced PTFE dielectric (εr = 2.2), thickness 1⁄16 inch; thickness of copper sheet 2 × 35 µm.
3. L2 and L23 are soldered on to striplines L1 and L24 respectively.

2003 Sep 19 17
Philips Semiconductors Product Specification

VHF push-pull power MOS transistor BLF278

119 130
handbook, full pagewidth

strap
strap

strap strap
Hollow Hollow
rivets rivets 100

strap strap

strap
strap

C24 C22
IC1 to R2,R7 C14
VDD1
R11 C36 L14 C23
C16 R8
L2 C38 C15
C35 L14 L22
C37
slider R2 C11 VDD1
L1 C8
L15
C10 R3
C3 R4 R10
C1 C30 C31C33
L4 C6 L6 L8 L10 L12 L18 C28 L20
50 Ω R1 C5 C20 C21 50 Ω
C7 C29
input output
L5 L7 L9 L11 L13 L19 L21
C2 C34
C4 R5 C32
C13 R6
L16 VDD2
slider R7 C12 C9
L3
L17 L23 L24
C18 R9
C17
L17 C19 C26

C25 C27 MBC436

Dimensions in mm.

The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as an earth.
Earth connections are made by means of copper straps for a direct contact between upper and lower sheets.

Fig.22 Printed-circuit board and component layout for 225 MHz class-AB test circuit.

2003 Sep 19 18
Philips Semiconductors Product Specification

VHF push-pull power MOS transistor BLF278

MGE611 MGE625
2 3
handbook, halfpage handbook, halfpage
zi
ZL XL
(Ω)
(Ω)
1
ri
2

RL
xi 1
−1

–2 0
150 200 250 150 200 250
f (MHz) f (MHz)

Class-AB operation; VDS = 50 V; IDQ = 2 × 0.5 A; Class-AB operation; VDS = 50 V; IDQ = 2 × 0.5 A;
RGS = 2.8 Ω (per section); PL = 250 W. RGS = 2.8 Ω (per section); PL = 250 W.

Fig.23 Input impedance as a function of frequency Fig.24 Load impedance as a function of frequency
(series components); typical values per (series components); typical values per
section. section.

MGE624
20
handbook, halfpage

Gp
(dB)

handbook, halfpage
10

Zi ZL MBA379

0
150 200 250
f (MHz)

Class-AB operation; VDS = 50 V; IDQ = 2 × 0.5 A;

RGS = 2.8 Ω (per section); PL = 250 W.

Fig.26 Power gain as a function of frequency;

Fig.25 Definition of MOS impedance. typical values per section.

2003 Sep 19 19
Philips Semiconductors Product Specification

VHF push-pull power MOS transistor BLF278

BLF278 scattering parameters

VDS = 50 V; ID = 500 mA; note 1

s11 s21 s12 s22

f (MHz)
|s11| ∠Φ |s21| ∠Φ |s12| ∠Φ |s22| ∠Φ
5 0.87 −142.1 60.05 104.3 0.00 −19.4 0.83 160.9
10 0.88 −159.8 32.09 91.4 0.00 0.68 167.5 165.8
20 0.88 −169.0 15.70 77.3 0.01 13.4 0.62 177.6
30 0.88 −171.2 9.98 68.4 0.01 3.4 0.64 −175.8
40 0.89 −172.2 6.99 61.0 0.01 −4.4 0.66 −171.2
50 0.91 −172.9 5.24 55.0 0.01 −10.3 0.70 −168.1
60 0.92 −173.5 4.08 49.6 0.01 −15.0 0.74 −166.8
70 0.93 −174.1 3.26 44.9 0.01 −18.3 0.78 −166.5
80 0.94 −174.7 2.66 41.0 0.01 −19.8 0.80 −166.5
90 0.95 −175.2 2.22 37.5 0.00 −19.7 0.83 −166.7
100 0.95 −175.7 1.88 34.0 0.00 −18.0 0.85 −167.4
125 0.97 −176.9 1.27 26.8 0.00 −1.9 0.88 −169.4
150 0.97 −177.9 0.91 22.7 0.00 35.3 0.91 −170.0
175 0.98 −178.7 0.69 19.5 0.00 65.3 0.94 −170.8
200 0.98 −179.5 0.54 16.0 0.00 78.0 0.95 −172.4
250 0.99 179.2 0.35 12.1 0.01 86.7 0.96 −174.0
300 0.99 178.1 0.25 9.1 0.01 87.8 0.98 −175.5
350 0.99 177.1 0.19 8.2 0.01 90.3 0.98 −176.5
400 0.99 176.1 0.14 7.2 0.01 91.4 0.99 −177.6
450 0.99 175.1 0.11 8.1 0.02 92.2 0.99 −178.3
500 0.99 174.2 0.09 9.7 0.02 91.5 0.99 −179.2
600 0.99 172.4 0.07 14.8 0.02 91.4 0.99 179.5
700 0.99 170.7 0.05 24.0 0.03 91.6 0.99 178.3
800 0.99 168.9 0.04 35.6 0.03 92.5 1.00 177.1
900 0.99 167.1 0.04 46.0 0.04 93.1 1.00 176.0
1000 0.99 165.2 0.04 60.3 0.04 94.1 1.00 175.0

Note
1. For more extensive s-parameters see internet:
http://www.semiconductors.philips.com/markets/communications/wirelesscommunications/broadcast.

2003 Sep 19 20
Philips Semiconductors Product Specification

VHF push-pull power MOS transistor BLF278

PACKAGE OUTLINE
Flanged double-ended ceramic package; 2 mounting holes; 4 leads SOT262A1

A
F

D1

U1 B

q C

H1 w2 M C M c

1 2

H U2 p E1 E

A w1 M A M B M
3 4

b w3 M Q
e

0 5 10 mm

scale

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT A b c D D1 e E E1 F H H1 p Q q U1 U2 w1 w2 w3

5.77 5.85 0.16 22.17 21.98 10.27 10.29 1.78 21.08 17.02 3.28 2.85 34.17 9.91
mm 11.05 27.94 0.25 0.51 0.25
5.00 5.58 0.10 21.46 21.71 10.05 10.03 1.52 19.56 16.51 3.02 2.59 33.90 9.65
0.227 0.230 0.006 0.873 0.865 0.404 0.405 0.070 0.830 0.670 0.129 0.112 1.345 0.390
inches 0.435 1.100 0.010 0.020 0.010
0.197 0.220 0.004 0.845 0.855 0.396 0.396 0.060 0.770 0.650 0.119 0.102 1.335 0.380

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION

SOT262A1 99-03-29

2003 Sep 19 21
Philips Semiconductors Product Specification

VHF push-pull power MOS transistor BLF278

DATA SHEET STATUS

DATA SHEET PRODUCT

LEVEL DEFINITION
STATUS(1) STATUS(2)(3)
I Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

DEFINITIONS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes  Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2003 Sep 19 22
Philips Semiconductors – a worldwide company

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825

For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.

© Koninklijke Philips Electronics N.V. 2003 SCA75

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Printed in The Netherlands 613524/04/pp23 Date of release: 2003 Sep 19 Document order number: 9397 750 11599