2N3055

SILICON NPN TRANSISTOR

SGS-THOMSON PREFERRED SALESTYPE

DESCRIPTION
The 2N3055 is a silicon epitaxial-base NPN
transistor in Jedec TO-3 metal case. It is intended
for power switching circuits, series and shunt
regulators, output stages and high fidelity
amplifiers.
1
2

TO-3

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symb ol Parameter Valu e Unit
V CBO Collector-Base Voltage (IE = 0) 100 V
V CER Collector-Emitter Voltage (RBE = 100Ω) 70 V
V CEO Collector-Emitter Voltage (I B = 0) 60 V
V EBO Emitter-Base Voltage (I C = 0) 7 V
IC Collector Current 15 A
IB Base Current 7 A
o
P tot T otal Dissipation at T c ≤ 25 C 115 W
o
T s tg Storage Temperature -65 to 200 C
o
Tj Max. O perating Junction Temperature 200 C

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2N3055

THERMAL DATA
o
R thj -ca se Thermal Resistance Junction-case Max 1.5 C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symbo l Parameter T est Con ditio ns Min . T yp. Max. Unit
I CEV Collector Cut-off V CE = 100 V 1 mA
Current (V BE = -1.5V) V CE = 100 V T j = 150 o C 5 mA
I CEO Collector Cut-off V CE = 30 V 0.7 mA
Current (I B = 0)
I EBO Emitter Cut- off Current V EB = 7 V 5 mA
(I C = 0)
V CEO(sus) ∗ Collector-Emitter I C = 200 mA 60 V
Sustaining Voltage
V CER(sus )∗ Collector-Emitter I C = 200 mA R BE = 100 Ω 70 V
Sustaining Voltage
V CE(sat) ∗ Collector-Emitter IC = 4 A IB = 400 mA 1 V
Saturation Voltage I C = 10 A IB = 3.3 A 3 V
V BE ∗ Base-Emitter Voltage IC = 4 A V CE = 4 V 1.5 V
h FE∗ DC Current Gain IC = 0.5 A VCE = 4 V Gr oup 4 20 50
IC = 0.5 A VCE = 4 V Gr oup 5 35 75
IC = 0.5 A VCE = 4 V Gr oup 6 60 145
IC = 0.5 A VCE = 4 V Gr oup 7 120 250
IC = 4 A V CE = 4 V 20 70
IC = 10 A VCE = 4 V 5
h FE1 /hFE1 ∗ DC Current Gain I C = 0.5 A VCE = 4 V 1.6
fT Transition frequency IC = 1 A V CE = 4 V 2.5 MHz
I s /b∗ Second Breakdown V CE = 40 V 2.87 A
Collector Current
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

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 2N3055

TO-3 (H) MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.

A 11.7 0.460

B 0.96 1.10 0.037 0.043

C 1.70 0.066

D 8.7 0.342

E 20.0 0.787

G 10.9 0.429

N 16.9 0.665

P 26.2 1.031

R 3.88 4.09 0.152 0.161

U 39.50 1.555

V 30.10 1.185

A D
P

G C E
U

B
O
N

P003N

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2N3055

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.

 1995 SGS-THOMSON Microelectronics - All Rights Reserved

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