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Fifth semester B.E. , June/July 2013
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l-! e: hrs. Max. Marks:100
'.ut Note: l. Answer FIVE full questions, selecting il;
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at least TWO questionsfrom each part. ,,, I i'
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2. Use of Smith chart is permitted. :::

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a.
:o() on the transrp$sion line. (10 Marks)
has R : 10 fJ's/km, L : 0.0037,,1pfrryryftm, C:
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4a b. An open wirewifffi
lne 0.003t,,,FF$V, 0.0083 prflkm,
G:: 0.4 prU/km.
G uU/km. D6himine
Ddftrmine Zo, a.0,
Zn, a, F, y, Vp w : 1000 radbn$/sec.
Vn if w: radlan*/sec. (05 Marks)
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c. Define the followingi:"'= , jlq),
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coa i) Reflection coefficie ii) Transmission coefll€fdnt.
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(!+c{ Also, derive the relationship'between them?
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-O a. With a neat diagram, explain the,rwgr(jng of a two-hole directional coupler. Also derive the
o> Scattering matrix of the same. 'u,".;* (10 Marks)
o2 b. A load impedance of 26-l6A's is:::fe4uir.ed to be connected to a line of characteristic
6= impedance 100 f)'s by using a shib*:eircuited stub of length, I located at a distance, d from
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the load. The wavelength of operation is I m. Using Smith chart find d and l. Write the
o! procedural steps. {r;; '" (10 Marks)
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6- a. With a neat diagram, explain the construction, working and application of an Isolator based
(10 Marks)
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Compute: i) Maximum output power, ii) Resonant frequency. " (05,Marks)
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o= A typical Silicon BARRIT diode has the following parameters:
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tr> Relative dielectric constant, er: I2.5
Donor concentration, N :3.2 x 1022lnf , eo : 8.854 x l0-12
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Drift length, L: 8 prm
{.) Calculate: i) Critical voltage, ii) Breakdown voltage, iii) Breakdown electric field. 1os Marks)
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4 a. Explain with a neat diagram the construction and working of PIN diode and Schottky barrier
o diode. (10 Marks)
b. Explain S-matrix representation of multi-port network. (04 Marks)
c. State and explain the properties of S-matrix. (06 Marks)

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5a.Withaneatdiagram,explain,n"*offi,ecisiont1pevariableattenuator.(06Marks)
b. With a neat diagram, explain the working of a E-plane Tee junction. Also derive its
Scattering matrix. (10 Marks)
c. A three port circulator has an insertion loss of 2 dB, isolation loss of 25 dB arrd
,l;;,. VSWR :2.0. Find the S-matrix. (04,r\44rks)
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'a'.Explain the construction and field pattern for microstrip line. ffi Markg
I b," What are the different losses taking place in microstrip line? Explain. .-106 Marks)
c. strip line and microstrip line.
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7 a. Stanifig,,,$om the power density of an isotropic antenna, derive an expression for the Radar-
range eQua1ion. Also, explain the factors influencing the maximum $pngc of the radar.
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b. '
Define the fu'ilowing related to radar system: . .., -$
i) Maximum uhambiguous range
ii) Doppler efflect ",1
iii) Blind speed .,,,.,.,,,:,
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iv) Duty cycle (04 Marksf

c. A 10 GHz Radar has the fo,ll$a'ing characteristic;:
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Peak transmitter power:21S0 t<W
p.r.f. : 1500 PPS :.: ,,i.,,
Pulse width: 0.8 trrsec
Power gain of the antenna : 2500'-,,,...";i-
Minimum detectable peak signal pgwer by receiver : 10-14 watts
Effective area of the antenna: 10 m2.
If this radar were to be used to detect a target'.pf 2m2 equivalent cross section, find the
lollowing:
D Maximum possible *rrg" i,' ..,.,,,,*,.,
iD Unambiguous range ,,,:-,,,,,.,,1:

iii) Duty cycle

i r) Average power ..,"1f'.......,,... (06 Marks)
8 a. With ngii$lock diagram, explain the principle and working of an J-\{TI Radar. (08 Marks)
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b. Am MTI Radar used PRF of 1000 PPS at 4 GHz. Compuie the lowest plind speed -'ioo of th.-
*#;4*o calculate the second and third lowest blind speed of the ruiafl", ,-- *".u0
c. WrJte brief note on any TWO: .:. aJ^p,:!
i) ., Delay line canceller
' ii) CW Doppler Radar
,,,, iii) Pulsed Radar system

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