TC4467 1

TC4468
TC4469

LOGIC-INPUT CMOS QUAD DRIVERS

2
FEATURES GENERAL DESCRIPTION
■ High Peak Output Current ............................... 1.2A The TC446X family of four-output CMOS buffer/drivers
■ Wide Operating Range ............................ 4.5 to 18V are an expansion from our earlier single- and dual-output
■ Symmetrical Rise and Fall Times ................ 25nsec drivers. Each driver has been equipped with a two-input
■ Short, Equal Delay Times ............................ 75nsec logic gate for added flexibility.
■
■
Latchproof! Withstands 500mA Inductive Kickback
3 Input Logic Choices
— AND / NAND / AND + Inv
The TC446X drivers can source up to 250 mA into loads
referenced to ground. Heavily loaded clock lines, coaxial
cables, and piezoelectric transducers can all be easily
3
■ 2kV ESD Protection on All Pins driven with the 446X series drivers. The only limitation on
loading is that total power dissipation in the IC must be kept
within the power dissipation limits of the package.
APPLICATIONS The TC446X series will not latch under any conditions
within their power and voltage ratings. They are not subject
■ General-Purpose CMOS Logic Buffer
■
■
Driving All Four MOSFETs in an H-Bridge
Direct Small Motor Driver
to damage when up to 5V of noise spiking (either polarity)
occurs on the ground line. They can accept up to half an amp
of inductive kickback current (either polarity) into their out-
4
■ Relay or Peripheral Drivers puts without damage or logic upset. In addition, all terminals
■ CCD Driver are protected against ESD to at least 2000V.
■ Pin-Switching Network Driver

ORDERING INFORMATION
Part No.
TC446xCOE
Package
16-Pin SOIC (Wide)
Temp. Range
0° to +70°C
5
TC446xCPD 14-Pin Plastic DIP 0° to +70°C
TC446xEJD 14-Pin CerDIP – 40° to +85°C
TC446xMJD 14-Pin CerDIP – 55° to +125°C
x indicates a digit must be added in this position to define the device
input configuration: TC446x — 7 NAND

LOGIC DIAGRAMS
8
9
AND
AND with INV 6
TC4467 VDD TC4468 VDD TC4469 VDD TC446X
VDD
14 14 14
1 1 1
1A 13 1A 13 1A 13
2 1Y 2 1Y 2 1Y
1B 1B 1B

2A
2B
3
4
12
2Y
2A
2B
3
4
12
2Y
2A
2B
3
4
12
2Y
OUTPUT 7
5 5 5
3A 11 3A 11 3A 11
6 3Y 6 3Y 6 3Y
3B 3B 3B
8 8 8
4A 10 4A 10 4A 10
9 4Y 9 4Y 9 4Y
4B 4B 4B

7 7 7
GND GND GND
8
TC4467/8/9-6 10/21/96
TELCOM SEMICONDUCTOR, INC. 4-261
 LOGIC-INPUT CMOS
QUAD DRIVERS
TC4467
TC4468
TC4469

ABSOLUTE MAXIMUM RATINGS* Package Thermal Resistance

Supply Voltage ......................................................... +20V
Input Voltage ......................... (GND – 5V) to (VDD + 0.3V)
Maximum Chip Temperature
Operating ........................................................ +150°C
Storage ............................................. – 65° to +150°C
Maximum Lead Temperature
(Soldering, 10 sec) ......................................... +300°C
Operating Ambient Temperature Range
C Device .................................................. 0° to +70°C
E Device ............................................. – 40° to +85°C
M Device ........................................... – 55° to +125°C
Package Power Dissipation (TA ≤ 70°C)
14-Pin CerDIP ................................................840mW
14-Pin Plastic DIP ...........................................800mW
16-Pin Wide SOIC ..........................................760mW
14-Pin CerDIP RθJ-A ...................................... 100°C/W
RθJ-C ......................................... 23°C/W
14-Pin Plastic DIP RθJ-A ......................................... 80°C/W
RθJ-C ......................................... 35°C/W
16-Pin Wide SOIC RθJ-A ......................................... 95°C/W
RθJ-C ......................................... 28°C/W
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operational sections of the specifications is not implied.
Exposure to Absolute Maximum Rating Conditions for extended periods
may affect device reliability.

ELECTRICAL CHARACTERISTICS: Measured at TA = +25°C with 4.5V ≤ VDD ≤ 18V, unless otherwise specified.
Symbol Parameter Test Conditions Min Typ Max Unit
Input
VIH Logic 1, High Input Voltage Note 3 2.4 — VDD V
VIL Logic 0, Low Input Voltage Note 3 0 — 0.8 V
IIN Input Current 0V ≤ VIN ≤ VDD –1 — 1 µA
Output
VOH High Output Voltage ILOAD = 100µA (Note 1) VDD – 0.025 — — V
VOL Low Output Voltage ILOAD = 10mA (Note 1) — — 0.15 V
RO Output Resistance IOUT = 10mA, VDD = 18V — 10 15 Ω
IPK Peak Output Current — 1.2 — A
IDC Continuous Output Current Single Output — — 300 mA
Total Package 500
I Latch-Up Protection 4.5V ≤ VDD ≤ 16V 500 — — mA
Withstand Reverse Current
Switching Time
tR Rise Time Figure 1 — 15 25 nsec
tF Fall Time Figure 1 — 15 25 nsec
tD1 Delay Time Figure 1 — 40 75 nsec
tD2 Delay Time Figure 1 — 40 75 nsec
Power Supply
IS Power Supply Current — 1.5 4 mA
VDD Power Supply Voltage Note 2 4.5 — 18 V

TRUTH TABLE
Part No. TC4467 NAND TC4468 AND TC4469 AND/INV
INPUTS A H H L L H H L L H H L L
INPUTS B H L H L H L H L H L H L
OUTPUTS TC446X L H H H H L L L L H L L
H = High L = Low

4-262 TELCOM SEMICONDUCTOR, INC.

LOGIC-INPUT CMOS
QUAD DRIVERS
TC4467
1
TC4468
TC4469

ELECTRICAL CHARACTERISTICS: Measured throughout operating temperature range with 4.5V ≤ VDD ≤ 18V,

Symbol Parameter
unless otherwise specified.
Test Conditions Min Typ Max Unit 2
Input
VIH Logic 1, High Input Voltage (Note 3) 2.4 — — V
VIL Logic 0, Low Input Voltage (Note 3) — — 0.8 V
IIN Input Current 0V ≤ VIN ≤ VDD – 10 — 10 µA
Output
VOH
VOL
High Output Voltage
Low Output Voltage
ILOAD = 100 µA (Note 1)
ILOAD = 10 mA (Note 1)
VDD – 0.025
—
—
—
—
0.30
V
V 3
RO Output Resistance IOUT = 10 mA, VDD = 18V — 20 30 Ω
IPK Peak Output Current — 1.2 — A
I Latch-Up Protection 4.5V ≤ VDD ≤ 16V 500 — — mA
Withstand Reverse Current
Switching Time
tR Rise Time Figure 1 — — 50 nsec
tF
tD1
Fall Time
Delay Time
Figure 1
Figure 1
—
—
—
—
50
100
nsec
nsec
4
tD2 Delay Time Figure 1 — — 100 nsec
Power Supply
IS Power Supply Current — — 8 mA
IS Power Supply Voltage Note 2 4.5 — 18 V
NOTES: 1. Totem-pole outputs should not be paralleled because the propagation delay differences from one to the other could cause one driver to
drive high a few nanoseconds before another. The resulting current spike, although short, may decrease the life of the device.
2. When driving all four outputs simultaneously in the same direction, VDD shall be limited to 16V. This reduces the chance that internal
dv/dt will cause high-power dissipation in the device.
5
3. The input threshold has about 50 mV of hysteresis centered at approximately 1.5V. Slow moving inputs will force the device to
dissipate high peak currents as the input transitions through this band. Input rise times should be kept below 5 µs to avoid high internal
peak currents during input transitions. Static input levels should also be maintained above the maximum or below the minimum input
levels specified in the "Electrical Characteristics" to avoid increased power dissipation in the device.

PIN CONFIGURATIONS

16-Pin SOIC (Wide) 14-Pin Plastic DIP/CerDIP

6
1A 1 16 VDD
1A 1 14 VDD
1B 2 15 VDD
1B 2 13 1Y
2A 3 14 1Y
2B

3A
4
TC4467/8/9
13 2Y

3Y
2A 3

2B 4 TC4467/8/9
12 2Y

11 3Y
7
5 12
3B 6 11 4Y 3A 5 10 4Y
GND 7 10 4B 3B 6 9 4B
GND 8 9 4A
GND 7 8 4A

8
TELCOM SEMICONDUCTOR, INC. 4-263
 LOGIC-INPUT CMOS
QUAD DRIVERS
TC4467
TC4468
TC4469

Supply Bypassing Three components make up total package power

dissipation:
Large currents are required to charge and discharge
large capacitive loads quickly. For example, charging a (1) Load-caused dissipation (PL)
1000 pF load to 18V in 25nsec requires 0.72A from the (2) Quiescent power (PQ)
device's power supply. (3) Transition power (PT).
To guarantee low supply impedance over a wide fre-
quency range, a 1 µF film capacitor in parallel with one or two A capacitive-load-caused dissipation (driving MOSFET
low-inductance 0.1 µF ceramic disk capacitors with short gates), is a direct function of frequency, capacitive load, and
lead lengths (<0.5 in.) normally provide adequate bypass- supply voltage. The power dissipation is:
ing.
PL = f C VS2,
Grounding
The TC4467 and TC4469 contain inverting drivers. where: f = Switching frequency
Potential drops developed in common ground impedances C = Capacitive load
from input to output will appear as negative feedback and VS = Supply voltage.
degrade switching speed characteristics. Instead, individual
ground returns for input and output circuits, or a ground A resistive-load-caused dissipation for ground-refer-
plane, should be used. enced loads is a function of duty cycle, load current, and
load voltage. The power dissipation is:
Input Stage
PL = D (VS – VL) IL,
The input voltage level changes the no-load or quies-
cent supply current. The N-channel MOSFET input stage
transistor drives a 2.5 mA current source load. With logic "0" where: D = Duty cycle
outputs, maximum quiescent supply current is 4 mA. Logic VS = Supply voltage
"1" output level signals reduce quiescent current to 1.4 mA VL = Load voltage
maximum. Unused driver inputs must be connected to VDD IL = Load current.
or VSS. Minimum power dissipation occurs for logic "1"
outputs. A resistive-load-caused dissipation for supply-refer-
The drivers are designed with 50 mV of hysteresis. This enced loads is a function of duty cycle, load current, and
provides clean transitions and minimizes output stage cur- output voltage. The power dissipation is:
rent spiking when changing states. Input voltage thresholds
are approximately 1.5V, making any voltage greater than PL = D VO IL,
1.5V up to VDD a logic 1 input . Input current is less than 1 µA
over this range. where: f = Switching frequency
VO = Device output voltage
Power Dissipation IL = Load current.
The supply current versus frequency and supply current
versus capacitive load characteristic curves will aid in deter- Quiescent power dissipation depends on input signal
mining power dissipation calculations. TelCom Semicon- duty cycle. Logic HIGH outputs result in a lower power
ductor's CMOS drivers have greatly reduced quiescent DC dissipation mode, with only 0.6 mA total current drain (all
power consumption. devices driven). Logic LOW outputs raise the current to 4 mA
Input signal duty cycle, power supply voltage and load maximum. The quiescent power dissipation is:
type, influence package power dissipation. Given power
dissipation and package thermal resistance, the maximum PQ = VS (D (IH) + (1–D)IL),
ambient operating temperature is easily calculated. The 14-
pin plastic package junction-to-ambient thermal resistance where: IH = Quiescent current with all outputs LOW
is 83.3°C/W. At +70°C, the package is rated at 800mW (4 mA max)
maximum dissipation. Maximum allowable chip tempera- IL = Quiescent current with all outputs HIGH
ture is +150°C. (0.6 mA max)
D = Duty cycle
VS =Supply voltage.

4-264 TELCOM SEMICONDUCTOR, INC.

LOGIC-INPUT CMOS
QUAD DRIVERS
TC4467
1
TC4468
TC4469

Transition power dissipation arises in the Maximum operating temperature:

complementary configuration (TC446X) because the
output stage N-channel and P-channel MOS transistors
are ON simultaneously for a very short period when the
TJ – θJA (PD) = 141°C, 2
output changes. The transition power dissipation is where: TJ = Maximum allowable junction temperature
approximately: (+150°C)
θJA = Junction-to-ambient thermal resistance
PT = f VS (10 3 10–9). (83.3°C/W) 14-pin plastic package.

Package power dissipation is the sum of load, quies- NOTE: Ambient operating temperature should not exceed +85°C for
cent and transition power dissipations. An example shows
the relative magnitude for each term:
"EJD" device or +125°C for "MJD" device.
3
C = 1000 pF capacitive load
VS = 15V
D = 50%
f = 200 kHz
PD = Package Power Dissipation = PL + PQ + PT
= 45 mW + 35 mW + 30 mW = 110 mW. 4
VDD

1 µF FILM 0.1 µF CERAMIC

14 +5V
90%
1A
1B
1
2
13 VOUT
470 pF INPUT
(A, B)
5
3 10%
2A 12 0V
4
2B
VDD
5 90% 90%
3A 11 tD1 tD2
6 OUTPUT tR tF
3B
8 10% 10%
4A 10 0V
4B
9

7 Input: 100 kHz, square wave,

6
tRISE = tFALL ≤ 10nsec

Figure 1. Switching Time Test Circuit

8
TELCOM SEMICONDUCTOR, INC. 4-265
 LOGIC-INPUT CMOS
QUAD DRIVERS
TC4467
TC4468
TC4469

TYPICAL CHARACTERISTICS
Rise Time vs. Supply Voltage Fall Time vs. Supply Voltage
140 140
2200 pF
120 120 2200 pF

100

t (FALL) (nsec)
1600 pF 100 1500 pF
t (RISE) (nsec)

80 1000 pF 80
1000 pF
60 60

40 470 pF 40 470 pF

20 100 pF 20 100 pF

0 0
3 5 7 9 11 13 15 17 19 3 5 7 9 11 13 15 17 19
VSUPPLY (V) VSUPPLY (V)

Rise Time vs. Capacitive Load Fall Time vs. Capacitive Load
140 140

120 5V 120 5V
t (FALL) (nsec)

100 100
t (RISE) (nsec)

80 80
10V 10V
60 15V 60 15V

40 40

20 20

0 0
100 1000 10,000 100 1000 10,000
C LOAD (pF) C LOAD (pF)

Rise/Fall Times vs. Temperature Propagation Delay Time vs. Supply Voltage
25 80
VSUPPLY = 17.5V
CLOAD = 470 pF C LOAD = 470 pF
20
DELAY TIME (nsec)

t (FALL) 60
tD1
TIME (nsec)

15
t (RISE)
40
10 tD2

20
5

0 0
–50 –25 0 25 50 75 100 125 4 6 8 10 12 14 16 18
TEMPERATURE (°C) V SUPPLY (V)

4-266 TELCOM SEMICONDUCTOR, INC.

LOGIC-INPUT CMOS
QUAD DRIVERS
TC4467
1
TC4468
TC4469

TYPICAL CHARACTERISTICS (Cont.)

140
Input Amplitude vs. Delay Times
70
Propagation Delay Times vs. Temperature 2
VDD = 12V
120 VDD = 17.5V
CLOAD = 470 pF
DELAY TIME (nsec)

DELAY TIME (nsec)

INPUT RISING 60 t D1
100 VIN = 0, 5V

80 t D2 50
tD2
60

40
INPUT FALLING t D1
40
3
30
20

0 20
1 2 3 4 5 6 7 8 9 10 –60 –40 –20 0 20 40 60 80 100 120
V DRIVE (V) TEMPERATURE (°C)

Quiescent Supply Current vs. Supply Voltage Quiescent Supply Current vs. Temperature
4
2.5 3.5
VDD = 17.5V
3.0
2.0
I QUIESCENT (mA)

2.5
I QUIESCENT (mA)

1.5 OUTPUTS = 0

1.0
2.0

1.5
OUTPUTS LOW
5
OUTPUTS HIGH
1.0
0.5 OUTPUTS = 1
0.5

0 0
4 6 8 10 12 14 16 18 –60 –40 –20 0 20 40 60 80 100 120
VSUPPLY (V) TJUNCTION (°C)

6
High-State Output Resistance Low-State Output Resistance
35 35

30 30

25 TJ = +150°C 25

7
R DS(ON) (Ω )

R DS(ON) (Ω )

20 20
TJ = +150°C
TJ = +25°C
15 15

10 10
T = +25°C
J
5 5

0 0
4 6 8 10 12 14 16 18 4 6 8 10 12 14 16 18
V SUPPLY (V) V SUPPLY (V)
8
TELCOM SEMICONDUCTOR, INC. 4-267
 LOGIC-INPUT CMOS
QUAD DRIVERS
TC4467
TC4468
TC4469

SUPPLY CURRENT CHARACTERISTICS (Load on Single Output Only)

Supply Current vs. Capacitive Load Supply Current vs. Frequency

60 60
VDD = 18V VDD = 18V
2 MHz 2200 pF
50 1 MHz 50
1000 pF

I SUPPLY (mA)
I SUPPLY (mA)

40 40

30 30
500 kHz
20 20
100 pF
10 200 kHz 10

20 kHz
0 0
100 1000 10,000 10 100 1000 10,000
CLOAD (pF) FREQUENCY (kHz)

Supply Current vs. Capacitive Load Supply Current vs. Frequency

60 60
VDD = 12V 2 MHz VDD = 12V 2200 pF
50 50
I SUPPLY (mA)

I SUPPLY (mA)

40 40
1 MHz 1000 pF
30 30

20 20
500 kHz

10 100 pF
200 kHz 10
20 kHz
0 0
100 1000 10,000 10 100 1000 10,000
C LOAD (pF) FREQUENCY (kHz)

Supply Current vs. Capacitive Load Supply Current vs. Frequency

60 60
VDD = 6V VDD = 6V
50 50
I SUPPLY (mA)
I SUPPLY (mA)

40 40
2200 pF
30 2 MHz 30

20 20
1 MHz 1000 pF
10 500 kHz 10
200 kHz 100 pF
20 kHz
0 0
100 1000 10,000 10 100 1000 10,000
CLOAD (pF) FREQUENCY (kHz)

4-268 TELCOM SEMICONDUCTOR, INC.

LOGIC-INPUT CMOS
QUAD DRIVERS
TC4467
1
TC4468
TC4469

TYPICAL APPLICATIONS

Stepper Motor Drive

+12V
Quad Driver for H-Bridge Motor Control
+5V TO +15V
2
14
14
AIRPAX 18V
TC4469 #M82102-P2 TC4469
1 1
13 RED 7.5°/STEP
2 13
2
DIRECTION

A
3
4
12
GRAY
MOTOR
FWD
REV
3
4

5
12
3
PWM SPEED 11
6 M MOTOR
5
B 11 YEL 8
6 10
9

8
10 BLK 7

4
9

48-Volt, 3-Phase Brushless Output Stage

48V

R4 R2 R3

5
C1 14
1 µF 3.3 3.3 3.3
kΩ kΩ kΩ VDD
D1 1
1A
1N4744 2 13
15V 1B 1Y
3 2A
R1 12
3.3 4 2B 2Y
kΩ 5 U1
5W 3A
6 3B 11
3Y
8 4A
9 4B 10
4Y

R5
D2
D3 D4 TC4469
GND
7
6
MOTOR MOTOR MOTOR
R9 (FLOAT AT 33V) PHASE A PHASE C
Q1 PHASE B
A+ 15V
4.7 kΩ R6
2N5550 14
R10 R7 VDD
B+ Q2 1
1A 13
4.7 kΩ 2N5550 2
1B 1Y

C+
R11

4.7 kΩ 2N5550
Q3
3
4
5
2A
2B
3A
U2
2Y
12
7
6 11
3B 3Y
A– 8
4A 10
9 4Y
4B
TC4469
B–
GND
7
C–
8
TELCOM SEMICONDUCTOR, INC. 4-269