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High-side driver
Features
VN750
VN750S
SO-8 PENTAWATT
( s )
ct
60 mΩ 6A 36 V
VN750PT
VN750-B5
d u
■ CMOS compatible input
r o
■ On-state open-load detection P2PAK
e P PPAK
■ Off-state open-load detection
l e t
■
■
Shorted load protection
s o
Description
■
Undervoltage and overvoltage shutdown
Protection against loss of ground
O b
The VN750 is a monolithic device designed using
STMicroelectronic® VIPower® M0-3 technology.
■ Very low standby current
) - The VN750 is intended for driving any type of load
with one side connected to ground. The active
(s
■ Reverse battery protection
b s disconnected.
PENTAWATT VN750 —
SO-8 VN750S VN750S13TR
P2PAK VN750-B5 VN750-B513TR
PPAK VN750PT VN750PT13TR
Contents
2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2.4
)
Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
( s
ct
2.5 GND protection network against reverse battery . . . . . . . . . . . . . . . . . . . 19
2.5.1
u
Solution 1: resistor in the ground line (RGND only) . . . . . . . . . . . . . . . . 19
d
2.5.2
o
Solution 2: diode (DGND) in the ground line . . . . . . . . . . . . . . . . . . . . . 20
r
2.6
P
Load dump protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
e
2.7
t
MCU I/Os protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
l e
2.8
o
Open-load detection in Off-state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
s
2.9
2.10 PPAK/P2PAK
O b
SO-8 maximum demagnetization energy (VCC = 13.5V) . . . . . . . . . . . . . 22
maximum demagnetization energy (VCC = 13.5V) . . . . . . 23
) -
3
(s
Package and PCB thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
c t
3.1
u
SO-8 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
d
P2PAK thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
3.2
r o
3.3
4
l e t
Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
( s )
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o d
P r
e t e
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- O
(s )
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List of tables
Table 14.
d
Electrical transient requirements on VCC pin (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
o
Table 15.
Table 16.
P r
Electrical transient requirements on VCC pin (part 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Thermal parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Table 17.
Table 18.
t e
Thermal parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Thermal parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
e
Table 19.
l
SO-8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
o
Table 20.
Table 21.
b s
PENTAWATT mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
P2PAK mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Table 22.
Table 23.
- O
PPAK mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
(s )
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O b
List of figures
s o
Figure 34. P2PAK thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . . . . . . . . . 27
O b
Figure 35.
Figure 36.
Figure 37.
Thermal fitting model of a single channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
PPAK PC board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Rthj-amb vs PCB copper area in open box free air condition . . . . . . . . . . . . . . . . . . . . . . . 29
Figure 38. PPAK thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Figure 39. Thermal fitting model of a single channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Figure 40. SO-8 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Figure 41. PENTAWATT package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Figure 42. P2PAK package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Figure 43. PPAK package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Figure 44. SO-8 tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Figure 45. SO-8 tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Figure 46. PENTAWATT tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Figure 47. P2PAK tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Figure 48. P2PAK tape and reel (suffix “13TR”). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
( s )
u ct
o d
P r
e t e
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b s
- O
(s )
c t
d u
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l e t
s o
O b
VCC
VCC OVERVOLTAGE
CLAMP DETECTION
UNDERVOLTAGE
DETECTION
GND
Power CLAMP
( s )
DRIVER
ct
du
INPUT
OUTPUT
LOGIC
CURRENT LIMITER
r o
STATUS ON STATE OPENLOAD
e
DETECTION P
e t
ol
OVERTEMPERATURE
DETECTION OFF STATE OPENLOAD
AND OUTPUT SHORTED TO VCC
b s DETECTION
- O
(s )
Figure 2.
t
Configuration diagram (top view)
c
u
od
5 OUTPUT 5 OUTPUT
VCC 5 4 N.C.
Pr
4 STATUS 4 STATUS
OUTPUT STATUS 3 VCC 3 VCC
OUTPUT INPUT 2 INPUT 2 INPUT
1 GND
e
VCC 8 1 GND 1 GND
s o
Ob
Table 2. Suggested connections for unused and not connected pins
Connection / pin Status N.C. Output Input
Floating X X X X
To ground X Through 10KΩ resistor
2 Electrical specifications
IS
VF
IIN
VCC
INPUT
ISTAT IOUT
STATUS OUTPUT VCC
GND
( s )
ct
VIN
VSTAT VOUT
IGND
d u
r o
e P
2.1 Absolute maximum ratings
l e t
s o
Stressing the device above the rating listed in the Table 3 may cause permanent damage to
O b
the device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the operating sections of this specification is not implied.
-
Exposure to Absolute maximum rating conditions for extended periods may affect device
)
(s
reliability.
Table 3.
c t
Absolute maximum ratings
u
od
Value
Pr
Symbol Parameter Unit
SO-8 PENTAWATT P2PAK PPAK
ete
VCC DC supply voltage 41 V
ol
-VCC Reverse DC supply voltage -0.3 V
b s -Ignd
IOUT
DC reverse ground pin current
DC output current
-200
Internally limited
mA
A
O -IOUT
IIN
Reverse DC output current
DC input current
-6
+/- 10
A
mA
ISTAT DC Status current +/- 10 mA
Electrostatic discharge
(human body model: R = 1.5 KΩ;
C = 100 pF)
VESD – INPUT 4000 V
– STATUS 4000 V
– OUTPUT 5000 V
– VCC 5000 V
u ct °C
Tc Case operating temperature -40 to 150
o d °C
Pr
Tstg Storage temperature -55 to 150 °C
)-
Symbol Parameter Unit
S0-8 PENTAWATT P2PAK PPAK
t ( s
Rthj-case Thermal resistance junction-case - 2.1 2.1 2.1 °C/W
c
du
Rthj-lead Thermal resistance junction-lead 30 - - - °C/W
93(1) 62.1 52.1(2) 77.1(2) °C/W
Rthj-amb
r o
Thermal resistance junction-ambient
82(3) 62.1 37(4) 44(4) °C/W
e P
1. When mounted on a standard single-sided FR-4 board with 0.5 cm2 of Cu (at least 35 µm thick) connected
e tto all VCC pins. Horizontal mounting and no artificial air flow.
ol
2. When mounted on a standard single-sided FR-4 board with 0.5 cm2 of Cu (at least 35 µm thick). Horizontal
mounting and no artificial air flow.
bs
3. When mounted on a standard single-sided FR-4 board with 2 cm2 of Cu (at least 35 µm thick) connected to
all VCC pins. Horizontal mounting and no artificial air flow.
O 4. When mounted on a standard single-sided FR-4 board with 6 cm2 of Cu (at least 35 µm thick). Horizontal
mounting and no artificial air flow.
Table 5. Power
Symbol Parameter Test conditions Min. Typ. Max. Unit
( s ) V
Off-state; VCC = 13 V;
e P
IS Supply current
t
VIN = VOUT = 0 V; Tj = 25°C
l e
10 20 µA
so
On-state; VCC = 13 V; VIN = 5 V;
2 3.5 mA
IOUT = 0 A
IL(off1) Off-state output current
O b
VIN = VOUT = 0 V 0 50 µA
)-
IL(off2) Off-state output current VIN = 0 V; VOUT = 3.5 V -75 0 µA
t(s
VIN = VOUT = 0 V; VCC = 13 V;
IL(off3) Off-state output current 5 µA
Tj = 125°C
IL(off4)
u c
Off-state output current
VIN = VOUT = 0 V; VCC = 13 V;
3 µA
o d Tj = 25°C
Table 6.
P rSwitching (VCC = 13 V)
ete
Symbol Parameter Test conditions Min. Typ. Max. Unit
ol
RL = 6.5 Ω from VIN rising edge to
td(on) Turn-on delay time 40 µs
VOUT = 1.3V
( s ) V
ct
Table 9. Status pin
du
Symbol Parameter Test conditions Min. Typ. Max. Unit
ro
VSTAT Status low output voltage ISTAT = 1.6 mA 0.5 V
ILSTAT Status leakage current
P
Normal operation; VSTAT = 5 V
e
10 µA
let
CSTAT Status pin input capacitance Normal operation; VSTAT = 5 V 100 pF
ISTAT = 1 mA 6 6.8 8 V
VSCL Status clamp voltage
s o
ISTAT = -1 mA -0.7 V
TTSD
t (
Shutdown temperatures 150 175 200 °C
TR
u c
Reset temperature 135 °C
Thyst
o d
Thermal hysteresis 7 15 °C
P r
tSDL
Status delay in overload
condition
Tj > Tjsh 20 ms
e
let
9 V < VCC < 36 V 6 9 15 A
Ilim Current limitation
5 V< VCC < 36 V 15 A
Ob Vdemag
voltage L = 6 mH
VCC - 41 VCC - 48 VCC - 55
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
V
diagnostic signals must be used together with a proper software strategy. If the device operates under
abnormal conditions this software must limit the duration and number of activation cycles.
Open-load ON-state
IOL VIN = 5 V 50 200 mA
detection threshold
Open-load ON-state
tDOL(on) IOUT = 0 A 200 µs
detection delay
Open-load OFF-state
VOL VIN = 0 V 1.5 3.5 V
voltage detection threshold
Open-load detection delay
tDOL(off) 1000 µs
at turn-off
OPEN LOAD STATUS TIMING (with external pull-up) OVERTEMP STATUS TIMING
VOUT > VOL IOUT< IOL
VIN
VIN
Tj > Tjsh
( s )
u ct
VSTAT
VSTAT
o d
P r
tDOL(off) tDOL(on)
e t e tSDL tSDL
o l
Figure 5. Switching time waveforms
b s
VOUT
- O
(s ) 80%
90%
c t
d u dVOUT/dt(on) dVOUT/dt(off)
r o 10%
e P t
let
VIN
td(on) td(off)
s o
Ob t
L L H
Normal operation
H H H
L L H
Current limitation H X (Tj < TTSD) H
H X (Tj > TTSD) L
L L H
Overtemperature
H L L
L L X
Undervoltage
H L X
( s )
ct
L L H
Overvoltage
H
L
L
H
d u H
L
Output voltage > VOL
H H
r o H
e P H
H
l e t
H L
s o
O b
) -
c t (s
d u
r o
e P
l e t
s o
O b
1 - 25 V - 50 V - 75 V - 100 V 2 ms 10 Ω
2 + 25 V + 50 V + 75 V + 100 V 0.2 ms 10 Ω
3a - 25 V - 50 V - 100 V - 150 V 0.1 µs 50 Ω
3b + 25 V + 50 V + 75 V + 100 V 0.1 µs 50 Ω
4 -4V -5V -6V -7V 100 ms, 0.01 Ω
5 + 26.5 V + 46.5 V + 66.5 V + 86.5 V
( s )
400 ms, 2 Ω
u ct
ISO T/R 7637/1 Test levels results
o d
Pr
test pulse I II III IV
1
2
C
C
C
C
e t e C
C
C
C
3a C
s
C
ol C C
3b
4
C
C
O b C
C
C
C
C
C
5 C
) - E E E
c t (s
Table 15.
u
Electrical transient requirements on VCC pin (part 3)
od
Class Contents
P r
C All functions of the device are performed as designed after exposure to disturbance.
e te E
One or more functions of the device is not performed as designed after exposure to
disturbance and cannot be returned to proper operation without replacing the device.
o l
b s
O
Figure 6. Waveforms
NORMAL OPERATION
INPUT
LOAD VOLTAGE
STATUS
UNDERVOLTAGE
VCC VUSDhyst
VUSD
INPUT
( s )
ct
LOAD VOLTAGE
STATUS undefined
d u
OVERVOLTAGE r o
VCC<VOV VCC > VOV
e P
VCC
l e t
INPUT
LOAD VOLTAGE
s o
STATUS
O b
) -
OPEN LOAD with external pull-up
INPUT
c t (s VOUT > VOL
LOAD VOLTAGE
d u VOL
STATUS
r o
e P OPEN LOAD without external pull-up
l e t INPUT
s o LOAD VOLTAGE
O b STATUS
OVERTEMPERATURE
Tj TTSD
TR
INPUT
LOAD CURRENT
STATUS
2.5 6
Off state
Vin=3.25V
2 Vcc=36V
5
Vin=Vout=0V
1.5
4
1
3
0.5
0
2
( s )
ct
-0.5 1
-1
-50 -25 0 25 50 75 100 125 150 175
0
-50 -25 0 25 50
d u
75 100 125 150 175
o
Tc (ºC) Tc (ºC)
e t e
Vicl (V)
8
o l
Ilstat (uA)
0.05
7.8
7.6
Iin=1mA
b s 0.04
7.4
7.2
- O 0.03
Vstat=5V
(s )
6.8
6.6
c t 0.02
6.4
d u 0.01
o
6.2
P
6
-50 -25 r 0 25 50
Tc (°C)
75 100 125 150 175
0
-50 -25 0 25 50
Tc (°C)
75 100 125 150 175
e te
o l Figure 11. Status low output voltage Figure 12. Status clamp voltage
O 0.6
0.5
7.8
7.6
8
Istat=1mA
Istat=1.6mA
7.4
0.4
7.2
0.3 7
6.8
0.2
6.6
6.4
0.1
6.2
0 6
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Tc (ºC) Tc (°C)
Figure 13. On-state resistance vs Tcase Figure 14. On-state resistance vs VCC
110
120 Iout=2A
Iout=2A 100
Vcc=8V; 13V; 36V Tc= 150°C
100 90
80
80
Tc= 125°C
70
60
60
40 50
Tc= 25°C
40
20
30
Tc= - 40°C
( s )
ct
0 20
-50 -25 0 25 50 75 100 125 150 175 5 10 15 20 25 30 35 40
u
Tc (ºC) Vcc (V)
o d
Figure 15. Open-load On-state detection Figure 16. Input high level
threshold
P r
e t e
l
Iol (mA) Vih (V)
o
220 3.6
bs
200
3.4
Vcc=13V
180
Vin=5V
3.2
O
160
-
140 3
)
120
2.8
100
80
t ( s 2.6
60
40
u c 2.4
20
o d 2.2
Pr
0 2
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Tc (ºC) Tc (ºC)
e t e
ol
Figure 17. Input low level Figure 18. Input hysteresis voltage
O
2.8 1.5
2.6 1.4
1.3
2.4
1.2
2.2
1.1
2
1
1.8
0.9
1.6
0.8
1.4
0.7
1.2 0.6
1 0.5
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Tc (ºC) Tc (ºC)
48
4.5
46 Vin=0V
4
44
3.5
42
40 3
38
2.5
36
)
2
34
1.5
( s
ct
32
30 1
u
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
d
Tc (°C) Tc (ºC)
l
500
o
bs
900 450
Vcc=13V Vcc=13V
800 400
Rl=6.5Ohm Rl=6.5Ohm
O
700 350
600
500
) - 300
250
400
t ( s 200
c
300 150
du
200 100
100 50
ro
0 0
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
e P Tc (ºC) Tc (ºC)
l e t
Figure 23. Ilim vs Tcase
s o
O b Ilim (A)
20
18
Vcc=13V
16
14
12
10
0
-50 -25 0 25 50 75 100 125 150 175
Tc (ºC)
+5V +5V
Rprot VCC
STATUS
Dld
μC Rprot INPUT
OUTPUT
GND
( s )
VGND
RGND
u ct
d
DGND
r o
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l e t
2.5 GND protection network against s oreverse battery
O b
2.5.1
-
Solution 1: resistor in the ground line (RGND only)
)
( s
This can be used with any type of load.
t
u c
The following is an indication on how to size the RGND resistor.
RGND ≤ 600 mV / (IS(on)max).
1.
o d
RGND ≥ (-VCC) / (-IGND)
2.
P r
where -IGND is the DC reverse ground pin current and can be found in the absolute
t e
maximum rating section of the device datasheet.
e
ol
Power dissipation in RGND (when VCC < 0: during reverse battery situations) is:
bs
PD = (-VCC)2/ RGND
O This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where IS(on)max becomes the sum of the
maximum on-state currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground then the
RGND produces a shift (IS(on)max * RGND) in the input thresholds and the status output
values. This shift varies depending on how many devices are ON in case of several high
side drivers sharing the same RGND.
If the calculated power dissipation leads to a large resistor or several devices have to share
the same resistor then ST suggests to utilize Solution 2 (see below).
( s )
2.6 Load dump protection
u ct
o d
Dld is necessary (voltage transient suppressor) if the load dump peak voltage exceeds the
P r
VCC max DC rating. The same applies if the device is subject to transients on the VCC line
that are greater than the ones shown in the ISO 7637-2: 2004(E) table.
e t e
2.7 MCU I/Os protection o l
b s
If a ground protection network is used and negative transient are present on the VCC line,
- O
the control pins are pulled negative. ST suggests to insert a resistor (Rprot) in line to prevent
the microcontroller I/O pins from latching-up.
(s )
The value of these resistors is a compromise between the leakage current of microcontroller
c t
and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of
microcontroller I/Os.
d u
o
-VCCpeak/Ilatchup ≤ Rprot ≤ (VOHµC-VIH-VGND) / IIHmax
r
P
Calculation example:
e
l e t
For VCCpeak= - 100V and Ilatchup ≥ 20mA; VOHµC ≥ 4.5V
5kΩ ≤ Rprot ≤ 65kΩ.
o
bs
Recommended values: Rprot =10kΩ .
Because Is(OFF) may significantly increase if Vout is pulled high (up to several mA), the pull-
up resistor RPU should be connected to a supply that is switched OFF when the module is in
standby.
The values of VOLmin, VOLmax and IL(off2) are available in the electrical characteristics
section.
6##
20 5
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VIN, IL
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Demagnetization Demagnetization Demagnetization
s o
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1. Values are generated with RL = 0 Ω.In case of repetitive pulses, Tjstart (at the beginning of each
demagnetization) of every pulse must not exceed the temperature specified above for curves A and B.
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A: Tjstart = 150°C single pulse
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B: Tjstart = 100°C repetitive pulse
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C: Tjstart = 125°C repetitive pulse
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1. Values are generated with RL = 0 Ω.In case of repetitive pulses, Tjstart (at the beginning of each
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1. Layout condition of Rth and Zth measurements (PCB FR4 area = 58 mm x 58 mm,PCB thickness = 2 mm,
Cu thickness = 35 μm , Copper areas: 0.14 cm2, 0.8 cm2, 2 cm2).
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Figure 29. Rthj-amb vs PCB copper area in open box free air condition
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