CHEN WANG, MITTAL

2
 
V out  A0 
H 2 ( s) = = − 
V GS1  s 
 + 1

 ω1 

V out ( s) H ( s)
=
V in ( s ) 1 + H ( s)

Barkhausen Criteria:

H (ω o ) = ≥ 1
Figure 3 Cube of H1(s) for H3(s)
180 
∠ H (ω o ) =
LC-Oscillators
Ring Oscillators: -

Cross-Coupled Oscillator
Figure 1 Single Pole circuit with
CS-Stage
V out
H 1 ( s) = = −gm ZL
V GS
−g m RD A0
= = −
RDCLs + 1 s
+1
ω1
A0 = −g m RD
1
ω1 =
RDCL

So, the circuit oscillates if open

loop gain is greater that
( g m1 R p ) ( g m 2 R p ) ≥ 1

VCO
Ideal relationship can be given
Figure 2Two Pole circuit with CS-
Stage by:
ω out
= ω o + K V CO V cont

EEL 6357.001, ANALOG CMOS/VLSI DESIGN, FALL 2018

 CHEN WANG, MITTAL

Mathematical model of VCO: - Minimum output swing: Vin, cm - Vt

Imp: -
Maximum output swing: Vdd
dφ
ω = φ (t) = ∫ ω (τ ) d τ
dt 1
∆I D,max
= β ∆V in,max K − ∆V in. max 2
2
V m cos ( ω o t + K VCO ∫ V cont dt + φ o )
V out =
=φ ext K VCO ∫ V cont dt + φ o
=V out V m cos ( ω o t + φ ext )
φ ext
H VCO =
V cont

g m ∆R D
A CM − DM = − ,
1 + 2 g m R ss
DIFFERENTIAL AMPLIFIERS
A DM
Solution to clipping, use a tail CMMR =
current source Is. A CM − DM
= V DD − R D ( I ss / 2)
V CM ,output R D g m1 + g m 2 + 4 g m1 g m1 R ss
A DM =
2 1 + ( g m1 + g m 2 ) R ss
≅ gm RD
g m1 + g m 2 + 4 g m1 g m1 R ss
CMMR =
2∆ g m
gm
≅ ( 1 + 2 g m R ss )
∆gm
Small signal analysis of Diff Amps, two
methods: -
2 I D1 2 I D2 1) Superposition Principle
V in1 − V in 2= −
β1 β2 2) Half Circuit Approach.
ε ox
2 I ss Cox = per unit area
V GS − V t = tox
β
ε ox = ε ox ,rel ε 0

( ) ( )
4 I ss
I D1 − I=
1
β V in1 − V in 2 − V in1 − V in 2 2 =
Vtn ' Vtn ,ideal + VFB
D2
2 β
1 Surface potential
∆I =
D β ∆V in K − ∆V in 2
2 kT  Na 
φs ,critical ≈ 2 φF =
2 Ln  
2 I ss
q  ni 
∆V in,max =Headroom Max.
β

EEL 6357.001, ANALOG CMOS/VLSI DESIGN, FALL 2018

 CHEN WANG, MITTAL

Vtn= 2 φF +
1
2qε si N a (2 φF )= 2qε si N sub
,ideal
Cox γ = N sub N a , p − sub
Cox
For p-substrate
Vtn= Vtn 0 + γ ( 2Φ F + VSB − 2Φ F )
1
VFB = (Φ G − Φ S ) − (Q f − Qox )
Cox ' W W
=β k= ( ) µ Cox ( ) µ A/V 2
kT NaNd , poly L L
= −( ) Ln( ) For n-poly
q ni 2 k ' = µ Cox µ A/V 2
or
kT Na, poly
=( ) Ln( ) For p-poly
q Na

=
CG (WL' )=
Cox W ( L + 2 LD )Cox

C j0 kT NaND
Cj = m
Φ B = Ln( )
 VR  q ni 2
1 + Φ 
 B 

Deep linear (VDSn  VGSn − Vtn ) ≡ (VGDn  Vtn )

1 2 1 1
1 =1 CGS (= to )CG CGD ( to )CG
I Dn ≈ β n (VGSn − Vtn )VDSn Ron  = 2 3 2 3
β n (VGSn − Vtn ) g m
C = Cbot + Csw = C j (WE ) + C jsw [2(W + E )]

VTH Adjustment through Ion-implantation

qDI
Vtn=' Vtn ,ideal + VFB ±
Cox
+ for p + implant - for n + implant
DI is the implantation dose in ions/cm 2

=g m β n (VGSn − Vt ) in SAT or
= β nVDSn in LIN

β
I D =(VGS − Vt ) 2 (1 + λVDS )
ID =
2

EEL 6357.001, ANALOG CMOS/VLSI DESIGN, FALL 2018

 CHEN WANG, MITTAL

Diode-connected NMOS load

g m1 g m1
A≈− =−
g m 2 + g mb 2 g m 2 (1 + η )
(W / L)1 1
= −
(W / L)2 (1 + η )

Diode-connected PMOS load

g µn (W / L)n
A ≈ − m1 = −
gm2 µ p (W / L) p Figure 5 Diode Connected PMOS load

Current Source Load input at NMOS g m1 µ n (W / L) n

A=
− =
1 g m2 µ p (W / L) p
Vin,CM = Vt1 + (VDD − Vb − Vt 2 ) b = β1 / β 2
b

For deep linear region (VGS >> Vt)

Figure 4 Source Follower 1 1
=
R on =
1 1 g m β ( V in − V t )
=
ROUT =
g m + g mb g m ' g m β ( V GS − V t )
= ∂Vt
η 
= 2β ID ∂ V SB
γ
2ID =
Source Follower Gain 2 2 φ F + V SB
=
g m RS g m RS g ( V GS − V t )
=A = ≈ m <1
1 + g m (1 + η ) RS 1 + g R' '
m S gm
Intrinsic Gain: - I1 introduces inf impedance,
Common Gate Gain
the gain is limited by ro:- A 0 = − g m r 0
Vin 1
g m (1 + η ) RD Zin =
Av = =
Ix g ' m

Cascode Stage with Current Source Load

A = − g m1 ROUT
= − g m1 ( g m 2' ro 2 ro1 )
Unit Conversion

= =
1 mm 1000 µ m 10
= 6 nm 10 15 fm

CS stage with Current Source Load, high

gain.

EEL 6357.001, ANALOG CMOS/VLSI DESIGN, FALL 2018