STN4NF03L

N-channel 30 V - 0.039 Ω - 6.5 A - SOT-223

STripFET™ II Power MOSFET

Features
Type VDSS RDS(on) ID
STN4NF03L 30 V <0.05 Ω 6.5 A 2

■ Low threshold drive 3

2
1
Application SOT-223
■ Switching applications

Description
This Power MOSFET is the latest development of
STMicroelectronics unique “single feature size”
strip-based process. The resulting transistor
shows extremely high packing density for low on- Figure 1. Internal schematic diagram
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.

Table 1. Device summary

Order code Marking Package Packaging

STN4NF03L 4NF03L SOT-223 Tape & reel

December 2007 Rev 6 1/12

www.st.com 12
Contents STN4NF03L

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6

3 Test circuit ................................................ 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

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STN4NF03L Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VDS Drain-source voltage (VGS = 0) 30 V

VGS Gate-source voltage ± 16 V
ID Drain current (continuous) at TC = 25 °C 6.5 A
ID Drain current (continuous) at TC=100 °C 4.5 A
(1)
IDM Drain current (pulsed) 26 A
PTOT Total dissipation at TC = 25 °C 3.3 W
Derating factor 0.026 W/°C
EAS (2) Single pulse avalanche energy 100 mJ
TJ Operating junction temperature
-55 to 150 °C
Tstg Storage temperature
1. Pulse width limited by safe operating area
2. Starting TJ = 25 °C, ID = 6 A

Table 3. Thermal data

Symbol Parameter Value Unit

Rthj-pcb Thermal resistance junction-PCB(1) max 38 °C/W

Rthj-pcb Thermal resistance junction-PCB(2) max 100 °C/W
Maximum lead temperature for soldering
Tl 260 °C
purpose (for 10 sec. 1.6 mm from case) typ
1. When mounted on 1 inch2 FR-4 board, 2 oz. Cu., t < 10 s
2. Minimum recommended footprint

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Electrical characteristics STN4NF03L

2 Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

Drain-source breakdown
V(BR)DSS ID = 250 µA, VGS= 0 30 V
voltage

Zero gate voltage drain VDS = max rating, 1 µA

IDSS
current (VGS = 0) VDS = max rating @125 °C 10 µA

Gate body leakage current

IGSS VGS = ±16 V ± 100 nA
(VDS = 0)

VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 1 V

Static drain-source on VGS = 10 V, ID = 2 A 0.039 0.05 Ω

RDS(on)
resistance VGS = 5 V, ID= 2 A 0.046 0.06 Ω

Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit

gfs (1) Forward transconductance VDS = 10 V, ID = 1 A 3 6 S

Input capacitance
Ciss 330 pF
Output capacitance
Coss VDS = 25 V, f=1 MHz, VGS = 0 90 pF
Reverse transfer
Crss 40 pF
capacitance
Qg Total gate charge VDD= 24 V, ID = 4 A 6.5 9 nC
Qgs Gate-source charge VGS =10 V 3.2 nC
Qgd Gate-drain charge (see Figure 14) 2 nC
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

VDD = 15 V, ID= 2 A,
td(on) Turn-on delay time 11 ns
RG = 4.7 Ω, VGS = 4.5 V
tr rise time 100 ns
(see Figure 15)
VDD = 15 V, ID = 2 A,
td(off) Turn-off-delay time 35 ns
RG = 4.7 Ω, VGS = 4.5 V
tf fall time 22 ns
(see Figure 15)

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STN4NF03L Electrical characteristics

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max Unit

ISD Source-drain current 6.5 A

(1)
ISDM Source-drain current (pulsed) 26 A

VSD(2) Forward on voltage ISD = 6.5 A, VGS = 0 1.5 V

ISD = 6.5 A,
trr Reverse recovery time 34 ns
di/dt = 100 A/µs,
Qrr Reverse recovery charge 25 nC
VDD = 15 V, Tj=150 °C
IRRM Reverse recovery current 1.4 A
(see Figure 15)
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration=300µs, duty cycle 1.5%

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Electrical characteristics STN4NF03L

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance junction-PCB

Figure 4. Output characteristics Figure 5. Transfer characteristics

Figure 6. Transconductance Figure 7. Static drain-source on resistance

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STN4NF03L Electrical characteristics

Figure 8. Gate charge vs. gate-source voltage Figure 9. Capacitance variations

Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs.
vs. temperature temperature

Figure 12. Source-drain diode forward

characteristics

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Test circuit STN4NF03L

3 Test circuit

Figure 13. Switching times test circuit for Figure 14. Gate charge test circuit
resistive load

Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test
switching and diode recovery times circuit

Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

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STN4NF03L Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK®

packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com

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Package mechanical data STN4NF03L

SOT-223 MECHANICAL DATA

mm mils
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.

a 2.27 2.3 2.33 89.4 90.6 91.7

b 4.57 4.6 4.63 179.9 181.1 182.3

c 0.2 0.4 0.6 7.9 15.7 23.6

d 0.63 0.65 0.67 24.8 25.6 26.4

e1 1.5 1.6 1.7 59.1 63 66.9

e4 0.32 12.6

f 2.9 3 3.1 114.2 118.1 122.1

g 0.67 0.7 0.73 26.4 27.6 28.7

l1 6.7 7 7.3 263.8 275.6 287.4

l2 3.5 3.5 3.7 137.8 137.8 145.7

L 6.3 6.5 6.7 248 255.9 263.8

L l2
e1

a d
c e4
b

C
l1

B C E

g
P008B

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STN4NF03L Revision history

5 Revision history

Table 8. Document revision history

Date Revision Changes

– Initial electronic version.

21-Jun-2004 3 – Document status promoted from preliminary data to
datasheet
09-Oct-2006 4 Document reformatted no content change
27-Nov-2007 5 Updated marking on Table 1: Device summary
11-Dec-2007 6 Updated EAS value on Table 2: Absolute maximum ratings

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 STN4NF03L

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