2N4401

General Purpose
Transistors
NPN Silicon

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• Pb−Free Packages are Available*

COLLECTOR
3

MAXIMUM RATINGS
2
Rating Symbol Value Unit BASE
Collector − Emitter Voltage VCEO 40 Vdc
Collector − Base Voltage VCBO 60 Vdc 1
EMITTER
Emitter − Base Voltage VEBO 6.0 Vdc
Collector Current − Continuous IC 600 mAdc
Total Device Dissipation PD
@ TA = 25°C 625 mW
Derate above 25°C 5.0 mW/°C TO−92
Total Device Dissipation PD CASE 29
@ TC = 25°C 1.5 W STYLE 1
Derate above 25°C 12 mW/°C
12 1
Operating and Storage Junction TJ, Tstg −55 to °C 2
Temperature Range +150 3 3
STRAIGHT LEAD BENT LEAD
THERMAL CHARACTERISTICS BULK PACK TAPE & REEL
AMMO PACK
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W
Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability. 2N
4401
AYWW G
G

2N4401 = Device Code

A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2010 1 Publication Order Number:

February, 2010 − Rev. 4 2N4401/D
 2N4401

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 − Vdc
Collector−Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO 60 − Vdc
Emitter−Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO 6.0 − Vdc
Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) IBEV − 0.1 mAdc
Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) ICEX − 0.1 mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain hFE −
(IC = 0.1 mAdc, VCE = 1.0 Vdc) 20 −
(IC = 1.0 mAdc, VCE = 1.0 Vdc) 40 −
(IC = 10 mAdc, VCE = 1.0 Vdc) 80 −
(IC = 150 mAdc, VCE = 1.0 Vdc) 100 300
(IC = 500 mAdc, VCE = 2.0 Vdc) 40 −

Collector−Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) VCE(sat) − 0.4 Vdc
(IC = 500 mAdc, IB = 50 mAdc) − 0.75

Base−Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) VBE(sat) 0.75 0.95 Vdc
(IC = 500 mAdc, IB = 50 mAdc) − 1.2

SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) fT 250 − MHz
Collector−Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Ccb − 6.5 pF
Emitter−Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb − 30 pF
Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie 1.0 15 kW
Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre 0.1 8.0 X 10−4
Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 40 500 −
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 1.0 30 mmhos
SWITCHING CHARACTERISTICS
Delay Time (VCC = 30 Vdc, VBE = 2.0 Vdc, td − 15 ns
Rise Time IC = 150 mAdc, IB1 = 15 mAdc) tr − 20 ns
Storage Time (VCC = 30 Vdc, IC = 150 mAdc, ts − 225 ns
Fall Time IB1 = IB2 = 15 mAdc) tf − 30 ns
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

ORDERING INFORMATION
Device Package Shipping†
2N4401 TO−92 5000 Units / Bulk
2N4401G TO−92 5000 Units / Bulk
(Pb−Free)

2N4401RLRA TO−92 2000 / Tape & Reel

2N4401RLRAG TO−92 2000 / Tape & Reel
(Pb−Free)

2N4401RLRMG TO−92 2000 / Tape & Ammo Box

(Pb−Free)

2N4401RLRP TO−92 2000 / Tape & Ammo Box

2N4401RLRPG TO−92 2000 / Tape & Ammo Box
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

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 2N4401

SWITCHING TIME EQUIVALENT TEST CIRCUITS

+30 V +30 V
1.0 to 100 ms, 1.0 to 100 ms, 200 W
200 W +16 V
+16 V DUTY CYCLE ≈ 2.0% DUTY CYCLE ≈ 2.0%

0 0
1.0 kW -14 V 1.0 kW CS* < 10 pF
-2.0 V CS* < 10 pF
< 2.0 ns < 20 ns

Scope rise time < 4.0 ns -4.0 V

*Total shunt capacitance of test jig connectors, and oscilloscope

Figure 1. Turn−On Time Figure 2. Turn−Off Time

TRANSIENT CHARACTERISTICS
25°C 100°C

30 10
7.0
VCC = 30 V
20 5.0
IC/IB = 10
Cobo 3.0
CAPACITANCE (pF)

QT
Q, CHARGE (nC)

2.0
10
1.0
7.0
0.7
5.0 0.5

Ccb 0.3
3.0 0.2 QA

2.0 0.1
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 10 20 30 50 70 100 200 300 500
REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 3. Capacitances Figure 4. Charge Data

100 100
70 IC/IB = 10 70 VCC = 30 V
tr IC/IB = 10
50 50
tr @ VCC = 30 V
30 30 tf
t, TIME (ns)

t, TIME (ns)

tr @ VCC = 10 V
td @ VEB = 2.0 V
20 td @ VEB = 0 20

10 10

7.0 7.0

5.0 5.0
10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 5. Turn−On Time Figure 6. Rise and Fall Times

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 2N4401

300 100
ts′ = ts - 1/8 tf VCC = 30 V
70
IB1 = IB2 IB1 = IB2
200
IC/IB = 10 to 20 50 IC/IB = 20
t s′, STORAGE TIME (ns)

t f , FALL TIME (ns)

30
100
20 IC/IB = 10
70

50 10

7.0
30 5.0
10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 7. Storage Time Figure 8. Fall Time

SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = 10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz
10 10
IC = 1.0 mA, RS = 150 W f = 1.0 kHz
IC = 500 mA, RS = 200 W RS = OPTIMUM
8.0 8.0
IC = 100 mA, RS = 2.0 kW RS = SOURCE IC = 50 mA
NF, NOISE FIGURE (dB)

NF, NOISE FIGURE (dB)

IC = 50 mA, RS = 4.0 kW RS = RESISTANCE IC = 100 mA

6.0 6.0 IC = 500 mA
IC = 1.0 mA

4.0 4.0

2.0 2.0

0 0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k
f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (OHMS)
Figure 9. Frequency Effects Figure 10. Source Resistance Effects

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 2N4401

h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C

This group of graphs illustrates the relationship between selected from the 2N4401 lines, and the same units were
hfe and other “h” parameters for this series of transistors. To used to develop the correspondingly numbered curves on
obtain these curves, a high−gain and a low−gain unit were each graph.

300 50k
2N4401 UNIT 1
200 2N4401 UNIT 2

hie , INPUT IMPEDANCE (OHMS)

20k
hfe , CURRENT GAIN

10k
100
5.0k
70
2N4401 UNIT 1
50
2N4401 UNIT 2 2.0k

30 1.0k

20 500
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 11. Current Gain Figure 12. Input Impedance

10 100
h re , VOLTAGE FEEDBACK RATIO (X 10-4 )

7.0
hoe , OUTPUT ADMITTANCE (m mhos)

5.0 50
2N4401 UNIT 1
3.0 2N4401 UNIT 2
20
2.0
10
1.0
0.7 5.0
2N4401 UNIT 1
0.5 2N4401 UNIT 2
2.0
0.3

0.2 1.0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 13. Voltage Feedback Ratio Figure 14. Output Admittance

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 2N4401

STATIC CHARACTERISTICS

3.0
VCE = 1.0 V
2.0 VCE = 10 V
h FE , NORMALIZED CURRENT GAIN

TJ = 125°C

1.0
25°C
0.7

0.5 -55°C

0.3

0.2
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA)

Figure 15. DC Current Gain

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

1.0

TJ = 25°C
0.8

0.6
IC = 1.0 mA 10 mA 100 mA 500 mA

0.4

0.2

0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
IB, BASE CURRENT (mA)

Figure 16. Collector Saturation Region

1.0 +0.5
TJ = 25°C
VBE(sat) @ IC/IB = 10 0
0.8 qVC for VCE(sat)
COEFFICIENT (mV/ °C)
VOLTAGE (VOLTS)

-0.5
0.6 VBE @ VCE = 10 V
-1.0
0.4
-1.5

0.2 VCE(sat) @ IC/IB = 10 -2.0 qVB for VBE

0 -2.5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 17. “On” Voltages Figure 18. Temperature Coefficients

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 2N4401

PACKAGE DIMENSIONS

TO−92 (TO−226)
CASE 29−11
ISSUE AM

A B STRAIGHT LEAD
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
BULK PACK Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
R 3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
P BEYOND DIMENSION K MINIMUM.
L
SEATING INCHES MILLIMETERS
PLANE K DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
X X D G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
G J 0.015 0.020 0.39 0.50
H J K 0.500 --- 12.70 ---
L 0.250 --- 6.35 ---
V C N 0.080 0.105 2.04 2.66
P --- 0.100 --- 2.54
SECTION X−X R 0.115 --- 2.93 ---
1 N V 0.135 --- 3.43 ---

A B BENT LEAD
NOTES:
R 1. DIMENSIONING AND TOLERANCING PER
TAPE & REEL ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION:
AMMO PACK MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
P 4. LEAD DIMENSION IS UNCONTROLLED IN
T P AND BEYOND DIMENSION K MINIMUM.
SEATING
PLANE K MILLIMETERS
DIM MIN MAX
A 4.45 5.20
B 4.32 5.33
C 3.18 4.19

X X D D 0.40 0.54
G 2.40 2.80
G J 0.39 0.50
J K 12.70 ---
N 2.04 2.66
V
C P 1.50 4.00
R 2.93 ---
SECTION X−X V 3.43 ---
1 N STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any
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