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PHASE CONTROL THYRISTOR H85TBXX

TJ
Symbol Characteristics Conditions Value Unit
(0C)

BLOCKING PARAMETERS
VRRM Repetitive peak reverse voltage 125 200-1600 V
Repetitive peak off-stage
VDRM 125 200-1600 V
voltage
IRRM Repetitive peak reverse current V = VRRM 125 30 mA
IDRM Repetitive peak off-state current V = VRRM 125 30 mA
CONDUCTING PARAMETERS
180 sine, 50H Z,
IF(AV) Average on-state current 85 A
TC = 850C
IRMS RMS on-state current 135 A
ITSM Surge on-state current Sine wave, 1650 A
10mS without 125
I2 t I2 t reverse voltage 13.60 kA2S
On-state
VT Peak on-state voltage drop 125 1.75 V
current = 265A
V0 Threshold voltage 125 1.20 V
R0 On-state slope resistance 125 2.60 mΩ

TRIGGERING PARAMETERS

IGT Gate trigger current VD = 5V 25 150 mA


VGT Gate trigger voltage 25 2.00 V
IL Latching Current VD = 5V 25 600 mA
Pulse width
PG –PEAK Maximum Peak Gate Power 100 W
100μSec
di/dt Repetitive rate of rise of current 120 A/μSec
VFGM Maximum forward gate voltage 12 V
IFGM Maximum forward gate current 20 A

THERMAL & MECHANICAL PARAMETERS

Thermal impedance, 180


R TH (J-C) Junction to case 0.27 0
C/W
conduction, Sine
Case to
RTH (C-HK) Thermal impedance 0.08 0
C/W
heatsink
Maximum Permissible junction
TJ 125 0
C
temperature
TSTG Storage temperature range -40 - 125 C 0

F Mounting Torque 14 NM
W Weight 120 gms

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PHASE CONTROL THYRISTOR H85TBXX

All dimensions in mm

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PHASE CONTROL THYRISTOR H85TBXX

On State Power Loss

240
220 DC
200
180
160 1800
120
Pt(av) - W

140
120 600
100
80
60
40
20
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140
It (av)

Maximum Permissible Case Temp

140

120

100
Tcase (0C)

80

60

40
600 1200 1800 DC
20

0
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140
It(av) A

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PHASE CONTROL THYRISTOR H85TBXX

Max non repetitive Surge Current

2000
1800
1600
1400
1200
Itsm (A)

1000
800
600
400
200
0
0.01 0.1 1 10
Tim e in Sec

Transient Thermal Impedance Junction to Case

0.3

0.25

0.2
Rth(j-c)

0.15

0.1

0.05

0
0.001 0.01 0.1 1 10
Tim e in Sec

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PHASE CONTROL THYRISTOR H85TBXX

On State Characteristics

400

350

300

250
I t(av) A

200

150

100

50

0
0 0.5 1 1.5 2 2.5 3

Vt (V)

Gate Trigger Characteristics

100

10
VGT
VG(V)

1 250C
PO(tp)
IGT 100 W
(0.1ms)
IGD
0.1
0.001 0.01 0.1 1 10 100
IG (av)

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PHASE CONTROL THYRISTOR H85TBXX

Ordering Information: -

H 85 TB XX
Hirect make Thyristor IF(AV) = 85A TB – with a Pigtail VRRM = XX * 100
e.g.12 * 100 =1200V

Hind Rectifiers Ltd reserves the right to change the specifications without
notice.

This datasheet specifies technical information for semiconductor devices but


promises no characteristics. No warranty or guarantee expressed or implied
is made regarding delivery, performance or suitability.

Hind Rectifiers Ltd


Lake Road
Bhandup (West)
Mumbai – 400 078
Tel: - +91 22 2596 8027/28/29/31
Fax: - +91 22 2596 4114
E-mail: - marketing@hirect.com
Website: - www.hirect.com

June-2008

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