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6RI75E-080 Power Diode Module Datasheet

This document provides specifications for a 600V/800V 75A power diode module. The key details are: - It is a glass passivated chip with 6 diodes in one package for easy connection in insulated applications like inverters, battery chargers, DC motors and power supplies. - The module has a maximum repetitive reverse voltage of 600V/800V, non-repetitive reverse voltage of 660V/880V, and can handle an average output current of 75A at a case temperature of 101°C. - Forward voltage drop is a minimum of 1.15V at 25°C with a forward current of 75A. Reverse current is a maximum of 10mA

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452 views2 pages

6RI75E-080 Power Diode Module Datasheet

This document provides specifications for a 600V/800V 75A power diode module. The key details are: - It is a glass passivated chip with 6 diodes in one package for easy connection in insulated applications like inverters, battery chargers, DC motors and power supplies. - The module has a maximum repetitive reverse voltage of 600V/800V, non-repetitive reverse voltage of 660V/880V, and can handle an average output current of 75A at a case temperature of 101°C. - Forward voltage drop is a minimum of 1.15V at 25°C with a forward current of 75A. Reverse current is a maximum of 10mA

Uploaded by

coronaqc
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

6RI75E(75A) POWER DIODE MODULE

Outline Drawings, mm
600V,800V / 75A
6 in one-package
Features
· Glass Passivation Chip
· Easy Connection
· Insulated Type

Applications
· Inverters
· Battery Chargers
· DC Motors
· General Purpose DC Power Supplies
Inner Curcuit Schematic
~ ~ ~

Maximum ratings and characteristics


Absolute maximum ratings
+ -
Item Symbol Rating Unit
Conditions
-060 -080
Repetitive peak reverse voltage VRRM 600 800 V
Non-repetitive peak reverse voltage VRSM 660 880 V
Average output current IO 50/60Hz Sine wave, Tc=101°C 75 A
Surge current IFSM From rated load, Sine wave 10ms 1000 A
2
It 2
It From rated load 4000 A2s
Operating junction temperature Tj -40 to +150 °C
Storage temperature Tstg -40 to +125 °C
Isolation voltage Vis AC2000(1min.) V
Screw torque 3.5 *1 N·m
*1: Recommendable value : 2.5 to 3.0 N·m(M5)
Electrical characteristics (Ta=25°C Unless otherwise specified )

Item Symbol Conditions Min. Typ. Max. Unit

Forward voltage drop VFM Tj=25°C, IFM=75A 1.15 V

Reverse current IRRM Tj=150°C, VR=VRRM 10.0 mA

Thermal Characteristics

Item Symbol Conditions Min. Typ. Max. Unit

Thermal resistance Rth(j-c) Junction to case 0.30 °C/W

Rth(c-f) the base to cooling fin * 0.06 °C/W


* : With Thermal Compound
6RI75E(75A) POWER DIODE MODULE

Characteristics

Forward Characteristics Forward Average Current vs. Power Loss

Type. 160
70
Max.
140
60

120
50
Forward current : IF [A]

100

Power Loss : Po [W]


40
80

30
60

20
40

10 20

0 0
0.6 0.7 0.8 0.9 1.0 1.0 1.2 1.3 0 10 20 30 40 50 60 70 80

Forward voltage : VF [V] Forward Average Current : IF [V]

Forward Average Current vs. Case Temperature Surge Current

130
1000

120 900
Surge current
(from rated load)
110 800

700
Case Temperature : TC [°C]

Surge Current : IFSM [A]

100
600
90
500

80 400

300
70
200
60
100

50 0
0 10 20 30 40 50 60 70 80 0.03 0.05 0.1 0.3 0.5 1.0

Forward Average Current : IF [V] time : t [sec.]

Transient Thermal Impedance


0.5

0.4
Thermal resistance : Zth(j-c) [°C/W]

0.3

0.2

0.1

0
10-2 10-1 100 101 102
time : t [sec.]

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