N-MOS Transistors Review

N-MOS I-O Characteristic

N-MOS Large Signal Model
Saturation

Saturation:

Triode:
 P-MOS

Saturation

Saturation: Triode:
CMOS Digital Logic Inverter Review
Sedra & Smith (5th edition, section 4.10)

Matched transistors.
QN driver and QP load.
 vI =VDD
QN in triode region.
QP in cutoff region.

vO =0
i=0
PD =0

rDSN very small.

Large current to
load.
 vI =0V
QN in cutoff region.
QP in triode region.

vO = VDD
i=0
PD =0

rDSP very small.

Large current to
load.
 Basic Results

• Voltage swing maximum possible (0 & VDD).

• Static power dissipation is zero.
• Low output resistance path.
• High output current.
• Input resistance ∞ (IG=0).

Excellent noise margins and fan-out with very low power.

 CMOS Inverter Matching
Matching is very important.

For QN in triode region:

Similarly for QP in triode region:

For matching: and

Fixing L
CMOS Inverter VTC
 VIH and VIL
In segment CD:

Differentiating and setting and

we get substituting into currents equality

similarly
Dynamic Analysis (Propagation Delays)
 High to Low Delay (tPHL) -1
vI switches from 0 to VDD.
QP switches off (vGS=0).

Segment EF: QN in saturation.

I constant.
 High to Low Delay (tPHL) -2
Segment FM: QN in triode.

Integrating from
to

For Vt=0.2VDD
 Propagation Delay

similarly

For matched transistors:

 Equivalent Capacitance

Miller Effect
 Dynamic Power Dissipation
From A to D on VTC curve.
Adding load capacitance (C)…

For every cycle QN and QP

will each dissipate:

If switching is at f Hz:

Delay-power product: