ABSTRACT:

The main objective is to appraisal mounting technology “Diamond Chip” also recognized as
Carbon Chip. Electronics without silicon is implausible, but it will come true with the evolution
of Diamond or Carbon chip. Manufacturing using Electronic Chips has numerous drawbacks
when it is used in electronic applications, due to bulk in size, slow operating speed etc.
Industrialists plan to build a diamond chip that can resist in temperatures of 500 C, associated to
only about 150 C for silicon chips. Keywords: Carbon Nanotubes (CNT), Single Walled
Nanotubes (SNWT), Multi Walled Nanotubes.

I. INTRODUCTION: Currently we are using silicon for the manufacturing of

Electronic Chip’s. It has many drawbacks when it is used in power electronic
applications, such as majority in size, slow working alacrity etc. Carbon, Silicon and
Germanium are belonging to the similar cluster in the episodic table. A crystalline
diamond film that could fabricate more resilient semiconductor chips than those made
from silicon, generally synthetic diamonds have proved a poor semi conduct material
Diamond can also stand firm voltages up to around 200 volts, compare to around 20
volts for a silicon chip. . II. CARBON NANOTUBES (CNT) Downfall the Graphene
sheet into a tube like structure produces CARBON NANOTUBES. It is a Nano size
cylinder of carbon atoms. They are through of one or a number of concentric walls in
which carbon atoms are prearranged in hexagonal pattern, having a less than one
nanometer diameter [2].

Figure 1: Carbon Nanotubes (CNT)

III. PRODUCTION METHODS OF CARBON NANOTUBE There are various

production methods. Three main methods are:

A. ARC DUSCHARGE METHOD The arc-plasma disappearance of untainted graphite

rods led to the innovation of CNT by Iijima. The arc device used was the alike as that for the
invention of ultrafine SiC particles by a gas evaporation process. CNTs were obtained in the
cathode deposit prepared by a dc arc discharge method in rarefied His gas. This arc evaporation
of carbon electrodes produced a set down on the cathode, which incorporated multiwall carbon
nanotubes (MWNTs) [1].
B. PULSED LASER EVAPORATION By means of the Matrix-Assisted Pulsed Laser
Evaporation (MAPLE) development urbanized at the Naval Research Laboratory, carbon
nanotubes and carbon nanotube amalgamated thin films have been successfully fabricated.
MAPLE is

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conducted in a predictable vacuum chamber operational with a window of high transmittance for
the wavelength of the pulsed laser to be used. Authentication proceeds by illuminating the target
with laser pulses. To make the MAPLE target, 1.1 gm. of polymer, either polystyrene (PS) or
polyethylene glycol (PEG), is mixed with 25 gm. of solution [3]. Because the ratio of SWN to
chloroform cannot be determined, the exact ratio of SWN/polymer in the target is not known.

C. SILICON CARBIDE VAPORISATION Associated CNT’s are fashioned on the

surface of silicon carbide (SiC) wafers during high hotness anneals. The exposed 4H SiC surface
transforms into CNT’s for temperatures in the range of 1400-1700°C and beneath moderate
vacuum conditions. The carbon source is believed to be outstanding carbon from the SiC left on
the surface after preferential disappearance of Si. CNT development is believed to be catalyzed
by low concentrations of residual oxygen in the chamber [2].Patterning of both n-type and semi-
insulating substrates with Si3N4 masks, former to annealing, results in CNT-free regions.
Vertically make parallel carbon nanotubes are much loved for applications in vacuum
microelectronics as countryside emission diplomacy. A catalyst-free CNT augmentation means
dubbed “surface decomposition” results from heating silicon carbide (SiC) wafers in a vacuum
furnace.

IV. TYPES OF CARBON NANOTUBES (CNT) There are two types of carbon
nanotubes:

A. SINGLE WALLED NANOTUBES (SNWT) Single Walled Nanotube is a

nanotube, which has merely one graphite layer. It is tacit that one graphite layer is in use and it is
fold in a cylindrical silhouette to formulate a CNT. SNWT is semiconductor, which exhibit band
gap energy of 0.3 eV. Current transmission takes place from side to side the walls. As the
diameter augment the band gap energy decreases and it show evidence of metallic properties [5].

Figure 2: Single Walled Nanotubes (SNWT)

B. MULTI WALLED NANOTUBES (MWNT) Multi walled carbon nanotube is a

nanotube which has manifold layer state line. It is unspecified that a deposit of graphite layers is
in use and which is folded cylindrical shape to make the MWNT. Multi walled carbon nanotubes
are mostly clanging in nature. The energy band gap is in the order of zero [4].The diameter of
multi walled carbon nanotube is superiorto that of single walled carbon nanotube. It is not
second-hand for the manufacturing of semiconductor devices like CNT transistor since it will not
give a ‘cut off’ on the application of the gate voltage.

Figure 3: Multi Walled Nanotubes (MWNT)

V. PROPERTIES OF CARBON NANOTUBE

A. STRENGTH Carbon nanotubes are the toughest and stiffest materials yet exposed in
conditions of tensile strength and elastic modulusin that order. This strong point results from the
covalent sp² bonds fashioned flanked by the individual carbon atoms. A multiwalled carbon
nanotube was veteran to have a tensile strength of 63 Gpa.

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Figure 4: Strength

B. HARDNESS Customary single walled carbon nanotubes can endure heaviness up to

24GPa without buckle. They then experience a transformation to super hard segment nanotubes.
Maximum pressures measured using current untried techniques are around 55GPa [1]. The bulk
modulus of super hard stage nanotubes is 462 to 546 GPa, even senior than that of diamond (420
GPa for single diamond crystal).

Figure 5: Hardness

C. ELECTRICAL High electrical conductivity (10-6 ohm), and for well crystallized
nanotubes ballistic transport is observed. Being covalently bonded, as electrical conductors they
do not suffer from electro migration or atomic diffusion and thus can carry high current densities
(107 -109 A/cm2), which is 1000 times that of copper. In cooperation metal and semiconductor
can be formed [3].

Figure 6: Electrical

D. THERMAL All nanotubes are expected to be very good thermal conductors along the
tube, exhibiting a property known as "ballistic conduction", but good insulators laterally to the
tube axis. Measurements show that a SWNT has a room-temperature thermal conductivity along
its axis of about 3500 W·m−1·K−1; compare this to copper, a metal well-known for its good
thermal conductivity, which transmits 385 W·m−1·K−1.

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Figure 7: Thermal
VI. ADVANTAGES OF CARBON NANOTUBES (CNT)
A. AVERAGE DIAMETER The Japanese Scientist finished the minimum CNT, the
diameter of that carbon nanotube is just 0.4nm.The run of the mill diameter of the carbon
nanotube is 1.2 nm to 1.4nm.The diameter vary according to the industrialized process. E-beam
lithography can produce lines of 50 nm wide.

B. GOOD THERMAL The thermal conductivity of the carbon nanotube is 6000 w/m/k so
the heat debauchery in the circuitry is quickly passed to the high temperature sink or other
cooling instrument. On assessment pure diamond will broadcast heat at the rate of 3320 w/m/k.

C. HIGH TENSILE STRENGTH Carbon nanotube has a tensile strength of 45 billion

Pascal. Where as a high strength steel alloy break at about 2 billion Pascal .So NASA is planning
to use carbon nanotube for spacecraft component manufacturing.

D. HIGH DENSITY Carbon nanotube has very elevated density of 1.33 to 1.40 grams per
Cm Square. So NASA is planning to use CNT alloys in the nozzles of future space shuttles.

E. TWISTING ANGLE Carbon nanotube has an important property called twisting angle
dependence. Run of the mill MWNT show evidence of clanging character. But it is conditional
on its falsification angle. The band gap of the carbon nanotube increases with its twisting angle
.So this method can be used to convert metallic carbon nanotubes in to semi conducting CNT.
Atomic force microscope is used to make twist in the carbon nanotube .It is operated in contact
mode to make these twist [5].

F. HIGH MOBILITY Mobility of the electrons inside the doped diamond structural carbon
is higher than that of in the silicon structure. As the size of the silicon is higher than that of
carbon, the chance of collision of electrons, with larger silicon atoms increases as compared to
carbon chip.
VII. HOW NANOTUBES ARE USEFUL IN DIGITAL LOGIC?
Their straightforward inverter machine consists of a nanotube FET and a large bias
confrontation. It converts a elevated input voltage to a low one - that is, "one" to "zero" - and
vice versa. By adding up an extra FET in parallel, the researchers made a NOR gate [4]. This
device needs two "zero" inputs to give a "one" output, or two "ones" to give a "zero”. Any of the
typical logic gates - AND, OR, NAND and so on - can be shaped using dissimilar arrangements
of these FETs.

A. ADVANTAGES OF DIAMOND CHIP

1. SMALLER COMPONENTS ARE POSSIBLE As the dimension of the carbon

atom is little compared with that of silicon atom, it is probable to etch very lesser lines through
diamond structural carbon. We can become conscious a transistor whose size is one in hundredth
of silicon transistor.

2. IT WORKS AT HIGHER TEMPERATURE Diamond is very powerfully bonded

textile. It can endure advanced temperatures compared with that of silicon. At exceptionally high
temperature, crystal structure of the silicon will go down. But diamond chip can occupation well
in

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these eminent high temperatures. Diamond is very good conductor of heat. So if there is any heat
indulgence inside the chip, heat will very quickly transport to the heat sink or other cooling
technicalities.

3. FASTER THAN SILICON CHIP Carbon chip works previous than silicon chip. The
mobility of the electrons within the doped diamond structural carbon is higher than that of in the
silicon organization. As the size of the silicon is highly developed than that of carbon, the chance
of impact of electrons with larger silicon atoms increases [2]. Except the carbon atom size is
small, so the opening of impact decreases. So the mobility of the charge carriers is elevated in
doped diamond structural carbon compare with that of silicon.

4. LARGER POWER HANDLING CAPACITY It has many drawbacks such as bulk

in size, slow operating speed, smaller amount efficiency, lower band gap etc. At very high
voltages silicon structure will collapse. It is unspecified that a carbon transistor will distribute
one watt of power at speed of 100 GHZ. Now days in all power electronic circuits, we are by
means of certain circuits like relays, or MOSFET inter connection circuits (inverter circuits) for
the purpose of interconnecting a low power control circuit with a high power circuit [3].If we are
using carbon chip this inter stage is not desirable. We can connect high power circuit direct to the
diamond chip.

VIII. CONCLUTION Carbon is more appreciated than Silicon. By means of carbon as the
manufacturing material, we can accomplish smaller, faster and stronger chips. Therefore
diamond chip substitutes the need of silicon in every aspect in future generation and we can get
fast, small electronic devices.

ACKNOWLEDGMENT We would like to thank our honorable Principal, Dr. R. P. Singh,

our Head of Department, Prof. D. D. Patil , & our special thanks to our guide, Prof. R. P.
Chaudhari and & sincere thanks to all the respected teaching faculties of department of computer
science & engineering. Our special thanks to all the writers of reference paper that are referred
by us.

REFERENCES [1] http://www.infoworld.com/t/platforms/study-carbon-nanotubes-make-

best semiconductors-487. [2] Diamond Science and Technology, volume 1 Aleksandra
Mikhailovich Prokhorov Technology and Engineering (2002). [3] Jorg D (2002). Hoheisel
technology And Engineering. [4] C.-F. Chen, C.-L. Lin, and C.-M. Wang, “Field emission from
aligned carbon nanofibers grown in situ by hot filament chemical vapor deposition,” Appl. Phys.
Lett. 82, 2515 (2003). [5] M. Kusunoki, J. Shibata, M. Rokkaku, and T. Hirayama, “Aligned
Carbon Nanotube Film Self-Organized on a SiC