New Product

Si4174DY
Vishay Siliconix

N-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY FEATURES

• Halogen-free According to IEC 61249-2-21
VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.)
• TrenchFET® Power MOSFET
0.0095 at VGS = 10 V 17 • 100 % Rg and UIS Tested
30 8 nC
0.013 at VGS = 4.5 V 14.5
APPLICATIONS
• Notebook CPU Core
- High-Side Switch

SO-8
D

S 1 8 D

S 2 7 D

S 3 6 D
G
G 4 5 D

Top View
S

Ordering Information: Si4174DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS ± 20
TC = 25 °C 17
TC = 70 °C 13.5
Continuous Drain Current (TJ = 150 °C) ID
TA = 25 °C 12b, c
TA = 70 °C 9.6b, c A
Pulsed Drain Current IDM 50
TC = 25 °C 4.5
Continuous Source-Drain Diode Current IS
TA = 25 °C 2.2b, c
Single Pulse Avalanche Current IAS 20
L = 0.1 mH
Avalanche Energy EAS 20 mJ
TC = 25 °C 5
TC = 70 °C 3.2
Maximum Power Dissipation PD W
TA = 25 °C 2.5b, c
TA = 70 °C 1.6b, c
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 38 50
°C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 20 25
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.

Document Number: 68998 www.vishay.com

S-82773-Rev. A, 17-Nov-08 1
 New Product
Si4174DY
Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 30 V
VDS Temperature Coefficient ΔVDS/TJ 34
ID = 250 µA mV/°C
VGS(th) Temperature Coefficient ΔVGS(th)/TJ - 4.7
Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 1.0 2.2 V
Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
VDS = 30 V, VGS = 0 V 1
Zero Gate Voltage Drain Current IDSS µA
VDS = 30 V, VGS = 0 V, TJ = 55 °C 10
On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 30 A
VGS = 10 V, ID = 10 A 0.0078 0.0095
Drain-Source On-State Resistancea RDS(on) Ω
VGS = 4.5 V, ID = 7 A 0.0108 0.0130
Forward Transconductancea gfs VDS = 15 V, ID = 10 A 30 S
Dynamicb
Input Capacitance Ciss 985
Output Capacitance Coss VDS = 15 V, VGS = 0 V, f = 1 MHz 205 pF
Reverse Transfer Capacitance Crss 76
VDS = 15 V, VGS = 10 V, ID = 10 A 18 27
Total Gate Charge Qg
8 12
nC
Gate-Source Charge Qgs VDS = 15 V, VGS = 4.5 V, ID = 10 A 2.4
Gate-Drain Charge Qgd 2.3
Gate Resistance Rg f = 1 MHz 0.3 1.3 2.6 Ω
Turn-On Delay Time td(on) 14 25
Rise Time tr VDD = 15 V, RL = 1.5 Ω 12 24
Turn-Off Delay Time td(off) ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 19 35
Fall Time tf 9 18
ns
Turn-On Delay Time td(on) 8 16
Rise Time tr VDD = 15 V, RL = 1.5 Ω 10 20
Turn-Off Delay Time td(off) ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 16 30
Fall Time tf 9 18
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current IS TC = 25 °C 4.5
A
Pulse Diode Forward Currenta ISM 50
Body Diode Voltage VSD IS = 3 A 0.76 1.1 V
Body Diode Reverse Recovery Time trr 14 28 ns
Body Diode Reverse Recovery Charge Qrr 5 10 nC
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Fall Time ta 8
ns
Reverse Recovery Rise Time tb 6
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

www.vishay.com Document Number: 68998

2 S-82773-Rev. A, 17-Nov-08
 New Product
Si4174DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50 8.0

VGS = 10 thru 4 V
40 6.4
I D - Drain Current (A)

I D - Drain Current (A)

30 4.8
VGS = 3 V

20 3.2 TC = 25 °C

TC = 125 °C
10 1.6

TC = - 55 °C
0 0.0
0.0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

0.015 1300

Ciss
0.013 1040
R DS(on) - On-Resistance (Ω)

VGS = 4.5 V
C - Capacitance (pF)

0.011 780

0.009 VGS = 10 V 520 Coss

0.007 260
Crss

0.005 0
0 10 20 30 40 50 0 2.4 4.8 7.2 9.6 12

ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current and Gate Voltage Capacitance

10 1.8

ID = 10 A ID = 10 A
1.6
VGS - Gate-to-Source Voltage (V)

8
R DS(on) - On-Resistance

VGS = 10 V
VDS = 20 V 1.4
(Normalized)

VDS = 10 V 1.2
VGS = 4.5 V
4 VDS = 15 V
1.0

2
0.8

0 0.6
0.0 3.7 7.4 11.1 14.8 18.5 - 50 - 25 0 25 50 75 100 125 150

Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)

Gate Charge On-Resistance vs. Junction Temperature

Document Number: 68998 www.vishay.com

S-82773-Rev. A, 17-Nov-08 3
 New Product
Si4174DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.05

ID = 10 A

10 0.04
TJ = 150 °C

R DS(on) - On-Resistance (Ω)

I S - Source Current (A)

TJ = 25 °C
1 0.03

0.1 0.02
TJ = 125 °C

0.01 0.01

TJ = 25 °C
0.001 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6 7 8 9 10

VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

0.4 80

0.2
64
VGS(th) Variance (V)

0
48
Power (W)

- 0.2 ID = 5 mA

32
- 0.4

ID = 250 µA
- 0.6 16

- 0.8 0
- 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10
TJ - Temperature (°C) Time (s)
Threshold Voltage Single Pulse Power, Junction-to-Ambient

100
Limited by RDS(on)*

10
I D - Drain Current (A)

1 ms

1 10 ms

100 ms

1s
0.1 10 s
TA = 25 °C
Single Pulse DC
BVDSS Limited

0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient

www.vishay.com Document Number: 68998

4 S-82773-Rev. A, 17-Nov-08
 New Product
Si4174DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

20

16

I D - Drain Current (A)

12

0
0 25 50 75 100 125 150

TC - Case Temperature (°C)

Current Derating*

6.0 2.0

4.8 1.6

3.6 1.2
Power (W)
Power (W)

2.4 0.8

1.2 0.4

0.0 0.0
0 25 50 75 100 125 150 0 25 50 75 100 125 150

TC - Case Temperature (°C) TA - Ambient Temperature (°C)

Power, Junction-to-Ambient Power Derating, Junction-to-Foot

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.

Document Number: 68998 www.vishay.com

S-82773-Rev. A, 17-Nov-08 5
 New Product
Si4174DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1

Duty Cycle = 0.5

Normalized Effective Transient
Thermal Impedance

0.2

0.1 Notes:
0.1
PDM
0.05
t1
t2
0.02 t1
1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 85 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4 10 -3 10 -2 10 -1 1 10 100 1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2

0.1
0.1

0.05

0.02

Single Pulse
0.01
10 -4 10 -3 10 -2 10 -1 1 10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68998.

www.vishay.com Document Number: 68998

6 S-82773-Rev. A, 17-Nov-08
 Package Information
Vishay Siliconix

SOIC (NARROW): 8-LEAD

JEDEC Part Number: MS-012

8 7 6 5

E H

1 2 3 4

D h x 45
C
0.25 mm (Gage Plane)
A
All Leads

q 0.101 mm
e B A1 L
0.004"

MILLIMETERS INCHES
DIM Min Max Min Max
A 1.35 1.75 0.053 0.069
A1 0.10 0.20 0.004 0.008
B 0.35 0.51 0.014 0.020
C 0.19 0.25 0.0075 0.010
D 4.80 5.00 0.189 0.196
E 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.50 0.93 0.020 0.037
q 0° 8° 0° 8°
S 0.44 0.64 0.018 0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498

Document Number: 71192 www.vishay.com

11-Sep-06 1
 Application Note 826
Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR SO-8

0.172
(4.369)
0.028
(0.711)
(6.248)

(3.861)
0.246

0.152
(1.194)
0.047

0.022 0.050
(0.559) (1.270)

Recommended Minimum Pads

Dimensions in Inches/(mm)

Return to Index
Return to Index
APPLICATION NOTE

www.vishay.com Document Number: 72606

22 Revision: 21-Jan-08
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Revision: 08-Feb-17 1 Document Number: 91000

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