2SK3799

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV)

2SK3799
Switching Regulator Applications
Unit: mm

Low drain-source ON resistance : RDS (ON) = 1.0 Ω (typ.)

High forward transfer admittance : |Yfs| = 6.0 S (typ.)
Low leakage current : IDSS = 100μA (max) (VDS = 720 V)
Enhancement model : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Maximum Ratings (Ta = 25°C)

Characteristic Symbol Rating Unit

Drain-source voltage VDSS 900 V

Drain-gate voltage (RGS = 20 kΩ) VDGR 900 V
Gate-source voltage VGSS ±30 V
DC (Note 1) ID 8 A
Drain current
Pulse (Note 1) IDP 24 A
1. Gate
Drain power dissipation PD 50 W 2. Drain
3. Source
Single pulse avalanche energy
EAS 1080 mJ
(Note 2)
Avalanche current IAR 8 A JEDEC —
Repetitive avalanche energy (Note 3) EAR 5 mJ JEITA SC-67
Channel temperature Tch 150 °C TOSHIBA 2-10U1B
Storage temperature range Tstg −55~150 °C
Weight: 1.7 g (typ.)

Thermal Characteristics 2

Characteristic Symbol Max Unit

Thermal resistance, channel to case Rth (ch−c) 2.5 °C / W

Thermal resistance, channel to 1
Rth (ch−a) 62.5 °C / W
ambient

Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 30.9 mH, RG = 25Ω, IAR = 8 A
3
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.

This transistor is an electrostatic-sensitive device. Handle with care.

1 2005-01-24
 2SK3799
Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = ±30 V, VDS = 0 V — — ±10 µA

Drain-source breakdown voltage V (BR) GSS IG = ±10 µA, VGS = 0 V ±30 — — V
Drain cut-off current IDSS VDS = 720 V, VGS = 0 V — — 100 µA
Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 450 — — V
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 — 4.0 V
Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 4 A — 1.0 1.3 Ω
Forward transfer admittance |Yfs| VDS = 15 V, ID = 4 A 3.5 6.0 — S
Input capacitance Ciss — 2200 —
Reverse transfer capacitance Crss VDS = 25 V, VGS = 0 V, f = 1 MHz — 45 — pF

Output capacitance Coss — 190 —

Rise time tr — 25 —
10 V ID = 4 A
Output
VGS

RL = 100Ω
0V
Turn-on time ton — 65 —

4.7Ω
Switching time ns

Fall time tf — 20 —
VDD ≈ 400 V

Turn-off time toff — 120 —

Duty ≤ 1%, tw = 10 µs
Total gate charge (Gate-source
Qg — 60 —
plus gate-drain)
VDD ≈ 400 V, VGS = 10 V, ID = 8 A nC
Gate-source charge Qgs — 34 —
Gate-drain (“miller”) charge Qgd — 26 —

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current

IDR — — — 8 A
(Note 1)
Pulse drain reverse current
IDRP — — — 24 A
(Note 1)
Forward voltage (diode) VDSF IDR = 8 A, VGS = 0 V — — −1.7 V
Reverse recovery time trr IDR = 8 A, VGS = 0 V — 1700 — ns
Reverse recovery charge Qrr dlDR / dt = 100 A / µS — 23 — µC

Marking

K3799 Part No. (or abbreviation code)

Lot No.

A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.

2 2005-01-24
 2SK3799

ID – VDS ID – VDS
10 20
COMMON SOURCE COMMON SOURCE
Tc = 25°C Tc = 25°C
PULSE TEST 15 PULSE TEST
8 10 16
(A)

(A)
6 15
5.5 10
DRAIN CURRENT ID

DRAIN CURRENT ID
6 5.25 12 6

5 5.5
4 8

4.75
5
2 4
VGS = 4.5 V
VGS = 4.5 V

0 0
0 2 4 6 8 10 0 4 8 12 16 20

DRAIN−SOURCE VOLTAGE VDS (V) DRAIN−SOURCE VOLTAGE VDS (V)

ID – VGS VDS – VGS

20 20
COMMON SOURCE COMMON SOURCE
(V)

VDS = 20 V Tc = 25°C
PULSE TEST PULSE TEST
VDS

16 16
(A)
DRAIN CURRENT ID

DRAIN−SOURCE VOLTAGE

12 25 12

ID = 8 A
8 8
100 Tc = −55°C

4
4 4
2

0 0
0 2 4 6 8 10 0 4 8 12 16 20

GATE−SOURCE VOLTAGE VGS (V) GATE−SOURCE VOLTAGE VGS (V)

RDS (ON) − ID
⎪Yfs⎪ − ID 10
100 COMMON SOURCE
COMMON SOURCE
FORWARD TRANSFER ADMITTANCE

DRAIN−SOURCE ON RESISTANCE

VDS = 20 V Tc = 25°C
PULSE TEST PULSE TEST
RDS (ON) (Ω)

VGS = 10 V
⎪Yfs⎪ (S)

1
10

Tc = −55°C 100

25

1 0.1
0.1 1 10 100 1 10 100

DRAIN CURRENT ID (A) DRAIN CURRENT ID (A)

3 2005-01-24
 2SK3799

RDS (ON) − Tc IDR − VDS

5 100
COMMON SOURCE COMMON SOURCE

DRAIN REVERSE CURRENT IDR (A)

VGS = 10 V Tc = 25°C
DRAIN−SOURCE ON RESISTANCE

PULSE TEST
PULSE TEST
4

10
RDS (ON) (Ω)

ID = 8 A

2
4 2
1
10

1 1
5

3 VGS = 0 V

0 0.1
−80 −40 0 40 80 120 160 0 −0.4 −0.8 −1.2 −1.6

CASE TEMPERATURE Tc (°C) DRAIN−SOURCE VOLTAGE VDS (V)

C − VDS Vth − Tc
10000 5
(V)

Ciss
Vth

4
C (pF)

1000
GATE THRESHOLD VOLTAGE

3
Coss
CAPACITANCE

100

Crss 2

10
COMMON SOURCE
1
VGS = 0 V COMMON SOURCE
f = 1 MHz VDS = 10 V
Tc = 25°C ID = 1 mA
PULSE TEST
1 0
0.1 1 10 100 −80 −40 0 40 80 120 160

DRAIN−SOURCE VOLTAGE VDS (V) CASE TEMPERATURE Tc (°C)

DYNAMIC INPUT/OUTPUT
PD – Tc CHARACTERISTICS
80 500 20
COMMON SOURCE
(W)

(V)

ID = 8 A
(V)

Tc = 25°C
VDS
PULSE TEST
VGS
VDS
PD

400 16
60
DRAIN POWER DISSIPATION

GATE−SOURCE VOLTAGE
DRAIN−SOURCE VOLTAGE

300 100 12

40
200 VDS = 400 V
200 8
VGS
20
100 4

0 0 0
0 40 80 120 160 0 20 40 60 80 100

CASE TEMPERATURE Tc (°C) TOTAL GATE CHARGE Qg (nC)

4 2005-01-24
 2SK3799

rth – tw
10

NORMALIZED TRANSIENT THERMAL

IMPEDANCE rth (t)/Rth (ch-c)
1
Duty=0.5

0.2
0.1
0.1
0.05
0.02 PDM

t
0.01 0.01
SINGLE PULSE T

Duty = t/T
Rth (ch-c) = 2.5°C/W
0.001
10μ 100μ 1ｍ 10ｍ 100ｍ 1 10

PULSE WIDTH tw (s)

SAFE OPERATING AREA EAS – Tch

100 2000
(mJ)

ID max (PULSE) *
100 μs * 1600
ID max (CONTINUOUS)
AVALANCHE ENERGY EAS

10
(A)

1 ms *
DRAIN CURRENT ID

1200

1
800
DC OPERATION
Tc = 25°C

400
0.1
* SINGLE NONPETITIVE PULSE
Tc = 25°C
Curves must be derated linearly 0
VDSS max 25 50 75 100 125 150
with increase in temperature.
0.01
1 10 100 1000 10000 CHANNEL TEMPERATURE (INITIAL) Tch (°C)

DRAIN−SOURCE VOLTAGE VDS (V)

BVDSS
15 V
−15 V IAR

VDD VDS

TEST CIRCUIT WAVE FORM

RG = 25 Ω 1 ⎛ B VDSS ⎞
Ε AS = ⋅ L ⋅ I2 ⋅ ⎜ ⎟
VDD = 90 V, L = 30.9 mH 2 ⎜B − ⎟
⎝ VDSS VDD ⎠

5 2005-01-24
 2SK3799

RESTRICTIONS ON PRODUCT USE 030619EAA

• The information contained herein is subject to change without notice.

• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.

6 2005-01-24