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Received: 25 June 2017

| Accepted: 11 August 2017

DOI: 10.1111/jace.15173

ORIGINAL ARTICLE

Thermal regimes of Li-ion conductivity in b-eucryptite

Yachao Chen1 | Sukriti Manna2 | Cristian V.Ciobanu2 | Ivar E.Reimanis1

1
Department of Metallurgical and
Materials Engineering, Colorado School Abstract
of Mines, Golden, Colorado While it is well-established that ionic conduction in lithium aluminosilicates pro-
2
Department of Mechanical Engineering, ceeds via hopping of Li ions, the nature of the various hoping-based mechanisms
Colorado School of Mines, Golden,
in different temperature regimes has not been fully elucidated. The difficulties
Colorado
associated with investigating the conduction have to do with the presence of
Correspondence grains and grain boundaries of different orientations in these usually polycrys-
Cristian V. Ciobanu, Department of
Mechanical Engineering, Colorado School talline materials. Herein, we use electrochemical impedance spectroscopy (EIS) to
of Mines, Golden, CO. investigate the ion conduction mechanisms in b-eucryptite, which is a prototypical
Email: cciobanu@mines.edu
lithium aluminosilicate. In the absence of significant structural transitions in grain
and
Ivar E. Reimanis, Department of boundaries, we find that there are three conduction regimes for the one-dimen-
Metallurgical and Materials Engineering, sional ionic motion along the c axis channels in the grains, and determine the
Colorado School of Mines, Golden, CO.
activation energies for each of these temperature regimes. Activation energies
Email: reimanis@mines.edu
computed from molecular statics calculations of the potential energy landscape
Funding information encountered by Li ions suggest that at temperatures below 440°C conduction pro-
Department of Energy, Basic Energy
ceeds via cooperative or correlated motion, in agreement with established litera-
Sciences, Grant/Award Number:
DE-FG02-07ER46397; National Science ture. Between 440°C and 500°C, the activation barriers extracted from EIS
Foundation, Grant/Award Number: measurements are large and consistent with those from atomistic calculations for
DMREF-1534503
uncorrelated Li ion hopping. Above 500°C the activation barriers decrease signifi-
cantly, which indicates that after the transition to the Li-disordered phase of
b-eucryptite, the Li ion motion largely regains the correlated character.

KEYWORDS
aluminosilicates, impedance spectroscopy, ionic conduction, lithium

1 | INTRODUCTION of thermal expansion (CTE) of b-eucryptite.8,9,16,17,19-24


The crystal structure of b-eucryptite (space group P6422
As a prototype of lithium aluminum silicates (LAS), or P6222)1,25-29 is a Li-stuffed derivative of b-quartz in
b-eucryptite (LiAlSiO4) has attracted both fundamental which half of the Si-centered tetrahedra, [SiO4]4, are
and technological interest for decades due to its phase replaced with Al-centered tetrahedra, [AlO4]5.30,31 In
transformations,1-5 unusual thermo-mechanical properties,6- ordered b-eucryptite, [SiO4]4 and [AlO4]5 tetrahedra are
10
and the one-dimensional nature of its ionic conduc- arranged in a spiral along the 64 (or 62) screw axis, form-
tion.11-15 The superior Li ion conduction makes b-eucryp- ing open channels along which the Li ions reside at well-
tite a promising candidate for electrolyte applications, defined locations.1,20 The effect of temperature on this
including thermal batteries and high-temperature solid structure consists in disordering of the Li ions at
electrodes.16-18 Furthermore, applications such as elec- ~440°C,27,30,32-37 while at very high temperatures disor-
trothermal devices as well as thermal shock resistant dering of the Si- and Al- centered tetrahedra could also
structures can benefit from the overall negative coefficient occur.20,30

J Am Ceram Soc. 2018;101:347–355. wileyonlinelibrary.com/journal/jace © 2017 The American Ceramic Society | 347
348
| CHEN ET AL.

Li motion in the channels is of special interest8,38 for correlated motion, in agreement with established literature.
applications of eucryptite as an ionic conductor. It has been Between 440°C and 500°C, the activation barriers
reported that the Li ionic conductivity parallel to the c-axis extracted from EIS measurements are consistent with those
is three orders of magnitude greater than that perpendicular computed from atomistic calculations for uncorrelated Li
to the c-axis in the temperature range from 200°C to ion hopping. Above 500°C the activation barriers obtained
600°C,12,13 which makes b-eucryptite an excellent material from EIS decrease significantly, which indicates that after
to study one-dimensional diffusion.33,34,39 While such stud- the transition to the Li-disordered phase of b-eucryptite,
ies have been reported in the literature for different prepa- the Li ion motion largely regains the correlated character.
rations and different temperature regimes12-15,21,34,39-41 and The correlated diffusion of Li atoms has often referred to
the mechanism of conduction is accepted to be Li ion hop- as superionic conductivity. The main conclusion drawn
ping along the channels, there is a rather large range of from the present results is that as temperature is increased
activation energies reported for the hopping. For example, from room temperature through the order-disorder transfor-
the activation energy for hopping below 500°C has been mation temperature, there is a loss (at 440 -500°C) and
reported to be 0.89 eV,15 0.8 eV,21 0.79 eV,41 0.74 then a re-entry (past 500°C) of the superionic character of
eV,12,13 and 0.62 eV,39 with the variations attributed to dif- the conduction.
ferences in the measurement or computation techniques,
crystallinity, and sample preparations. The variation from
0.62 eV39 to 0.89 eV15 is significant, as the same tempera- 2 | EXPERIMENTAL PROCEDURE
ture would lead to vastly different conductivity values for
these energy values because of the activated nature of Li Pure b-eucryptite powders were synthesized via a chemical
ion hopping. The presence of channels in the structure of precursor route,23,43,44 in which tetraethylorthosilicate
eucryptite may lead one to expect large ionic conductivity (TEOS-Sigma Aldrich, St. Louis, MO USA), aluminum
and low activation energy. However, the activation energy nitrate (Al(NO3)39H2O-Sigma Aldrich), and lithium nitrate
of b-eucryptite is not particularly small, as illustrated by (LiNO3-Sigma Aldrich) were used as precursors. Proper
any of the above figures.12-15,21,34,39-41 Two factors may amounts of ethanol (95%), distilled water, and HNO3 were
conspire to decrease the ionic conductivity in polycrys- added to help form a homogeneous solution. This solution
talline eucryptite: first, under normal processing conditions, was then treated with excess ammonium hydroxide (~10%-
the grains in the microstructure are randomly oriented and 15%) to form gel, which was then dried at 80°C to obtain
therefore their fast conducting c-axis channels are not all amorphous powders. These powders were first heated up to
parallel to each other; second, grain boundaries likely pre- 400°C and held for 1 hour in order to remove water and
sent an impediment to Li-ion diffusion. gaseous products formed by decomposition of the nitrates,
Despite a significant body of work on Li-ion conduc- then calcined in air at 1100°C for 15 hours to form single
tion in b-eucryptite,12,14,16,18,41,42 particularly on single- phase b-eucryptite as confirmed by X-ray diffraction. The
crystal and glasses, there remain two key outstanding crystalline b-eucryptite powders were then ball-milled
questions for the polycrystalline material. First, why is using ZrO2 balls and ethanol to achieve a final particle size
there a variation in activation energy over a large tempera- of about 1 lm.23 The powders were subsequently poured
ture range? Such variation may correspond to different into a graphite die, 25 mm in diameter, and sintered in a
mechanisms operating in different thermal regimes, or it vacuum hot press at 1200°C for 2 hours under an applied
may correspond to the (continuous) thermal expansion or load of 30 MPa, followed by slow cooling (1°C/min).23
contraction of the structure along different directions. All pellets were found to have about 97%-98% of the theo-
Second, what is the role of the conduction through grain retical density (2.34 g/cm3) and remained single phase
boundaries and other slow ion conduction pathways (such b-eucryptite.
as hopping perpendicular to the c-axis)? Using electro- The samples used for the ionic conductivity measure-
chemical impedance spectroscopy (EIS) measurements per- ments were cut with a diamond saw to obtain the dimen-
formed at temperatures up to 900°C and atomistic-based sions of about 1 9 1 9 0.1 cm3 and were polished on the
modeling, we address these questions here and show that surfaces of the platinum contact electrodes. Gold wires
thermal expansion/contraction does not play a signficant were used as leads to collect the ionic current. Electro-
role in determining the mechanism of ionic conductivity. chemical impedance spectroscopy (EIS) of b-eucryptite
We determined the activation energies at different tempera- was performed by a two-probe method using Solartron with
tures based on a brick layer model analysis of the EIS a signal amplitude of 10 mV under open circuit voltage
data, and identified three temperature regimes characterized (OCV) conditions in the temperature range of 300°C-
by constant (and different) energy barriers. At temperatures 900°C with the frequency from 1 Hz to 6 MHz. A thermo-
below 440°C, conduction proceeds via cooperative or couple was placed next to the sample in the tube. Data
CHEN ET AL. | 349

analysis was performed with software Zview (Scribner grain boundaries (low). In the case of zirconia, the grains
Associates, Southern Pines, NC).45 A schematic microstruc- are isotropic or very nearly so, and the grain boundaries
ture based on a brick layer model (BLM)46 are shown in are assumed isotropic. Applying EIS for highly anisotropic
Figure 1, which illustrates fast conduction portions (green, materials such as b-eucryptite poses several problems: (i)
conduction parallel to the c axis) and slow portions (grain the conduction pathways pass through grains that do not all
boundaries and unfavorably oriented grains) for a given conduct equally well because of their c axes are not
pathway. aligned (Figure 1); (ii) grain boundaries are slow conduc-
tion avenues, and as such they would act similar to the
slow-conducting (i.e., unfavorably oriented) grains. There-
3 | RESULTS AND DISCUSSION fore, the conductivity and the activation barriers obtained
from EIS measurements performed on highly anisotropic
Impedance spectroscopy coupled with the BLM model for materials have an approximate or “effective” character: the
analysis47 is a technique meant strictly for a “composite” parallel conduction (and the associated barrier) refers to
medium with different ionic conductivities for the two iso- pathways that are parallel or nearly parallel to c axis, while
tropic components that make up the sample. For example, the slow conduction necessarily includes both grain bound-
the use of this technique for polycrystalline zirconia48,49 aries and unfavorably oriented grains. Below we describe
yields both the conductivity of the grains (high) and of the our results and analysis in terms of sample resistances
determined from EIS, ionic conductivities, and activation
energies for Li conduction processes.
Figure 2A displays several typical impedance spectra
of pure b-eucryptite at selected temperatures between
300°C and 900°C in Nyquist form, with the negative
imaginary part (Zimag) plotted as a function of the real
part (Zreal). As mentioned, the analysis of polycrystalline
materials is more complicated than that for single crys-
tals because of the presence of grain boundaries. For
modeling isotropic materials, the equivalent circuits nor-
mally adopt the elements corresponding to bulk, grain
boundary, and electrode.46,50,51 However, in highly aniso-
tropic materials, such as b-eucryptite, the effect of differ-
ent grain orientations is not completely captured by the
simple equivalent circuits because the grain boundaries
and slow conducting grains cannot be readily resolved.
In general, the capacitance values per unit length are in
the range of 1011-108 F/cm for the grain boundaries
and of the order of 1012 F/cm for bulk.52 The aniso-
tropy is very large for b-eucryptite, i.e., the conductivity
along the c-axis is about a thousand times higher than
that perpendicular; the capacitance associated with both
directions are similar,52 so the EIS response of the unfa-
F I G U R E 1 (A) Schematic drawing of polycrystalline b- vorably oriented grains overlaps largely with that of the
eucryptite, with one current pathway drawn through the structure. The grain boundaries. The simplified equivalent circuit, there-
green arrows represent the direction of the c-axis, whose orientation fore, adopts two parallel RC circuits connected in series
with respect to the pathway renders some grains fast (green, pathway (Figure 1B). In Figure 1B, Rk and CPEk represent the
approximately along the c axis), and some grains slow (red, where
conduction along the c-axis in the favorably oriented
the orientation is not sufficiently aligned with the pathway). (B)
grains; Rslow and CPEslow represent the slow paths and
Equivalent circuit to interpret the complex impedance spectra, where
correspond to arcs in the Nyquist plots for temperatures
R|| is the bulk resistance for conduction parallel to the c axis; Rslow
and CPEslow are the resistance and constant-phase element between 300°C and 440°C in Figure 2. Since the arcs
capacitance of the possible slow paths, including grain boundaries are not too far away from perfect semicircles, CPEslow is
and unfavorably oriented grains; CPEelectrode, capacitance of the probably negligible, but keeping it in the model does not
electrode. The constant-phase element CPE|| is represented as dotted influence our conclusions, which are solely related to
lines since even when present, it cannot be detected from the resistances. The sample-electrode impedance is repre-
experiments [Color figure can be viewed at wileyonlinelibrary.com] sented by CPEelectrode
350
| CHEN ET AL.

The resistance determined from the Nyquist plots can


be used to determine the overall (total) conductivity rt of
the samples using rt = L/RtA, where A is the electrode
cross section area and L is the length of the pellet; for tem-
peratures below 440°C, we can use length and area esti-
mates to also determine the effective conductivity of the
slow paths (rslow, pertaining to the grain boundaries and
unfavorably oriented grains) and that along the c axis in
grains, rk. These conductivity results are plotted in Fig-
ure 3. We emphasize that the subscript t (total) refers to
the total, overall conductivity of the sample, and not the
fact that the rslow and rk would be added; only the resis-
tances are added. The values in Figure 3 for the one
dimensional conductivity rk are consistent with those
reported by Alpen et al,12,13 and the results for the total
conductivity rt are somewhat lower than those from Shin-
Ici et al14
Next, we determine and discuss activation energies,
F I G U R E 2 (A) Impedance spectra of pure b-eucryptite at which determine ionic conductivity via the Arrhenius equa-
selected temperatures from 300°C to 850°C. (B, C) Impedance tion
spectra and equivalent circuits at (B) 850°C and (C) 350°C [Color  
Ea
figure can be viewed at wileyonlinelibrary.com] rT ¼ B exp (1)
kT
Inspection of the data presented in Figure 2 reveal that
there are two types of impedance plots, one consisting only
in which r is the conductivity, B is a pre-exponential con-
of a linear portion (Figure 2B), and the other comprising
stant, Ea is the activation energy, k is Boltzmann’s con-
an arc and a linear portion at low frequencies (Figure 2C).
stant, and T is the temperature. This relation holds for the
Figure 2B represents the case when Rslow decreases and
one dimensional bulk conduction along the c axis. In an
becomes comparable with R|| (e.g., at temperatures higher
effective or average way, we will adopt this Arhennius
than 440°C); in such cases, it is possible to extract only
relation for the slow paths as well, since both in the grain
the total resistance (Rt) from the intercept of the linear por-
boundary and perpendicular to the c axis the Li ion diffu-
tion with the horizontal axis.47,53 Figure 2C corresponds to
sion is more likely to occur by hoping rather than by par-
the case where the characteristic frequency associated with
tial attack of Li ions on the Si–O bonds.58 The assumption
the Li motion along the c axis is within the experimentally
attainable frequency domains: this corresponds to tempera-
tures from 300°C to 440°C, where the Nyquist plots con-
sist of an arc followed by linear spike at lower frequencies.
The low-frequency tails in the spectra are due to the block-
ing effect of the platinum electrode,54-56 and they are well
described using a constant-phase element. The high-
frequency end of the arc does not pass through the origin
when extrapolated. The non-zero intercept at high frequen-
cies corresponds to the grain bulk resistance for fast con-
duction (i.e., parallel to the c axis), R||. The equivalent
circuit is shown as an inset in Figure 2C. A second resis-
tance, Rslow, that effectively corresponds to grain bound-
aries and unfavorably oriented grains, is extracted from
the length of the horizontal chord of the arc, as illustrated
in Figure 2C. Given that the Pt electrodes contact all a
large area of the sample (Section 2), it is reasonable to
assume that the resistance of the contact electrodes is
negligible (e.g., work of Martin and Mecartney),57 so F I G U R E 3 Overall, conductivity (rt ), conductivity along the
c-axis grains (rk ), and along slow paths (rslow ) as functions of
Rt = R|| + Rslow.
temperature [Color figure can be viewed at wileyonlinelibrary.com]
CHEN ET AL. | 351

that Equation 1 is valid for 1-D conduction in bulk and for


the slow pathways reflects the details of ionic conduction.
Certain conduction mechanisms in other systems can rely
on activation of an electrochemical reaction followed by
hopping;49 as such, the relevant energy barrier is the sum
of the activation energy barrier of the reaction plus the bar-
rier for hopping. However, the conduction in eucryptite is
governed exclusively by hopping of Li ions from one site
to another.12-14 Since the fraction of occupied sites is low
(refer to the atomic structure in the last figure of this
work), there are always open sites surrounding the occu-
pied ones which would provide the basic reason why Equa-
tion 1 should hold for bulk and boundary separately.
Expressing the conductivity in terms of resistance
(r ¼ L=RA), subsequently taking the natural logarithm of
Equation 1, leads to a linear relation between ln R=T and
1/kT with the slope equal activation energy (Ea ): F I G U R E 4 Experimentally measured ln(R/T) as a function of 1/
R L Ea kT for total, fast grains and slow paths at low temperatures (solid
ln ¼ ln þ (2) symbols) combined with calculated values at high temperatures
T BA kT
(circled symbols). The activation energies are marked as the slopes of
The temperature dependence of ln ðR=T Þ is shown in the linear portions [Color figure can be viewed at
Figure 4. In processing the data shown in Figure 4, we wileyonlinelibrary.com]
have assumed that the motion along slow pathways (grain
boundaries, and motion across the c axis channels) remains T A B L E 1 Activation energies of the total, bulk, and grain
governed by the same mechanisms and therefore its effec- boundary in b-eucryptite, determined from resistance measurements
tive activation energy does not change. We have therefore using Arrhenius’s law. Above 440°C, the activation energy is
determined the corresponding activation energy Eslow from assumed to be 1.197 eV, hence no standard deviation is reported at
EIS data at temperatures below 440°C, and then used this these temperatures
value to compute the resistance Rslow for all temperatures Activation energy (eV)
above 440°C. From these extrapolated Rslow values and the
Temperature range (°C) Bulk|| Slow paths
total resistance Rt (from EIS measurements above 440°C),
we have extracted the one-dimensional (along c axis) resis- 900-500 0.573  0.015 1.197
tance as Rk ¼ Rt  Rslow at all the temperatures for which 500-440 1.750  0.072 1.197
it could not be obtained directly from Nyquist plots. Fig- 440-300 0.455  0.03 1.197  0.014
ure 4 shows three distinct regions for the one-dimensional
ionic conductivity in the bulk; also, by virtue of our initial
assumption, there is only one region for the slow conduc-
tion along the grain boundaries and across the c-axis. diffusion barriers have been determined via molecular stat-
The activation energies obtained from using Equation 2 ics calculations, in which Li ions are moved along one
for fitting various line segments in Figure 4 are listed in channel in a 2 9 2 9 1 supercell while the total energy is
Table 1 for different temperature regimes. A sudden evaluated at each position along that channel. The results
change in activation energy for the one-dimensional con- are shown in Figure 5, in which two cases were consid-
duction (Bulk|| in Table 1) in the temperature range from ered: one where all Li ions along one channel moved in
440°C to 500°C is apparent. However, the activation unison (Figure 5A), and the other in which only one Li ion
energy at high-temperatures (500°C-900°C) and low- was moved along the channel from one local minimum of
temperature range (300°C-440°C) are relatively similar. the energy to the next (Figure 5B). These are referred to as
The physical origin of the different temperature regimes correlated and uncorrelated diffusion, respectively.21 Fig-
for the activation barriers is investigated using atomic scale ure 5 shows that the barrier for correlated Li motion
calculations in which Li ion pathways on the potential (~0.4 eV) per Li atom is significantly smaller than the
energy landscape in a c-axis channel have been traced energy required for uncorrelated hopping (~1.2 eV). These
using the ReaxFF potential.59 The ReaxFF potential was results are obtained from single crystal calculations with a
previously used to study the amorphisation of b-eucryptite semi-empirical interatomic potential.59 As such, they are
under pressure4,5 and its response to irradiation.5,60 The qualitatively consistent with the activation barriers for the
352
| CHEN ET AL.

diffusion along c-axis (bulk||) obtained from the EIS experi- disorder transition in b-eucryptite, in which Li ions
ments (Table 1): in both of ReaxFF calculations and the change their positions in the channels in the temperature
experimental values, there is a factor of ~3 between the range from 460°C to 550°C.1,3,30,34,61 At room tempera-
activation energy associated with the uncorrelated and cor- ture, Li atoms occupy half of the available sites in the
related motion. Regardless of the correlated or uncorrelated channels. There are two types of channels (one primary
hopping, the activation energy values from the ReaxFF cal- and three secondary per unit cell), with six available tetra-
culations are somewhat smaller than those obtained in hedral sites in each channel. Li ions in the primary chan-
experiments: however, this does not prevent the assignment nel occupy sites with z=c ¼ 1=6; 1=2; 5=6 along the
of correlated and uncorrelated motion to various tempera- origin channel (x ¼ y ¼ 0), and are coplanar with Al
ture regimes, since the difference between barriers is rather atoms. Li ions occupy the other three secondary channels
large. Using ReaxFF, we have carried out the same calcula- on sites with z=c ¼ 0; 1=3; 2=3; and are coplanar with Si
tions eucryptite crystals with various lattice constants corre- atoms. This type of distribution occurs because the Al
sponding to different temperatures up to 900°C: for these tetrahedra sheets are thicker than the Si tetrahedra sheets,
cases, the energy barriers determined via ReaxFF have not since Al ions are larger than Si ions. Stuffing Li ions into
registered significant variations with temperature, which is within the Si layers reduces the dimensional mismatch of
consistent with the low thermal expansion coefficient of the Si sheets with Al sheets by enlarging the Si-tetrahedra
b-eucryptite.6-10 We conclude that the thermal expansion of sheets.20 As a result, Li is distributed such that 25% of
the lattice does not affect the diffusion mechanism in any the channel Li ions are coplanar with the Al sheet and
of the three regimes identified in Figure 4. the other 75% are coplanar with the Si sheet for a fully
We now focus on providing a qualitative reasoning for ordered b-eucryptite at room temperature.20 At tempera-
the relative magnitudes of the activation energies listed in tures above the transition, Li ions interchange with the
Table 1. Those are intrinsically related to the order- initial vacancy sites, resulting in a random distribution

F I G U R E 5 Side view of the b-eucryptite structures, with vertical channels in which Li motion can be correlated (A) or uncorrelated (B).
Energy variation along the channels and the corresponding activation barrier for moving (A) three Li atoms at a time (correlated), and (B) one Li
atom at a time (uncorrelated) [Color figure can be viewed at wileyonlinelibrary.com]
CHEN ET AL. | 353

over all framework channel sites.27 This breaks the 25-75 conduction (in bulk, parallel to the c axis): the low tem-
ratio of Al tetrahedra sheets to Si tetrahedra sheets and perature regime (below 440°C), order-disorder transforma-
causes the shrinkage of the size of the Si sheets. Thus, tion regime (440°C-500°C), and the high temperature
the activation energy for conduction in the disordered regime (above 500°C). Each of these regimes are well
structure is slightly higher than that at low temperature described by an Arrhenius equation, and the determined
for the ordered structure. Since there is no significant activation energies coupled with molecular statics calcula-
change in framework structure before and after the onset tions of the potential energy surface show that before and
of the order-disordered transformation, the activation ener- after the order-disorder transition the mechanism of Li
gies of order and disordered structure remain similar conduction is correlated hopping. Within the narrow tem-
(Table 1). However, we determined that between the perature range of the phase transformation (440°C-500°C),
ordered and disordered structure (440°C-500°C), b-eucryp- the calculated barriers are consistent with uncorrelated,
tite has a very high activation energy (Table 1). This individual hopping of Li atoms which occurs likely
likely occurs because during the transformation itself the because in this temperature range the Li atoms have not
Li ions are not interspersed regularly through the structure yet assumed (on average) equispaced positions, and the
as dictated by Coulomb interactions, but are transiting correlation between hops along the same channel is bro-
from the Si sheets to the Al sheets while at times hoping ken by closely spaced ions.
into neighboring interstices (vacancies). An example of
what hoping into adjacent vacancy sites leads to is shown
ACKNOWLEDGMENTS
in Figure 5B: in this figure, the energy barrier is high
because the final position (left hand side of the graph) of We gratefully acknowledge the support of U.S. Department
the moving ion is too close to another Li ion. While we of Energy’s Office of Basic Energy Sciences through Grant
do not simulate the full order-disorder transformation, it is No. DE-FG02-07ER46397, as well the partial support from
very likely that some Li ions hop too close to one the National Science Foundation through Grant No.
another during disordering,30 leading to the high barrier DMREF-1534503. We thank Dr. Ryan O’Hayre for
reported in the intermediate temperature regime in insightful discussions, and Mr. Chuancheng Duan for his
Table 1. A similar phenomenon has been detected in solid help in designing some of the experiments.
acid proton conductor CsH2PO4, where the disordered
structure at high temperature brings the conductivity to a
much higher level while the activation energy remains ORCID
similar to the low temperature ordered structure.53
Cristian V. Ciobanu http://orcid.org/0000-0002-8476-4467
Ivar E. Reimanis http://orcid.org/0000-0001-7401-3275
4 | CONCLUSION
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