2μm CMOS Design rules for wires:-

Micron rules, in which the layout constraints such as minimum

feature sizes and minimum allowable feature separations, are
stated in terms of absolute dimensions in micrometers.
Design rules for wires:-
The following diagram show the width of diffusions(3 μm ) and width of the
polysilicon1 & polysilicon 2 is (2 μm ).
And it also represent the minimum separation between layers and they are

1. Separation between P-diffusion and P-diffusion is 3 μm

2. Separation between N-diffusion and N-diffusion is 3 μm

3. Separation between P-diffusion and Polysilicon 2 is 1.5 μm

4. Separation between N-diffusion and Polysilicon 1 is 1 μm

5. Separation between P-diffusion and Polysilicon 1 is 1 μm

6. Separation between N-diffusion and Polysilicon 2 is 1.5 μm

7. Separation between polysilicon1 and polysilicon1 is 2.5 μm

8. Separation between polysilicon 2 and polysilicon 2 is 3 μm
The following diagram show the width of metal1 (2.5μm) and metal2(3μm)
1. Separation between metal1 and metal1 is (2.5μm)
2. Separation between metal2 and metal2 is (3μm)

Transistor design rules:-

By overlapping the polysilicon1 with N-diffusion form the NMOS
And overlapping the polysilicon1 with P-diffusion form the PMOS
By overlapping the polysilicon2 with N-diffusion form the NMOS
And overlapping the polysilicon2 with P-diffusion form the PMOS

Contact Cuts:-

When making contacts between polysilicon, diffusion and metal.

1. Metal1 to polysilicon 1 to polysilicon 2:-

2. Metal 1 to diffusion:-

3. Multiple Contact cuts:-

4.Via Metal 1 and Metal 2:-