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■ Features
● Withstands ultrahigh voltage : 1500V/1600V/1700V/1800V/2000V
● Low loss:VCE(sat)<3V
● Broad area of safe-operation.
■ Spacifications
■ Applications
●TVs ●Wide-screen TVs ●Digital TVs
¦ The products and specifications are subject to change without any notice. Please ask for the latest product standards to guarantee the satisfaction of your product requirements.
2SC5514
■ Absolute Maximum Ratings
Unit:mm
Parameter Symbol Rating Unit 15.5±0.5 3.0±0.3
φ3.2±0.1
4.5
10.0
5° 5°
26.5±0.5
Collector to emitter voltage VCES 1500 V
22.0±0.5
23.4
2.0 1.2
Collector to emitter voltage VCEO 600 V
5°
5°
Emitter to base voltage VEBO 7 V 4.0
5°
2.0±0.2
2.0
18.6±0.5
*3
Peak collector current ICP 23 A 1.1±0.1
0.7±0.1
Collector current IC 13 A
5.45±0.3 5.45±0.3
Base current IB 6 A
5.5±0.3
0.7±0.1
3.3±0.3
50*1 5°
Collector power dissipation PC 3.0*2 W
2.0
1 2 3
ICBO VCB=1000V,IE=0 - - 50 µA
Collector cutoff current
ICBO VCB=1500V,IE=0 - - 1 mA
Emitter cutoff current IEBO VEB=7V,IC=0 - - 50 µA
2SC5516
■ Absolute Maximum Ratings
Unit:mm
Parameter Symbol Rating Unit 15.5±0.5 3.0±0.3
φ3.2±0.1
4.5
10.0
5° 5°
26.5±0.5
Collector to emitter voltage VCES 1500 V
22.0±0.5
23.4
2.0 1.2
Collector to emitter voltage VCEO 600 V
5°
5°
Emitter to base voltage VEBO 7 V 4.0
5°
2.0±0.2
2.0
18.6±0.5
Peak collector current ICP 30*3 A 1.1±0.1
0.7±0.1
Collector current IC 20 A
5.45±0.3 5.45±0.3
Base current IB 8 A
5.5±0.3
0.7±0.1
3.3±0.3
70*1 5°
Collector power dissipation PC 3.5*2 W
2.0
1 2 3
ICBO VCB=1000V,IE=0 - - 50 µA
Collector cutoff current
ICBO VCB=1500V,IE=0 - - 1 mA
2SC5517
4.5
10.0
5° 5°
26.5±0.5
VCES 1600
22.0±0.5
23.4
2.0 1.2
Emitter to base voltage VEBO 7 V
5°
5°
Peak collector current ICP 20 A 4.0
5°
2.0±0.2
2.0
18.6±0.5
Collector current IC 6 A 1.1±0.1
0.7±0.1
Base current IB 3 A
5.45±0.3 5.45±0.3
40*1
Collector power dissipation PC W
5.5±0.3
3*2
0.7±0.1
3.3±0.3
5°
Junction temperature Tj 130 °C
Storage temperature Tstg -55 to +150 °C
2.0
1 2 3
TOP-3E
■ Electrical Characteristics(TC=25°C )
Parameter Symbol Conditions min typ max Unit
ICBO VCB=1000V,IE=0 - - 50 µA
Collector cutoff current
ICBO VCB=1600V,IE=0 - - 1 mA
Emitter to base voltage VEBO IE=500mA,IC=0 7 - - V
2SC5518
■ Absolute Maximum Ratings
Unit:mm
Parameter Symbol Rating Unit 15.5±0.5 3.0±0.3
φ3.2±0.1
Collector to base voltage VCBO 1500 V
4.5
10.0
5° 5°
26.5±0.5
VCES 1500
22.0±0.5
23.4
2.0 1.2
Emitter to base voltage VEBO 5 V
5°
5°
Peak collector current ICP 14*3 A 4.0
5°
2.0±0.2
2.0
18.6±0.5
Collector current IC 7 A 1.1±0.1
0.7±0.1
Base current IB 3.5 A
5.45±0.3 5.45±0.3
40*1
Collector power dissipation PC W
5.5±0.3
3*2
0.7±0.1
3.3±0.3
5°
Junction temperature Tj 150 °C
Storage temperature -55 to +150 °C
2.0
1 2 3
TOP-3E
■ Electrical Characteristics(TC=25°C )
Parameter Symbol Conditions min typ max Unit
ICBO VCB=1000V,IE=0 - - 50 µA
Collector cutoff current
ICBO VCB=1500V,IE=0 - - 1 mA
2SC5519
■ Absolute Maximum Ratings
Unit:mm
Parameter Symbol Rating Unit 15.5±0.5 3.0±0.3
φ3.2±0.1
Collector to base voltage VCBO 1700 V
4.5
10.0
5° 5°
26.5±0.5
VCES
22.0±0.5
23.4
2.0 1.2
Emitter to base voltage VEBO 5 V
5°
5°
Peak collector current ICP 16*3 A 4.0
5°
2.0±0.2
2.0
18.6±0.5
Collector current IC 8 A 1.1±0.1
0.7±0.1
Base current IB 3 A
5.45±0.3 5.45±0.3
50*1
Collector power dissipation PC W
5.5±0.3
3*2
0.7±0.1
3.3±0.3
5°
Junction temperature Tj 150 °C
Storage temperature -55 to +150 °C
2.0
1 2 3
TOP-3E
■ Electrical Characteristics(TC=25°C)
ICBO VCB=1000V,IE=0 - - 50 µA
Collector cutoff current
ICBO VCB=1700V,IE=0 - - 1 mA
Emitter to base voltage VEBO IE=500mA,IC=0 5 - - V
2SC5572
■ Absolute Maximum Ratings
Unit:mm
Parameter Symbol Rating Unit 15.5±0.5 3.0±0.3
φ3.2±0.1
Collector to base voltage VCBO 1500 V
4.5
10.0
5° 5°
26.5±0.5
VCES
22.0±0.5
23.4
2.0 1.2
Emitter to base voltage VEBO 7 V
5°
5°
Peak collector current ICP 12*3 A 4.0
5°
2.0±0.2
2.0
18.6±0.5
Collector current IC 6 A 1.1±0.1
0.7±0.1
Base current IB 3 A
40*1 5.45±0.3 5.45±0.3
Collector power dissipation PC 3*2 W
5.5±0.3
0.7±0.1
3.3±0.3
5°
Junction temperature Tj 150 °C
Storage temperature -55 to +150 °C
2.0
1 2 3
TOP-3E
■ Electrical Characteristics(TC=25°C)
2SC5584
■ Absolute Maximum Ratings
Unit:mm
Parameter Symbol Rating Unit
φ 3.3±0.2
20.0±0.5 5.0±0.3
Collector to base voltage VCBO 1500 V 3.0
3.0
6.0
Collector to emitter voltage VCES 1500 V
4.0
10.0
26.0±0.5
2.0
Collector to emitter voltage VCEO 600 V
1.5
2.0
1.5
2.5
Peak collector current ICP 30*3 A
20.0±0.5
Solder Dip
3.0±0.3 2.7±0.3
1.0±0.2
Collector current IC 20 A 0.6±0.2
5.45±0.3
Base current IB 8 A 10.9±0.5
*1
150
Collector power dissipation PC 3.5*2 W
1 2 3
Junction temperature Tj 150 °C
■ Electrical Characteristics(TC=25°C)
Parameter Symbol Conditions min typ max Unit
ICBO VCB=1000V,IE=0 - - 50 µA
Collector cutoff current
ICBO VCB=1500V,IE=0 - - 1 mA
2SC5591
■ Absolute Maximum Ratings
Unit:mm
Parameter Symbol Rating Unit 15.5±0.5 3.0±0.3
φ3.2±0.1
4.5
10.0
5° 5°
26.5±0.5
Collector to emitter voltage VCES 1700 V
22.0±0.5
23.4
2.0 1.2
Collector to emitter voltage VCEO 600 V
5°
5°
Emitter to base voltage VEBO 7 V 4.0
5°
2.0±0.2
2.0
18.6±0.5
Peak collector current ICP 30*3 A 1.1±0.1
0.7±0.1
Collector current IC 20 A
5.45±0.3 5.45±0.3
Base current IB 11 A
5.5±0.3
0.7±0.1
3.3±0.3
70*1 5°
Collector power dissipation PC 3.5*2 W
2.0
1 2 3
■ Electrical Characteristics(TC=25°C)
Parameter Symbol Conditions min typ max Unit
ICBO VCB=1000V,IE=0 - - 50 µA
Collector cutoff current
ICBO VCB=1700V,IE=0 - - 1 mA
2SC5657
■ Absolute Maximum Ratings
Unit:mm
Parameter Symbol Rating Unit 15.5±0.5 3.0±0.3
φ3.2±0.1
Collector to base voltage VCBO 1500 V
4.5
10.0
5° 5°
26.5±0.5
VCES
22.0±0.5
23.4
2.0 1.2
Emitter to base voltage VEBO 7 V
5°
5°
Peak collector current ICP 8*3 A 4.0
5°
2.0±0.2
2.0
18.6±0.5
Collector current IC 4 A 1.1±0.1
0.7±0.1
Base current IB 2 A
5.45±0.3 5.45±0.3
40*1
Collector power dissipation PC W
5.5±0.3
3*2
0.7±0.1
3.3±0.3
5°
Junction temperature Tj 150 °C
Storage temperature -55 to +150 °C
2.0
1 2 3
TOP-3E
■ Electrical Characteristics(TC=25°C)
2SC5686
■ Absolute Maximum Ratings
Unit:mm
Parameter Symbol Rating Unit 15.5±0.5 3.0±0.3
φ3.2±0.1
4.5
10.0
5° 5°
26.5±0.5
Collector to emitter voltage VCES 2000 V
22.0±0.5
23.4
2.0 1.2
Collector to emitter voltage VCEO 600 V
5°
5°
Emitter to base voltage VEBO 7 V 4.0
5°
2.0±0.2
2.0
18.6±0.5
*3
Peak collector current ICP 30 A 1.1±0.1
0.7±0.1
Collector current IC 20 A
5.45±0.3 5.45±0.3
Base current IB 11 A
5.5±0.3
0.7±0.1
3.3±0.3
70*1 5°
Collector power dissipation PC 3.5*2 W
2.0
1 2 3
■ Electrical Characteristics(TC=25°C)
Parameter Symbol Conditions min typ max Unit
ICBO VCB=1000V,IE=0 - - 50 µA
Collector cutoff current
ICBO VCB=2000V,IE=0 - - 1 mA