Japanese Journal of Applied Physics 52 (2013) 04CJ01 REGULAR PAPER

http://dx.doi.org/10.7567/JJAP.52.04CJ01

Dual Function of Single Electron Transistor Coupled with Double Quantum Dot:
Gating and Charge Sensing
Tomohiro Kambara1 , Tetsuo Kodera1;2;3
, Yasuhiko Arakawa2;4 , and Shunri Oda1
1
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
2
Institute for Nano Quantum Information Electronics, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
3
PRESTO, Japan Science and Technology Agency (JST), Kawaguchi, Saitama 332-0012, Japan
4
Institute of Industrial Science, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
E-mail: kodera.t.ac@m.titech.ac.jp
Received September 23, 2012; revised October 31, 2012; accepted October 31, 2012; published online February 20, 2013

We demonstrate gating and charge sensing functions of a lithographically defined single electron transistor (SET). The electrochemical potential
of the SET is modulated by applying a voltage to both the source and drain electrodes. The SET integrated with a double quantum dot (DQD)
works as a gate electrode for the DQD. Charge transitions in the DQD are detected by the SET through its charge sensing function. This dual
function of the SET is useful for saving space in crowded devices with many gates and charge sensors, toward the integration of multiqubits for
quantum computation. # 2013 The Japan Society of Applied Physics

1. Introduction
Quantum dots (QDs), which confine electrons in an
extremely small region, have been widely researched with
many materials and systems.1–4) There are many promising
applications of QDs, for example, as single electron
transistors (SETs),5–8) sensitive charge sensors (CSs),9,10)
and quantum bits (qubits) for quantum information proces-
sing.11,12) Qubit is a unit of quantum information obtained
by the superposition of 1 and 0 states for parallel
computation. The calculation ability of the quantum
computer is extremely higher than that of a classical
computer for certain calculations using Shor’s algorithm,
Grover’s algorithm, and so on.13,14)
Recently, qubits with semiconductors have been studied
by many researchers because of their long coherence time of
the electron spin. One or two qubits have already been
achieved by several groups.15–19) Many QDs are integrated
to be used for not only qubits but also CSs to identify the
position of an electron.19) In addition to such QDs, many
gate electrodes should be integrated to a qubit device to
control the electrochemical potential of each QD and tunnel
barriers between the QDs. However, the qubits and CSs also
occupy a large space in the device. Such a large structure for
qubits would be a problem in the integration of many QDs
to achieve a quantum information processor. Therefore,
technological development of QDs by multifunctionalization
is required to reduce the number of gates and integrate many
QDs.
In this work, we demonstrate gating and charge sensing
functions of a lithographically defined QD. The elec-
trochemical potential of integrated QDs is modulated by
applying a voltage to both their source and drain electrodes
independently. Since the modulation of the potential of a QD
also changes the potential of another capacitively coupled
QD, the QD works as a gate electrode for the other one. In
addition, charge transitions in a double QD (DQD) are
successfully detected by the integrated QD through its
charge sensing function.
2. Device Structure and Measurement Method
2.1 Device structure
The device structure we measured is shown in Fig. 1(a) as a
04CJ01-1
(a) (b)
Fig. 1. (Color online) (a) Schematic structure of QD device on SOI
wafer. DQD, SQD, and gates are insulated by dry etching and covered with
the thermally oxidized SiO2 and buried oxide. (b) SEM image with the same
design as that measured. The DQD and SQD are schematically indicated by
ovals.
bird’s-eye view. Si DQD, single QD (SQD), and gates are
fabricated by electron beam lithography, dry etching, and
thermal oxidation.9,11,20) Constricted regions between QDs
and reservoirs work as potential barriers for the DQD and
SQD. The back gate (BG) is used to induce two-dimensional
electron gas at the lower Si/SiO2 interface in the silicon-on-
insulator (SOI) layer, which acts as a gate of a metal–oxide–
semiconductor field-effect transistor (MOSFET) structure.
The induced electrons flow from the source electrode to the
drain electrode through the potential barriers and the QDs.
Figure 1(b) shows a scanning electron microscopy (SEM)
image of a device with the same design as that measured
in this experiment. The DQD and SQD are schematically
indicated by ovals. The thickness of the SOI layer is 30 nm,
and that of the buried oxide layer is 145 nm.
2.2 Measurement method
The voltages applied to the gates (Vgl , Vgm , Vgr , VgSQD , and
Vbg ) control the electrochemical potential of each QD and
modify the tunnel rate of each potential barrier.9,11) In a
typical case, source voltages of all QDs are applied at a
ground level for use as a reference voltage. On the other
hand, in this study, we apply offset voltages of the DQD
(VoDQD ) and SQD (VoSQD ) to tune the performance of each
# 2013 The Japan Society of Applied Physics
Jpn. J. Appl. Phys. 52 (2013) 04CJ01 T. Kambara et al.

Fig. 2. (Color online) Energy band schematics of the DQD (a) and SQD
(b, c). (a) A few electrons are induced in the DQD by Vbg . (b) More
electrons are induced in the SQD when the same Vbg as that of (a) is applied
because the BG has a larger capacitance to the SQD than to the DQD.
(c) The number of electrons in the SQD is reduced by applying VoSQD . The
bending of the band in the SOI layer is modulated by each offset bias with
the same Vbg to all QDs.
Fig. 3. (a) ISQD –Vgr ,Vgl characteristics for VoSQD between 0 mV (bottom
trace) and 150 mV (top trace). The traces are given an offset for clarity.
(b) IDQD –Vgr ,Vgl characteristics for VoDQD between 0 mV (bottom trace) and
150 mV (top trace). The traces are given an offset for clarity.
QD. VoDQD (VoSQD ) is applied to both the source and drain
electrodes of the DQD (SQD) [Fig. 1(a)]. Currents through
the DQD (IDQD ) and SQD (ISQD ) flow from their drain to
source electrodes, as indicated by dashed arrows. There is
no leakage current between the QDs when different offset
biases are applied because each QD is isolated by dry
etching, thermal oxidation, and buried oxide. Source–drain
voltages of the DQD (VdsDQD ) and SQD (VdsSQD ) remain
constant during VoDQD or VoSQD sweeping. The base
temperature in this experiment is 250 mK.
3. Results and Discussion
3.1 Self-modulation by offset bias
Working all QDs on the same chip in good condition is
difficult when they are driven by a common gate because the
gate has different capacitances to all QDs in the device.9) In
addition to that, threshold voltages of the QDs are often
different because of their shape difference due to the design
of the QDs and/or a fluctuation in their fabrication process
Fig. 4. (Color online) Measured current traces of the DQD for VoSQD
[Figs. 2(a) and 2(b)]. Applying a different offset voltage to between 260 mV (bottom trace) and 70 mV (top trace). The traces are given
each QD modulates the energy band bending of the QD itself an offset for clarity. Gray (red) arrows are used as visual guides. Positions of
and the number of induced electrons [Fig. 2(c)]. To confirm the Coulomb peaks are shifted by changing VoSQD .
the effect of this technique, modulations of the Coulomb
oscillations are measured [Figs. 3(a) and 3(b)]. Figure 3(a)
shows the measured current traces of the SQD as a function
of the left and right gate voltages (Vgl and Vgr , respectively) the QDs and their number is modulated by changing the
with a change in VoSQD as a parameter. There are few Fermi level of the gate. This means that QDs work as gate
small Coulomb peaks when VoSQD ¼ 0 mV because of the electrodes when an offset voltage is applied to the source
low tunneling rate through the SQD. When a negative VoSQD and drain electrodes. Figure 4 shows the measured current
is applied, the potentials of the SQD and the barriers traces of the DQD as a function of Vgl and Vgr . Here, from
relatively decrease because such potentials are defined by top to bottom, VoCS increases from 70 to 260 mV in 8 mV
the difference between the applied voltages of the BG (Vbg ) steps. VdsDQD ¼ 5 mV and VdsSQD ¼ 10 mV are fixed in all
and VoSQD . Therefore, many large Coulomb peaks are traces. An inter dot coupling of the DQD is so strong that the
observed when VoSQD ¼ 150 mV [Fig. 3(a)]. Figure 3(b) DQD behaves like an SQD because of the low negative
shows a similar measurement of the DQD with the same bias of the gates in Fig. 4.21) The Coulomb oscillation of the
applied Vbg as that in Fig. 3(a). The Coulomb peaks of the strongly coupled DQD shifts depending on the SQD
DQD are modulated by applying a negative VoDQD in potential. As a result, the gate function of the SQD is
Fig. 3(b). From these results, we demonstrate the technique successfully demonstrated. We calculated the ratio of the
of activating the SQD and DQD independently with the capacitances of Gl and Gr (CglrDQD ) and the SQD (CSQDDQD )
application of different offset voltages. to that of the DQD for comparison. CSQDDQD =CglrDQD ¼
ðe=VoSQD Þ=ðe=Vglr Þ ¼ Vglr =VoSQD ¼ 0:97 is ob-
3.2 Gating function of SQD tained, where  is the lever arm and VoSQD and Voglr
Integrated Gl , Gm , Gr , and GSQD , which are fabricated with are the distances between the Coulomb peaks in Fig. 4.22)
SOI, are used as gate electrodes for the DQD and SQD. This gating effect of the SQD, as well as those of the other
Electrons in the gates are induced by Vbg in the same way as gates, is sufficiently large to use.
04CJ01-2 # 2013 The Japan Society of Applied Physics
Jpn. J. Appl. Phys. 52 (2013) 04CJ01
Fig. 5. (Color online) (a) Charge stability diagram of the DQD. White dashed lines show the same lines in (b). (b) Differential conductance of the SQD.
The charge detection lines are clearly observed with VoSQD ¼ 200 mV. (c–e) Differential conductances of the SQD with different VoSQD values of 50 (c),
100 (d), and 150 mV (e). The charge sensing lines are less clear than that in (b).
3.3 Dual function of SQD
The SQD is useful for both charge sensing and gating
functions because it is normally integrated next to the DQD
to detect the charge transition sensitively.9,23,24) Figure 5(a)
shows a charge stability diagram of the DQD with the
applied VoSQD ¼ 0:2 V. A large current flows in several
points. The points indicate triple points that are typical of a
serially coupled DQD.11,25) White dashed lines in Fig. 5(a)
indicate the points where the number of electrons in the left
or right QD of the DQD is changed. Figure 5(b) shows the
differential conductance of the SQD in the same measure-
ment. When the electron number in the DQD is changed, the
differential conductance is changed simultaneously because
of the electric field from the DQD.26,27) To obtain the large
signal of charge detection, we should set the potential of
the SQD where its Coulomb oscillation is sharp and large.
By applying a low negative VoSQD , the charge sensing lines
become unclear [Figs. 5(c)–5(e)]. VoSQD set the SQD to the
best condition for charge detection by its charge sensing
function and the formation of the DQD by its gating function
[Fig. 5(b)].
To integrate many QDs, many gates and CSs should also
be integrated in the same device.28) This multifunctional QD
will save space in the device and enable a large-scale
integration for the quantum calculation.
4. Conclusions
We demonstrated a modulation of Coulomb oscillations of
the lithographically defined DQD and SQD by applying
offset biases. The modulation technique is used to set the
condition of each QD independently. We also developed the
gating function of the SQD to actively control the elec-
trochemical potential of the integrated DQD for the first
time. The SQD isolated by dry etching shows this additional
function. Finally, the detection of the charge transitions in
the serially coupled DQD by the SQD using its gating
04CJ01-3
T. Kambara et al.
function is successfully demonstrated. This multifunctional
QD is a useful device for not only flexible measurements
in various QD devices but also the integration of qubits
with a small number of gate electrodes for a quantum
computer.
Acknowledgements
This work was financially supported by JSPS KAKENHI
(22246040, 24102703), JST-PRESTO, the Yazaki Memorial
Foundation for Science and Technology, the Project for
Developing Innovation Systems of the Ministry of Educa-
tion, Culture, Sports, Science and Technology of Japan
(MEXT), a Grant-in-Aid for Scientific Research from the
Japan Society for the Promotion of Science, and the Global
COE Program, ‘‘Photonics Integration-Core Electronics’’,
MEXT. The devices were fabricated using the EB
lithography facilities of QNERC-TIT.
1) M. Mongillo, P. Spathis, G. Katsaros, P. Gentile, and S. De Franceschi:
Nano Lett. 12 (2012) 3074.
2) G. Katsaros, P. Spathis, M. Stoffel, F. Fournel, M. Mongillo, V. Bouchiat,
F. Lefloch, A. Rastelli, O. G. Schmidt, and S. De Franceschi: Nat.
Nanotechnol. 5 (2010) 458.
3) H. Jeong, A. M. Chang, and M. R. Melloch: Science 293 (2001) 2221.
4) T. Kodera, K. Ono, Y. Kitamura, Y. Tokura, Y. Arakawa, and S. Tarucha:
Phys. Rev. Lett. 102 (2009) 146802.
5) Y. Ono, K. Yamazaki, and Y. Takahashi: IEICE Trans. Electron. E84-C
(2001) 1061.
6) N. Akhavan, A. Afzalian, and C. Lee: IEEE Trans. Electron Devices 58
(2011) 26.
7) R. Suzuki and M. Nozue: Proc. IEEE Silicon Nanoelectronics Workshop
(SNW), 2012, p. 2.
8) M. Manoharan, B. Pruvost, H. Mizuta, and S. Oda: IEEE Trans.
Nanotechnol. 7 (2008) 266.
9) K. Horibe, T. Kodera, T. Kambara, K. Uchida, and S. Oda: J. Appl. Phys.
111 (2012) 093715.
10) C. H. Yang, W. H. Lim, F. A. Zwanenburg, and A. S. Dzurak: AIP Adv. 1
(2011) 042111.
11) G. Yamahata, T. Kodera, H. Churchill, K. Uchida, C. Marcus, and S. Oda:
# 2013 The Japan Society of Applied Physics
Jpn. J. Appl. Phys. 52 (2013) 04CJ01
Phys. Rev. B 86 (2012) 115322.
12) H. Liu, T. Fujisawa, Y. Ono, H. Inokawa, A. Fujiwara, K. Takashina, and
Y. Hirayama: Phys. Rev. B 77 (2008) 073310.
13) P. Shor: Proc. 35th Annu. Symp. Foundations of Computer Science, 1994,
p. 124.
14) L. K. Grover: Phys. Rev. Lett. 79 (1997) 325.
15) S. Nadj-Perge, S. M. Frolov, E. P. A. M. Bakkers, and L. P. Kouwenhoven:
Nature 468 (2010) 1084.
16) M. Pioro-Ladrière, T. Obata, Y. Tokura, Y. S. Shin, T. Kubo, K. Yoshida,
T. Taniyama, and S. Tarucha: Nat. Phys. 4 (2008) 776.
17) J. R. Petta, A. C. Johnson, J. M. Taylor, E. A. Laird, A. Yacoby, M. D.
Lukin, C. M. Marcus, M. P. Hanson, and A. C. Gossard: Science 309
(2005) 2180.
18) F. H. L. Koppens, C. Buizert, K. J. Tielrooij, I. T. Vink, K. C. Nowack, T.
Meunier, L. P. Kouwenhoven, and L. M. K. Vandersypen: Nature 442
(2006) 766.
19) M. D. Shulman, O. E. Dial, S. P. Harvey, H. Bluhm, V. Umansky, and A.
Yacoby: Science 336 (2012) 202.
20) T. Kambara, T. Kodera, T. Takahashi, G. Yamahata, K. Uchida, and S.
Oda: Jpn. J. Appl. Phys. 50 (2011) 04DJ05.
21) L. A. Tracy, E. P. Nordberg, R. W. Young, C. Borrás Pinilla, H. L.
04CJ01-4
T. Kambara et al.
Stalford, G. A. Ten Eyck, K. Eng, K. D. Childs, J. R. Wendt, R. K. Grubbs,
J. Stevens, M. P. Lilly, M. A. Eriksson, and M. S. Carroll: Appl. Phys. Lett.
97 (2010) 192110.
22) W. van der Wiel and S. D. Franceschi: Rev. Mod. Phys. 75 (2002) 1.
23) C. B. Simmons, M. Thalakulam, B. M. Rosemeyer, B. J. Van Bael, E. K.
Sackmann, D. E. Savage, M. G. Lagally, R. Joynt, M. Friesen, S. N.
Coppersmith, and M. A. Eriksson: Nano Lett. 9 (2009) 3234.
24) R. Brunner, Y. S. Shin, T. Obata, M. Pioro-Ladrière, T. Kubo, K. Yoshida,
T. Taniyama, Y. Tokura, and S. Tarucha: Phys. Rev. Lett. 107 (2011)
146801.
25) S. Nadj-Perge, S. M. Frolov, J. W. W. van Tilburg, J. Danon, Y. V.
Nazarov, R. Algra, E. P. A. M. Bakkers, and L. P. Kouwenhoven: Phys.
Rev. B 81 (2010) 201305(R).
26) Y. Hu, H. O. H. Churchill, D. J. Reilly, J. Xiang, C. M. Lieber, and C. M.
Marcus: Nat. Nanotechnol. 2 (2007) 622.
27) Z. Shi, C. B. Simmons, J. R. Prance, J. King Gamble, M. Friesen, D. E.
Savage, M. G. Lagally, S. N. Coppersmith, and M. A. Eriksson: Appl.
Phys. Lett. 99 (2011) 233108.
28) T. Takakura, M. Pioro-Ladrière, T. Obata, Y. S. Shin, R. Brunner, K.
Yoshida, T. Taniyama, and S. Tarucha: Appl. Phys. Lett. 97 (2010)
212104.
# 2013 The Japan Society of Applied Physics