C

Physical Constants

Table A.1 Physical constants

Physical constants Symbol Value

ET
Boltzmann’s constant k= T
1.3806488 × 10−23 J/K
= 8.62 × 10−5 eV/K
Planck’s constant h 6.62617 × 10−34 J ∙ s
= 4.14 × 10−15 eV ∙ s
Electron charge magnitude q 1.60218 × 10−19 C
−9
Free-space permittivity 𝜖0 = 10
36𝜋
8.85418 × 10−12 F/m
Free-space permeability 𝜇0 4𝜋 × 10−7 H/m
Speed of light in free space c = √𝜖1 𝜇 2.998 × 108 m/s
0 0

Mass of free electron me 9.1095 × 10−31 kg

Mass of free proton mh 1.673 × 10−27 kg
Energy 1 eV 1.60218 × 10−19 J
kT
Thermal voltage VT = q
0.0259 V at T = 300 K
Silicon band gap energy EG(Si) 1.12 eV = 1.793 × 10−19 J
Silicon-carbide band gap energy EG(SiC) 3.26 eV = 5.216 × 10−19 J
Gallium-nitride band gap energy EG(GaN) 3.39 eV = 5.43 × 10−19 J
Silicon-dioxide band gap energy EG(SiO2 ) 9 eV = 14.449 × 10−19 J
Silicon breakdown electric field EBD(Si) 2 × 105 V/cm
Silicon-carbide breakdown electric field EBD(SiC) 22 × 105 V/cm
Gallium-nitride breakdown electric field EBD(GaN) 15 × 105 V/cm
Silicon-dioxide breakdown electric field EBD(SiO2 ) 60 × 105 V/cm
Silicon relative permittivity 𝜖r(Si) 11.7
Silicon-carbide relative permittivity 𝜖r(SiC) 9.7
Gallium-nitride relative permittivity 𝜖r(GaN) 8.9
Silicon-dioxide relative permittivity 𝜖r(SiO2 ) 3.9
(continued)

Pulse-Width Modulated DC–DC Power Converters, Second Edition. Marian K. Kazimierczuk.

© 2016 John Wiley & Sons, Ltd. Published 2016 by John Wiley & Sons, Ltd.
Companion Website: www.wiley.com/go/kazimierczuk/modulatedpower2
916 Appendix C: Physical Constants

Table A.1 (Continued)

Physical constants Symbol Value

Silicon electron mobility 𝜇n(Si) 1360 cm2 /V ∙ s

Silicon hole mobility 𝜇p(Si) 480 cm2 /V ∙ s
Silicon-carbide electron mobility 𝜇n(SiC) 900 cm2 /V ∙ s
Silicon-carbide hole mobility 𝜇p(SiC) 120 cm2 /V ∙ s
Gallium-nitride electron mobility 𝜇n(GaN) 2000 cm2 /V ∙ s
Gallium-nitride hole mobility 𝜇p(GaN) 300 cm2 /V ∙ s
Silicon effective mass coefficients ke(Si) , kh(Si) 0.26, 0.39
Silicon intrinsic concentration ni(Si) 0.173 × 1010 cm−3 at T = 300 K
Silicon-carbide effective mass coefficients ke(SiC) , kh(SiC) 0.3654, 1
Silicon-carbide intrinsic concentration ni(SiC) 0.532 × 10−8 cm−3 at T = 300 K
Gallium-nitride effective mass coefficients ke(GaN) , kh(GaN) 0.232, 0.247
Gallium-nitride intrinsic concentration ni(GaN) 1.075 × 10−10 cm−3 at T = 300 K
Silicon thermal conductivity kth(Si) 1.5 W/K ∙ cm
Silicon-carbide thermal conductivity kth(SiC) 4.56 W/K ∙ cm
Gallium-nitride thermal conductivity kth(GaN) 1.3 W/K ∙ cm