FACULTY OF ENGINEERING

QUIZ 1

EEE 3076 POWER ELECTRONICS

TRIMESTER 1 SESSION 2019/2020

Group No:

Name Student ID Major

ABDULLA MUBAAH 1171300650 L.E
WABYOONA EDGAR 1171302317 L.E
PART A

A converter circuit is shown in Figure 1. It is used to control power level to the resistive load.
Select a suitable switch for this application based on datasheets given below.

The operating switching frequency of the circuit is 25 kHz.

Discuss the performance criteria for all devices, includes (but is not limited to) blocking
voltage, continuous current through the switch, switching characteristic and power
dissipation, (you can make a comparison table) and please comment about the selected device
for the switch.

BJT: https://bit.ly/2M6wVT5
MOSFET: https://bit.ly/2JstdOL
IGBT: https://bit.ly/2SuHi4g

Figure 1- switching circuit

From the figure above and using ohm’s law, the maximum current through the circuit can be
determined as follow:

Assuming no voltage drop or current losses:

V =I × R
I =250/10
I =25 A
The power Absorbed or used by the load resistor is determined as follow

P=I 2 × R
P=6250 W
In order to determine the best switching circuit for the given converter circuit, certain
parameters must be taken into account and compared. Such parameters include switching
times, power dissipation, blocking current. The parameters and their respective values
provided in the data sheets above will be used to compare and decide the best switching
circuit for the converter circuit shown in Figure 1.

Switching circuit Blocking Continuous Switching Power

Voltage Current time(tr+ton) dissipation

BJT 125V 100A __ 250W

MOSFET 600V 47A 35ns 357W

IGBT 600V 40A 82ns 72W

Figure 2-Comparison table

Before comparison we will highlight the parameters being compared

Blocking voltage: is the maximum voltage that can be applied to the switch without
damaging it.

Continuous current: Maximum current through the switching circuit.

Switching Time ( td(on), tr , td(off),tf ): Switching time includes td(on), tr , td(off), and tf
four main parameters and also represent important impact on switching loss of MOSFET.
Each one is described as below.
Figure 3- Switching time

td(on) – Turn-on Delay Time The turn-on delay time is defined as the time interval measured
between 10% of VGS rising from zero and 90% of VDS falling from rated voltage.

tr – Rise Time tr represents the time interval between VDS falling from 90% to 10% of rated
voltage. ID starts to rise and is considered to be the major turn-on losses during this period.

td(off) – Turn-off Delay Time The turn-off delay time is defined as the time interval measured
between 10% of VDS rising from zero and 90% of VGS falling from rated voltage.

tf – Fall Time - tf represents the time interval between VDS rising from 10% to 90% of rated
voltage. ID starts to fall and is considered to be the major turn-off losses during this period.

Total Power Dissipation (PD): PD represents the capability of maximum power dissipation
that a switch can handle.

Choosing the best switch.

The bipolar junction transistor (BJT) can be ruled out as a suitable switch since the blocking
voltage of the BJT (125V) is much lower than the voltage driven in the circuit (250V). if a
BJT switch was used the switch will be destroyed due to the high voltage.

However, for both the MOSFET and IGBT the blocking voltage is much higher than that of
the BJT. Both MOSFET and IGBT have a blocking voltage of 600V. therefore other
parameters need to be compared in order to choose the best switching circuit.
The power dissipation of the MOSFET switch is much higher compared to the IGBT switch.
MOSFET has a maximum power dissipation of 357W, whereas, the IGBT switch has a power
dissipation of maximum 72W. hence less power is dissipated by the IGBT compared to the
MOSFET switch.

Comparing the switching times of the MOSFET and IGBT, MOSFET takes less time
switching from ON state to OFF compared to the IGBT. The MOSFET takes 35ns while the
IGBT takes about 82ns for switching. Hence the MOSFET has a better switching time
compared to the IGBT.

Furthermore, the IGBT has a lower continuous current through the switch compared to the
MOSFET. The IGBT has a peak collector current of 20A, while MOSFET has a maximum
continuous drain current of 47A. The switching circuit has a maximum driving current of
25A as calculated.

After comparing the parameters above for the switches the most suitable switching circuit we
chose is the MOSFET. This is because:

1. Higher Blocking voltage than the BJT

2. Higher continuous current through the MOSFET.

3. Better switching time compared to the IGBT

However, the major drawback in having to choose MOSFET as switch is that it has a higher
power dissipation compared to the BJT and the IGBT switch. This may decrease the
efficiency of the switching circuit.
PART B

A Power MOSFET (SiHG47N60E (second link above)) is used as a switch for a DC-DC
converter connected to an R-L load. The input voltage is 250 V and maximum output current
is 15 A. The switch is operated at 25 kHz with 40% duty cycle. Compute the following for
the case temperature of 25C. (Reference:
https://micro.rohm.com/en/techweb/knowledge/si/s-si/03-s-si/4955)

From the given data sheet for the power MOSFET, the following parameters were used in the
following calculations.
t d(off ) =94 ns
t r=11 ns
t d (on )=2 4 ns
t f =13 ns
R DS(on)=0.053Ω

(i) Static Loss

Pon=D × I 2on × R DS

2
Pon=0.4 × 15 × 0.053

Pon=4.77W

(ii) Dynamic Loss

Pswitching= (V s (off )

2
×fs
)× (t +t
f d ( on ) + t r + t d (off ) ) × ( I ( on) )

Pswitching= ( 250×2 25 k ) × (1.42 ×10 −7

) × ( 15 )

Pswitching=6.656W

(iii) Total Loss

Ptotal=Pswitching + P on
Ptotal=6.656+ 4.77 Ptotal=11.426 W