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N 沟道增强型场效应晶体管

R N-CHANNEL MOSFET

JCS740C
主要参数 MAIN CHARACTERISTICS 封装 Package

ID 10 A
VDSS 400 V
Rdson(@Vgs=10V) 0.54 Ω
Qg 19.7nC

用途 APPLICATIONS
z 高频开关电源 z High efficiency switch
z 电子镇流器 mode power supplies
z UPS 电源 z Electronic lamp ballasts
based on half bridge
z UPS

产品特性 FEATURES
z 低栅极电荷 z Low gate charge
z 低 Crss (典型值 22pF) z Low Crss (typical 22pF )
z 开关速度快 z Fast switching
z 产品全部经过雪崩测试 z 100% avalanche tested
z 高抗 dv/dt 能力 z Improved dv/dt capability
z RoHS 产品 z RoHS product

订货信息 ORDER MESSAGE


无卤素
订 货 型 号 印 记 封 装 包 装 器件重量
Halogen
Order codes Marking Package Packaging Device Weight
Free
JCS740VC-O-V-N-B JCS740VC IPAK 否 NO 条管 Tube 0.35 g(typ)
JCS740RC-O-R-N-B JCS740RC DPAK 否 NO 条管 Tube 0.30 g(typ)
JCS740RC-O-R-N-A JCS740RC DPAK 否 NO 编带 Reel 0.30 g(typ)
JCS740SC-O-S-N-B JCS740SC TO-263 否 NO 条管 Tube 1.37 g(typ)
JCS740RC-O-S-N-A JCS740SC TO-263 否 NO 编带 Reel 1.37 g(typ)
JCS740BC-O-B-N-B JCS740BC TO-262 否 NO 条管 Tube 1.71 g(typ)
JCS740CC-O-C-N-B JCS740CC TO-220C 否 NO 条管 Tube 2.15 g(typ)
JCS740FC-O-F-N-B JCS740FC TO-220MF 否 NO 条管 Tube 2.20 g(typ)

版本:201601B 1/14
R JCS740C
绝对最大额定值 ABSOLUTE RATINGS (Tc=25℃)
数 值
项 目 符 号 Value 单
Parameter Symbol JCS740 JCS740 位
JCS740FC
VC/RC SC/BC/CC Unit
最高漏极-源极直流电压
VDSS 400 V
Drain-Source Voltage
连续漏极电流 ID T=25℃ 10 10* A
Drain Current -continuous T=100℃ 6.3 6.3* A
最大脉冲漏极电流(注 1)
Drain Current - pulse IDM 40 40* A
(note 1)
最高栅源电压
VGSS ±30 V
Gate-Source Voltage
单脉冲雪崩能量(注 2)
Single Pulsed Avalanche EAS 450 mJ
Energy(note 2)
雪崩电流(注 1)
IAR 10 A
Avalanche Current(note 1)
重复雪崩能量(注 1)
Repetitive Avalanche Current EAR 13.4 mJ
(note 1)
二极管反向恢复最大电压变化
速率(注 3)
dv/dt 5.5 V/ns
Peak Diode Recovery dv/dt
(note 3)
PD
183 134 44 W
耗散功率 TC=25℃
Power Dissipation -Derate
1.47 1.08 0.35 W/℃
above 25℃
最高结温及存储温度
Operating and Storage TJ,TSTG -55~+150 ℃
Temperature Range
引线最高焊接温度
Maximum Lead Temperature TL 300 ℃
for Soldering Purposes
*漏极电流由最高结温限制
*Drain current limited by maximum junction temperature

版本:201601B 2/14
R JCS740C
电特性 ELECTRICAL CHARACTERISTICS
项 目 符 号 测试条件 最小 典型 最大 单位
Parameter Symbol Tests conditions Min Typ Max Units
关态特性 Off –Characteristics
漏-源击穿电压
BVDSS ID=250μA, VGS=0V 400 - - V
Drain-Source Voltage
击穿电压温度特性
ΔBVDSS/Δ ID=250μA, referenced to
Breakdown Voltage Temperature - 0.4 - V/℃
TJ 25℃
Coefficient
VDS=400V,VGS=0V,
零栅压下漏极漏电流 - - 10 μA
IDSS TC=25℃
Zero Gate Voltage Drain Current
VDS=320V, TC=125℃ - - 100 μA
正向栅极体漏电流
Gate-body leakage current, IGSSF VDS=0V, VGS =30V - - 100 nA
forward
反向栅极体漏电流
Gate-body leakage current, IGSSR VDS=0V, VGS =-30V - - -100 nA
reverse
通态特性 On-Characteristics
阈值电压
VGS(th) VDS = VGS , ID=250μA 2.0 - 4.0 V
Gate Threshold Voltage
静态导通电阻
Static Drain-Source RDS(ON) VGS =10V , ID=5.0A - 0.43 0.54 Ω
On-Resistance
正向跨导 VDS = 40V, ID=5.0A(note
gfs - 9.6 - S
Forward Transconductance 4)
动态特性 Dynamic Characteristics
输入电容 VDS=25V,
Ciss - 650 809 pF
Input capacitance VGS =0V,
输出电容 f=1.0MHZ
Coss - 70 95 pF
Output capacitance
反向传输电容
Crss - 25 33 pF
Reverse transfer capacitance

版本:201601B 3/14
R JCS740C
电特性 ELECTRICAL CHARACTERISTICS
开关特性 Switching Characteristics
延迟时间 Turn-On delay time td(on) VDD=200V,ID=10A,RG=25Ω - 20 50 ns
上升时间 Turn-On rise time tr (note 4,5) - 80 170 ns
延迟时间 Turn-Off delay time td(off) - 125 260 ns
下降时间 Turn-Off Fall time tf - 85 180 ns
栅极电荷总量 Total Gate Charge Qg VDS =320V , - 19.7 25.6 nC
栅-源电荷 Gate-Source charge Qgs ID=10A - 7.38 - nC
栅-漏电荷 Gate-Drain charge Qgd VGS =10V (note 4,5) - 4.66 - nC

漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings


正向最大连续电流
Maximum Continuous Drain IS - - 10 A
-Source Diode Forward Current
正向最大脉冲电流
Maximum Pulsed Drain-Source ISM - - 40 A
Diode Forward Current
正向压降
Drain-Source Diode Forward VSD VGS=0V, IS=10A - 1.5 - V
Voltage
反向恢复时间
trr - 217 - ns
Reverse recovery time VGS=0V, IS=10A
反向恢复电荷 dIF/dt=100A/μs (note 4)
Qrr - 2.45 - μC
Reverse recovery charge
热特性 THERMAL CHARACTERISTIC
最大
项 目 符 号 Max 单 位
Parameter Symbol JCS740 JCS740 Unit
JCS740FC
VC/RC SC/BC/CC
结到管壳的热阻
Rth(j-c) 0.68 0.93 2.86 ℃/W
Thermal Resistance, Junction to Case
结到环境的热阻
Rth(j-A) 110 62.5 62.5 ℃/W
Thermal Resistance, Junction to Ambient

注释: Notes:
1:脉冲宽度由最高结温限制 1 : Pulse width limited by maximum junction
2:L=7.9mH, IAS=10A, VDD=50V, RG=25 Ω,起始结 temperature
温 TJ=25℃ 2: L=7.9mH, IAS=10A, VDD=50V, RG=25 Ω,Starting
3:ISD ≤10A,di/dt ≤300A/μs,VDD≤BVDSS,起始结温 TJ=25℃
TJ=25℃ 3 : ISD ≤10A,di/dt ≤300A/μs,VDD≤BVDSS, Starting
4:脉冲测试:脉冲宽度≤300μs,占空比≤2% TJ=25℃
5:基本与工作温度无关 4:Pulse Test:Pulse Width ≤300μs,Duty Cycle≤2%
5:Essentially independent of operating temperature

版本:201601B 4/14
R JCS740C
特征曲线 ELECTRICAL CHARACTERISTICS (curves)

On-Region Characteristics Transfer Characteristics


VGS
Top 15V
10V
8V 10
7V
I D [A]

10 6.5V
6V 25℃

I D [A]
5.5V
Bottom 5V

150℃

Notes: Notes:
1. 250μs pulse test 1.250μs pulse test
2.VDS=40V
2. TC=25℃
1 0.1
1 10 2 4 6 8 10
V DS [V] V GS [V]

On-Resistance Variation vs. Body Diode Forward Voltage Variation


Drain Current and Gate Voltage vs. Source Current and Temperature

1.05
10
R DS ( on ) [ Ω ]

1.00

VGS=10V 25℃
I DR [A]

0.95

0.90
1
VGS=20V

0.85 150℃
Notes:
1. 250μs pulse test
0.80 Note :Tj=25℃
2. VGS=0V

0.75 0.1
0 1 2 3 4 5 6 7 8 0.4 0.6 0.8 1.0 1.2 1.4 1.6

I D [A] V SD [V]

Capacitance Characteristics Gate Charge Characteristics

12
Ciss=Cgs+Cgd(Cds=shorted)
3x10
3
Coss=Cds+Cgd VDS=320V
10
Crss=Cgd
VDS=200V
VGS Gate Source Voltage[V]
Capacitance [pF]

8
VDS=80V
3
2x10

3
4
1x10

0 0
-1 0 1
10 10 10 0 4 8 12 16 20
V DS Drain-Source Voltage [V] Qg Toltal Gate Charge [nC]

版本:201601B 5/14
R JCS740C
特征曲线 ELECTRICAL CHARACTERISTICS (curves)

Breakdown Voltage Variation On-Resistance Variation


vs. Temperature vs. Temperature
1.2 3.0

2.5

1.1
BVDS(Normalized)

RD(on) (Normalized)
2.0

1.0 1.5

1.0

0.9 Notes:
1. VGS=0V Notes:
0.5
2. ID=250μA 1. VGS=10V
2. ID=5.0A
0.8 0.0
-75 -50 -25 0 25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150

Tj [℃ ] Tj [ ℃ ]

Maximum Safe Operating Area Maximum Safe Operating Area


For JCS740VC/RC/SC/BC/CC For JCS740FC

2
Operation in This Area 2
Operation in This Area
10 10
is Limited by RDS(ON) is Limited by RDS(ON)
10μs 10μs
I D Drain Current [A]

I D Drain Current [A]

100μs 100μs
1 1
10 10
1ms 1ms

10ms 10ms
0 0
10 100ms 10 100ms
Note: Note:
1 TC=25℃ DC 1 TC=25℃ DC
2 TJ=150℃ 2 TJ=150℃
3 Single Pulse 3 Single Pulse
-1 -1
10 10
0 1 2 0 1 2
10 10 10 10 10 10
VD S Drain-Source Voltage [V] VD S Drain-Source Voltage [V]

Maximum Drain Current


vs. Case Temperature
12

10
I D Drain Current [A]

0
25 50 75 100 125 150
T C Case Temperature [℃]

版本:201601B 6/14
R JCS740C
特征曲线 ELECTRICAL CHARACTERISTICS (curves)

Transient Thermal Response Curve


For JCS740VC/RC
1
(t) Thermal Response

D = 0 .5

0 .1 0 .2
N o te s :
0 .1 1 Z θ J C (t)= 0 .6 8 ℃ /W M a x
2 D u ty F a c to r , D = t1 /t2
0 .0 5 3 T J M -T c = P D M * Z θ J C(t)

0 .0 2
θ JC

0 .0 1 P DM
Z

0 .0 1
t1
s in g le p u ls e t2

1 E -5 1 E -4 1 E -3 0 .0 1 0 .1 1 10

t1 S q u a r e W a v e P u ls e D u r a tio n [s e c ]

Transient Thermal Response Curve


For JCS740SC/BC/CC

1
(t) Thermal Response

D = 0 .5

0 .2
N o te s :
0 .1 1 Z θ J C (t)= 0 .9 3 ℃ /W M a x
0 .1
0 .0 5 2 D u ty F a c to r, D = t1 /t2
3 T J M -T c = P D M * Z θ J C(t)
0 .0 2
θ JC

0 .0 1
P DM
Z

0 .0 1 t1
s in g le p u ls e t2

1 E -5 1 E -4 1 E -3 0 .0 1 0 .1 1 10

t1 S q u a r e W a v e P u ls e D u r a tio n [s e c ]

Transient Thermal Response Curve


For JCS740FC

D = 0 .5
(t) Thermal Response

0 .2

0 .1 N o te s :
1 Z θ J C (t)= 2 .8 6 ℃ /W M a x
0 .0 5
2 D u ty F a c to r, D = t1 /t2
3 T J M -T c = P D M * Z θ J C(t)
0 .1
0 .0 2
θ JC

0 .0 1
P DM
Z

t1
s in g le p u ls e t2

0 .0 1
1 E -5 1 E -4 1 E -3 0 .0 1 0 .1 1 10

t1 S q u a r e W a v e P u ls e D u r a tio n [s e c ]

版本:201601B 7/14
R JCS740C
外形尺寸 PACKAGE MECHANICAL DATA

IPAK 单位 Unit:mm

版本:201601B 8/14
R JCS740C
外形尺寸 PACKAGE MECHANICAL DATA

DPAK 单位 Unit:mm

编带 REEL

版本:201601B 9/14
R JCS740C
外形尺寸 PACKAGE MECHANICAL DATA

TO-262 单位 Unit:mm

版本:201601B 10/14
R JCS740C
外形尺寸 PACKAGE MECHANICAL DATA

TO-263 单位 Unit:mm

编带 REEL

外形尺寸 PACKAGE MECHANICAL DATA

版本:201601B 11/14
R JCS740C
TO-220C 单位 Unit:mm

版本:201601B 12/14
R JCS740C
外形尺寸 PACKAGE MECHANICAL DATA

TO-220MF 单位 Unit:mm

版本:201601B 13/14
R JCS740C

注意事项 NOTE
1.吉林华微电子股份有限公司的产品销售分 1. Jilin Sino-microelectronics co., Ltd sales its
为直销和销售代理,无论哪种方式,订货 product either through direct sales or sales
时请与公司核实。 agent , thus, for customers, when ordering ,
please check with our company.
2.购买时请认清公司商标,如有疑问请与公 2. We strongly recommend customers check
司本部联系。 carefully on the trademark when buying our
product, if there is any question, please
don’t be hesitate to contact us.
3.在电路设计时请不要超过器件的绝对最大 3. Please do not exceed the absolute
额定值,否则会影响整机的可靠性。 maximum ratings of the device when circuit
designing.
4.本说明书如有版本变更不另外告知 4. Jilin Sino-microelectronics co., Ltd reserves
the right to make changes in this
specification sheet and is subject to
change without prior notice.

联系方式 CONTACT
吉林华微电子股份有限公司 JILIN SINO-MICROELECTRONICS CO., LTD.

公司地址:吉林省吉林市深圳街 99 号 ADD: No.99 Shenzhen Street, Jilin City, Jilin


Province, China.
邮编:132013 Post Code: 132013
总机:86-432-64678411 Tel: 86-432-64678411
传真:86-432-64665812 Fax:86-432-64665812
网址:www.hwdz.com.cn Web Site:www.hwdz.com.cn

市场营销部 MARKET DEPARTMENT


地址:吉林省吉林市深圳街 99 号 ADD: No.99 Shenzhen Street, Jilin City, Jilin
Province, China.
邮编:132013 Post Code: 132013
电话: 86-432-64675588 Tel: 86-432-64675588
64675688 64675688
64678411-3098/3099 64678411-3098/3099
传真: 86-432-64671533 Fax: 86-432-64671533

版本:201601B 14/14

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