TIP31, TIP31A, TIP31B, TIP31C,

(NPN), TIP32, TIP32A, TIP32B,

TIP32C, (PNP)

Complementary Silicon
Plastic Power Transistors
Designed for use in general purpose amplifier and switching http://onsemi.com
applications.
Features 3 AMPERE
• Collector−Emitter Saturation Voltage − POWER TRANSISTORS
VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc COMPLEMENTARY SILICON
• Collector−Emitter Sustaining Voltage −
40−60−80−100 VOLTS,
VCEO(sus) = 40 Vdc (Min) − TIP31, TIP32
= 60 Vdc (Min) − TIP31A, TIP32A 40 WATTS
= 80 Vdc (Min) − TIP31B, TIP32B
= 100 Vdc (Min) − TIP31C, TIP32C
• High Current Gain − Bandwidth Product MARKING
fT = 3.0 MHz (Min) @ IC = 500 mAdc DIAGRAM

• Compact TO−220 AB Package 4

• Pb−Free Packages are Available*

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
MAXIMUM RATINGS TO−220AB
Rating Symbol Value Unit CASE 221A TIP3xxG

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ STYLE 1 AYWW
Collector − Emitter Voltage TIP31, TIP32 VCEO 40 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
1
TIP31A, TIP32A 60 2
3

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ
TIP31B, TIP32B 80
TIP31C, TIP32C 100

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
Collector−Base Voltage TIP31, TIP32 VCB 40 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
TIP31A, TIP32A 60
TIP31B, TIP32B 80 TIP3xx = Device Code

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
TIP31C, TIP32C 100 xx = 1, 1A, 1B, 1C,
2, 2A, 2B, 2C,

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
Emitter−Base Voltage VEB 5.0 Vdc
A = Assembly Location
Collector Current Continuous IC 3.0 Adc Y = Year

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
Peak 5.0 WW = Work Week

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
Base Current IB 1.0 Adc G Pb−Free Package

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
Total Power Dissipation PD
@ TC = 25_C 40

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ
W
Derate above 25_C 0.32 ORDERING INFORMATION
W/_C

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
See detailed ordering and shipping information in the package
Total Power Dissipation PD dimensions section on page 2 of this data sheet.

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
@ TA = 25_C 2.0 W
Derate above 25_C 0.016 W/_C

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
Unclamped Inductive Load Energy (Note 1) E 32 mJ

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
Operating and Storage Junction TJ, Tstg – 65 to _C

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
Temperature Range + 150
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 W

*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2005 1 Publication Order Number:

September, 2005 − Rev. 10 TIP31A/D
 TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Characteristic Symbol Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction−to−Ambient RqJA 62.5 _C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction−to−Case RqJC 3.125 _C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Characteristic Symbol Min Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
Collector−Emitter Sustaining Voltage (Note 2) TIP31, TIP32 VCEO(sus) 40 − Vdc
(IC = 30 mAdc, IB = 0) TIP31A, TIP32A 60 −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
TIP31B, TIP32B 80 −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
TIP31C, TIP32C 100 −
Collector Cutoff Current (VCE = 30 Vdc, IB = 0) TIP31, TIP32, TIP31A, TIP32A ICEO − 0.3 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Collector Cutoff Current (VCE = 60 Vdc, IB = 0) TIP31B, TIP31C, TIP32B, TIP32C − 0.3

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Collector Cutoff Current

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎ
(VCE = 40 Vdc, VEB = 0)
(VCE = 60 Vdc, VEB = 0)
ÎÎÎ
ÎÎÎ
ÎÎÎ
TIP31, TIP32
TIP31A, TIP32A
ICES
− 200
mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
− 200
(VCE = 80 Vdc, VEB = 0) TIP31B, TIP32B − 200

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎ
(VCE = 100 Vdc, VEB = 0) TIP31C, TIP32C − 200

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − 1.0 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ON CHARACTERISTICS (Note 2)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc) hFE 25 − −
DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc) 10 50

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Collector−Emitter Saturation Voltage (IC = 3.0 Adc, IB = 375 mAdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VCE(sat) − 1.2 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Base−Emitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc) VBE(on) − 1.8 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎ
Current−Gain − Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT 3.0 − MHz
Small−Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 20 − −
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

ORDERING INFORMATION
Device Package Shipping
TIP31 TO−220 50 Units / Rail
TIP31G TO−220 50 Units / Rail
(Pb−Free)
TIP31A TO−220 50 Units / Rail
TIP31AG TO−220 50 Units / Rail
(Pb−Free)
TIP31B TO−220 50 Units / Rail
TIP31BG TO−220 50 Units / Rail
(Pb−Free)
TIP31C TO−220 50 Units / Rail
TIP31CG TO−220 50 Units / Rail
(Pb−Free)
TIP32 TO−220 50 Units / Rail
TIP32G TO−220 50 Units / Rail
(Pb−Free)
TIP32A TO−220 50 Units / Rail
TIP32AG TO−220 50 Units / Rail
(Pb−Free)
TIP32B TO−220 50 Units / Rail
TIP32BG TO−220 50 Units / Rail
(Pb−Free)
TIP32C TO−220 50 Units / Rail
TIP32CG TO−220 50 Units / Rail
(Pb−Free)

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2
 TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)

TC TA
40 4.0

PD, POWER DISSIPATION (WATTS)

TC
30 3.0

20 2.0

TA
10 1.0

0 0
0 20 40 60 80 100 120 140 160

T, TEMPERATURE (°C)

Figure 1. Power Derating

TURN−ON PULSE VCC

APPROX 2.0
RC IC/IB = 10
+11 V
1.0 TJ = 25°C
Vin SCOPE 0.7
Vin 0 tr @ VCC = 30 V
RB 0.5
VEB(off)
t, TIME (ms)

t1
0.3 tr @ VCC = 10 V
t3 Cjd << Ceb
APPROX
+11 V t1 ≤ 7.0 ns −4.0 V
0.1
100 < t2 < 500 ms
Vin t3 < 15 ns 0.07 td @ VEB(off) = 2.0 V
0.05
0.03
t2 DUTY CYCLE ≈ 2.0%
0.02
TURN−OFF PULSE APPROX − 9.0 V 0.03 0.05 0.1 0.3 0.5 1.0 3.0

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS. IC, COLLECTOR CURRENT (AMP)

Figure 2. Switching Time Equivalent Circuit Figure 3. Turn−On Time

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3
 TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1.0
0.7
D = 0.5
0.5

0.3
0.2
0.2
0.1
0.1 P(pk)
0.05 ZqJC(t) = r(t) RqJC
0.07
RqJC(t) = 3.125°C/W MAX
0.05 D CURVES APPLY FOR POWER
0.02
0.03 PULSE TRAIN SHOWN t1
READ TIME AT t1 t2
0.02
0.01 TJ(pk) − TC = P(pk) ZqJC(t)
SINGLE PULSE DUTY CYCLE, D = t1/t2
0.01
0.01 0.02 0.05 1.0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k
t, TIME (ms)

Figure 4. Thermal Response

10 There are two limitations on the power handling ability of

a transistor: average junction temperature and second
5.0
IC, COLLECTOR CURRENT (AMP)

breakdown. Safe operating area curves indicate IC − VCE

100ms
5.0ms limits of the transistor that must be observed for reliable
2.0 operation; i.e., the transistor must not be subjected to greater
1.0ms dissipation than the curves indicate.
1.0 SECONDARY BREAKDOWN
The data of Figure 5 is based on T J(pk) = 150_C; TC is
LIMITED @ TJ ≤ 150°C
THERMAL LIMIT @ TC = 25°C variable depending on conditions. Second breakdown pulse
0.5
(SINGLE PULSE) limits are valid for duty cycles to 10% provided T J(pk)
BONDING WIRE LIMIT v 150_C. T J(pk) may be calculated from the data in
0.2 CURVES APPLY TIP31A, TIP32A Figure 4. At high case temperatures, thermal limitations will
BELOW RATED VCEO TIP31B, TIP32B
TIP31C, TIP32C
reduce the power that can be handled to values less than the
0.1 limitations imposed by second breakdown.
5.0 10 20 50 100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 5. Active Region Safe Operating Area

3.0 300
2.0 IB1 = IB2
TJ = +25°C
ts′ IC/IB = 10
ts′ = ts − 1/8 tf 200
1.0 tf @ VCC = 30 V TJ = 25°C
CAPACITANCE (pF)

0.7
0.5
t, TIME (s)
μ

0.3 tf @ VCC = 10 V 100

Ceb
0.2
70
0.1
0.07 50 Ccb
0.05
0.03 30
0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 40
IC, COLLECTOR CURRENT (AMP) VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Turn−Off Time Figure 7. Capacitance

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 TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)

500 2.0

VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)

300 TJ = 150°C VCE = 2.0 V TJ = 25°C
1.6
hFE , DC CURRENT GAIN

25°C
100
1.2 IC = 0.3 A 1.0 A 3.0 A
70 −55 °C
50

30 0.8

0.4
10
7.0
5.0 0
0.03 0.05 0.07 0.1 0.3 0.5 0.7 1.0 3.0 1.0 2.0 5.0 10 20 50 100 200 500 1000
IC, COLLECTOR CURRENT (AMP) IB, BASE CURRENT (mA)

Figure 8. DC Current Gain Figure 9. Collector Saturation Region

1.4 +2.5

θV, TEMPERATURE COEFFICIENTS (mV/°C)

TJ = 25°C +2.0 *APPLIES FOR IC/IB ≤ hFE/2
1.2
+1.5 TJ = −65°C TO +150°C
1.0
V, VOLTAGE (VOLTS)

+1.0

0.8 +0.5 *qVC FOR VCE(sat)

VBE(sat) @ IC/IB = 10 0
0.6 −0.5
VBE @ VCE = 2.0 V
0.4 −1.0
−1.5 qVB FOR VBE
0.2 VCE(sat) @ IC/IB = 10
−2.0
0 −2.5
0.003 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 0.003 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMP)

Figure 10. “On” Voltages Figure 11. Temperature Coefficients

R BE , EXTERNAL BASE−EMITTER RESISTANCE (OHMS)

103 107
VCE = 30 V VCE = 30 V
102 IC = 10 x ICES
IC, COLLECTOR CURRENT (A)

106
μ

TJ = 150°C
101
IC ≈ ICES
105
100 100°C

104 IC = 2 x ICES
10−1 REVERSE FORWARD

10−2 25°C 103 (TYPICAL ICES VALUES

OBTAINED FROM FIGURE 12)
ICES
10−3 102
−0.4 −0.3 −0.2 −0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6 20 40 60 80 100 120 140 160
VBE, BASE−EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C)

Figure 12. Collector Cut−Off Region Figure 13. Effects of Base−Emitter Resistance

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 TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)

PACKAGE DIMENSIONS

TO−220
CASE 221A−09
ISSUE AA

NOTES:
SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI
−T− PLANE
Y14.5M, 1982.
B F C 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
T S BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
4
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
Q A
A 0.570 0.620 14.48 15.75
1 2 3 B 0.380 0.405 9.66 10.28
U C 0.160 0.190 4.07 4.82
H D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
K G 0.095 0.105 2.42 2.66
Z H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
L R N 0.190 0.210 4.83 5.33
V Q 0.100 0.120 2.54 3.04
J R 0.080 0.110 2.04 2.79
G S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
D U 0.000 0.050 0.00 1.27
N V 0.045 −−− 1.15 −−−
Z −−− 0.080 −−− 2.04
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
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6