Ordering number : ENA0834 2SC6092LS

SANYO Semiconductors
DATA SHEET
NPN Triple Diffused Planar Silicon Transistor

2SC6092LS Color TV Horizontal Deflection

Output Applications
Features
• High speed.
• High breakdown voltage (VCBO=1500V).
• Adoption of high reliability HVP process.
• Adoption of MBIT process.

Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO 1500 V
Collector-to-Emitter Voltage VCEO 700 V
Emitter-to-Base Voltage VEBO 5 V
Collector Current IC 8 A
Collector Current (Pulse) ICP 20 A
2.0 W
Collector Dissipation PC
Tc=25°C http://www.DataSheet4U.net/
35 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C

Electrical Characteristics at Ta=25°C

Ratings
Parameter Symbol Conditions Unit
min typ max
Collector Cutoff Current ICBO VCB=800V, IE=0A 10 µA
Collector Cutoff Current ICES VCE=1500V, RBE=0Ω 10 mA
Collector Sustain Voltage VCEO(sus) IC=100mA, IB=0A 700 V
Emitter Cutoff Current IEBO VEB=4V, IC=0A 1 mA
Continued on next page.

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
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customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

N2107KC TI IM TC-00000764 No. A0834-1/4

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 2SC6092LS
Continued from preceding page.
Ratings
Parameter Symbol Conditions Unit
min typ max
VCE(sat)1 IC=2.25A, IB=0.45A 0.1 0.3 V
Collector-to-Emitter Saturation Voltage
VCE(sat)2 IC=4.5A, IB=0.9A 2 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=4.5A, IB=0.9A 1.5 V
hFE1 VCE=5V, IC=1A 10
DC Current Gain
hFE2 VCE=5V, IC=5A 5.3 7.5
Fall Time tf IC=3A, IB1=0.6A, IB2=--1.2A 0.2 µs

Package Dimensions Switching Time Test Circuit

unit : mm (typ)
7509-003
IB1

10.0 4.5 OUTPUT

INPUT IB2
3.2 2.8 PW=20µs
D.C.≤1% RB
RL
3.5

VR
7.2

66.7Ω
50Ω
16.0

+ +
100µF 470µF
16.1

0.6

VBE= --5V VCC=200V

0.9
3.6

1.2 1.2
14.0

0.75 0.7

1 2 3 1 : Base
2 : Collector
2.4

3 : Emitter

2.55 2.55 SANYO : TO-220FI(LS)

IC -- VCE http://www.DataSheet4U.net/
IC -- VBE
8 9
VCE=5V
1.8A 1.6A
A
2.0
8
7 1.4A
1.2A
7
Collecotr Current, IC -- A

Collector Current, IC -- A

6 1.0A
0.8A 6
5
0.6A
C

5
20°
25°C
C

4
0.4A
--40°
1
Ta=

4
3
0.2A 3

2
2
0.05A
1 1
IB=0A
0 0
0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Collector-to-Emitter Voltage, VCE -- V IT02643 Base-to-Emitter Voltage, VBE -- V IT02644
hFE -- IC VCE(sat) -- IC
7 5
VCE=5V IC / IB=5
5
Ta=120°C
3
25°C
Saturation Voltage, VCE(sat) -- V

2
3
25°C
DC Current Gain, hFE

2 --40°C 1.0
7
5
Collector-to-Emitter

10

7 3
5 2

3 0.1
Ta= --40°C
2 7
5 120°C
1.0 3
0.1 2 3 5 7 1.0 2 3 5 7 10 0.1 2 3 5 7 1.0 2 3 5 7 10
Collector Current, IC -- A IT02645 Collector Current, IC -- A IT02646

No. A0834-2/4
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 2SC6092LS
SW Time -- IC SW Time -- IB2
7 10
VCC=200V VCC=200V
5 IC / IB1=5 7 IC=3A
tstg
IB2 / IB1=2 5 IB1=0.6A
Switching Time, SW Time -- µs

Switching Time, SW Time -- µs

3
R load ts R load
3 tg
2
2

1.0
1.0
7
7
5
5 tf
3
3
2
tf
2

0.1 0.1
0.1 2 3 5 7 1.0 2 3 5 7 10 0.1 2 3 5 7 1.0 2 3 5 7
Collector Current, IC -- A IT02647 Base Current, IB2 -- A IT02648
Forward Bias A S O Reverse Bias A S O
5 5
3 ICP=20A 3
2
2
IC=8A
10

10
0µ

7
Collector Current, IC -- A

Collector Current, IC -- A
10
s

5
30

7
0µ

3 DC
s

op 5
1m

2
era
s

tio
10m

1.0 n 3
7
s

2
5
3
1.0
2
7
0.1 5
7 L=500µH
5 3 IB2= --1A
3 2
2
Tc=25°C Tc=25°C
Single pulse Single pulse
0.01 0.1
1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 10 2 3 5 7 100 2 3 5 7 1000 2 3
Collector-to-Emitter Voltage, VCE -- V IT12436 Collector-to-Emitter Voltage, VCE -- V IT12437
PC -- Ta http://www.DataSheet4U.net/
PC -- Tc
2.5 40

35
Collector Dissipation, PC -- W
Collector Dissipation, PC -- W

2.0
30

25
1.5
No
he 20
at
sin
1.0 k
15

10
0.5
5

0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C IT12438 Case Temperature, Tc -- °C IT12439

No. A0834-3/4
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 2SC6092LS

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This catalog provides information as of November, 2007. Specifications and information herein are subject
to change without notice.

PS No. A0834-4/4
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