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MOSFET Design Calculations Guide

As the oxide thickness (Tox) increases or the channel length (L) increases, Idsat decreases. When Tox increases, the capacitance Cox decreases, resulting in a lower Idsat according to the equation Idsat = (W/2L)μnCox(VGS - VT)2. Similarly, when L increases, the term (W/2L) decreases, again lowering Idsat.

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74 views2 pages

MOSFET Design Calculations Guide

As the oxide thickness (Tox) increases or the channel length (L) increases, Idsat decreases. When Tox increases, the capacitance Cox decreases, resulting in a lower Idsat according to the equation Idsat = (W/2L)μnCox(VGS - VT)2. Similarly, when L increases, the term (W/2L) decreases, again lowering Idsat.

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JUANnn100
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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MOSFET Design Calculations II

Jose Valdez and Stella Quinones*

Electrical and Computer Engineering


The University of Texas at El Paso

*stellaq@[Link]
MOSFET Design Calculations II
Create an Excel spreadsheet that calculates VDSAT and IDSAT for a channel width (W) of 10 m and
for channel length values (L) of 1 m and 2 m using the values of Tox, Cox, and VT determined for
the NFET with an n+poly gate modeled in the first assignment for NA values of 1015, 5 x 1015, 1016,
5 x 1016, 1017, and 5 x 1017/cm3 and Tox values of 5, 10 and 15 nm. Use the format shown below
for the second spreadsheet, and place this spreadsheet directly below the first. Assume that m=1,
VGS = 2 V and nchannel = nbulk/3. What happens to Idsat when the oxide thickness (Tox) increases or
when the channel length (L) increases? Write your answer below the spreadsheet.
VGS = 2 V VGS = 2 V VGS = 2 V VGS = 2 V VGS = 2 V VGS = 2 V
VGS = 2 V VGS = 2 V VGS = 2 V
L = 1m L = 1m L = 1m L = 2m L = 2m L = 2m
5 nm 10 nm 15 nm 5 nm 10 nm 15 nm 5 nm 10 nm 15 nm

NA W n L L VGS - VT VGS - VT VGS - VT IDSAT IDSAT IDSAT IDSAT IDSAT IDSAT

cm-3 m cm2/Vs m m V V V mA mA mA mA mA mA
1015

5 x 1015

1016

5 x 1016

1017

5 x 1017

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