MOSFET PROBLEM SET

Khairul Alam
Professor, EEE, East West University, Dhaka
Physical Operation
1. Sketch the cross section of nMOS and pMOS transistors, show different layers, and label the
terminals.
2. Define threshold voltage. Write the mode of operation of a MOS in terms of terminal voltages.
3. Briefly explain how the channel is created in a MOSFET.
4. Draw the ID-VDS (or VSD) characteristics, show triode and saturation regions, and write the
conditions for those regions in terms of terminal voltages.
5. Draw the ID-VGS (or VSG) characteristics and show threshold voltage in your plot.
6. Between an nMOS and a pMOS which one will you prefer and why?
7. Define overdrive voltage. Is it positive or negative in inversion mode?
8. Differentiate between a MOSFET and a BJT.
9. Briefly explain channel length modulation.
10. Draw the ID-VGS (or VSG) characteristics showing channel length modulation (Early effect).

I-V Characteristics

1) Consider a process technology for which Lmin = 0.4 μm, tox = 8 nm, μn = 450 cm2/V-s, and VT
= 0.7 V.
a. Find Cox and kn.
b. For a MOSFET with W/L = 8 m / 0.8 m, calculate the values of VOV, VGS, and VDSmin
needed to operate the transistor in the saturation region with a dc current ID = 100 μA.
c. For the device in (b), find the values of VOV and VGS required to cause the device to
operate as a 1000- resistor for very small vDS.
2) For a 0.8-μm process technology for which tox = 15 nm and μn = 550 cm2/V-s, find Cox, kn, and
the overdrive voltage VOV required to operate a transistor having W/L = 20 in saturation with
ID = 0.2 mA. What is the minimum value of VDS needed?
3)