Ain Shams University ECE 211: Electronics

nd
Faculty of Engineering 2 Year Electrical Engineering
Electronics & Comm. Eng. Dept. Fall 2021

Exercise 4
MOSFET

1. [Sedra, Example 5.1] Consider a process technology for which Lmin =0.4 μm, tox =8 nm,
μn =450 𝑐𝑚2 /V·s, and VTH =0.7 V.
(a) Find Cox and 𝑘𝑛′ = 𝜇𝑛 𝐶𝑜𝑥 .
(b) For a MOSFET with W/L =8 μm/0.8 μm, calculate the values of VOV , VGS, and
VDSmin needed to operate the transistor in the saturation region with a dc current ID =
100 μA.
(c) For the device in (b), find the values of VOV and VGS required to cause the device to
operate as a 1k resistor for very small VDS.

2. [Sedra, Exercise 5.3] A circuit designer intending to operate a MOSFET in saturation is

considering the effect of changing the device dimensions and operating voltages on the
drain current ID. Specifically, by what factor does ID change in each of the following
cases?
(a) The channel length is doubled.
(b) The channel width is doubled.
(c) The overdrive voltage is doubled.
(d) The drain-to-source voltage is doubled.
(e) Changes (a), (b), (c), and (d) are made simultaneously.
(f) Which of these cases might cause the MOSFET to leave the saturation region?

3. [Sedra, Example 5.6] Analyze the circuit shown below to determine the voltages at all
2
nodes and the currents through all branches. Let VTHN = 1 V and 𝑘𝑛′ (W/L) = 1mA/V .
Neglect the channel-length modulation effect (i.e., assume λ = 0). What is the largest
value that RD can have while the transistor remains in the saturation mode?

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4. [Sedra, Example 5.7] Design the circuit of Fig. 5.25 so that the transistor operates in
saturation with ID =0.5 mA and VD =+3 V. Let the PMOS transistor have VTHP =−1 V
2
and 𝑘𝑝′ (W/L) = 1 mA/V . Assume λ = 0.
What is the largest value that RD can have while maintaining saturation-region operation?

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5. [Sedra, Example 7.1] Consider the amplifier circuit shown below. The transistor is
specified to have Vt = 0.4 V, k’n = 0.4 mA/V2, W/L = 10, and λ = 0. Also, let VDD = 1.8
V, RD = 17.5 k, and VGS = 0.6 V.
(a) For vgs = 0 (and hence vds = 0), find VOV , ID, VDS, and Av.
(b) What is the maximum symmetrical signal swing allowed at the drain? Hence, find the
maximum allowable amplitude of a sinusoidal vgs.

6. [Razavi, Problem 6.32] Determine how the transconductance of a MOSFET (operating in

saturation) changes if
(a) W/Lis doubled but ID remains constant.
(b) VGS − VTH is doubled but ID remains constant.
(c) ID is doubled but W/L remains constant.
(d) ID is doubled but VGS − VTH remains constant.

7. [Razavi, Problem 6.31] An NMOS device operating in saturation with λ = 0 must provide
a transconductance of 1/(50 Ohm). Assume μnCox = 200 μA/V2, and VTH = 0.4 V.
(a) Determine W/L if ID = 0.5 mA.
(b) Determine W/L if VGS − VTH = 0.5V.
(c) Determine ID if VGS − VTH = 0.5V.

8. [Razavi, Example 7.17] Design a source follower to drive a 50-Ohm load with a voltage
gain of 0.5 and a power budget of 10 mW. Assume μnCox = 100 μA/V2, VTH = 0.5V, λ
= 0, and VDD = 1.8V.

9. [Sedra, Example 14.1] Synthesize a CMOS logic circuit that implements the Boolean
function 𝑌 = 𝐴 + 𝐵(𝐶 + 𝐷).

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