TUTORIAL– I (EE 311)

Question 1: The band gap of Gallium Arsenide Phosphide is 1.98 eV. Determine the
wavelength of the electromagnetic radiation that is emitted upon direct recombination of
electrons and holes in this sample.
Solution 1:
λ=
Eg = 1.98 eV = 1.98 x 1.6 x 10-19 J
C= 3 x 108 m/s
h = 6.626 x 10-34 J/sec
This gives : λ = 626 nm

Question2: A system of particles obeys Fermi Dirac statistics. Show that the probability of
vacancy of an energy level ∆E above the Fermi level EF is same as the probability of occupancy
of an energy level ∆E below EF
Solution 2:
Let the energy above EF is E1 so that:
E1 - EF = ΔE and

( )=
( )

( )=
( )
Probability of vacancy of level E1 is:
1
1 − ( 1) = 1 −
E1 − EF
1 + exp ( )
kT

ΔE
exp ( )
1− ( )= kT
ΔE
1 + exp ( )
kT
The probability of occupancy of energy level E2 below EF is:
1
( 2) =
E2 − EF
1 + exp ( )
kT
 1
( 2) =
−ΔE
1 + exp ( )
kT
#$
Where ΔE = EF - E2 . After dividing both numerator and denominator by exp ( ) we get
%&
ΔE
exp ( )
( 2) = kT
ΔE
1 + exp ( )
kT

( 2) = 1 − ( 1)

Thus probability of vacancy of energy level ΔE above Fermi level is same as the probability of
occupancy of energy level ΔE below Fermi level.

Question 3: What are n and p in a Si sample with Nd = 6 × 1016cm–3 and Na = 2 × 1016 cm–3?
With additional 6 × 1016 cm–3 of acceptors ?
Solution 3:
n = Nd - Na = 4 x 1016 cm–3
p = ni2 ⁄ n = 1020/ 4 x 1016 = 2.5 x 103 cm–3

With the additional acceptors, Na = 2 × 1016 + 6 × 1016 = 8 × 1016cm–3, holes become the
majority,
p = Na - Nd = 8 x 1016 – 6 x 1016 = 2 x 1016 cm–3
n = ni2 ⁄ p = 1020/ (2 x 1016 )= 5 x 103 cm–3

The addition of acceptors has converted the Si to P-type.