IRF830, SiHF830

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Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Dynamic dV/dt rating
VDS (V) 500 Available
• Repetitive avalanche rated
RDS(on) () VGS = 10 V 1.5
• Fast switching Available
Qg max. (nC) 38
Qgs (nC) 5.0 • Ease of paralleling
Qgd (nC) 22 • Simple drive requirements
Configuration Single • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
D
Note
* This datasheet provides information about parts that are
TO-220AB RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
G
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
S
S
designer with the best combination of fast switching,
D ruggedized device design, low on-resistance and
G
N-Channel MOSFET cost-effectiveness. 
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.

ORDERING INFORMATION
Package TO-220AB
IRF830PbF
Lead (Pb)-free
SiHF830-E3
IRF830
SnPb
SiHF830

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 500
V
Gate-Source Voltage VGS ± 20
TC = 25 °C 4.5
Continuous Drain Current VGS at 10 V ID
TC = 100 °C 2.9 A
Pulsed Drain Current a IDM 18
Linear Derating Factor 0.59 W/°C
Single Pulse Avalanche Energy b EAS 280 mJ
Repetitive Avalanche Current a IAR 4.5 A
Repetitive Avalanche Energy a EAR 7.4 mJ
Maximum Power Dissipation TC = 25 °C PD 74 W
Peak Diode Recovery dV/dt c dV/dt 3.5 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg -55 to +150
°C
Soldering Recommendations (Peak temperature) d for 10 s 300
10 lbf · in
Mounting Torque 6-32 or M3 screw
1.1 N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 24 mH, Rg = 25 , IAS = 4.5 A (see fig. 12).
c. ISD  4.5 A, dI/dt  75 A/μs, VDD  VDS, TJ  150 °C.
d. 1.6 mm from case.

S16-0754-Rev. C, 02-May-16 1 Document Number: 91063

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 IRF830, SiHF830
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Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 62
Case-to-Sink, Flat, Greased Surface RthCS 0.50 - °C/W
Maximum Junction-to-Case (Drain) RthJC - 1.7

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 500 - - V
VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.61 - V/°C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V
Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA
VDS = 500 V, VGS = 0 V - - 25
Zero Gate Voltage Drain Current IDSS μA
VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250
Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 2.7 A b - - 1.5 
Forward Transconductance gfs VDS = 50 V, ID = 2.7 A b 2.5 - - S
Dynamic
Input Capacitance Ciss VGS = 0 V, - 610 -
Output Capacitance Coss VDS = 25 V, - 160 - pF
Reverse Transfer Capacitance Crss f = 1.0 MHz, see fig. 5 - 68 -
Total Gate Charge Qg - - 38
ID = 3.1 A, VDS = 400 V,
Gate-Source Charge Qgs VGS = 10 V - - 5.0 nC
see fig. 6 and 13 b
Gate-Drain Charge Qgd - - 22
Turn-On Delay Time td(on) - 8.2 -
Rise Time tr VDD = 250 V, ID = 3.1 A - 16 -
ns
Turn-Off Delay Time td(off) Rg = 12 , RD = 79, see fig. 10 b - 42 -
Fall Time tf - 16 -
Between lead, D
Internal Drain Inductance LD - 4.5 -
6 mm (0.25") from
nH
package and center of G

Internal Source Inductance LS die contact - 7.5 -

S

Gate Input Resistance Rg f = 1 MHz, open drain 0.5 - 2.7 

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current IS MOSFET symbol D

- - 4.5
showing the 
integral reverse A
G

Pulsed Diode Forward Current a ISM p - n junction diode S

- - 18

Body Diode Voltage VSD TJ = 25 °C, IS = 4.5 A, VGS = 0 V b - - 1.6 V

Body Diode Reverse Recovery Time trr - 320 640 ns
TJ = 25 °C, IF = 3.1 A, dI/dt = 100 A/μs b
Body Diode Reverse Recovery Charge Qrr - 1.0 2.0 μC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.

S16-0754-Rev. C, 02-May-16 2 Document Number: 91063

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 IRF830, SiHF830
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Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

3.0

RDS(on), Drain-to-Source On Resistance

VGS ID = 3.1 A
101 Top 15 V VGS = 10 V
10 V 2.5
8.0 V
ID, Drain Current (A)

7.0 V
6.0 V 2.0

(Normalized)
5.5 V
5.0 V 1.5
100 Bottom 4.5 V

4.5 V 1.0

0.5
20 µs Pulse Width
TC = 25 °C
10-1 0.0
100 101 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91063_01 VDS, Drain-to-Source Voltage (V) 91063_04 TJ, Junction Temperature (°C)

Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 4 - Normalized On-Resistance vs. Temperature

VGS 1500
101 VGS = 0 V, f = 1 MHz
Top 15 V Ciss = Cgs + Cgd, Cds Shorted
10 V 1250 Crss = Cgd
8.0 V Coss = Cds + Cgd
ID, Drain Current (A)

7.0 V
Capacitance (pF)

6.0 V 1000
5.5 V 4.5 V
5.0 V 750 Ciss
100 Bottom 4.5 V

500
Coss

250
20 µs Pulse Width
TC = 150 °C Crss
10-1 0
100 101 100 101
91063_02 VDS, Drain-to-Source Voltage (V) 91063_05 VDS, Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

20
101 ID = 3.1 A
VGS, Gate-to-Source Voltage (V)

150 °C 16 VDS = 400 V

ID, Drain Current (A)

VDS = 250 V

25 °C 12 VDS = 100 V
100

4
10-1 20 µs Pulse Width
For test circuit
VDS = 50 V
see figure 13
0
4 5 6 7 8 9 10 0 8 16 24 32 40

91063_03 VGS, Gate-to-Source Voltage (V) 91063_06 QG, Total Gate Charge (nC)

Fig. 3 - Typical Transfer Characteristics Fig. 6 - Typical Gate Charge vs. Drain-to-Source Voltage

S16-0754-Rev. C, 02-May-16 3 Document Number: 91063

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 IRF830, SiHF830
www.vishay.com
Vishay Siliconix

5.0
101
ISD, Reverse Drain Current (A)

150 °C 4.0

ID, Drain Current (A)

3.0
25 °C

2.0

100 1.0

VGS = 0 V
0.0
0.4 0.6 0.8 1.0 1.2 25 50 75 100 125 150

91063_07 VSD, Source-to-Drain Voltage (V) 91063_09 TC, Case Temperature (°C)

Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 9 - Maximum Drain Current vs. Case Temperature

RD
102 VDS
Operation in this area limited
5
by RDS(on)
2
VGS
10 µs D.U.T.
ID, Drain Current (A)

10 RG
+
5
100 µs - VDD
2

1 1 ms 10 V
Pulse width ≤ 1 µs
5
10 ms Duty factor ≤ 0.1 %
2

0.1 Fig. 10a - Switching Time Test Circuit

5
TC = 25 °C
2 TJ = 150 °C VDS
Single Pulse
10-2 2 5 2 5 2 5 2 5 2 5 90 %
0.1 1 10 102 103 104

91063_08 VDS, Drain-to-Source Voltage (V)

Fig. 8 - Maximum Safe Operating Area 10 %

VGS
td(on) tr td(off) tf

Fig. 10b - Switching Time Waveforms

10
Thermal Response (ZthJC)

1
0 - 0.5

0.2 PDM
0.1
0.1 0.05 t1
0.02 Single Pulse t2
0.01 (Thermal Response)
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-2
10-5 10-4 10-3 10-2 0.1 1 10

91063_11 t1, Rectangular Pulse Duration (S)

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

S16-0754-Rev. C, 02-May-16 4 Document Number: 91063

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 IRF830, SiHF830
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Vishay Siliconix

L V(BR)DSS
VDS
Vary tp to obtain tp
required IAS VDD
RG D.U.T +
V DD
- VDS
IAS A
10 V
tp 0.01 Ω
IAS

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

600
ID
Top
EAS, Single Pulse Energy (mJ)

2.0 A
500 2.8 A
Bottom 4.5 A
400

300

200

100

VDD = 50 V
0
25 50 75 100 125 150

91063_12c Starting TJ, Junction Temperature (°C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator
Same type as D.U.T.

QG 50 kΩ
10 V 12 V 0.2 µF
0.3 µF

QGS QGD +
VDS
D.U.T. -

VG
VGS

3 mA

Charge
IG ID
Current sampling resistors

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

S16-0754-Rev. C, 02-May-16 5 Document Number: 91063

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 IRF830, SiHF830
www.vishay.com
Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

+ Circuit layout considerations

D.U.T.
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-

- +
-

Rg • dV/dt controlled by Rg +
• Driver same type as D.U.T. VDD
-
• ISD controlled by duty factor “D”
• D.U.T. - device under test

Driver gate drive

Period P.W.
D=
P.W. Period

VGS = 10 Va

D.U.T. lSD waveform

Reverse
recovery Body diode forward
current current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD

Re-applied
voltage
Body diode forward drop
Inductor current

Ripple ≤ 5 % ISD

Note
a. VGS = 5 V for logic level devices

Fig. 14 - For N-Channel


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
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91063.

S16-0754-Rev. C, 02-May-16 6 Document Number: 91063

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Package Information
www.vishay.com
Vishay Siliconix
TO-220-1
A MILLIMETERS INCHES
E DIM.
MIN. MAX. MIN. MAX.
F
A 4.24 4.65 0.167 0.183
ØP b 0.69 1.02 0.027 0.040
Q

b(1) 1.14 1.78 0.045 0.070

H(1)

c 0.36 0.61 0.014 0.024

D 14.33 15.85 0.564 0.624
E 9.96 10.52 0.392 0.414
D

e 2.41 2.67 0.095 0.105

e(1) 4.88 5.28 0.192 0.208
F 1.14 1.40 0.045 0.055
H(1) 6.10 6.71 0.240 0.264
1 2 3
J(1) 2.41 2.92 0.095 0.115
L 13.36 14.40 0.526 0.567
L(1)

L(1) 3.33 4.04 0.131 0.159

M* ØP 3.53 3.94 0.139 0.155
Q 2.54 3.00 0.100 0.118
b(1)
ECN: X15-0364-Rev. C, 14-Dec-15
L

DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM

C
b
e
J(1)
e(1)

Package Picture
ASE Xi’an

Revison: 14-Dec-15 1 Document Number: 66542

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Legal Disclaimer Notice
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Disclaimer

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Revision: 08-Feb-17 1 Document Number: 91000