G.C.E.

T
GREATER NOIDA
POWER ELECTRONICS LAB

Experiment no. - 1

OBJECT: To find the holding current, latching current and V-I characteristics of SCR.

APPARATUS REQUIRED:

1. milliammeter ((0-30mA, DC)

2. Milliammeter (0-300mA, DC)

3. Voltmeter (0-30V, DC)

4. Kit for SCR characteristics

THEORY:

Thyristor Characteristics:‐ A thyristor is a four layer semiconductor device of

PNPN structure with three PN junctions. It has three terminal anode, cathode and

gate. When the anode voltage is made positive with respect to cathode, the

junctions J1 and J3 are forward biased. The junctions J2 is reversed biased and,

only a small leakage current flows from anode to cathode. The thyristor is then

said to be in the OFF mode. If a Anode to Cathode voltage is increased to a

sufficiently large value, the reversed biased junction J2 will break. This is known as avalanche
breakdown and the corresponding voltage is called forward

breakdown voltage VBO. Since junctions J1 and J3 are already forward biased,

there will be free movement of carriers across all three junctions, resulting in a large forward anode
current. The device will then be in a conducting state or on

state. The voltage drop would be due to the ohmic drop in the four layers and it is

small, typically, 1V. In the on state, the anode current is limited by an external impedance or
resistance.

Latching current is the minimum anode current required to maintain the thyristor

in the on state immediately after the thyristor has been turned on and the gate
 signal has been removed. Once the thyristor is turned on, it behaves like a

conducting diode and there is no control over the device. The device will continue

to conduct because there is no depletion layer on the junction J2 due to the free

movements of the carriers. However if the forward anode current is reduced

below a level known as the holding current, a depletion layer will develop around

the junction J2, due to reduced number of carriers and the thyristor will be in the

blocking state. Holding current is the minimum anode current required to

maintain the thyristor in the on state.

Holding current is less than latching current. A thyristor can be turned on by

increasing the forward voltage VAK beyond VBO, but such a turn on could be

destructive. In practice, the forward voltage is maintained below VBO and the

thyristor is turned on by applying a positive voltage between its gate and cathode.

Once a thyristor is turned on by a gating signal and its anode current is greater

than holding current, the device continues to conduct due to positive feedback,

even if the gating signal is removed.

PROCEDURE:

(To find the latching current of SCR)

1. Make the connections as shown in the circuit diagram.

2. Keep the DC1 & DC2 at minimum positions and switch on the supply.
3. Now increase the gate current by gradually rotating DC2 pot. In clockwise direction
until SCR starts conducting. This is indicated by the fall in voltage across the SCR and
anode current starts falling.
4. Disconnect the gate current and observe that the SCR remains in on-state or not, If
SCR is not in on-state again provide the gate current to SCR. Increase the anode
current in steps of 0.1mA by DC1 pot, until the SCR maintains on-state after
removing the gate current. This value of anode current is latching current of SCR.

(To find the holding current of SCR)

1. Repeat the steps no. 1,2 and 3 of previous procedure.

2. Increase the anode current to more than the latching current with the help of pot
DC1 and remove the gate current.
 (To find the V-I characteristics of SCR)

1. Connect the circuit as shown in figure.

2. Adjust DC1 and DC2 to minimum value.
3. Increase the voltage VAK across SCR in steps of 1 volt up to about 7 volts.
4. Now gradually increase the gate current by DC2 until SCR becomes turn-on. Note the
VAK, anode current IA and the gate current IG.
5. Increase the load by connecting 470 ohm resistors in parallel one by one, note the I A
and VAK.
6. Plot the graph between IA and the VAk.

Circuit diagram of SCR

OBSERVATIONS:
Latching current (IL) = ………….
Holding current (IH) = ………….
VI characteristics of SCR
Gate current (IG) = …………

S.no. Voltage across SCR (VAK) Anode current (IAK)

RESULT:

COMMENTS:

PRECAUTIONS:
1. Do not increase the gate current more than 10mA.
2. Do not increase the anode current more than 300mA.