IRF9530, SiHF9530

www.vishay.com
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY • Dynamic dV/dt rating
VDS (V) -100 • Repetitive avalanche rated Available
RDS(on) () VGS = -10 V 0.30 • P-channel
Available
Qg max. (nC) 38 • 175 °C operating temperature
Qgs (nC) 6.8 • Fast switching
Qgd (nC) 21 • Ease of paralleling
Configuration Single • Simple drive requirements
• Material categorization: for definitions of compliance
S please see www.vishay.com/doc?99912
TO-220AB Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
G example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.

DESCRIPTION
S
D Third generation power MOSFETs from Vishay provide the
G D designer with the best combination of fast switching,
P-Channel MOSFET
ruggedized device design, low on-resistance and
cost-effectiveness. 
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.

ORDERING INFORMATION
Package TO-220AB
IRF9530PbF
Lead (Pb)-free
SiHF9530-E3
IRF9530
SnPb
SiHF9530

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS -100
V
Gate-Source Voltage VGS ± 20
TC = 25 °C - 12
Continuous Drain Current VGS at - 10 V ID
TC = 100 °C -8.2 A
Pulsed Drain Current a IDM -48
Linear Derating Factor 0.59 W/°C
Single Pulse Avalanche Energy b EAS 400 mJ
Repetitive Avalanche Current a IAR -12 A
Repetitive Avalanche Energy a EAR 8.8 mJ
Maximum Power Dissipation TC = 25 °C PD 88 W
Peak Diode Recovery dV/dt c dV/dt - 5.5 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg -55 to +175
°C
Soldering Recommendations (Peak temperature) d for 10 s 300
10 lbf · in
Mounting Torque 6-32 or M3 screw
1.1 N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = -25 V, starting TJ = 25 °C, L = 4.2 mH, Rg = 25 , IAS = -12 A (see fig. 12).
c. ISD  -12 A, dI/dt  140 A/μs, VDD  VDS, TJ  175 °C.
d. 1.6 mm from case.

S16-0754-Rev. C, 02-May-16 1 Document Number: 91076

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 IRF9530, SiHF9530
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Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 62
Case-to-Sink, Flat, Greased Surface RthCS 0.50 - °C/W
Maximum Junction-to-Case (Drain) RthJC - 1.7

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = -250 μA -100 - - V
VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = -1 mA - -0.10 - V/°C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250 μA -2.0 - -4.0 V
Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA
VDS = -100 V, VGS = 0 V - - -100
Zero Gate Voltage Drain Current IDSS μA
VDS = -80 V, VGS = 0 V, TJ = 150 °C - - -500
Drain-Source On-State Resistance RDS(on) VGS = -10 V ID = -7.2 A b - - 0.30 
Forward Transconductance gfs VDS = -50 V, ID = -7.2 Ab 3.7 - - S
Dynamic
Input Capacitance Ciss - 860 -
VGS = 0 V,
Output Capacitance Coss VDS = -25 V, - 340 - pF
f = 1.0 MHz, see fig. 5
Reverse Transfer Capacitance Crss - 93 -
Total Gate Charge Qg - - 38
ID = -12 A, VDS = -80 V,
Gate-Source Charge Qgs VGS = -10 V - - 6.8 nC
see fig. 6 and 13 b
Gate-Drain Charge Qgd - - 21
Turn-On Delay Time td(on) - 12 -
Rise Time tr VDD = -50 V, ID = -12 A, - 52 -
ns
Turn-Off Delay Time td(off) Rg = 12 ,RD = 3.9, see fig. 10 b - 31 -
Fall Time tf - 39 -

Internal Drain Inductance LD Between lead, D

- 4.5 -
6 mm (0.25") from
package and center of G
nH
Internal Source Inductance LS die contact - 7.5 -
S

Gate Input Resistance Rg f = 1 MHz, open drain 0.4 - 3.3 

Drain-Source Body Diode Characteristics
MOSFET symbol
Continuous Source-Drain Diode Current IS D
- - -12
showing the 
integral reverse G
A
Pulsed Diode Forward Current a ISM p -n junction diode S - - -48

Body Diode Voltage VSD TJ = 25 °C, IS = -12 A, VGS = 0 V b - - -6.3 V

Body Diode Reverse Recovery Time trr - 120 240 ns
TJ = 25 °C, IF = -12 A, dI/dt = 100 A/μs b
Body Diode Reverse Recovery Charge Qrr - 0.46 0.92 μC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.

S16-0754-Rev. C, 02-May-16 2 Document Number: 91076

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 IRF9530, SiHF9530
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Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

RDS(on), Drain-to-Source On Resistance

VGS 3.0
ID = - 12 A
Top - 15 V VGS = - 10 V
- 10 V 2.5
- ID, Drain Current (A)

- 8.0 V
- 7.0 V
- 6.0 V 2.0

(Normalized)
- 5.5 V
101 - 5.0 V 1.5
Bottom - 4.5 V

- 4.5 V 1.0

0.5
20 µs Pulse Width
TC = 25 °C
100 0.0
10-1 100 101 - 60- 40 - 20 0 20 40 60 80 100 120 140 160 180
91076_01 - VDS, Drain-to-Source Voltage (V) 91076_04 TJ, Junction Temperature (°C)

Fig. 1 -Typical Output Characteristics, TC = 25 °C Fig. 4 -Normalized On-Resistance vs. Temperature

VGS 1800
VGS = 0 V, f = 1 MHz
Top - 15 V Ciss = Cgs + Cgd, Cds Shorted
- 10 V 1500 Crss = Cgd
- 8.0 V
- ID, Drain Current (A)

Coss = Cds + Cgd

- 7.0 V
Capacitance (pF)

- 6.0 V 1200
101 - 5.5 V Ciss
- 5.0 V
900
Bottom - 4.5 V

- 4.5 V 600 Coss

300 Crss
20 µs Pulse Width
TC = 175 °C
100 0
10-1 100 101 100 101

91076_02 - VDS, Drain-to-Source Voltage (V) 91076_05 - VDS, Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics, TC = 175 °C Fig. 5 -Typical Capacitance vs. Drain-to-Source Voltage

20
ID = - 12 A
- VGS, Gate-to-Source Voltage (V)

25 °C
16 VDS = - 80 V
- ID, Drain Current (A)

VDS = - 50 V
101 175 °C 12 VDS = - 20 V

4
20 µs Pulse Width For test circuit
VDS = - 50 V
see figure 13
100 0
4 5 6 7 8 9 10 0 10 20 30 40 50
91076_03 - VGS, Gate-to-Source Voltage (V) 91076_06 QG, Total Gate Charge (nC)

Fig. 3 -Typical Transfer Characteristics Fig. 6 -Typical Gate Charge vs. Gate-to-Source Voltage

S16-0754-Rev. C, 02-May-16 3 Document Number: 91076

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 IRF9530, SiHF9530
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Vishay Siliconix

12
- ISD, Reverse Drain Current (A)

10

- ID, Drain Current (A)

101 175 °C
8

25 °C 6

100
4

2
VGS = 0 V
10-1 0
1.0 2.0 3.0 4.0 5.0 25 50 75 100 125 150 175
91076_07 - VSD, Source-to-Drain Voltage (V) 91076_09 TC, Case Temperature (°C)

Fig. 7 -Typical Source-Drain Diode Forward Voltage Fig. 9 -Maximum Drain Current vs. Case Temperature

RD
103 VDS
5 Operation in this area limited
by RDS(on)
2 VGS
D.U.T.
- ID, Drain Current (A)

102 RG
5
+
10 µs - VDD
2 100 µs
10 - 10 V
1 ms Pulse width ≤ 1 µs
5
Duty factor ≤ 0.1 %
2 10 ms
1 Fig. 10a - Switching Time Test Circuit
5 TC = 25 °C
TJ = 175 °C
2
Single Pulse td(on) tr td(off) tf
0.1 VGS
2 5 2 5 2 5 2 5
0.1 1 10 102 103
10 %
91076_08 - VDS, Drain-to-Source Voltage (V)

Fig. 8 -Maximum Safe Operating Area

90 %
VDS

Fig. 10b - Switching Time Waveforms

10
Thermal Response (ZthJC)

1 D = 0.5

0.2 PDM
0.1
0.1 0.05 t1
0.02 Single Pulse t2
0.01 (Thermal Response)
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-2
10-5 10-4 10-3 10-2 0.1 1 10

91076_11 t1, Rectangular Pulse Duration (s)

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

S16-0754-Rev. C, 02-May-16 4 Document Number: 91076

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 IRF9530, SiHF9530
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Vishay Siliconix

L IAS
VDS
Vary tp to obtain
required IAS
VDS
RG D.U.T
-
+ V DD
IAS VDD
- 10 V tp
tp 0.01 Ω A
VDS

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

1200
ID
EAS, Single Pulse Energy (mJ)

Top - 4.9 A
1000 - 8.5 A
Bottom - 12 A
800

600

400

200

VDD = - 25 V
0
25 50 75 100 125 150 175

91076_12c Starting TJ, Junction Temperature (°C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator
Same type as D.U.T.

QG 50 kΩ
- 10 V 12 V 0.2 µF
0.3 µF

QGS QGD -

D.U.T. + VDS

VG
VGS

- 3 mA

Charge
IG ID
Current sampling resistors

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

S16-0754-Rev. C, 02-May-16 5 Document Number: 91076

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 IRF9530, SiHF9530
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Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

D.U.T. +
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-

- - +

Rg • dV/dt controlled by Rg +
• ISD controlled by duty factor “D” VDD
• D.U.T. - device under test -

Note
• Compliment N-Channel of D.U.T. for driver

Driver gate drive

Period P.W.
D=
P.W. Period

VGS = - 10 Va

D.U.T. lSD waveform

Reverse
recovery Body diode forward
current current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD
Re-applied
voltage
Body diode forward drop
Inductor current

ISD
Ripple ≤ 5 %

Note
a. VGS = - 5 V for logic level and - 3 V drive devices

Fig. 14 -For P-Channel










Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91076.

S16-0754-Rev. C, 02-May-16 6 Document Number: 91076

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Package Information
www.vishay.com
Vishay Siliconix
TO-220-1
A MILLIMETERS INCHES
E DIM.
MIN. MAX. MIN. MAX.
F
A 4.24 4.65 0.167 0.183
ØP b 0.69 1.02 0.027 0.040
Q

b(1) 1.14 1.78 0.045 0.070

H(1)

c 0.36 0.61 0.014 0.024

D 14.33 15.85 0.564 0.624
E 9.96 10.52 0.392 0.414
D

e 2.41 2.67 0.095 0.105

e(1) 4.88 5.28 0.192 0.208
F 1.14 1.40 0.045 0.055
H(1) 6.10 6.71 0.240 0.264
1 2 3
J(1) 2.41 2.92 0.095 0.115
L 13.36 14.40 0.526 0.567
L(1)

L(1) 3.33 4.04 0.131 0.159

M* ØP 3.53 3.94 0.139 0.155
Q 2.54 3.00 0.100 0.118
b(1)
ECN: X15-0364-Rev. C, 14-Dec-15
L

DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM

C
b
e
J(1)
e(1)

Package Picture
ASE Xi’an

Revison: 14-Dec-15 1 Document Number: 66542

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Legal Disclaimer Notice
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Disclaimer

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Revision: 08-Feb-17 1 Document Number: 91000