Mosfet Power Dissipation calculation

 Power Mosfet IRFM260

1. Maximum battery voltage = 32 V
2. Minimum battery voltage =22 V
3. Line to line resistance of motor =2.5 ohms at 25 deg C
4. Maximum stall current at 32 V , 25 deg C = 32/2.5 =12.8 A
5. Maximum stall current at 22 V , 25 deg C = 22/2.5 =8.8 A

> Using 22 v voltage source

1. Conduction Loss

Rdson =0.06 ohm

At 25 deg C

Maximum conduction loss in one transistor = ID(RMS)2 x Rdson = 8.82 x 0.06 = 4.64 W

2. Switching losses

PTOTAL SWITCHING = PSWITCHING + PGATE

Psw = [0.5 * ID * Vbus * (tr + tf) * fsw] + [0.5 * Coss * Vbus^2 * fsw] + [K * 0.5 * Qrr * Vbus * fsw]
 =0.5 x 8.8 x 22 x (212 x 10^-9) x 20,000 + 0.5 x 1100 x10^-12 x 22 x 22 x 20,000 + 0.5 x 1 x 4.9 x
10^-6 x 22 x 20,000

Psw= 1.485 W

3. Losses due to Gate

Pgate = 2 x Qg x Vdrive x fsw

Pgate = 2 x 230 x 10^-9 x 15 x 20,000

Pgate = 0.138 w

If use 10 volt
Pgate = 0.092 w

Ptotal power loss = 0.092 + 1.485 + 4.64

= 6.263 w

Efficiency = (Pin - Ptotal)*100 / Pin

Efficiency = 97.06 %
  Using 32 v voltage Source
1. Conduction Loss

Rdson =0.06 ohm

At 25 deg C

Maximum conduction loss in one transistor = ID(RMS)2 x Rdson = 12.52 x 0.06 = 9.375 W

2. Switching losses

PTOTAL SWITCHING = PSWITCHING + PGATE

Psw = [0.5 * ID * Vbus * (tr + tf) * fsw] + [0.5 * Coss * Vbus^2 * fsw] + [K * 0.5 * Qrr * Vbus * fsw]

=0.5 x 12.5 x 32 x (212 x 10^-9) x 20,000 + 0.5 x 1100 x10^-12 x 32 x 32 x 20,000 + 0.5 x 1 x 4.9 x
10^-6 x 32 x 20,000
= 0.8483 + 0.01126 + 1.568

Psw= 2.427 w

3. Losses due to Gate

Pgate = 2 x Qg x Vdrive x fsw

Pgate = 2 x 230 x 10^-9 x 15 x 20,000

Pgate = 0.138 w

If use 10 volt
Pgate = 0.092 w

Ptotal power loss = 0.138 + 2.427 + 9.375

= 11.94 w

Efficiency = (Pin - Ptotal)*100 / Pin

Efficiency = (400 -11.95)/400

Efficiency = 97.015 %

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Temprature is now 70 deg C

Rdson =0.08 ohm

At 70 deg C

Maximum conduction loss in one transistor = ID(RMS)2 x Rdson = (10.59)2 x 0.09 = 8.971 W

AT 100 deg Drain current can reach

up to 29 Amp.

Psw = [0.5 * ID * Vbus * (tr + tf) * fsw] + [0.5 * Coss * Vbus^2 * fsw] + [K * 0.5 * Qrr * Vbus * fsw]

=0.5 x 10.5 x 32 x (212 x 10^-9) x 20,000 + 0.5 x 1100 x10^-12 x 32 x 32 x 20,000 + 0.5 x 1 x 4.9 x
10^-6 x 32 x 20,000

= 0.712 + 0.01126 + 1.568

 Psw= 2.291 w

Pgate = 2 x Qg x Vdrive x fsw

Pgate = 2 x 230 x 10^-9 x 15 x 20,000

Pgate = 0.138 w

Total power dissipation:- 0.138 + 2.291 + 8.97

= 11.39 W

CASE 2:-
Diode reverse recovery loss:- [K * 0.5 * Qrr * Vbus * fsw]

Here as k=Tj / Vd

K = 100 / 32
K = 3.125
Diode loss = 3.125 x 0.5 x 4.9 x 10^-6 x 32 x 20,000
Diode loss = 4.9 W
P switching = 4.9 + 0.8483 + 0.01126
= 5.75

Total loss = 0.138 + 5.75 + 13.73

= 19.618 W

Heat Sink Requirement

 Thermal Resistance, Junction−to−Case RθJC = 0.50 °C/W
 For 100 deg C ambient and power dissipation of 19.618 w , Δt = 0.50 x 19.618 = 9.80 deg
 Junction temperature = 100 deg C + 9.80 deg C + rise in temp inside the enclosure = 109.8 + rise
in temp inside the enclosure
 RthJa Junction to ambient = 48 °C/W
  For 100C maximum ambient temperature (next to the transistor), the maximum transistor
power would be (125-100)/48 = 0.520 W.
 absolute maximum allowed transistor dissipation = 0.520 w

Maximum Transistor Die Temperature = 125

So, 125 – 48 = 77

77/ Power Dissipation

Maximum thermal resistance allow for the transistor die to ambient = 77/ 19= 3.88

Now

Thermal Resistance, Junction−to−Case RθJC = 0.50 °C/W

3.88 – 0.50 = 3.38

Thermal resistance for the heat sink = 3.38

 A IRFM260 required to dissipate 16.295 Watts.

 Maximum Junction Temperature = 125°C
 Ambient (air) temperature = 100°C.
 Rth j-c = 0.50 °C/W
 Max. case temperature when dissipating 16.295 W = 125 − (16.295 x 0.50) = 109.5°C (approx).
 Thermal resistance Rth c-hs between case and heat-sink = 0.21°C/W.
 Max. heat-sink temperature = 109.5 - (16.9 x 0.21) = 105.96°C.
 To reach ambient air temperature = 100°C Thermal resistance of heat-sink must be better than
(105 − 100) / 16.29 = 0.36 °C /W
Junction temperature

Tj = Ta + Rth(j - a) * P