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 www.fairchildsemi.com

AN-9742
Device Selection Guide for Half-Bridge Welding Machine
(IGBT & Diode)
Summary Duty Cycle of a Welding Machine
Various topologies; including two SW-forward, half-bridge In the welding industry; duty cycle refers to the minutes out
and full-bridge, have been used for low-voltage / high- of a 10-minute period a welder can be operated at maximum
current DC-ARC welding machines for system minimization rated output without overheating or burning up the power
and efficiency improvement. Of these topologies, half- source. For instance, a 140A welder with a 60% duty cycle
bridge is the most commonly used for small form factor, less must be “rested” for at least 4 minutes after 6 minutes of
than 230A capacity welding machines. Compared to full- continuous welding at maximum rated output current 140A.
bridge topology with the same power rating, half-bridge
requires more transformer wiring and higher current Allowable Duty Cycle
capacity of inverter; but requires fewer power devices. If actual current in use is smaller than a rated output current,
Taking a Fairchild evaluation board as the example, this the welder internal heating decreases. The welder then can
article presents a device selection guide for a half-bridge be used at a higher rate than the specified duty cycle. Its
welding machine application. allowable duty cycle can be calculated as:
2
 rated output current 
Description of Welding Machine =   × duty cycle of welding machine (1)
 using output current 
Generally, based on the type of welding machine, the output For example, since only 80A to 130A current would be
voltage can be calculated as shown in Table 1. required to weld a 3.2 welding rod, a 140A welder with a
Table 1. Welding Machine Output Voltage 60% duty cycle can operate for a longer time for this
application. Assuming 100A is used to weld a 3.2 welding
Welding rod, actual duty cycle is more than 78.4%.
Output Voltage Example
Machine
Besides the actual output current, the temperature also
CO2 0.04•IAC+15 0.04•200A+15=23V
affects the allowable duty cycle of a welding machine.
TIG 0.04•IAC+10 0.04•200A+10=18V Do NOT overheat welder machines.
DC ARC 0.04•IAC+20 0.04•200A+20=28V

Table 2. Feasible Welding Materials by Welding Machine

Welding Machine Gas Welding Type Steel
CO2 CO2 Mild, High Tensile
MIG He + Ar Aluminum, SUS, Aluminum Alloy
MAG Sheet Metal, Low Alloy, High Tensile
DC-TIG Stainless, Mild, Copper Alloy, Nickel Alloy, Titanium Alloy, Low Alloy
AC-TIG Aluminum Alloy, Magnesium Alloy, Bass
Mixed TIG Light Alloy, Clad Plate
DC-ARC Steel, Nonferrous Metals
AC-ARC Aluminum

© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com

Rev. 1.0.0 • 9/9/11
AN-9742
Fairchild DC-ARC Welding Machine Evaluation Board
Evaluation Board Features

Input Stage: 50A Bridge Diode (600V, 50A, Square-
Bridge Type)

Input Filter Stage: Designed Under Consideration of
Conductive Noise and Radiation Noise

Controller: PIC16F716 (8-Bit ADC and 10-Bit PWM)

Inverter Stage: FGH40N60SMD (within Co-Pak Diode)
Single or Parallel

Output Rectifier: FFA60UP30DN * Six Units (Three
Ultra-Fast Diode in Parallel)

Gate Driver: Opto-Coupler for the Isolation between
Switching Devices and Controller Dual Power Supply
+15V, -5V for IGBT Gate Voltage

AUX Power Supply: Lower Standby Consumption Green
Integrated PWM IC
Figure 1. Evaluation Board
Figure 2. Main Block Diagram
© 2011 Fairchild Semiconductor Corporation
Rev. 1.0.0 • 9/9/11
APPLICATION NOTE

Input Voltage and Frequency: 220VAC 60Hz

Output Voltage (VOUT) and Output Current (IWEL):
26VDC, 140A

Efficiency: > 80%

Idle Power: < 4W

Switching Frequency: 20KHz
Figure 2 shows the main block diagram of the welding
machine evaluation board. The output current and output
voltage of the DC-ARC welding machine evaluation board
are 26V and 140A, which constitutes a 3kW-class welding
machine. Various Fairchild Semiconductor components are
used to meet the design requirements. The switching
frequency of the machine is 20KHz. Due to their size; the
transformer and inductor are installed beside the board. An
air fan is attached for cooling.
www.fairchildsemi.com
2
AN-9742 APPLICATION NOTE

Half-Bridge Inverter Design IGBT Selection for Welding Machine

The turn ratio of the primary and secondary of the Among various power switching components, Insulated Gate
transformer in a half-bridge topology can be obtained from Bipolar Transistor (IGBT) is the most suitable device for
the equation: welding machines thanking for its high current handling
capability and high switching speed. IGBT is a voltage-
VIN ( MIN ) × DMAX controlled power transistor, similar to the power MOSFET
N1 = (2)
4 × B × Ae ∗ f SW in operation and construction. This device offers superior
(VO + VF + VI ) × N1 performance to the bipolar-transistors. It is the most cost-
N1 = (3) effective solution for high power and wide frequency-range
DMAX × VIN ( MIN )
applications. Table 3 shows the characteristics comparison
where VI = VS, IWEL = output current, Id1 & Id2 = diode of IGBT with BJT and MOSFET.
current (output high side & output low side).
Output voltage under no load condition is given by: Table 3. Device Characteristics Comparison

(VO + VF = VI ) Features BJT MOSFETS IGBT

Vnolaod = (4)
DMAX Drive Method Current Voltage Voltage
where: Drive Circuit Complex Simple Simple
VO=output voltage; Input Impedance Low High High
VF=diode drop voltage; and
Drive Power High Low Low
VI=inductor voltage drop.
Switching Speed Slow(µs) Fast(ns) Middle
Transformer’s primary and secondary current can be
Operating Fast
obtained by: Low Middle
Frequency (less than 1MHz)
N2 S.O.A Narrow Wide Wide
I1rms = × IWEL × (2 × DMAX ) (5)
N1 Saturation
Low High Low
1 Voltage
I 2rms = × IWEL × (1 + 2 × DMAX ) (6)
2
Current running through the IGBT and secondary-side Power losses of an IGBT include conduction loss and
rectifier diode can be calculated by: switching loss. The conduction loss is determined by
IGBT’s Vce(sat) value and the duty rate. The switching loss is
N2 determined by turn-on and turn-off action during IGBT’s
IGBT Current : I D = × IWEL (7)
N1 switching transient. For IGBTs, there are technical trade-off
Output rectifier diode voltage and current: characteristics between the Vce(sat) and the switching loss. If
Vce(sat) is high, switching loss becomes low and vice versa.
N2 Therefore, the designer should select an IGBT based on the
Vr = × VIN ( MAX ) , IWEL = I d12 + I d 2 2 (8)
N1 system configuration and its switching frequency. The total
loss of an IGBT can be expressed as:

Total 1 Pulse Switching Switching Conduction Loss

= X
Loss Loss (EON + EOFF) Frequency
+
(VCS(SAT) X IC X Duty)
(9)

© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com

Rev. 1.0.0 • 9/9/11 3
AN-9742 APPLICATION NOTE

Figure 3 curves show the characteristics comparison The following figures show that the switching loss becomes
between PT IGBT and field-stop IGBT. PT IGBT has NTC the dominant factor over conduction loss in 25kHz and
temperature characteristic: as temperature rises, Vce(sat) above switching frequency area.
decreases. Field-stop IGBT has PTC temperature
2.0
characteristic: as temperature rises, Vce(sat) increases. FGH40N60SMD

Total Switching Loss[Eon+Eoff], Ets[mJ]

Therefore, PT IGBT with NTC characteristic is more FGH40N60UFD
FGH40N60SFD
suitable for the application where IGBT is operated solely. HGTG20N60A4D
1.5
However, if parallel operation of IGBTs is required for Tc=25deg.C
current sharing, field-stop IGBT with PTC characteristic Tc=125deg.C
would be more appropriate.
1.0
80
FGH40N60SMD
FGH40N60UFD
70
FGH40N60SFD
0.5
HGTG20N60A4D
60
Collector Current, Ic[A]

Tc=25deg.C
Test Condition :
50 Vge=15V
Vcc=400V, Rg=10 ohm, Vge=15V
0.0
40 10 20 30 40
Collector Current, Ic[A]
30
Figure 5. Total Switching Loss Ets
20
vs. Collector Current IC
10 250
FGH40N60SMD
0 FGH40N60UFD
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 FGH40N60SFD
Total power loss of IGBT, Pd [W]

200
HGTG20N60A4D s
Collector-Emitter Voltage, Vce(sat)[V] los
Test Condition :
wer
Vcc=400V, Rg=10 ohm, po
Figure 3. HGTG20N60A4D(PT) vs. FGH40N60UFD/SFD tal
150 Vge=15V, Ic=40A, Tc=125deg.C To
(Field-Stop Gen1)
]
E off
80 n+
FGH40N60SMD 100
s[ Eo
FGH40N60UFD los
70 ing
FGH40N60SFD itch
HGTG20N60A4D Sw
60 50
Collector Current, Ic[A]

Tc=125deg.C
Vge=15V Conduction loss
50
0
40 20.0k 40.0k 60.0k 80.0k 100.0k
Switching Frequency, Fsw[KHz]
30
Figure 6. Total Power Loss of IGBT Pd
20
vs. Switching Frequency
10 The gate resistor is also very critical to the switching loss.
0
High gate resistance results in high switching loss. On the
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 other hand, high gate resistance improves EMI performance
Collector-Emitter Voltage, Vce(sat)[V] as the di/dt is lower during the switching transient. A
properly selected gate resistor should minimize the
Figure 4. FGH40N60SMD (Field-Stop Gen2)
switching loss without sacrificing system EMI performance.
Reduction of conduction loss and total device cost with
better thermal performance would be the advantage of the
parallel operation of IGBTs. However, for such kind
application, the following must be considered:

Using high-temperature PTC characteristic IGBT

Using gate resistor with ≤1% tolerance for each IGBT

Proper gate PCB layout for symmetrical current paths

Identical heat sink size and airflow for each IGBT

Same threshold voltage and saturation voltage
characteristics

© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com

Rev. 1.0.0 • 9/9/11 4
AN-9742 APPLICATION NOTE

Below are the IGBT turn-off characteristics measurements Figure 9 and Figure 10 show the IGBT operation waveforms
with JIG testing. Under the same conditions, FS Planar of the evaluation board with R-load and welding load. These
Gen2 IGBT FGH40N60SMD shows faster switching waveforms reveal that welding load consumes three times
characteristic, lower Vce(sat), and tremendously lower turn-off the current that R-load consumes. Therefore, it is important
loss compared to previous technology devices - PT and FS to select IGBT with suitable Icm parameter to avoid
Planar Gen1 IGBT. saturation at peak-current condition.
1.0
FGH40N60SMD Tc=25deg.C
FGH40N60UFD Tc=125deg.C
FGH40N60SFD
0.8 HGTG20N60A4D
Switching Loss, Eoff[mJ]

0.6

0.4

Test Condition :
0.2 Vcc=400V, Ic=40A, Vge=15V
5 10 15 20 25 30
Gate Resistance, Rg[ohm]
Figure 9. R-Load Test at IOUT=14A
Figure 7. Turn-Off Loss EO vs. Gate Resistance Rg
16
Tc=25deg.C

FGH40N60UFD
Switching loss, Eoff / A[uJ]

12

HGTG20N60A4D

FGH40N60SFD
FGH40N60SMD
8
1.6 1.8 2.0 2.2 2.4
Collector-Emitter Voltage, Vce(sat)[V]

Figure 10. Welding-Load Test at 3.2 Pie Welding Rod

Figure 8. Turn-Off Loss EOFF vs. Collector-Emitter
Vce(sat)

© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com

Rev. 1.0.0 • 9/9/11 5
AN-9742 APPLICATION NOTE

Figure 11 through Figure 16 show turn-off switching loss difference in EOFF measurement compared with the JIG test
EOFF measurement with welding load and R-load. Due to the result. The EOFF of FGH40N60SMD shows the lowest loss
leakage inductance and capacitor element, there is huge from the test.

Figure 11. EOFF Comparison Under Figure 12. EOFF Comparison Under Figure 13. EOFF Comparison Under
R-Load (FGH40N60SMD) R-Load (FGH40N60UFD) R-Load (FGH40N60SFD)

Figure 14. EOFF Comparison Under Figure 15. EOFF Comparison Under Figure 16. EOFF Comparison Under
Welding Load (FGH40N60SMD) Welding Load (FGH40N60UFD) Welding Load (FGH40N60SFD)

© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com

Rev. 1.0.0 • 9/9/11 6
AN-9742 APPLICATION NOTE

Rectifier Diode for Welding Machine 1

Qrr = × I rr × t rr (10)
Fairchild Semiconductor provides five kinds of diodes that 2
cater to different applications. Diodes with lower Vf, Irr, and Generally, the rectifier diode of welding machine has higher
Trr characteristics are ideal for welding applications; conduction loss than reverse recovery loss. Therefore, the
however, the common P_N theory dictates that the lower the diode VF value is more critical for a welding application.
Vf, the longer the Trr and vice versa. A designer chooses a For this reason, ultra-fast diode FFA60UP30DN (30A dual
diode with a trade-off point where Vf and Trr benefit the diode) is used for this evaluation board. Three diodes are
system efficiency the most. The following figures show used in parallel for each tap of transformer to lower the VF.
performance comparisons for 600V/8A diodes from each
Fairchild Semiconductor diode technology. The figures below show the performance of diodes used in
FCS Rectifier Diode Vf vs Qrr, 600V 8A
single and parallel configuration. Although the reverse
2.8
recovery loss increases, Vf is reduced with parallelized
Ulrafast
2.6 Stealth2
Hyperfast diodes and better thermal performance can be expected.
2.4 Stealth
Hyperfast2 Designer caution is required for parallel diode application to
Stealth
2.2 Stealth2 ensure that the air flow does not cause unbalanced current
Hyperfast2 conditions, as the Vf of diode tends to decrease when the
2.0 Hyperfast Tc=25deg.C
temperature rises.
VF [V]

1.8
Diode I-V charateristic
1.6 100
Tc=25deg.C
Ultrafast
1.4 Tc=125deg.C
80
1.2

1.0 IF, Forward Current [A]

0 20 40 60 80
60
Qrr [nC]

Figure 17. VF vs. Qrr Trade-Off

40
FSC Rectifier performance @ 600V, 8A
10
Ultrafast
8 Hyperfast FFA60UP30DN-Dual
6 Hyperfast2 20
Stealth FFA60UP30DN-single
4 Stealth2
2 Tc=125deg.C
0
0 0.0 0.6 1.2 1.8
IF [A]

-2 VF, Forward Voltage [V]

-4
Figure 20. Diode I-V Characteristic
-6

-8

-10 FFA60UP30DN Qrr charateristic

360
-12 VR = 150V
-80.0n -40.0n 0.0 40.0n 80.0n 120.0n 160.0n
IF = 30A
Time [sec] 300 Single
Stored Recovery charge Qrr [nC]

Dual
Figure 18. Reverse Recovery Performance
240
Tc=125deg.C

180

120

60 Tc=25deg.C

0
100 200 300 400 500
di/dt [ A/us]

Figure 21. Stored Recovery Charge Qrr vs.

Diode Current Slop di/dt

Figure 19. Test Circuit and Waveforms

© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
Rev. 1.0.0 • 9/9/11 7
AN-9742 APPLICATION NOTE

Figure 22 shows the diode switching loss when the board is

operating at 20KHz. The conduction loss is about 336µJ,
while the reverse recovery loss is only about 4µJ.

Figure 24. UIS Test Circuit

Figure 22. Diode Conduction Loss During Welding

Figure 25. FFA60UP30DN Immunity Capability

Blocking Capacitor
For half-bridge topology; if the two series DC bank
capacitors or the turn-on time of IGBTs are not matched,
DC flux occurs in the transformer. The accumulated DC flux
eventually drives transformer into saturation. The IGBTs
can be destroyed by sharply increased current due to the
saturated transformer. To block the DC flux in the
transformer core, a small DC blocking capacitor is placed in
series with the transformer primary. The value of the DC
blocking capacitor is given by:

Figure 23. Diode Reverse Recovery Loss D max× ID

During Welding Cblocking = (12)
Avalanche occurs in a diode with sudden current increase
∆VP × Fsw
when the voltage across a diode exceeds the specified Vr where ∆VP is the permissible droop in primary voltage due
value. Here, the area (Vr(AVL)*Isa) that diode does not fail is to the DC blocking capacitor.
called avalanche energy and the equation is:
Below is the waveform of the transformer primary current.
The current abruptly rise due to the saturated transformer
1 Vr ( AVL ) caused by DC bias.
EAVL = × L × Isa 2 × [ ]
2 (Vr ( AVL ) − VDD) (11)

∴ Q1 = IGBT ( BV ces ) > DUT (Vr ( AVL ))

Avalanche energy is occurred by the second output inductor,
as shown in the equation. The immunity capability is
proportional to the inductance. The inductance of a welding
machine is generally designed as small value as several µH,
and diode immunity capability value becomes an important
factor for choosing a device.
Avalanche can occur in the secondary-side rectifier of a
welding machine; especially when the welding work is
completed and the reverse pass occurs by inductor.
Immunity capability is measured using a circuit as shown in
Figure 24 with the graph in Figure 25 showing avalanche
energy test result waveform. Figure 26. IGBT Saturation Current
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
Rev. 1.0.0 • 9/9/11 8
AN-9742 APPLICATION NOTE

Figure 27. Zoom of IGBT Saturation Current Figure 28. PWM Convert 40KHz to 20KHz

Power Supply Structure and Design

MOSFET integrated IC FSMG0465R is used for power
supply. Its simple peripheral circuit and 66KHz switching Gate Driver Design
frequency reduce the PCB and transformer size. In addition, A transformer, opto-coupler, or HVIC can be used for a gate
the efficiency of power has been maximized by the driver. Necessary supply voltages for different gate drivers
minimization of idling power that can be achieved from low are listed as:
power consumption in Standby Mode (<1W at 230VAC input
at 0.5W load). There are transformer type and SMPS type
HVIC Driver: +15V, 0V (High and Low Gate),
for the substitute power supply. SMPS type, compared to + 24V, 0V (Output Detect), +5V, 0V (Controller)
linear transformer type, has stable output power over the Otpo-Coupler Driver : +15V, 0V, -5V (High-Side Gate),
influence of input serge, sag, and noise; and minimal design +15V, 0V, -5V (Low-Side Gate), +24V, 0V (Output Detect),
of size and weight is possible. In addition, transformer type +5V, 0V (Controller)
has a fixed input voltage, whereas SMPS has a wide input Pulse Transformer: +24V, 0V (Output Detect),
voltage range of 80VAC~264VAC, which can be used for free +5V, 0V (Controller)
voltage welding machine without additional operation. The opto-coupler and transformer provide isolation between
However, it is necessary to consider counter measures for the control circuit and IGBTs. However, a transformer may
noise as the switching noise may affect main inverter. For cause half bridge cross-conduction due to the offset voltage
further information about Fairchild Power Switches of gate-pulse dead-time stage. Through an by integrated
(FPS™), refer to the application note AN-4150 found at: high-voltage MOSFET, the HVIC provides isolations
http://www.fairchildsemi.com/an/AN/AN-4150.pdf. between the control circuit and the high-side IGBT. This
does not work with negative supply voltage. A negative
Controller Design supply voltage is necessary for HVIC during a fast
The evaluation board uses PIC16f716 for the control commutation in a half-bridge topology to prevent dv/dt
circuits. PIC16f716 controller consists of four ports of 8-bit shoot-through. The shoot-through is linked to a fast voltage
AD converter and one port PWM timer with 9-bit, 40KHz variation across one of the two IGBTs. A current flowing
resolution. To generate two PWM pulses from one PWM through collector-emitter capacitor can bring the gate
signal, a D flip-flop and an AND gate are used to divide the voltage of an IGBT, when turned off, to rise due to Miller
40KHz PWM into 20KHz PWM pulse (see Figure 28). effect and obtain a cross conduction into the leg.
R2
+15V
+5V +5V
27k +5V

C11 R19 C15

D1 D2 U1 PIC16C711 C10 10uF/10V 330 U5 104
14

J3
1N4937 1N4937 104 C12 2 PS2501 8
4

2 104 U2A 6 Gate1_1

VD D

CT 1 C1 R3 C2 17 U3A Q2 3
PRE

R1 104 RA0/AN0 2 5 1 R17 1K 5

22uF/10V 1k D Q
D3 D4 10 ohm/3W 3 4 gate1_2
1N4937 1N4937 18 9 3 6 2
RA1/AN1 RB3 CLK Q
C LR

+5V
7409 2n3904d/ON
+5V 7474 C13 -15V
1

2 Temp 1 470P
RA2/AN2 16
VR1 OSC1/CLKIN
BD1 5k X1 +5V +15V
+5V +5V +5V +5V +5V 20Mhz
J1
+5V 15
VR3 3 OSC2/CLKOUT R20
1 5k 2 C8 C9 330
+5V 1 R4 22P 22P U6 C16
36k R5 2 PS2501 8 104
C19 C20 C21 C22 C23 C3 6 Gate2_1
104 104 104 104 104 Current Limit 104 4 R11 330 3
MCLR/VPP 13 5
R6 560 RB7 U4B Q1 4 gate2_2
1K C5 R12 330 4 R18 1K
J1 ZD! 104 12 6
2 2 1 RB6 5
TH 1 Temp R13 330 -15V
1N4099 11 7409 2n3904d/ON
R8 D5 RB5
R7 C4 C14
1K 104 2 R14 330 470P
RA3/AN3/VREF 10
10k R9 RB4
J2 1N4937 1k R15 330
6
2 RB0/INT
Output 1 +5V R16 330
LVD 7 3
VR2 RB1 RA4/TOCKI
5k R10
1K 8
GND

RB2

G1 G2 RD1 G3 Y1 RD2
5
1

C6 Cont+ Cont- SD PWR WLD ERR

PC1
105 PC817
C7
2

104

Figure 29. Controller Schematic

© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
Rev. 1.0.0 • 9/9/11 9
AN-9742 APPLICATION NOTE

ICG = dv/ dt × CCG

Q I CG = G CG × dV / dt
Vge = Rg × ICG

Figure 34. Opto-Driver Gate Waveform

Figure 30. Effect on dv/dt to VGE
DC Reactor Design
DC reactor helps stabilize arc current during welding
operation. As DC reactance grows, specter occurs smaller.
On the contrary, if the mobility of arc is lowered and the LDC
value gets too large, it is harder to create an arc. Therefore,
an appropriate reactor choice is necessary. If considering
VOPEN as output no-load voltage, VWEL and IWEL as rated
output voltage or current; the maximum LDC value can be
obtained from the equation:

− R × tR
: LDC ≤
IWEL (13)
Figure 31. Effect on dV/dt to Gate Wave In(1 − × R)
Based on the above considerations, an opto-coupler is used Vopen
for this welding machine evaluation board. Figure 32 and where R is the equivalent resistance of welding load and Tr
Figure 33 present the gate waveforms captured with is the rising time of the output current from 0 to the rated
different types of gate drivers. It is clear the opto-coupler is current. Once the maximum LDC value is obtained; the
the best choice for this welding application. optimum LDC value can be finalized through testing.

Figure 32. HVIC Gate Waveform Figure 35. Soft-Start During Welding Operating

Figure 33. Transformer Gate Waveform

Figure 36. Welding Operating
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
Rev. 1.0.0 • 9/9/11 10
AN-9742 APPLICATION NOTE

Conclusion When to chose an IGBT, its Vce(sat), Eoff turn-off loss, gate
driver resistor, and Icm characteristics are the critical factors
Better performance is expected for a DC-ARC welding that require a designer’s careful attention.
machine when the inverter devices are selected properly
based on the inverter topology and its switching frequency. For the secondary -side rectifier diodes, it is important to
This article presents a power device selection guide for a determine which is the dominant factor, Vf or reverse
half-bridge welding machine application. recovery loss, based on system switching frequency. The
evaluation board uses three ultra-fast diodes
(FFA60UP30DN) in parallel for each tap of the transformer
to lower the Vf and therefore the conduction loss.

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Intel® Corporation.
[2] Bryant, Keith, “Investigating Voids,” Circuits Assembly, June 2004.
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September 2002.
[4] Englemaier, Werner, “Voids in solder joints-reliability,” Global SMT & Package, December 2005.
[5] IPC Solder Products Value Council, “Round Robin Testing and Analysis of Lead Free Solder Pastes with Alloys of
Tin, Silver, and Copper,” 2005.
[6] IPC-A-610-D, “Acceptance of Electronic Assemblies,” February 2005.
[7] IPC J-STD-001D, “Requirements for Soldered Electrical and Electronic Assemblies.”
[8] IPC-SM-7525A, “Stencil Design Guidelines,” May 2000.
[9] JEDEC, JESD22-B102D, “Solderability,” VA, Sept. 2004.
[10] Syed, Ahmer, et al, “Board-Level Assembly and Reliability Considerations for QFN Type Packages,”
Amkor Technology, Inc., Chandler, AZ.

Related Resources
FGH40N60SMD — 600V, 40A Field Stop IGBT
FFA60UP30DN — 300V Ultrafast Recovery Power Rectifier
FSGM0465R — SMPS Power Switch, 4A, 650V (Green)

Appendix — Circuit Diagrams

C23
R6

10
+ BUS 102

Z1
FGH40N60SMD
L5 Z2 C50 D3 FGA60UP30DN
P10 10uF 630V
Gate1 FGA40N60SMD
R1 Gate1
2

1 ZD1 10/3W
R3 10/3W
RV2 BD1 1N4744 R2 ZD6 CT1
20D431K C61
C55 4.7k 1N4744 R4 T1
P3 472M ZD2 4.7k 1 5 D7 FGA60UP30DN
C54 - +
4 1 1N4733 ZD7
1 1uF M275V C1 C2 GND1 1N4733 6
1

RV3 400V 560uF 630V JF3250G L4 52uH

400V 560uF
20D431K 4 8
P11 + Output
LF1R GBP5006 Gate2 Z3 Z4 D16 FGA60UP30DN
C62 FILTER FGA40N60SMD FGA40N60SMD C51 TRANSFORMER CT
3

1 10uF 630V C24

472M RV1 Gate2 R39
20D431K ZD3 R7
R9 10/3W C52
L6 1N4744 4.7k ZD8
1 10 10nF 630V
GND2 1N4744 102
R8 10/3W
FAN ZD4 R5
1N4733 ZD9 4.7k
2 1N4733

- BUS D17 FGA60UP30DN

D18 FGA60UP30DN C53

10nF 630V

D19 FGA60UP30DN
- Output

Figure 37. Main Circuit

© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com

Rev. 1.0.0 • 9/9/11 11
AN-9742 APPLICATION NOTE
R211 10 C209 102

D203 L1 10uH
+15v
T101
EER3940S 9 MBRF10H100
C223 C224
1 470uF 35V 470uF 35V

10 GND1
R212 C210
C208 C211 C222
R207 3.3nF 630V 3 470uF 35V 470uF 35V
10 D204
43K/1W 11 102
D202 L2 10uH
R206 -15V
75K
NTC1 MBRF10H100
AC220V H R208 1N4007

2
R21310 C211102
NTC BD201 7
1k
5D-9 R202
LF201 270K U201 FGM0465R D205 L3 10uH
- +
30mH 4 1 1 15+v
6 Drain
Vstr 8 12 MBRF10H100
TNR C202 R201 C203 C219 C220
10D471k C201 275Vac 100nF 1M/1W 2KBP06M3N25 400V 100uF 470uF 35V 470uF 35V
275Vac 100nF R203

3
150K 4 D201 R210 13
FB GND2
3 C212 102

GND
Vcc R214 10 C217 C218
1W 5 470uF 35V 470uF 35V
UF4004

1
AC220V N 14 D206
R209 L4 10uH

2
PC1 100 ohm/0.5W -15V
F201 250V 2A
2
MBRF10H100

2
R204 C205 ZD201 C207
1N4745A C206 47uF 50V R215 C213
Q201 33nF 100V
100nF

1
C204 R205 1K 2 2N2222
10
47nF 1K 15 D207102 L5
D38
5v
1N4744 4.9uH

1
MBRF10H100 C216
16 C215 1000uF 10V
470uF 10V
XY
gnd

4.7nF/1KV R216
R219
620
8K

1
R217
PC2 817 1.2k

R218 C214

2
18K 47nF

3
R220
U202 1 8K
TL431

2
Figure 38. Auxiliary Power Supply

Figure 39. Controller

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© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com

Rev. 1.0.0 • 9/9/11 12
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