HT7612/HT7612B

General Purpose PIR Controller

Features
· Operating voltage: 2.7V ~ 5.5V · 40 second power-on delay
· Standby current typical: · 10 second high speed warm-up for test mode
HT7612: 17mA · 1~3783 second adjustable PIR turn on time.
HT7612B: 19mA · Output drive for Relay, TRIAC and LED
· CDS input · Output drive buzzer alarm
· CDS debounce time: · Low voltage detector
HT7612: 15~20 seconds · Override function
HT7612B: < 3 seconds
· 16-pin DIP/NSOP packages
· High noise immunity

Applications
· PIR light control · Alarm system
· Motion detectors · Auto door bells

General Description
The HT7612/HT7612B is PIR controller specifically de-
signed to interface to PIR sensors to implement motion
sensing application products such as intruder alarms.
The controller has the features of PIR sensitivity adjust-
ment and a CDS can be connected to the controller for
automatic detection. The HT7612/HT7612B is available
in low profile NSOP & DIP packages.

Block Diagram
V D D V S S

O P 2 O

O P 2 N

A m p lifie r C o m p a ra to r
O P 1 O
C ir c u it C ir c u it

O P 1 N

O P 1 P

L D O & B U Z /L V D
V R E F R e fe r a n c e V o lta g e
B U Z /C D S

T im in g C o n tro l
D T R E L A Y /L E D
D e la y C ir c u it
T R A IC

S y s ta m
T E S T /S C O s c illa to r Z C

M O D E

Rev. 1.50 1 February 21, 2011

 HT7612/HT7612B

Pin Assignment

O P 1 P 1 1 6 T E S T /S C
O P 1 N 2 1 5 Z C
O P 1 O 3 1 4 B U Z /L V D
O P 2 N 4 1 3 B U Z /C D S
O P 2 O 5 1 2 M O D E
V R E F 6 1 1 R E L A Y /L E D
D T 7 1 0 T R IA C
V S S 8 9 V D D

H T 7 6 1 2 /H T 7 6 1 2 B
1 6 D IP -A /N S O P -A

Pin Description
Mask
Pin Name I/O Description
Option
OP1P I PMOS OP1 Non-inverting Input
OP1N I PMOS OP1 Inverting Input
OP1O O CMOS OP1 Output
OP2N I PMOS OP2 Inverting Input
OP2O O CMOS OP2 Output
VREF O NMOS Reference Voltage
Delay time oscillator input. Connected to an external RC to adjust the output dura-
DT I PMOS
tion.
TEST and SC share the same pin.
TEST/SC O CMOS TEST is used to test the 32 Khz system frequency.
SC is used to detect LVD and CDS.
VSS ¾ ¾ Negative power supply, ground

VDD ¾ ¾ Positive power supply

RELAY and LED share the same pin.
RELAY/LED O CMOS
Active high - a RELAY is driven through an external NPN transistor.
BUZ and CDS share the same pin.
The BUZ output can drive a piezo buzzer.
CDS is connected to a CDS voltage divider for daytime/night auto-detection. A low
BUZ/CDS I/O CMOS
input to this pin can disable the PIR input. CDS is connected to the input of a internal
comparator with a debounce time of 15~20 seconds for the HT7612 and less than 3
seconds for the HT7612B.
BUZ and LVD share the same pin.
BUZ/LVD I/O CMOS The BUZ output can drive a piezo buzzer
LVD is used as an input low voltage detector.
ZC I ¾ AC zero crossing detector input.
TRIAC O CMOS TRIAC output drive. The output is a pulse output when active.
Operating mode selection input.
VDD: Output is always ON
MODE I CMOS VSS: Output is always OFF
Open: Auto detection
Test Mode Input.

Rev. 1.50 2 February 21, 2011

 HT7612/HT7612B

Absolute Maximum Ratings

Supply Voltage ...........................VSS-0.3V to VSS+6.0V Storage Temperature ............................-50°C to 125°C
Input Voltage..............................VSS-0.3V to VDD+0.3V Operating Temperature...........................-40°C to 85°C
Zero Crossing Current ................................Max. 300mA

Note: These are stress ratings only. Stresses exceeding the range specified under ²Absolute Maximum Ratings² may
cause substantial damage to the device. Functional operation of this device at other conditions beyond those listed
in the specification is not implied and prolonged exposure to extreme conditions may affect device reliability.

Electrical Characteristics Ta=25°C

Test Conditions
Symbol Parameter Min. Typ. Max. Unit
VDD Conditions
VDD Operating Voltage ¾ ¾ 2.7 4.0 5.5 V
VREF Reference Voltage - see Note 5V Cf=1mF 3.201 3.300 3.399 V
IREF Driving Current 5V ¾ 200 ¾ ¾ mA
HT7612: DT off, OPAMP off,
¾ 17 23 mA
VREF no load
ISTB Standby Current 5V
HT7612B: DT off, OPAMP on,
¾ 19 25 mA
VREF no load
IOH1 TRIAC Source Current 5V VOH=4.5V -20 -40 ¾ mA
IOL1 TRIAC Sink Current 5V VOL=0.5V 20 40 ¾ mA
IOH2 BUZ & BUZ Source Current 5V VOH=4.5V -5 -10 ¾ mA
IOL2 BUZ & BUZ Sink Current 5V VOL=0.5V 10 20 ¾ mA
IOH3 RELAY/LED Source Current 5V VOH=4.5V -5 -10 ¾ mA
IOL3 RELAY/LED Sink Current 5V VOL=0.5V 10 20 ¾ mA
VIH MODE High Input Voltage ¾ ¾ 0.7VDD ¾ ¾ V
VIL MODE Low Input Voltage ¾ ¾ ¾ ¾ 0.3VDD V
VTH1 ZC High Transfer Voltage ¾ ¾ 0.7VDD ¾ ¾ V
VTL1 ZC Low Transfer Voltage ¾ ¾ ¾ ¾ 0.3VDD V
VOS OP Amp Input Offset Voltage 5V CL=10pF ¾ 10 ¾ mV
VLVD Low Voltage Detector Voltage ¾ ¾ 0.99 1.10 1.21 V
fSYS System Oscillator Frequency - IRC 5V ¾ 28.8 32.0 35.2 kHz
VREF, RDT=30kW,
fDT Delay Time Frequency - ERC ¾ 15.2 16.0 16.8 kHz
CDT=3000pF
AVO OP Amp Open Loop Gain 5V RL=510kW to VSS 60 80 ¾ dB
GBW OP Amp Gain Band Bandwidth 5V RL=510kW, CL=100pF 2.5 5.0 ¾ kHz
VH High Level Comparator Window 5V 1/2 VREF + 1/6 VREF 1.98 2.20 2.42 V
VL Low Level Comparator Window 5V 1/2 VREF - 1/6 VREF 0.99 1.10 1.21 V

Note: When VDD is less than 3.4V, then the VREF voltage will be equal to VDD. If the VREF voltage is less than the PIR
working voltage, then the PIR sensor will not work normally.

Rev. 1.50 3 February 21, 2011

 HT7612/HT7612B

Functional Description
The following gives a description of the functional pins RELAY
on the device.
B U Z /L V D

TEST
The TEST pin is an output which is used to test the 32 B U Z /C D S
KHz system frequency. Note that the pin is a shared
Fig.2 Buzzer Pin Drive Buzzer
TEST/SC pin. The TEST output pin can be used within 1
second after power-on.
The RELAY pin is a CMOS output structure which is nor-
SC mally low and active high. The high duration is con-
trolled by the delay time oscillator and the MODE pin.
The SC pin is an output pin which is used to for LVD and
The RELAY pin structure is shown in Fig.3.
CDS detection. Note the pin is a shared TEST/SC pin.
The SC pin can be used 1 second after power-on. V D D
L O A D

DT
A C
The DT pin is a delay time oscillator input pin. It is con-
nected to an external RC to obtain the desired output
turn-on duration. Variable output turn-on durations can R E L A Y /L E D R E L A Y
1 0 k W
be achieved by selecting various values of RC or using 8 0 5 0
a variable resistor. The DT structure is shown in Fig.1.
V R E F
_ Fig.3 RELAY Pin Drive RELAY
+
C o m p S R C L K TRIAC
D T F F I
_
The TRIAC pin is a CMOS output structure which will
+ output a series of pulses when active. The pulse train is
C o m p
synchronised by the ZC (zero crossing) input. The ac-
tive duration is controlled by the delay time oscillator
O s c illa to r
and the MODE pin. The TRIAC structure is shown in
Fig.4.
Fig.1 DT Oscillator Structure
L O A D
BUZ/BUZ
T R IA C
The BUZ & BUZ pins are both CMOS output structures. 6 8 W A C
T R IA C
They will output 4 beep sounds within 1second to indi- 0 .0 4 7 m F
cate that the warm-up time has completed. These differ- 1 0 k W
ential output pins can be used to drive a piezo buzzer.
The BUZ/BUZ structure are shown in Fig.2.
Fig.4 TRIAC Pin Drive TRIAC

Rev. 1.50 4 February 21, 2011

 HT7612/HT7612B

MODE
The MODE pin is a tristate input which is used to select the desired device operating mode.

MODE pin Operating

Description
Status Mode
Output is always ON:
VDD ON RELAY output high for RELAY driving.
TRIAC pulse train output is synchronised by ZC for TRIAC driving.
Output is always OFF:
VSS OFF RELAY output low for RELAY driving.
TRIAC output low for TRIAC driving.
Outputs remain in the OFF state until activated by a valid PIR input trigger signal. When
OPEN AUTO working in the AUTO mode, the devices allows for an override control by switching the ZC
signal.

The device also provides an additional test function on
the MODE pin. If the MODE pin is presented with a high
pulse, of greater than 400ms duration, within 1 second
after power-on, the device will be forced into its test
mode. When the device enters the test mode the
power-on delay time will be changed from its normal op-
erating value of 40 seconds to 10 seconds.
ZC
device is overridden to ON and there is no further
override operations, it will automatically return to the
AUTO mode after 8 hours. It will flash 3 times at a 1Hz
rate when returning to the AUTO mode. But if the
AUTO mode is changed by switching the MODE
switch, it will not flash, as shown in Fig.5.
In Fig.6, an external pull-high resistor is required for nor-
mal applications.
V D D

The ZC pin is a CMOS Schmitt trigger input pin. Using

suitable ZC signal switching, the device can provide the 2 M W
following functions: 1 M W Z C
A C
· Override control
When the device is operating in the AUTO mode,
which is when the MODE pin is open, the output will Fig.6 ZC Application Example
be activated by a valid PIR trigger signal and the out-
put active duration will be controlled by a DT oscillat- Note: Regarding the priority of the MODE pin and the
ing period. The mode can be switched from the AUTO ZC switching, note that when the MODE pin is
mode to the ²ON² mode by either connecting the connected to VDD or VSS, the MODE state will
MODE pin to VDD or switching the ZC signal with an
be determined by the MODE pin.
OFF/ON operation of the power switch. The term
When the MODE pin is OPEN, the MODE state
²override² refers to the change of operating mode by
will be determined by the ZC switching.
switching the power switch. The device can be tog-
gled from ON to AUTO by an override operation. If the

fla s h fla s h

O p e r a tin g
A U T O O N A U T O O N A U T O
M o d e

8 h r < 8 h r

< 3 s e c

Z C

> 3 0 m s A lw a y s h ig h o r a lw a y s L o w

Fig.5 ZC Override Timing

Rev. 1.50 5 February 21, 2011

 HT7612/HT7612B

CDS LED
The CDS pin is connected to an internal comparator input. The LED pin is a CMOS output pin which is used as a
It is used to allow the device to distinguish between day valid trigger indicator. When the TRIAC/RELAY is acti-
and night conditions. When the CDS input voltage is lower vated, this pin will be active until the TRIAC/RELAY has
than VL, the PIR amplifier circuit will be disabled and the is switched OFF. The LED pin structure is shown in
TRIAC and RELAY output pins will be inactive. When the Fig.9.
input voltage of the CDS is higher than VL, the outputs are
both active. The debounce time for the CDS pin for switch- R E L A Y /L E D
ing the outputs from an inactive to an active state is about
15~20 seconds for the HT7612 and less than 3 seconds 1 k W
for the HT7612B. Connect this pin to VDD when this func-
tion is not used. The CDS timing is shown in Fig.7 T r ig g e r
In d ic a to r
CDS Status Output
Low Day Time Disabled Fig. 9 LED Pin Drive LED
High Night Enabled
LVD

C D S LVD is a low voltage detector. When the detected volt-

age is lower than 1.1V, the LED flicker and the buzzer
will emit a tone.

T R IA C & In Fig10, assume RX, RLVD can be adjusted to obtain the

A c tiv e In a c tiv e A c tiv
R E L A Y desired voltage detection level.
Fig.7 CDS Timing
V D D

In Fig.8, RCDS and RY can be adjusted to obtain the de-

R X
sired daytime detection level.
+ B U Z /L V D
V R E F
1 .1 V
-
R L V D

R Y
T E S T /S C
- B U Z /C D S
+
V L Fig.10 LVD Application Example
R C D S

T E S T /S C

Fig.8 CDS Application Example

VREF

VH
VREF
Comp1 VH

OP1 Output
VM OP2 VM

D VL Comp2
S VL
VREF
Regulator
G

PIR
Sensor VH

Comparator
Input

VL

PIR Amplifier

Rev. 1.50 6 February 21, 2011

 HT7612/HT7612B

Effective Trigger Timing

The effective input trigger signal width should be ³ 24ms. The output is valid either with (1) trigger signal width ³ 0.5
seconds or (2) more than 2 effective trigger inputs within 2 seconds (separation of 2 triggers ³ 0.5s). The separation
time between two TRIAC(RELAY) turn-on time must be more than 1 sec. The trigger timing is shown in Fig.11.

Fig.11 Trigger Timing

Retrigger
When the output of the comparator is a valid signal, the RELAY/TRIAC will be activated and the active duration is con-
trolled by the DT oscillating period. If the previous ²Delay Time tD² has not been exceeded and the next valid signal oc-
curs again, the active duration of the RELAY/TRIAC will be restarted. The timing is shown in Fig.12.

Fig.12 Retrigger

Rev. 1.50 7 February 21, 2011

 HT7612/HT7612B

LVD & CDS Detecting Circuit V D D V R E F

The external and internal detecting circuits for LVD and

CDS are shown in Fig.13. When the input voltage VLVD R X R Y

is lower than 1.1V, the comparator outputs a low level B U Z /L V D

which means that VDD is lower than the minimum oper- B U Z /C D S
ating voltage (Vmin). When VCDS is lower than VL, the
comparator outputs a high level which means that it is R L V D R C D S

daytime, otherwise it is night.

T E S T /S C
Where
Fig.13 External Application Circuit
R L V D
V L V D = V D D
R L V D + R X Note: When the CDS input voltage is lower than VL, it
means that a daytime condition exists for the
R C D S PIR circuit.
V C D S = V R E F
R C D S + R Y

Relationship LVD and CDS

The LVD and CDS trigger timing are shown in Fig.14 and Fig.15 respectively. In Fig.14, When an LVD condition occurs,
the LED will flicker and the buzzer will emit a tone. In Fig.15, When the CDS state changes from low to high, the output
of the PIR is enabled after 10 sec for the HT7612 or 0 sec for the HT7612B, and when the CDS sate changes from high
to low, will be disabled.

Fig.14 Trigger Timing of LVD

CDS State
(Internal signal)

10 sec for HT7612

Output 0 sec for HT7612B
+ Trigger
Enable
Level

Comparator
Input

- Trigger
Comparator Level
Output

Fig.15 Trigger Timing of CDS

Rev. 1.50 8 February 21, 2011

 HT7612/HT7612B

Trigger Timing

Note: The output is activated if the trigger signal conforms to the following criteria:
1. Two triggers occur within 2 seconds and separation time between two triggers is more than 0.5sec.
2. The trigger signal sustains duration ³ 0.5 seconds.

Rev. 1.50 9 February 21, 2011

HT7612/HT7612B

February 21, 2011

R10
1M R11 R20
D 1 OP1P
16
S TEST/SC
CDS 2.4M 1M
R1 C1
56K 0.02uF C3 R17 680K
R2 2 15

Change the value of C10 to 0.33mF/600V for AC 220V application.

G OP1N ZC
22K C10
PIR 22uF R7 C6 R16
C2 1M 0.02uF R9
R3 1M 100 /2W 0.68uF/
3 14
OP1O BUZ/LVD 350V
22K W1
22uF
Jumper D2
4 13 Buzzer
OP2N BUZB/CDS AC 110V
R5 C7 ON 1 1N4004
1M 0.02uF C11
D3

10
5 12 2 100uF D4
OP2O MODE AUTO 5V 1N4004
3 LAMP1
OFF

Adjust R6 to obtain the desired output duration.

6 11 R15
Vref RELAY/LED Lamp for TRIAC
1K R18
R6 LED 10K
1M C15
C4 7 10 R19
TD TRIAC
1uF 68
C8 0.1uF Triac
3nF

Adjust R5 to change PIR sensitivity.

8 9
VSS VDD
C12
0.1uF
HT7612/HT7612B

Adjust R9 to fit various CDS.

GND
Application Circuit
AC Power Application

Rev. 1.50
· TRIAC

Note:
HT7612/HT7612B

February 21, 2011

R10
1M R11 R19
D 1 16
S OP1P TEST/SC
CDS 2.4M 1M
R1 C1
56K 0.02uF C3 R17 680K
R2 2 15
G OP1N ZC
22K R16 C10
PIR 22uF R7 C6
C2 1M 0.02uF R9

Change the value of C10 to 0.33mF/600V for AC 220V application.

R3 100 /2W
3 14 1M 0.68uF/
OP1O BUZ/LVD 350V
22K W1
22uF 2 D4
Jumper HT7150-1 Bridge1
4 13 Buzzer 3 2 1 3
OP2N BUZB/CDS OUT IN AC 110V
R5 C7 ON 1 C9 GND
1M 0.02uF 10uF 1 C11 4
D3
5 12 2 AUTO
OP2O MODE 24V
100uF/50V
3

11
OFF
6 11
Vref RELAY/LED

Adjust R6 to obtain the desired output duration.

R6
1M
C4 7 10
TD TRIAC RELAY1
1uF
C8 D2 Relay-SPST
3nF 1N4004
8 9
VSS VDD

Adjust R5 to change PIR sensitivity.

C12
HT7612/HT7612B 0.1uF
R14 Q1
10K 8050
LAMP1

Adjust R9 to fit various CDS.

GND LED
Lamp for RELAY
R15
1K
GND

Rev. 1.50
· RELAY

Note:
HT7612/HT7612B

February 21, 2011

R10
R8 1M
D 1 16 680K
S OP1P TEST/SC
R1 C1 CDS
56K 0.02uF C3 D1 D4
R2 1N5819 L1 10uH
2 15
G OP1N ZC
22K
PIR 22uF R7 C6 C12 C11
C2 1M 0.02uF R9 2.2uF 1 6 22uF
R3 D2 SW VIN
3 14 1M
OP1O BUZ/LVD D3 2
22K W1 5
22uF GND OVP
GND
3 4
Buzzer Jumper FB EN
4 BUZB/CDS
13
OP2N
Rfb HT7939 Rsh
R5 C7 10 100K
1M 0.02uF
5 12
OP2O MODE
GND

12
6 11
Vref RELAY/LED

Adjust R6 to obtain the desired output duration.

R6
1M
C4 7 10
TD TRIAC
1uF
C8
3nF VCC
8 9
VSS VDD

Adjust R5 to change PIR sensitivity.

1 ON
HT7612/HT7612B
2 C9 4.5V
AUTO C10
100uF Battery
0.1uF
3

Adjust R9 to fit various CDS.

4.5V DC Power Application Circuit

OFF
GND

Rev. 1.50
Note:
HT7612/HT7612B

February 21, 2011

R8 R10
680K 1M

Use a Photo-transistor instead of a CDS to meet European RoHS standards.

D 1 16
S OP1P TEST/SC
R1 C1
56K 0.02uF C3 D1 D4
R2 Photo-transistor 1N5819 L1 10uH
2
G OP1N ZC
22K 15
PIR 22uF R7 C6 C12 C11
C2 1M 0.02uF R9 2.2uF 1 6 22uF
R3 D2 SW VIN
3 14 1M
OP1O BUZ/LVD D3 2
22K W1 5
22uF GND OVP
GND
3 4
Buzzer Jumper FB EN
4 BUZB/CDS 13
OP2N
Rfb HT7939 Rsh
R5 C7 10 100K
1M 0.02uF
5 12
OP2O MODE
GND

13
6 11
Vref RELAY/LED

Adjust R6 to obtain the desired output duration.

R6
1M
C4 7 10
TD TRIAC
1uF
C8
3nF VCC
8 VDD 9
VSS

Adjust R5 to change PIR sensitivity.

1 ON
HT7612/HT7612B
2 C9 4.5V
AUTO C10
100uF Battery
Photo-transistor Application Circuit

0.1uF
3

Adjust R9 to fit various CDS.

OFF
GND

Rev. 1.50
Note:
 HT7612/HT7612B

Package Information
16-pin DIP (300mil) Outline Dimensions

A A

1 6 9 1 6 9
B B
1 8 1 8

H H

C C

D D

E G I E G I
F F

Fig1. Full Lead Packages Fig2. 1/2 Lead Packages

· MS-001d (see fig1)

Dimensions in inch
Symbol
Min.
A 0.780
B 0.240
C 0.115
D 0.115
E 0.014
F 0.045
G ¾
H 0.300
I ¾
Nom. Max.
¾ 0.880
¾ 0.280
¾ 0.195
¾ 0.150
¾ 0.022
¾ 0.070
0.100 ¾
¾ 0.325
¾ 0.430

Dimensions in mm
Symbol
Min.
A 19.81
B 6.10
C 2.92
D 2.92
E 0.36
F 1.14
G ¾
H 7.62
I ¾
Nom. Max.
¾ 22.35
¾ 7.11
¾ 4.95
¾ 3.81
¾ 0.56
¾ 1.78
2.54 ¾
¾ 8.26
¾ 10.92

Rev. 1.50 14 February 21, 2011

 HT7612/HT7612B

· MS-001d (see fig2)

Dimensions in inch
Symbol
Min. Nom. Max.
A 0.735 ¾ 0.775
B 0.240 ¾ 0.280
C 0.115 ¾ 0.195
D 0.115 ¾ 0.150
E 0.014 ¾ 0.022
F 0.045 ¾ 0.070
G ¾ 0.100 ¾
H 0.300 ¾ 0.325
I ¾ ¾ 0.430

Dimensions in mm
Symbol
Min. Nom. Max.
A 18.67 ¾ 19.69
B 6.10 ¾ 7.11
C 2.92 ¾ 4.95
D 2.92 ¾ 3.81
E 0.36 ¾ 0.56
F 1.14 ¾ 1.78
G ¾ 2.54 ¾
H 7.62 ¾ 8.26
I ¾ ¾ 10.92

Rev. 1.50 15 February 21, 2011

 HT7612/HT7612B

· MO-095a (see fig2)

Dimensions in inch
Symbol
Min. Nom. Max.
A 0.745 ¾ 0.785
B 0.275 ¾ 0.295
C 0.120 ¾ 0.150
D 0.110 ¾ 0.150
E 0.014 ¾ 0.022
F 0.045 ¾ 0.060
G ¾ 0.100 ¾
H 0.300 ¾ 0.325
I ¾ ¾ 0.430

Dimensions in mm
Symbol
Min. Nom. Max.
A 18.92 ¾ 19.94
B 6.99 ¾ 7.49
C 3.05 ¾ 3.81
D 2.79 ¾ 3.81
E 0.36 ¾ 0.56
F 1.14 ¾ 1.52
G ¾ 2.54 ¾
H 7.62 ¾ 8.26
I ¾ ¾ 10.92

Rev. 1.50 16 February 21, 2011

 HT7612/HT7612B

16-pin NSOP (150mil) Outline Dimensions

1 6 9
A B
1 8

C '
G
D H

E F a

· MS-012

Dimensions in inch
Symbol
Min. Nom. Max.
A 0.228 ¾ 0.244
B 0.150 ¾ 0.157
C 0.012 ¾ 0.020
C¢ 0.386 ¾ 0.402
D ¾ ¾ 0.069
E ¾ 0.050 ¾
F 0.004 ¾ 0.010
G 0.016 ¾ 0.050
H 0.007 ¾ 0.010
a 0° ¾ 8°

Dimensions in mm
Symbol
Min. Nom. Max.
A 5.79 ¾ 6.20
B 3.81 ¾ 3.99
C 0.30 ¾ 0.51
C¢ 9.80 ¾ 10.21
D ¾ ¾ 1.75
E ¾ 1.27 ¾
F 0.10 ¾ 0.25
G 0.41 ¾ 1.27
H 0.18 ¾ 0.25
a 0° ¾ 8°

Rev. 1.50 17 February 21, 2011

 HT7612/HT7612B

Product Tape and Reel Specifications

Reel Dimensions

D
T 2

A B C

T 1

SOP 16N (150mil)

Symbol Description Dimensions in mm
A Reel Outer Diameter 330.0±1.0
B Reel Inner Diameter 100.0±1.5
+0.5/-0.2
C Spindle Hole Diameter 13.0

D Key Slit Width 2.0±0.5

+0.3/-0.2
T1 Space Between Flange 16.8

T2 Reel Thickness 22.2±0.2

Rev. 1.50 18 February 21, 2011

 HT7612/HT7612B

Carrier Tape Dimensions

P 0 P 1
D t

F
W
B 0
C

D 1 P
K 0
A 0

R e e l H o le

IC p a c k a g e p in 1 a n d th e r e e l h o le s
a r e lo c a te d o n th e s a m e s id e .

SOP 16N (150mil)

Symbol Description Dimensions in mm

W Carrier Tape Width 16.0±0.3
P Cavity Pitch 8.0±0.1
E Perforation Position 1.75±0.1
F Cavity to Perforation (Width Direction) 7.5±0.1
+0.10/-0.00
D Perforation Diameter 1.55
+0.25/-0.00
D1 Cavity Hole Diameter 1.50
P0 Perforation Pitch 4.0±0.1
P1 Cavity to Perforation (Length Direction) 2.0±0.1
A0 Cavity Length 6.5±0.1
B0 Cavity Width 10.3±0.1
K0 Cavity Depth 2.1±0.1
t Carrier Tape Thickness 0.30±0.05
C Cover Tape Width 13.3±0.1

Rev. 1.50 19 February 21, 2011

 HT7612/HT7612B

Holtek Semiconductor Inc. (Headquarters)

No.3, Creation Rd. II, Science Park, Hsinchu, Taiwan
Tel: 886-3-563-1999
Fax: 886-3-563-1189
http://www.holtek.com.tw

Holtek Semiconductor Inc. (Taipei Sales Office)

4F-2, No. 3-2, YuanQu St., Nankang Software Park, Taipei 115, Taiwan
Tel: 886-2-2655-7070
Fax: 886-2-2655-7373
Fax: 886-2-2655-7383 (International sales hotline)

Holtek Semiconductor Inc. (Shenzhen Sales Office)

5F, Unit A, Productivity Building, No.5 Gaoxin M 2nd Road, Nanshan District, Shenzhen, China 518057
Tel: 86-755-8616-9908, 86-755-8616-9308
Fax: 86-755-8616-9722

Holtek Semiconductor (USA), Inc. (North America Sales Office)

46729 Fremont Blvd., Fremont, CA 94538
Tel: 1-510-252-9880
Fax: 1-510-252-9885
http://www.holtek.com

Copyright Ó 2011 by HOLTEK SEMICONDUCTOR INC.

The information appearing in this Data Sheet is believed to be accurate at the time of publication. However, Holtek as-
sumes no responsibility arising from the use of the specifications described. The applications mentioned herein are used
solely for the purpose of illustration and Holtek makes no warranty or representation that such applications will be suitable
without further modification, nor recommends the use of its products for application that may present a risk to human life
due to malfunction or otherwise. Holtek¢s products are not authorized for use as critical components in life support devices
or systems. Holtek reserves the right to alter its products without prior notification. For the most up-to-date information,
please visit our web site at http://www.holtek.com.tw.

Rev. 1.50 20 February 21, 2011