MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR30AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

BCR30AM OUTLINE DRAWING Dimensions

in mm

15.9 MAX 4.5±0.3

1.5±0.2
4

5.0
φ3.2±0.2

20.0±0.5
TYPE
NAME ∗
VOLTAGE
CLASS

2
4
2±0.3

19.5 MIN
1.0±0.2
1 2 3
0.6±0.2 2.8±0.3
5.45 5.45

∗ Measurement point of
case temperature
4
24
1 T1 TERMINAL
• IT (RMS) ...................................................................... 30A 2 T2 TERMINAL

• VDRM ..............................................................400V/600V 3 3 GATE TERMINAL

1 4 T2 TERMINAL
• IFGT !, IRGT !, IRGT # ........................................... 50mA TO-3P

APPLICATION
Contactless AC switches, light dimmer,
on/off and speed control of small induction motors, on/off control of copier lamps,
microwave ovens

MAXIMUM RATINGS
Voltage class
Symbol Parameter Unit
8 12
VDRM Repetitive peak off-state voltage ✽1 400 600 V
VDSM Non-repetitive peak off-state voltage ✽1 500 720 V

Symbol Parameter Conditions Ratings Unit

IT (RMS) RMS on-state current Commercial frequency, sine full wave 360° conduction, Tc =75°C 30 A
ITSM Surge on-state current 60Hz sinewave 1 full cycle, peak value, non-repetitive 300 A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
I2t I2t for fusing 378 A2s
current

PGM Peak gate power dissipation 5 W

PG (AV) Average gate power dissipation 0.5 W
VGM Peak gate voltage 10 V
IGM Peak gate current 2 A
Tj Junction temperature –40 ~ +125 °C
Tstg Storage temperature –40 ~ +125 °C
— Weight Typical value 4.8 g
✽1. Gate open.

Feb.1999
 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR30AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

ELECTRICAL CHARACTERISTICS
Limits
Symbol Parameter Test conditions Unit
Min. Typ. Max.
IDRM Repetitive peak off-state current Tj=125°C, V DRM applied — — 3.0 mA
VTM On-state voltage Tc=25°C, ITM=45A, Instantaneous measurement — — 1.6 V
VFGT ! ! — — 2.5 V
VRGT ! Gate trigger voltage ✽2 @ Tj=25°C, VD =6V, RL=6Ω, RG=330Ω — — 2.5 V
VRGT # # — — 2.5 V
IFGT ! ! — — 50 mA
IRGT ! Gate trigger current ✽2 @ Tj=25°C, VD =6V, RL=6Ω, RG=330Ω — — 50 mA
IRGT # # — — 50 mA
VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM 0.2 — — V
R th (j-c) Thermal resistance Junction to case ✽4 — — 1.2 °C/ W

Critical-rate of rise of off-state

(dv/dt) c ✽3 — — V/µs
commutating voltage

✽2. Measurement using the gate trigger characteristics measurement circuit.

✽3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
✽4. The contact thermal resistance R th (b-f) in case of greasing is 0.3°C/W.

Voltage VDRM (dv/dt) c Commutating voltage and current waveforms

class (V) Test conditions (inductive load)
Symbol Min. Unit

R —
SUPPLY
1. Junction temperature VOLTAGE TIME
8 400 Tj =125°C
L 20
2. Rate of decay of on-state commutat- MAIN CURRENT (di/dt)c
V/µs ing current TIME
(di/dt)c=–16A/ms
R — MAIN
3. Peak off-state voltage VOLTAGE TIME
12 600
VD =400V (dv/dt)c VD
L 20

PERFORMANCE CURVES

MAXIMUM ON-STATE CHARACTERISTICS RATED SURGE ON-STATE CURRENT

103 500
7 TC = 25°C
SURGE ON-STATE CURRENT (A)

5
ON-STATE CURRENT (A)

3 400
2
102
7 300
5
3
2
200
101
7
5
100
3
2
100 0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 100 2 3 4 5 7 101 2 3 4 5 7 102

ON-STATE VOLTAGE (V) CONDUCTION TIME

(CYCLES AT 60Hz)

Feb.1999
 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR30AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

GATE TRIGGER CURRENT VS.

GATE CHARACTERISTICS JUNCTION TEMPERATURE

100 (%)
102 103
7 7 TYPICAL EXAMPLE
5
5
3 4
2 VGM = 10V IRGT I, IRGT III
GATE VOLTAGE (V)

GATE TRIGGER CURRENT (Tj = 25°C)

3

GATE TRIGGER CURRENT (Tj = t°C)

101 2
7 PG(AV) = PGM = 5W
5 VGT = 2.5V 0.5W IFGT I
3 102
2 IGM = 2A 7
100 5
7 4
5 3
3 2
2
IFGT I, IRGT I, IRGT III VGD = 0.2V
10–1 101
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 –60 –40 –20 0 20 40 60 80 100 120 140

GATE CURRENT (mA) JUNCTION TEMPERATURE (°C)

MAXIMUM TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS
GATE TRIGGER VOLTAGE VS. (JUNCTION TO CASE)
JUNCTION TEMPERATURE
102 2 3 5 7 103
100 (%)

TRANSIENT THERMAL IMPEDANCE (°C/W)

103 2.0
7 TYPICAL EXAMPLE
1.8
5
4 1.6
GATE TRIGGER VOLTAGE (Tj = 25°C)

3
GATE TRIGGER VOLTAGE (Tj = t°C)

1.4
2
1.2
102 1.0
7 0.8
5
4 0.6
3
0.4
2
0.2
101 0
–60 –40 –20 0 20 40 60 80 100 120 140 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102

JUNCTION TEMPERATURE (°C) CONDUCTION TIME

(CYCLES AT 60Hz)

MAXIMUM ON-STATE POWER ALLOWABLE CASE TEMPERATURE

DISSIPATION VS. RMS ON-STATE CURRENT
50 160
ON-STATE POWER DISSIPATION (W)

CURVES APPLY REGARDLESS

140 OF CONDUCTION ANGLE
CASE TEMPERATURE (°C)

40
360° 120
CONDUCTION
30 RESISTIVE, 100
INDUCTIVE
LOADS 80
20 60

40
10 RESISTIVE,
20 INDUCTIVE
LOADS
0 0
0 10 20 30 40 50 0 10 20 30 40

RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A)

Feb.1999
 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR30AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

REPETITIVE PEAK OFF-STATE

100 (%)
ALLOWABLE AMBIENT TEMPERATURE CURRENT VS. JUNCTION
VS. RMS ON-STATE CURRENT TEMPERATURE
160 105
ALL FINS ARE BLACK PAINTED 7 TYPICAL EXAMPLE

REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C)

5
AMBIENT TEMPERATURE (°C)

140 ALUMINUM AND GREASED

REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C)

NATURAL CONVECTION 3
120 2
160 160 t2.3
104
100 120 120 t2.3 7
100 100 t2.3 5
80 3
CURVES APPLY 2
60 REGARDLESS OF
CONDUCTION ANGLE 103
7
40 5
3
20 2
0 102
0 10 20 30 40 –60 –40 –20 0 20 40 60 80 100 120 140

RMS ON-STATE CURRENT (A) JUNCTION TEMPERATURE (°C)

HOLDING CURRENT VS. BREAKOVER VOLTAGE VS.

JUNCTION TEMPERATURE JUNCTION TEMPERATURE
103 160
100 (%)
100 (%)

7 TYPICAL EXAMPLE TYPICAL EXAMPLE

5 140
4
3 120
BREAKOVER VOLTAGE (Tj = 25°C)
HOLDING CURRENT (Tj = 25°C)

BREAKOVER VOLTAGE (Tj = t°C)

HOLDING CURRENT (Tj = t°C)

2 100

102 80
7
5 60
4
3 40
2 20

101 0
–60–40 –20 0 20 40 60 80 100 120 140 –60 –40 –20 0 20 40 60 80 100 120 140

JUNCTION TEMPERATURE (°C) JUNCTION TEMPERATURE (°C)

BREAKOVER VOLTAGE VS.

RATE OF RISE OF
OFF-STATE VOLTAGE COMMUTATION CHARACTERISTICS
100 (%)

CRITICAL RATE OF RISE OF OFF-STATE

160 102
TYPICAL EXAMPLE TYPICAL
COMMUTATING VOLTAGE (V/µs)

7 MINIMUM EXAMPLE
140 Tj = 125°C
5 CHARAC- TC = 125°C
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
BREAKOVER VOLTAGE (dv/dt = xV/µs )

4 TERISTICS
120 3 IT = 4A
VALUE τ = 500µs
100 2 VD = 200V
f = 3Hz
80 101
I QUADRANT 7
60 5
4
40 III QUADRANT
3
I QUADRANT
20 2
III QUADRANT
0 100 1
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 10 2 3 4 5 7 102 2 3 4 5 7 103

RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) RATE OF DECAY OF ON-STATE

COMMUTATING CURRENT (A /ms)

Feb.1999
 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR30AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

GATE TRIGGER CURRENT VS. GATE TRIGGER CHARACTERISTICS TEST CIRCUITS

GATE CURRENT PULSE WIDTH
103 6Ω 6Ω
100 (%)

TYPICAL EXAMPLE
7
5 IFGT I
4 IRGT III
6V A 6V A
3
GATE TRIGGER CURRENT (DC)

IRGT I
GATE TRIGGER CURRENT (tw)

V RG V RG
2

102 TEST PROCEDURE 1 TEST PROCEDURE 2

7
5 6Ω
4
3
2
A
6V
101 0 V RG
10 2 3 4 5 7 101 2 3 4 5 7 102

GATE CURRENT PULSE WIDTH (µs) TEST PROCEDURE 3

Feb.1999
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