MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉

CR3CM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE

CR3CM OUTLINE DRAWING Dimensions

in mm
10 MAX 0.5

3.2±0.2
φ3.2±0.1
TYPE NAME @

23.7±0.5
VOLTAGE
CLASS ∗

8 MAX
1.2±0.1
0.8

4 MAX
12 MIN
0.8

0.5
1.5 MIN
2.5 2.5

4.5 MAX
123 ∗ Measurement point of
case temperature

1.55±0.1
10 MAX 24
1 CATHODE
2 ANODE
• IT (AV) ........................................................................... 3A 3 3 GATE
• VDRM ..............................................................400V/600V 1 4 ANODE

• IGT ......................................................................... 200µA TO-202

APPLICATION
TV sets, strobe flasher, ignitors, gas ignitor, static switch, other general purpose control applications

MAXIMUM RATINGS
Voltage class ✽1
Symbol Parameter Unit
8 12
VRRM Repetitive peak reverse voltage 400 600 V
VRSM Non-repetitive peak reverse voltage 500 720 V
VR (DC) DC reverse voltage 320 480 V
VDRM Repetitive peak off-state voltage 400 600 V
VD (DC) DC off-state voltage 320 480 V

Symbol Parameter Conditions Ratings Unit

IT (RMS) RMS on-state current 4.7 A
IT (AV) Average on-state current Commercial frequency, sine half wave, 180° conduction, Tc =50°C 3.0 A
ITSM Surge on-state current 60Hz sine half wave 1 full cycle, peak value, non-repetitive 90 A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
I2t I2t for fusing 33 A2s
current
PGM Peak gate power dissipation 0.5 W
PG (AV) Average gate power dissipation 0.1 W
VFGM Peak gate forward voltage 6 V
VRGM Peak gate reverse voltage 6 V
IFGM Peak gate forward current 0.3 A
Tj Junction temperature –40 ~ +110 °C
Tstg Storage temperature –40 ~ +125 °C
— Weight Typical value 1.6 g
✽1. With Gate-to-cathode resistance RGK =1kΩ.

Feb.1999
 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉

CR3CM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE

ELECTRICAL CHARACTERISTICS
Limits
Symbol Parameter Test conditions Unit
Min. Typ. Max.
IRRM Repetitive peak reverse current Tj=110°C, V RRM applied — — 1.0 mA
IDRM Repetitive peak off-state current Tj=110°C, V DRM applied, RGK=1kΩ — — 1.0 mA
VTM On-state voltage Tc=25°C, ITM=10A, Instantaneous value — — 1.6 V
VGT Gate trigger voltage Tj=25°C, VD=6V, IT=0.1A — — 0.8 V
VGD Gate non-trigger voltage Tj=110°C, VD=1/2VDRM, RGK=1kΩ 0.1 — — V
IGT Gate trigger current Tj=25°C, VD=6V, IT=0.1A 1 — 200 ✽3 µA
R th (j-c) Thermal resistance Junction to case ✽2 — — 10 °C/W
✽2. The method point for case temperature is at anode tab 1.5mm away from the molded case.
✽3. If special values of I GT are required, choose at least two items from those listed in the table below. (Example: AB, B~D)
Item A B C D
IGT (µA) 1 ~ 30 20 ~ 50 40 ~ 100 80 ~ 200
The above values do not include the current flowing through the 1kΩ resistance between the gate and cathode.

PERFORMANCE CURVES

MAXIMUM ON-STATE CHARACTERISTICS RATED SURGE ON-STATE CURRENT

102 100
7 Tc = 25°C
SURGE ON-STATE CURRENT (A)

5 90
ON-STATE CURRENT (A)

3 80
2
70
101
7 60
5
3 50
2
40
100
7 30
5
20
3
2 10
10–1 0
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 100 2 3 4 5 7 101 2 3 4 5 7 102

ON-STATE VOLTAGE (V) CONDUCTION TIME

(CYCLES AT 60Hz)

Feb.1999
 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉

CR3CM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE

GATE TRIGGER CURRENT VS.

GATE CHARACTERISTICS JUNCTION TEMPERATURE
102 103

100 (%)
7 7 TYPICAL EXAMPLE
5 5 IGT (DC)
3 #1
3 #1 6µA
2 2
GATE VOLTAGE (V)

VFGM = 6V PGM = 0.5W # 2 67µA

GATE TRIGGER CURRENT (Tj=25°C)

101

GATE TRIGGER CURRENT (Tj=t°C)

7 102
5 7 #2
3 5
PG(AV) = 0.1W
2 3
VGT = 0.8V 2
100
7 101
5 IGT = 200µA 7
3 (Tj = 25°C) 5
2 IFGM = 0.3A 3
10–1 2
7 VGD = 0.1V
5 100
10–1 2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 –60 –40 –20 0 20 40 60 80 100 120 140

GATE CURRENT (mA) JUNCTION TEMPERATURE (°C)

MAXIMUM TRANSIENT THERMAL

GATE TRIGGER VOLTAGE VS. IMPEDANCE CHARACTERISTICS
JUNCTION TEMPERATURE
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
TRANSIENT THERMAL IMPEDANCE (°C/W)

1.0

,,,,,,,,,,,,, 3 JUNCTION TO AMBIENT

,,,,,,,,,,,,,
0.9 2
GATE TRIGGER VOLTAGE (V)

DISTRIBUTION

,,,,,,,,,,,,,
0.8 102
7

,,,,,,,,,,,,,
0.7

,,,,,,,,,,,,,
0.6
TYPICAL EXAMPLE 5
3

,,,,,,,,,,,,,
2

,,,,,,,,,,,,,
0.5
101

,,,,,,,,,,,,,
0.4 7
5

,,,,,,,,,,,,,
0.3

,,,,,,,,,,,,,
0.2
3
2
JUNCTION TO CASE

,,,,,,,,,,,,,
0.1
0
100
7
5
–40 –20 0 20 40 60 80 100 120 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100

JUNCTION TEMPERATURE (°C) TIME (s)

ALLOWABLE CASE TEMPERATURE VS.

MAXIMUM AVERAGE POWER DISSIPATION AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE) (SINGLE-PHASE HALF WAVE)
8 160
AVERAGE POWER DISSIPATION (W)

7 140
θ
CASE TEMPERATURE (°C)

6 120 360°
180°
120° RESISTIVE,
5 90° 100
INDUCTIVE
60°
4 θ = 30° 80
LOADS

3 θ 60

2 360° 40
RESISTIVE, θ = 30° 90° 180°
1 INDUCTIVE 20
60° 120°
LOADS
0 0
0 1.0 2.0 3.0 4.0 5.0 0 1.0 2.0 3.0 4.0 5.0

AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A)

Feb.1999
 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉

CR3CM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE

ALLOWABLE AMBIENT TEMPERATURE VS. ALLOWABLE AMBIENT TEMPERATURE VS.

AVERAGE ON-STATE CURRENT AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE) (SINGLE-PHASE HALF WAVE)
160 160
WITHOUT FIN 50 50 t1.2
140 ALL FINS ARE
AMBIENT TEMPERATURE (°C)

AMBIENT TEMPERATURE (°C)

140 θ θ
BLACK PAINTED
120 360° 120 IRON AND GREASED 360°
RESISTIVE, RESISTIVE,
100 INDUCTIVE 100 INDUCTIVE
θ = 30° LOADS LOADS
80 80 θ = 30°
60° NATURAL 60°
NATURAL
60 90° CONVECTION 60 90°
CONVECTION
120° 120°
40 180° 40 180°
20 20

0 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1.0 2.0 3.0 4.0 5.0

AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A)

ALLOWABLE CASE TEMPERATURE VS.

MAXIMUM AVERAGE POWER DISSIPATION AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE) (SINGLE-PHASE FULL WAVE)
8 160
AVERAGE POWER DISSIPATION (W)

180°
7 140
θ θ 120° θ θ
CASE TEMPERATURE (°C)

6 360° 90° 120 360°

RESISTIVE RESISTIVE LOADS
5 LOADS 60° 100
θ = 30°
4 80

3 60

2 40

1 20 θ = 30° 60° 90° 120° 180°

0 0
0 1.0 2.0 3.0 4.0 5.0 0 1.0 2.0 3.0 4.0 5.0

AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A)

ALLOWABLE AMBIENT TEMPERATURE VS. ALLOWABLE AMBIENT TEMPERATURE VS.

AVERAGE ON-STATE CURRENT AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE) (SINGLE-PHASE FULL WAVE)
160 160
WITHOUT FIN 50 50 t1.2
140 ALL FINS ARE
AMBIENT TEMPERATURE (°C)

AMBIENT TEMPERATURE (°C)

140 RESISTIVE LOADS θ θ BLACK PAINTED θ θ

NATURAL
120 360° 120 IRON AND GREASED 360°
CONVECTION
RESISTIVE
100 100
θ = 30° θ = 30° LOADS
80 60° 80 60° NATURAL
90° 90° CONVECTION
60 120° 60 120°
180° 180°
40 40

20 20

0 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1.0 2.0 3.0 4.0 5.0

AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A)

Feb.1999
 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉

CR3CM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE

BREAKOVER VOLTAGE VS. BREAKOVER VOLTAGE VS.

JUNCTION TEMPERATURE GATE TO CATHODE RESISTANCE

100 (%)
160 120
100 (%)

TYPICAL EXAMPLE TYPICAL EXAMPLE

140 Tj = 110°C
100

BREAKOVER VOLTAGE (dv/dt = 1V/µs )

BREAKOVER VOLTAGE (dv/dt = vV/µs )
120
BREAKOVER VOLTAGE (T j = 25°C)
BREAKOVER VOLTAGE (T j = t°C)

80
100
RGK = 1kΩ
80 60

60
40
40
20
20

0 0
–40 –20 0 20 40 60 80 100 120 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102

JUNCTION TEMPERATURE (°C) RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)

BREAKOVER VOLTAGE VS. HOLDING CURRENT VS.

RATE OF RISE OF OFF-STATE VOLTAGE JUNCTION TEMPERATURE
100 (%)

200 102
TYPICAL EXAMPLE 7 VD = 12V
180 5 RGK = 1kΩ
RGK = 1kΩ
HOLDING CURRENT (mA)

3
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
BREAKOVER VOLTAGE (dv/dt = vV/µs )

160
2
140
101
120 7 DISTRIBUTION

,,,,,,,,,,,,
5
100 TYPICAL EXAMPLE

,,,,,,,,,,,,
3
Tj = 25°C 2 IGT (25°C) = 35µA

,,,,,,,,,,,,
80
100
60
40
Tj = 110°C
7
5 ,,,,,,,,,,,,
,,,,,,,,,,,,
,,,,,,,,,,,,
3
20 2
0 10–1
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 –60 –40 –20 0 20 40 60 80 100 120 140

RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) JUNCTION TEMPERATURE (°C)

HOLDING CURRENT VS. REPETITIVE PEAK REVERSE VOLTAGE VS.

100 (%)

GATE TO CATHODE RESISTANCE JUNCTION TEMPERATURE

500 160
100 (%)

TYPICAL EXAMPLE
IGT (25°C) IH (1kΩ) 140
REPETITIVE PEAK REVERSE VOLTAGE (Tj = 25°C)
REPETITIVE PEAK REVERSE VOLTAGE (Tj = t°C)

400 # 1 21µA 0.9mA

# 2 59µA 1.4mA 120
HOLDING CURRENT (RGK = 1kΩ)
HOLDING CURRENT (RGK = rkΩ)

300 100

#1 80
#2
200 60

40
100
20
Tj = 25°C
0 0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 –40 –20 0 20 40 60 80 100 120

GATE TO CATHODE RESISTANCE (kΩ) JUNCTION TEMPERATURE (°C)

Feb.1999
 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉

CR3CM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE

GATE TRIGGER CURRENT VS.

GATE CURRENT PULSE WIDTH
104
100 (%)

7 TYPICAL EXAMPLE
5 IGT (DC)
3 #1 6µA
2 #1
# 2 67µA
GATE TRIGGER CURRENT (DC)
GATE TRIGGER CURRENT (tw)

103 #2
7
5
3
2
102
7
5
VD = 6V
3
2 RL = 60Ω
Tj = 25°C
101
100 2 3 4 5 7 101 2 3 4 5 7 102

GATE CURRENT PULSE WIDTH (µs)

Feb.1999