‘ BIRLA INSTITUTE OF TECHNOLOGY AND SCIENCE, PILANI K.K BIRLA GOA CAMPUS FIRST SEMESTER (2011-12) TEST -1 IC Fabrication Technology (MEL G611) 8-09-2011 Time : 60 min Maximum Marks: 40 Closed Book Instructions: (i) Answer All questions. (ii) Any required data not explicitly given, may be suitably assumed and stated. QI Classify the different defects in a real crystals and explain each. (41 Q2. A Phosphorous doped crystal is measured at its seed end with a four-point probe of spacing 1.5 mm. The current entering into the outer probes is | mA and the voltage measured across the inner probes is 10mV. What is the resistivity of the material? If the spacing is decreased to Imm, what is the effect on V/1 and resistivity? [4] 3. Draw the wafer diagram to show (i) {111} n-type (ii) {111} p-type (iii) {100} n-type and {100} p-type. 4] Q4. What is homoepitaxy and heteroepitaxy? Give one example each, (4) QS. Give two fundamental advantages of epitaxial layers over bulk wafers. 2 Q6. What is doping and autodoping? 1 Q7. Explain Silicon oxidation model with theory. (6) Q8. Mention and compare different optical printing techniques. (41 Q9. Explain proximity effect with reference e-beam lithography. 2 Q10.What is a photoresist? Compare different types. i) QI1. What is phase-shift technology? Mention the advantages. ; 4)BIRLA INSTITUTE OF TECHNOLOGY AND SCIENCE PILANI K.K BIRLA GOA CAMPUS: FIRST SEMESTER (2011-12) TEST -2 IC Fabrication Technology (MEL G611) Date : 23-10-2011 Time : 60 min Maximum Marks: 40 Open Book i) Answer All questions. (ii) Any required data not explicitly given, may be suitably assumed and stated, QI. Isetch rate is dependent on orientation of Silcon atoms in a crystal? Justify your answer. [2] Q2. Compare lift-off and etching process. Pl Q3. At 300°C the diffusion coefficient and activation energy for Cu in Si are 7.8 x 10"! m?/s and 41500 J/mol respectively. What is the diffusion coefficient at 350°C? (4] Q4. For a Boron diffusion in silion at 1100 °C, the surface concentration is maintained at 10'* cm® and the diffusion time is 1 hour. Find Qr and the gradient at (de/dx) at x=0 and at a location where the dopant concentration reaches 10'° cm™. Assume the diffusion coefficient of Boron at 1100 °C is 2x 104 em’/s. 8] Q5. Consider SiO2 deposited by reacting silane and oxygen at 450 °C. The deposition rate is 12nm/min and activation energy is 0.45 eV. How much must the temperature be increased to double the rate? Repeat the calculation for a TEOS deposition at 650 °C and activation energy of 1.95 eV. [8] Q6. Sketch the step coverage expected for a conformal coating over a window | jm deep and 2 um wide. Use film thickness of 0.5, 1.0, 1.5, and 2.0 um. Repeat the calculation for a deposition with no surface migration, such as plasma oxide. [8] Q7. Assume the measured phosphorus profile can be represented by a Gaussian function with diffusivity D= 2.4 x 107° cm/s. The measured surface concentration is 2 x10'* atoms/cm? and the measured junction depth is 1 micron at a substrate concentration of 2 x10'* atoms/cm’, a) Calculate the diffusion time and total dopant in the diffused layer. ‘ b) If the diffusivity is 1.410" cm’/s, what is the calculated junction depth? [8] ##99*BEST OF LUCK**** Error function Algebra le forx >>1 erf (x)= x ler dy erfe(a) — erfe(x) =1—erf(x) orf) = erf (0) =0 2 ae qt = =x f 1 “ erf (x) — or X << 1Qt. Q2. Q3. Q4 Qs. Q6. 6. Q7. a8. Qs. BIRLA INSTITUTE OF TECHNOLOGY AND SCIENCE PILANI K.K BIRLA GOA CAMPUS FIRST SEMESTER (2011-12) Comprehensive Examinations IC Fabrication Technology (MEL G611) Date : 07-12-2011 Time : 1 hour Maximum Marks: 25 Closed Book PART-A i) Answer All questions. (ii) Any required data not explicitly given, may be suitably assumed and stated. Oxidation is used for...............+ (a) Isolation (b) interconnection (c) doping (d) none of these (1 Etching is used for .... (a) Selective removal of the unwanted surface _(b) cleaning (c) interconnection (d) none of these (] Now a days the material used for the gate in MOSFET’s is .... {a) Epitaxial grown silicon (b)High purity silica gel (c) Pure silicon (d) Heavily doped polycrystalline silicon 0) Ultrasonic waves are used to detect ... ... in crystals. (a) doping level (b) defects like cracks (c) resistivity (d) none of these (1 The equilibrium density of vacancy ns is given by N exp(-Es/kT), where N is the density of semiconductor atoms and Es is the energy of formation. Calculate ns in silicon at 27 °C, 900 °C, and 1200 °C. Assume Es=2.3 eV [2] Assume the energy of formation (E;) of Frenkel-type defect to be 1.1 eV and estimate the defect density at 27 °C and 900 °C. The equilibrium density of Frenke!- type defects is given by n,=VNN e’’ where N is the atomic density of silicon(em*) and N’ is the density of available interstitial sites (em) and is represented by N’ =1x107e7*")"" cm, (3) How many chips of area 400 mm* can be placed on wafer 300 mm in diameter? Explain your assumptions regarding the chip shape and unused wafer perimeter.[3] Define segregation coefficient. 0) What is P-glass flow? Mention its advantages. [2] Give the chemical reaction for the deposition of Silicon nitride using LPCVD process. (2 Q10.For an integrated inductor with an inductance of 10 nH, what is the required radius if the number of turns is 20? [2] Q11.What is electromigration? Explain briefly. [3] Q12 The different steps involved in a Wafer preparation are given below. Arrange them in proper order. (a) Etching (b) Packaging (c) Wafer lapping and edge grind (d) cleaning (e) crystal growth (f) wafer slicing (g) polishing (h) shaping (i) inspection [3]List of constants: k= 8.62 x 10° eV/K £=8.854 x 10°" Ficm ge 1.6x 10°C bp (Si) = 480 cm?/V-s bn (Si) = 1950 em?/V-s Permeability in vacuum jio= 42x10" H/m. AtT=300K kT=0.0259 eV (Si) =11.9 8 x 10'° cm at T = 300K E,(Si) = 1.1 eV Atomic density of silicon = 5 x 10° om®BIRLA INSTITUTE OF TECHNOLOGY AND SCIENCE PILANT K.K BIRLA GOA CAMPUS FIRST SEMESTER (2011-12) Comprehensive Examinations IC Fabrication Technology (MEL G611) Date : 07-12-2011 Time : 2 hours Maximum Marks: 55 Closed Book Instructions: i) Answer All questions. (ii) Any required data not explicitly given, may be suitably assumed and stated. Qt. Q2. Q3. Q4. Qs. Q6. Q7. as. Q9. With a neat and labeled diagram explain the working principle of of Czochraski crystal growth apparatus. {8) List the different trapped charges present in a MOS structure. Mark them in a figure and explain each one. (6) Define degree of anisotropy in dry etching process and explain its significance. [3] What is diffusion? Explain the diffusion process and derive Fick’s diffusion equation. (8] What is ion channeling effect? Explain. [3] With a labeled schematic diagram explain the operation of chemical vapor deposition reactor (any one). [5] Estimate the intrinsic RC values of two parallel Al wires 0.5 um «0.5 um in cross section, 1mm in length, and separated by a polyimide (k~2.7) dielectric layer that is 0.5 jum thick. The resistivity of Al is 2.7 1Q-cm. [3] A DRAM capacitor has the following parameters: C= 40 fF, cell size = 1.28 pm?, and k = 3.9 for silicon dioxide. If we replace SiOz with TazOs (k=25) without changing thickness, what is the equivalent cell area of the capacitor? {3} Draw a complete step by step set of masks for the CMOS inverter, starting with n-Silicon. (8) Q10. What is Damascene Technology? Differentiate between single and double Damascene Technology. [4] Q12. Mention any four different dry etching methods. [4]