1N4001 ........

1N4007
BY133........... P513

1 Amp. Silicon Rectifier Diodes

Dimensions in mm. DO-15

(Plastic) Voltage
50 to 1600 V.

Current
1.0 A. at 75°C.
6.35 ± 0.2

58.5 min.

• Low cost
Mounting instructions • Diffused junction
1. Min. distance from body to soldering point,
• High current capability
4 mm.
2. Max. solder temperature, 350°C. • The plastic material carries
U/L recognition 94 V-0
3. Max. soldering time, 3,5 sec.
4. Do not bend lead at a point closer than • Terminals: Axial Leads
2 mm. to the body. • Polarity: Color band denotes cathode

Maximum Ratings, according to IEC publication No. 134

1N 1N 1N 1N 1N 1N 1N BY P
4001 4002 4003 4004 4005 4006 4007 133 513

VRRM Peak recurrent reverse voltage (V) 50 100 200 400 600 800 1000 1300 1600

IF(AV) Forward current at Tamb = 75°C 1A

IFRM Recurrent peak forward current 10 A

IFSM 10 ms. peak forward surge current 50 A

Tj Operating temperature range – 65 to + 150 °C

Tstg Storage temperature range – 65 to + 150 °C

Electrical Characteristics at Tamb = 25°C

VF Max. forward voltage drop at IF = 1 A 1.1V

IR Max. reverse current at VRRM at 25°C 5µA

at 100°C 100 µ A
Rthj-a Max. thermal resistance (I = 10 mm.) 60° C/W
 1N4000

Characteristic Curves

TYPICAL FORWARD CHARACTERISTIC FORWARD CURRENT DERATING CURVE

1.2
10mm. - 10mm.
10
1

10
0
0.8
R or L Load

0.6
-1
C-Load
10
0.4
Tj = 150°C
Tj = 25°C
-2
10 0.2

0
-3
10 0 25 50 75 100 125 150 175
0 1.2 2.4 3.6 Tamb, ambient temperature (°C)
VF' instantaneous forward voltage (V)

MAXIMUM NON-REPETITIVE
THERMAL RESISTANCE PEAK FORWARD SURGE CURRENT
100
80 IFM
50 1 cycle

60
20
Tj = 25°C
40
10

I I
20
4

0 2
0 10 20 30 1 2 4 10 20 100
I, lead lenght (mm.) Number of cycles at 50 Hz.