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PN Junction & Schottky Diode: Cathode Anode
PN Junction & Schottky Diode: Cathode Anode
& Schottky
Diode
Cathode Anode
1
Reverse-Bias PN Junction Charge Density
Electric Field
kT
VT = ≅ 26mV
q
Built-In Potential (0 Bias) Reverse-bias
is similar
N AND
φbi = VT ln Potential as 0 bias
ni2 condition
kT
VT = ≅ 26 mV at 300oK
q
ni is the intrinsic carrier concentration approximates 1.5e-10 cm-3 at 300oK
K is Boltzsmann Constant
2
* Built-In Potential oppose the diffusion of mobile holes and electrons
across the junction.
∂ 2V ρ
* Apply Poisson’s equation = − to solve for V
∂x 2 ε
3
* Maximum field increase as the doping density increase.
* Increase reverse bias voltage will increase maximum field.
* Junction breakdowns when bias exceeds VBREAKDOWN voltage
I
VBREAKDOWN
4
* Apply ∂Q C (V = 0 ) for uniform doping in both
C j (V ) = =
∂V 1
p,n region
V 2
1 −
Φ bi
5
I-V Characteristics
Forward
Bias
(Curve of exponential)
CMOS
7
Review:
qV
I = I S (e nkT
− 1)
8
9
q I
N≈
KT ∂I
∂V
10
N
11
kT I
V= log
q IS
For large V
Straight line
in logarithm scale
for large V
12
Series Resistance
(parasitic component)
• Accounts for
Ohmic drop,
neglected so far
kT I
V = IRs + log
q IS
For large V
13
I
Use log here
IS
kT I
V = IRs + log
q IS
For large V
I
If log =6, IS=1.6e-6 A, and V=0.71V
IS
14
Fabricate PN junction diode in CMOS
16
* pn junction is one kind of diode
17
In Practical!
18
Cd(V) then Cj(V)?
! Initial large or small Cd(V)?
P + P
+ + - -
Forward-bias + + + - - - Reverse-bias
- - - + + +
- - + +
-
It takes time
20
Majority electron
P P
Instant switched
+ + to reverse bias + + -
Forward bias + + + + + +
Vf Vr
- - - - - -
- - - - +
Vr >> Vf
and
Rs is very small
22
23
24
Schottky Diode
• Metal-Semiconductor junction.
• Lower forward turn-on voltage.
Schottky No minority
ID carrier storage!
VD
26
I-V characteristics
qV
• Based on I = I S (e − 1)
nkT
•
n : ideality factor
I S : reverse saturation current
k : Boltzmann constant
T : absolute temperature
V : bias voltage
q (V − I D Rs )
GxV : edge leakage current I D = I S (e
nkT
− 1) + GxV
IRS : voltage drop due to ohmic contact
and bulk resistance of semiconductor channel.
(ohmic contact is a metal-semiconductor contact that has
a linear I-V and non-rectifying characteristics. )
27
C-V characteristics
C j0
(1 − V ) m for V < F V
Vj C j
C D (V ) =
C j0 mv
(1 − FC ( m + 1) + ) for V > FCV j
(1 − V ) m +1 C Vj
Vj
• Semi-empirical equation
• m : grating coefficient
V j : built-in potential of the barrier height of junction
C j 0 : zero-bias junction capacitance.
FC : depletion capacitance coefficient.
C j0
• approximated by C D (V ) =
V
(1 − ) n
• G = ∂I D
Vj
D
∂V 28
Diode modeling
• DC I-V measurement
qV
• When IDRs << Bias voltage and ignore Is and GxV as compared with I S e
nkT
qV
Total diode current ID approximated by I D = I S e nkT
qV qV
log( I D ) = log( I S ) + log(e nkT
)= log(e) + log( I S )
nkT
q log(e) / kT
By taking the derivation with respect to V Î n =
∆ log( I ) / ∆V
29
• Is can be calculated from the curve.
• knowing n and Is. Gx can be found by curve fitting at low current region
• At high current region, ignore GxV and Is as compared with q (V − I D RS )
nkT
I S e
q (V − I D RS )
ID = ISe nkT
Î q (V − I D RS )
log( I D ) = log( I S ) + log(e)
nkT
= log( I S ) + q (V − ∆V ) log(e)
nkT
∆V = I D RS
30
Small signal model
or simplified as
31
Large Signal Model
32
• f T : cutoff frequency
1
fT = (bias and RF power dependent)
2πRs C D
• Noise: shot noise and thermal noise are two major source
f
• A random fashion of generation-recombination effect in the
depletion layer.
34
Noise model
CD
< iT > 2
cathode Lp2 ID anode
Rs
Cp2 Cp1
< is > 2
< i f >2
35
Schottky diode as level shift
qV f ID
I D ≅ I S (exp − 1)
KT
KT ID V
Vf = ln( )
q IS
ID
VD , Drop = V f + I f RS
36
Diode
• multiplier
• Detector
• Mixer
• Varactor
• Switch
• Limiter
• Level-Shifting Device
Cathode Anode