CHAPTE R 4

Diodes
(non-linear devices)

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 Diode structure

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Ideal Diode

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 Figure 4.2 The two modes of operation of ideal diodes and the
use of an external circuit to limit (a) the forward current and
(b) the reverse voltage.

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 Simple diode application: rectifier

T=1/f

T = period (second, 16.7ms)

f = frequency (Hertz, 60Hz)

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 Simple diode application: the rectifier

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 Example 4.1.

- The diode conducts when vs exceeds 12V

- The diode stops conducting when vs falls below 12V

- The current iD flows in the conduction angle 2θ
- θ=60O or conduction angle 2θ = 120O
- Maximum current (peak current) I=(24-12)/100=120mA
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 Simple diode application: the diode logic gates

Figure 4.5 Diode logic gates: (a) OR gate; (b) AND gate (in a positive-logic system).

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 Example 4.2.

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Exercise 4.4

Figure E4.4

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 Terminal Characteristics of Junction Diodes

VD iD
VD = VT ln
iD = I S ( e VT
− 1) IS
kT
Thermal voltage: VT =
q

ID= diode current

VD= voltage across the diode
Is= Diode saturation current
k= Boltzmann’s constant 1.38x10-23 J/K
T= absolute temp. (273+xOC)
q= electronic charge (1.60x10-19 Coulomb)

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 Terminal Characteristics of Junction Diodes

1. Forward bias region: v>0

2. Reverse bias region: v<0
3. Break down region: v<-Vzk

i=-IS

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 Effect of Temperature

kT
VT =
q

Figure 4.9 Temperature dependence of the diode forward

characteristic. At a constant current, the voltage drop decreases by
approximately 2 mV for every 1°C increase in temperature.
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Diode Exponential Model

Figure 4.11 Graphical analysis of the circuit in Fig. 4.10 using the
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exponential diode model.
 Diode Constant-Voltage-Drop Model

Figure 4.12 Development of the diode constant-voltage-drop model: (a) the

exponential characteristic; (b) approximating the exponential characteristic
by a constant voltage, usually about 0.7 Vi; (c) the resulting model of the
Microelectronic Circuits, Sixth Edition
forward–conducting
Sedra/Smith diodes.
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 Example: Output 2.4V, current 1mA, diode voltage drop 0.7V,
find R

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 VT  ∂I D 
rd = rd = 1 /  
Figure 4.13 ∂
 V i =I
I DDevelopment of the diode small-signal
v model.
D D

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 Example

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 Use Diode Forward Drop in Voltage Regulation.

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 Operation in the Reverse Breakdown Region
– Zener Diodes –

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 Zener Diode Model

V Z= VZ 0 + rZ I Z

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 Example: Shunt regulator zener diode

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 Use of Zener Diode

-Shunt Regulator
-The diode is in parallel with the load

-Temperature Sensing
- Using temperature coefficient (temco)
- -2mV/0C

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 Rectifier Circuits

ripple

ac DC

Figure 4.20 Block diagram of a dc power supply.

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The half-wave rectifier
PIV = vS

Figure 4.21 (a) Half-wave rectifier. (b) Transfer characteristic of the

Microelectronic Circuits, rectifier
Sixth Edition circuit. (c) Input and output
Sedra/Smith waveforms.
Copyright © 2010 by Oxford University Press, Inc.
 The full-wave rectifier

Center tap
transformer

PIV = 2vS - VD

Figure 4.22 Full-wave rectifier utilizing a transformer with a center-tapped secondary

winding: (a) circuit; (b) transfer characteristic
assuming a constant-voltage-drop model for the diodes; (c) input and output
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waveforms.
 The bridge rectifier

PIV = vS - VD

Figure 4.23 The bridge

rectifier: (a) circuit; (b) input
and output waveforms.

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 The peak rectifier – filtering with capacitor

Figure 4.24 (a) A simple circuit used to illustrate the effect of a filter capacitor.
(b) Input and output waveforms assuming an ideal diode. Note that the circuit
provides a dc voltage equal to the peak of the input sine wave. The circuit is
therefore known as a peak
Microelectronic Circuits, Sixth Edition
rectifier or aCopyright
Sedra/Smith
peak© 2010
detector.
by Oxford University Press, Inc.
i D = iC + i L
dv I
iC = C
dt
v0
iL =
R

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 Ripple:
IL
Vr =
2 fC
Vp
IL =
R

Figure 4.26 Waveforms in the full-wave peak rectifier.

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 Precision half-wave rectifier

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 Limiter Circuit

Figure 4.28 General transfer

characteristic for a limiter circuit.

Figure 4.30 Soft limiting.Sedra/Smith

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 A variety of basic limiting circuits.

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 A variety of basic limiting circuits.

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 The clamped capacitor or dc restorer with a square-wave input
and no load.

The clamped capacitor with load resistance.

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Voltage doubler: (a) circuit;
(b) waveform of the voltage
across D1.

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 Other Diode devices:

1. Schottky-Barrier diode (SBD):

- Metal anode, semiconductor cathode
- Fast switching ON/OFF.
- Low forward voltage drop (0.3 – 0.5 V)
2. Varactors:
- Capacitance between PN junction
- Changing reverse voltage, changing capacitance
3. Photodiodes:
- Reverse-biased PN junction illuminates
- Converting light signal to electrical signal
4. LEDs:
- Inverse function of
Microelectronic Circuits, Sixth Edition
photodiodes
Sedra/Smith
(electrical to light)
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Example:

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 Summary

Microelectronic Circuits Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.

 Summary

9/20/2016Microelectronic Circuits Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.