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TO-92
A
Features
Epitaxial planar die construction
B
Surface device type mounting E
Moisture sensitivity level 1 G
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Ordering Information
Version:A12
BC337-16/25/40,BC338-16/25/40
NPN Transistor Preliminary
Version:A12
BC337-16/25/40,BC338-16/25/40
NPN Transistor Preliminary
Small Signal Diode
DC current gain
current gain Group16 VCE=1V IC=100mA/300mA 100/60 250 -
25 VCE=1V IC=100mA/300mA hFE 160/60 400 -
40 VCE=1V IC=100mA/300mA 250/60 630 -
-
Collector-Emitter saturation voltage IC=500mA IB=50mA VCE(sat) 0.7 V
'-
Base-Emitter on voltage VCE= 1V IC=300mA VBE(on) - 1.2 V
Version:A12