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2014 - CI-Brasil - Introdução A Alunos1 PDF
2014 - CI-Brasil - Introdução A Alunos1 PDF
Nilton Morimoto
IC‐Brazil Coordinator, PSI/USP
Eric Fabris
CT Technical Coordinator, EE/UFRGS
Oscar Salviani
CT2 Local Coordinator, CTI/MCTI
João Martino
CT3 Local Coordinator, PSI/USP
IC‐Brazil Program
O começo de tudo
Electrode Gate
Resistance NMOS Transistor
Hot
Carrier
Stability
SD Series
Resistance
0.09 µm
Thin Oxide
Stability-
Electrical/Phys
Channel
ical
Profile , SCE,
Fluctuations,
Quantum
Effects
Capacitor tipo trincheira
Gates / Chip Vs. No. Levels Of Interconnect
100.00
10.00 7-Level
Metal
3-Level No. Levels Of
Metal Interconnect
1.00
Gates/Chip (Millions)
0.3 Million
Gates/Chip
0.10
1990 1992 1994 1996 1998 2000 2002 2004 2006 2008
Year Of First Introduction
Increasing Number Of Contacts
And Vias (Nodes) Per Chip
0.25 µm Technology:
10 Million Logic Transistors / Chip
~ 50 Million Nodes / Chip
Increasing Number Of Contacts
And Vias (Nodes) Per Chip
Yield:
5% Loss:
5 Bad Nodes / (100 chips X 50Million Nodes)
1 Bad / 1 Billion Nodes!
Reliability:
10 FIT (0.1% Device Failures In 10 Years):
1 Failed Node / (1000 Chips X 50 Million Nodes)
1 Failure / 50 Billion Nodes!
Driving Forces
• Technical
IC‐Brazil Program
Trends: “The Network” is driving technology
2000...
“The Network”
1990s
“The PC”
1980s
“Computer/Workstation”
1970s
Military/Aerospace
Networking and Computing
Systems Group Enterprise
Computing
Personal Systems
Computing Division
Systems
Networking
Division
Systems Division
Access
C.O.
N IC
Router Backbone
Switch/Hub C.O.
10/100 Ethernet Telecom
Switch
ATM
Switch
Modems Access
Node
Communications
Transmission & Access Basestations
Systems Division
Wireless Infrastructure Systems
Division
Enterprise Routers
Switch/Hub
platforms
Central Office
Switching and
Transmission
ATM Switching
Analog Modems
Remote Access
Servers Access Mux
(DSLAM)
Cable Modems
Wireless
Infrastructure
ADSL Modems
Infrastructure
ULSI Process Roadmap
Dual Inlaid
Copper with SiOF
Low K ILD 1000 MHz
0.10
1.2 volts
Dual Inlaid
Copper
Interconnect
Process Performance
600 MHz
0.13 TFSOI
1.5 volts
400 MHz
0.15
1.8 volts
350 MHz
0.18
1.8 volts
300 MHz
0.27
2.5 volts Buried Oxide
200 MHz
0.35
2.5 volts Silicon Substrate
120 MHz
0.50
3.3 volts Production Dates
1994 1995 1996 1997 1998 1999 2000 2001
Driving Forces
• Market and economic
IC‐Brazil Program
What is Driving Strong FDI inward?
Market size and strong industrial base
A growing domestic electronics market
Brazilian Electronics Market [B$]
A fast growing business‐oriented economy with a huge electronics market
Industrial Policy and Market Response Timeline
2. IC‐Brazil Program
1. Objectives
2. Organization
3. Training Centers
4. Design Houses
5. Examples of IC
IC‐Brazil Program
2.1 Brazil‐IC Program Start
• July 2005
• Launched by CATI/SEPIN/MCT
• Initiative of Academy, Government and Industry
IC‐Brazil Program
2.1 IC‐Brazil ‐ Vision & Objectives
• To promote the development of an ecosystem in
microelectronics in Brazil and the insertion of Brazil in the
semiconductor market
– Promote local IC companies
– Attraction of international companies
– Promote electronics innovation: RFID, DTV, instrumentation,
automation, …
• Synergy with other governmental incentives:
• Informatics law
• PADIS – program for semiconductors and displays
• PDP
• Subvention programs by FINEP and BNDES
• …
IC‐Brazil Program
2.1 Focus on IC Design
• Demand for new ICs:
– Growing markets
– New applications
– Growing opportunity for Fabless (since 2006: > 20%)
• Fertile field for innovation
• Some Technical Challenges:
– Growing complexity & functionality
– Power consuption and heat removal
– SoC and SIP
– Growing parameter variability – redundancy and
route auto‐correction
IC‐Brazil Program
IC Brazil Organization Chart
IC‐Brazil Program
2.3 Training Centers
• Objectives:
• Increase specialized human resources in IC design
• Attract talent people for R&D on commercial
applications
• Create, in short time, a critical mass of IC
designers to promote semiconductor activities in
Brazil
IC‐Brazil Program
2.3 Training Centers
• CT1 – UFRGS, Porto Alegre – start: April 2008
• CT2 – CTI, Campinas – start: August 2008
• CT3 – USP, São Paulo – Start: August 2014
• Structure: Phases I, II e III
– Phase I: theory and EDA tools – 5 months
– Phase II: IC design project – 7 months
– Phase III: internship at DH´s or companies – 12 months
IC‐Brazil Program
2.4 Design Houses
• Total = 19
• +
Perseptia
STI Semiconductors
IC‐Brazil Program
General Tendencies and Challenges
• New products and applications
• Cloud computing
• Convergences of functions: notebook or
smartphone?
• Mobility and easy to use
• Universal access, connectivity, interoperability
• Wireless sensor network
• Ambient energy harvesting
• Ecological correctness
IC‐Brazil Program
Some specific opportunity fields
• RFID: cattle, vehicles, food, goods, documents,
health items (blood, drugs, vaccines), etc.
• Brazilian Digital TV
• Low cost education tools, Tablet, …
• Wireless sensor networks: agriculture, environment,
energy, health, etc
• Energy: smart grid, deep water oil exploration,
ethanol production chain
• Embedded electronics: agriculture implements, cars,
avionics
IC‐Brazil Program
Ecological challenges – Green ICT
• Norms:
– RoHS ‐ Restriction of Hazard
toxidade
Substance
– WEEE – Waste of ElectroElectronic
Equipment reciclagem
• Ecodesign Concepts and Life Cycle
Analysis energia
IC‐Brazil Program
Energy
• Increasing energy consumption by ICT (10% of
electrical energy)
• Demand for carbon free energy (green)
• Alternative energies:
– Eolic
– Photovoltaic – CAGR > 40 %
– Other forms of energy harvesting
• Reduce/optimize energy consumption:
– Smart grid
– Light and displays by LED and OLED
– Ecodesign of products (includes energy efficiency)
IC‐Brazil Program
Photovoltaic Energy
• Installed per year: 2009 = 7,3GW, 2010 = 17,5GW
(ITAIPU=14GW)
• Headed by Germany: 2009 = 3,8 GW, 2010 = 7,3 GW
• PV energy cost: 2009 = $2.15 Wp; 2010 = $1.75 Wp
• c‐Si will continue to dominate the next ~ 10 years (in
2020: consumption of 51.000t polysilicon, with 3g/W)
IC‐Brazil Program
Thank You
Obrigado
morimoto@LSI.USP.BR
www.ci‐brasil.gov.br
ACKNOWLEDGMENTS
IC‐Brazil Program