BU406/406H/408

BU406/406H/408

High Voltage Switching

• Use In Horizontal Deflection Output Stage

1 TO-220

1.Base 2.Collector 3.Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage 400 V
VCEO Collector-Emitter Voltage 200 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current (DC) 7 A
ICP Collector Current (Pulse) 10 A
IB Base Current 4 A
PC Collector Dissipation 60 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C

Electrical Characteristics TC=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Max. Units
ICES Collector Cut-off Current VCE = 400V, VBE = 0 5 mA
VCE = 250V, VBE = 0 100 µA
VCE = 250V, VBE = 0 @ TC=150°C 1 mA
IEBO Emitter Cut-off Current VBE = 6V, IC = 0 1 mA
VCE(sat) Collector-Emitter Saturation Voltage
: BU406 IC = 5A, IB = 0.5A 1 V
: BU406H IC = 5A, IB = 0.8A 1 V
: BU408 IC = 6A, IB = 1.2A 1 V
VBE(sat) Base-Emitter Saturation Voltage
: BU406 IC = 5A, IB = 0.5A 1.2 V
: BU406H IC = 5A, IB = 0.5A 1.2 V
: BU408 IC = 6A, IB = 1.2A 1.5 V
fT Current Gain Bandwidth Product VCE = 10V, IC = 0.5A 10 MHz
tOFF Turn OFF Time
: BU406 IC = 5A, IB = 0.5A 0.75 µs
: BU406H IC = 5A, IB = 0.8A 0.4 µs
: BU408 IC = 6A, IB = 1.2A 0.4 µs

©2000 Fairchild Semiconductor International Rev. A, February 2000

 BU406/406H/408
Typical Characteristics

5
A mA 1000
00m 180
60mA
IB = 2 IB =
IB = 1 A
IB = 140m VCE = 5V
A
IB = 120m
IC[A], COLLECTOR CURRENT

4
0m A
I B = 10
mA
IB = 80

hFE, DC CURRENT GAIN

mA 100
3 IB = 60
mA
IB = 40

IB = 20mA 10

0
0 1 2 3 4 5 6 7 8 9 10 1
1 10 100 1000 10000

VCE[V], COLLECTOR-EMITTER VOLTAGE

IC[mA], COLLECTOR CURRENT

Figure 1. Static Characteristic Figure 2. DC current Gain

VCE(sat)[V], VBE(sat)[V]SATURATION VOLTAGE

10000 1000

IC = 10 IB f = 1MHz
Cob [pF], CAPACITANCE

1000 VBE (sat) 100

100 10

VCE(sat)

10 1
1 10 100 1000 10000 1 10 100

IC[mA], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE

Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector Output Capacitance

Collector-Emitter Saturation Voltage

80

70
PD [W], POWER DISSIPATIOAN
IC[A], COLLECTOR CURRENT

IC Max. (Pulsed) 60
10
IC Max. (Continuous)
50
Di
ss
ip

1m

40
at

s
io

10 ited
n

10
0m
Li

m
m

s
s

30
1

20
S/
bL
im

10
VCE MAX.
ite
d

0
0.1 0 25 50 75 100 125 150 175 200
1 10 100
o
TC[ C], CASE TEMPERATURE
VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 5. Safe Operating Area Figure 6. Power Derating

©2000 Fairchild Semiconductor International Rev. A, February 2000

 BU406/406H/408
Typical Characteristics (Continued)

Figure 7. Static Characteristic Figure 8. DC current Gain

©2000 Fairchild Semiconductor International Rev. A, February 2000

 BU406/406H/408
Package Demensions

TO-220

1.30 ±0.10 9.90 ±0.20 4.50 ±0.20

(8.70)

2.80 ±0.10
(1.70)

+0.10
ø3.60 ±0.10 1.30 –0.05

18.95MAX.
(3.70)

15.90 ±0.20
9.20 ±0.20

(1.46)

(3.00)
(45°
)
(1.00)
13.08 ±0.20

10.08 ±0.30

1.27 ±0.10 1.52 ±0.10

0.80 ±0.10 +0.10

0.50 –0.05 2.40 ±0.20
2.54TYP 2.54TYP
[2.54 ±0.20] [2.54 ±0.20]

10.00 ±0.20

Dimensions in Millimeters

©2000 Fairchild Semiconductor International Rev. A, February 2000

 TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™ HiSeC™ SuperSOT™-8

Bottomless™ ISOPLANAR™ SyncFET™
CoolFET™ MICROWIRE™ TinyLogic™
CROSSVOLT™ POP™ UHC™
E2CMOS™ PowerTrench® VCX™
FACT™ QFET™
FACT Quiet Series™ QS™
FAST® Quiet Series™
FASTr™ SuperSOT™-3
GTO™ SuperSOT™-6

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As used herein:
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or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2000 Fairchild Semiconductor International Rev. E

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