2N6487, 2N6488 (NPN),

2N6490, 2N6491 (PNP)

Complementary Silicon
Plastic Power Transistors
These devices are designed for use in general−purpose amplifier and
switching applications. www.onsemi.com

Features
15 AMPERE
• High DC Current Gain COMPLEMENTARY SILICON
• High Current Gain − Bandwidth Product POWER TRANSISTORS
• TO−220 Compact Package 60−80 VOLTS, 75 WATTS
• These Devices are Pb−Free and are RoHS Compliant*
PNP NPN
MAXIMUM RATINGS (Note 1) COLLECTOR 2, 4 COLLECTOR 2, 4
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO Vdc
2N6487, 2N6490 60 1 1
2N6488, 2N6491 80 BASE BASE

Collector−Base Voltage VCB Vdc

2N6487, 2N6490 70 EMITTER 3 EMITTER 3
2N6488, 2N6491 90
4
Emitter−Base Voltage VEB 5.0 Vdc
Collector Current − Continuous IC 15 Adc
TO−220
Base Current IB 5.0 Adc
CASE 221A
Total Power Dissipation PD STYLE 1
@ TC = 25_C 75 W
Derate above 25_C 0.6 W/°C 1
2
Total Power Dissipation PD 3
@ TA = 25_C 1.8 W
Derate above 25_C 0.014 W/°C MARKING DIAGRAM
Operating and Storage Junction TJ, Tstg −65 to +150 °C
Temperature Range
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Indicates JEDEC Registered Data. 2N64xxG
AYWW
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 1.67 _C/W
Thermal Resistance, Junction−to−Ambient RqJA 70 _C/W

2N64xx = Specific Device Code

xx = See Table on Page 5
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week

ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
See detailed ordering, marking, and shipping information in
download the ON Semiconductor Soldering and Mounting Techniques
the package dimensions section on page 5 of this data sheet.
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2014 1 Publication Order Number:

November, 2014 − Rev. 16 2N6487/D
 2N6487, 2N6488 (NPN), 2N6490, 2N6491 (PNP)

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)

Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3) VCEO(sus) Vdc
(IC = 200 mAdc, IB = 0)
2N6487, 2N6490 60 −
2N6488, 2N6491 80 −
Collector−Emitter Sustaining Voltage (Note 3) VCEX Vdc
(IC = 200 mAdc, VBE = 1.5 Vdc)
2N6487, 2N6490 70 −
2N6488, 2N6491 90 −
Collector Cutoff Current ICEO mAdc
(VCE = 30 Vdc, IB = 0)
2N6487, 2N6490 − 1.0
(VCE = 40 Vdc, IB = 0)
2N6488, 2N6491 − 1.0
Collector Cutoff Current ICEX mAdc
(VCE = 65 Vdc, VEB(off) = 1.5 Vdc)
2N6487, 2N6490 − 500
(VCE = 85 Vdc, VEB(off) = 1.5 Vdc)
2N6488, 2N6491 − 500
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
2N6487, 2N6490 − 5.0
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
2N6488, 2N6491 − 5.0

Emitter Cutoff Current IEBO mAdc

(VBE = 5.0 Vdc, IC = 0) − 1.0

ON CHARACTERISTICS
DC Current Gain hFE −
(IC = 5.0 Adc, VCE = 4.0 Vdc) 20 150
(IC = 15 Adc, VCE = 4.0 Vdc) 5.0 −
Collector−Emitter Saturation Voltage VCE(sat) Vdc
(IC = 5.0 Adc, IB = 0.5 Adc) − 1.3
(IC = 15 Adc, IB = 5.0 Adc) − 3.5
Base−Emitter On Voltage VBE(on) Vdc
(IC = 5.0 Adc, VCE = 4.0 Vdc) − 1.3
(IC = 15 Adc, VCE = 4.0 Vdc) − 3.5

DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 4) fT MHz
(IC = 1.0 Adc, VCE = 4.0 Vdc, ftest = 1.0 MHz) 5.0 −

Small−Signal Current Gain hfe −

(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz) 25 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Indicates JEDEC Registered Data.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
4. fT = |hfe| • ftest

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 2N6487, 2N6488 (NPN), 2N6490, 2N6491 (PNP)

TA TC
4.0 80

PD, POWER DISSIPATION (WATTS)

3.0 60
TC

2.0 40
TA

1.0 20

0 0
0 20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C)

Figure 1. Power Derating

VCC
+ 30 V 1000

25 ms RC 500
+ 10 V tr
SCOPE
RB 200
0
t, TIME (ns)

- 10 V 100
51 D1
tr, tf v 10 ns 50 NPN td @ VBE(off) [ 5.0 V
DUTY CYCLE = 1.0% -4V PNP
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS. TC = 25°C
FOR PNP, REVERSE ALL POLARITIES. 20
VCC = 30 V
IC/IB = 10
D1 MUST BE FAST RECOVERY TYPE, e.g.: 10
1N5825 USED ABOVE IB [ 100 mA 0.2 0.5 1.0 2.0 5.0 10 20
MSD6100 USED BELOW IB [ 100 mA IC, COLLECTOR CURRENT (AMP)

Figure 2. Switching Time Test Circuit Figure 3. Turn−On Time

1.0
0.7
r(t), TRANSIENT THERMAL RESISTANCE

D = 0.5
0.5
0.3
0.2
0.2
(NORMALIZED)

0.1
0.1 ZqJC (t) = r(t) RqJC P(pk)
0.07 0.05
RqJC = 1.67°C/W MAX
0.05 D CURVES APPLY FOR POWER
0.02
PULSE TRAIN SHOWN t1
0.03
READ TIME AT t1 t2
0.02 0.01 TJ(pk) - TC = P(pk) ZqJC(t)
SINGLE PULSE DUTY CYCLE, D = t1/t2
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k
t, TIME (ms)
Figure 4. Thermal Response

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 2N6487, 2N6488 (NPN), 2N6490, 2N6491 (PNP)

20 There are two limitations on the power handling ability of

10 100 ms a transistors average junction temperature and second
IC, COLLECTOR CURRENT (AMP)

breakdown. Safe operating area curves indicate IC − VCE

5.0 500 ms limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
2.0 1.0 ms dissipation than the curves indicate.
TJ = 150°C
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
1.0 SECOND BREAKDOWN LIMITED 5.0 ms
variable depending on conditions. Second breakdown pulse
BONDING WIRE LIMITED
0.5 THERMALLY LIMITED @ TC = 25°C
limits are valid for duty cycles to 10% provided TJ(pk)
CURVES APPLY BELOW RATED VCEO
≤ 150_C. TJ(pk) may be calculated from the data in Figure 4.
0.2 2N6487, 2N6490 dc
At high case temperatures, thermal limitations will reduce
2N6488, 2N6491 the power that can be handled to values less than the
0.1 limitations imposed by second breakdown.
2.0 4.0 10 20 40 60 80
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 5. Active−Region Safe Operating Area

5000 1000

700
ts
Cob
1000 C, CAPACITANCE (pF)
300 Cib
t, TIME (ns)

500 tf Cob
200
NPN
200 PNP VCC = 30 V
100 NPN
IC/IB = 10
100 IB1 = IB2 PNP
70
TJ = 25°C TJ = 25°C
50 50
0.2 0.5 1.0 2.0 5.0 10 20 0.5 1.0 2.0 5.0 10 20 50
IC, COLLECTOR CURRENT (AMP) VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Turn−Off Time Figure 7. Capacitances

NPN PNP
2N6487, 2N6488 2N6490, 2N6491
500 500
TJ = 150°C
200 25°C 200 TJ = 150°C
hFE, DC CURRENT GAIN

hFE, DC CURRENT GAIN

25°C
100 100
-55°C -55°C

50 50

20 20
VCE = 2.0 V
10 10 VCE = 2.0 V

5.0 5.0
0.2 0.5 1.0 2.0 5.0 10 20 0.2 0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain

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 2N6487, 2N6488 (NPN), 2N6490, 2N6491 (PNP)

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

2.0 2.0
1.8 TJ = 25°C 1.8 TJ = 25°C

1.6 1.6
1.4 1.4
1.2 1.2
1.0 IC = 1.0 A 1.0 IC = 1.0 A 4.0 A 8.0 A

0.8 0.8
4.0 A 8.0 A
0.6 0.6
0.4 0.4
0.2 0.2
0 0
5.0 10 20 50 100 200 500 1000 2000 5000 5.0 10 20 50 100 200 500 1000 2000 5000
IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region

2.8 2.8

2.4 TJ = 25°C 2.4 TJ = 25°C

V, VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS)
2.0 2.0

1.6 1.6

1.2 1.2
VBE(sat) = IC/IB = 10 VBE(sat) @ IC/IB = 10
0.8 0.8
VBE @ VCE = 2.0 V VBE @ VCE = 2.0 V
0.4 0.4
VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10
0 0
0.2 0.5 1.0 2.0 5.0 10 20 0.2 0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)

Figure 10. “On” Voltages

ORDERING INFORMATION
Device Device Marking Package Shipping
2N6487G 2N6487 TO−220 50 Units / Rail
(Pb−Free)

2N6488G 2N6488 TO−220 50 Units / Rail

(Pb−Free)

2N6490G 2N6490 TO−220 50 Units / Rail

(Pb−Free)

2N6491G 2N6491 TO−220 50 Units / Rail

(Pb−Free)

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 2N6487, 2N6488 (NPN), 2N6490, 2N6491 (PNP)

PACKAGE DIMENSIONS

TO−220
CASE 221A−09
ISSUE AH

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
−T− PLANE 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
B F C BODY AND LEAD IRREGULARITIES ARE
T ALLOWED.
S
INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
Q A B 0.380 0.415 9.66 10.53
C 0.160 0.190 4.07 4.83
1 2 3 U D 0.025 0.038 0.64 0.96
F 0.142 0.161 3.61 4.09
H G 0.095 0.105 2.42 2.66
H 0.110 0.161 2.80 4.10
K J 0.014 0.024 0.36 0.61
Z K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
L R Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
V J S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
G U 0.000 0.050 0.00 1.27
V 0.045 --- 1.15 ---
D Z --- 0.080 --- 2.04
N
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR

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or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
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