FQD7P20 — P-Channel QFET® MOSFET

November 2013

FQD7P20
P-Channel QFET® MOSFET
-200 V, -5.7 A, 690 mΩ

Description Features
This P-Channel enhancement mode power MOSFET is • -5.7 A, -200 V, RDS(on) = 690 mΩ (Max.) @ VGS = -10 V,
produced using Fairchild Semiconductor’s proprietary planar ID = -2.85 A
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state • Low Gate Charge (Typ. 19 nC)
resistance, and to provide superior switching performance • Low Crss (Typ. 25 pF)
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, audio amplifier, • 100% Avalanche Tested
DC motor control, and variable switching power applications.

D
G
G
S D-PAK

Absolute Maximum Ratings TC = 25°C unless otherwise noted.



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Maximum Lead Temperature for Soldering,

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1/8" from Case for 5 Seconds.

Thermal Characteristics
Symbol Parameter FQD7P20TM Unit
RJC Thermal Resistance, Junction to Case, Max. 2.27
oC/W
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 110
RJA 2
Thermal Resistance, Junction to Ambient (*1 in Pad of 2-oz Copper), Max. 50

©2000 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FQD7P20 Rev. C0
 FQD7P20 — P-Channel QFET® MOSFET
Package Marking and Ordering Information
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FQD7P20TM FQD7P20 D-PAK Tape and Reel 330 mm 16 mm 2500 units

Electrical Characteristics TC = 25°C unless otherwise noted.



 
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Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 26.3 mH, IAS = -5.7 A, VDD = -50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ -7.3 A, di/dt ≤ 300 A/µs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.

©2000 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FQD7P20 Rev. C0
 FQD7P20 — P-Channel QFET® MOSFET
Typical Characteristics

 



























































 






















 

 

 








 



  



  



 


















































    



 









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©2000 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FQD7P20 Rev. C0
 FQD7P20 — P-Channel QFET® MOSFET
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©2000 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FQD7P20 Rev. C0
 FQD7P20 — P-Channel QFET® MOSFET
VGS
Same
Same T
Tyype
50KΩ
50K Ω
as DUT
DUT Qg
12V 200nF
200nF
300nF
300nF

VDS
VGS Qgs Qgd

DUT
DUT
IG = const.

Charg
Charge
e

Figure 12. Gate Charge Test Circuit & Waveform

RL
VDS t on t of
offf

td(on tr td(of
VGS VDD d( on)) d( offf) tf

RG VGS
10
10%
%

VGS DUT

90%
VDS

Figure 13. Resistive Switching Test Circuit & Waveforms

L BVDS
1 DSSS
VDS EAS = ---- L IAS2 -------
-----------
--------
---------
-----
2 BVDSDSSS - VDD

tp Tim
Time
ID

RG VDD VDS (t)

VDD
ID (t
(t))
VGS DUT
DUT
IAS
tp BVDSS

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

©2000 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FQD7P20 Rev. C0
 FQD7P20 — P-Channel QFET® MOSFET
+

VDS

DUT _

I SD
L

Driver
Driv er
RG
Compliment of DUT
Comp
(N-C
(N-Channel
hannel)) VDD

VGS • dv/dt contntrrolled by RG

• ISD con
onttrol
ollled by pu
pullse pe
perriod

Gate Pul ulsse W idth

VGS D = --------------------------
Gate
Ga te Pu Perriod
Pullse Pe 10
10VV
( Driv
Driver
er )

Body
Bo dy Diod
odee Reverse Curren
entt
I SD
( DUT ) IRM

di//dt
di

IFM , Bo
Body
dy Diod
odee For
orw
ward Curren
entt
VDS VSD
( DUT )

Body
Bo dy Diode VDD
For
Forw
ward Vol
olttag
agee Drop
Drop

Body
Bo dy Di
Diod
odee Recov
coveery dv
dv/d
/dtt

Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

©2000 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com

FQD7P20 Rev. C0
 FQD7P20 — P-Channel QFET® MOSFET
Mechanical Dimensions

Figure 16. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-003

©2000 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com

FQD7P20 Rev. C0
 FQD7P20 — P-Channel QFET® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™ F-PFS™ Sync-Lock™
AX-CAP®* FRFET® ® tm
®*
SM ®
BitSiC™ Global Power Resource PowerTrench
Build it Now™ GreenBridge™ PowerXS™
TinyBoost®
CorePLUS™ Green FPS™ Programmable Active Droop™
® TinyBuck®
CorePOWER™ Green FPS™ e-Series™ QFET
TinyCalc™
CROSSVOLT™ Gmax™ QS™
TinyLogic®
CTL™ GTO™ Quiet Series™
TINYOPTO™
Current Transfer Logic™ IntelliMAX™ RapidConfigure™
TinyPower™
DEUXPEED® ISOPLANAR™ ™ TinyPWM™
Dual Cool™ Marking Small Speakers Sound Louder
TinyWire™
EcoSPARK® and Better™ Saving our world, 1mW/W/kW at a time™
TranSiC™
EfficentMax™ MegaBuck™ SignalWise™
TriFault Detect™
ESBC™ MICROCOUPLER™ SmartMax™
TRUECURRENT®*
® MicroFET™ SMART START™
SerDes™
MicroPak™ Solutions for Your Success™
Fairchild® MicroPak2™ SPM®
Fairchild Semiconductor® MillerDrive™ STEALTH™
MotionMax™ SuperFET® UHC®
FACT Quiet Series™
mWSaver ® SuperSOT™-3 Ultra FRFET™
FACT®
OptoHiT™ SuperSOT™-6 UniFET™
FAST®
OPTOLOGIC® SuperSOT™-8 VCX™
FastvCore™
OPTOPLANAR® SupreMOS® VisualMax™
FETBench™
SyncFET™ VoltagePlus™
FPS™
XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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THEREIN, WHICH COVERS THESE PRODUCTS.

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As used here in:
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and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or
instructions for use provided in the labeling, can be reasonably effectiveness.
expected to result in a significant injury of the user.

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PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification
Advance Information
Product Status Definition
Datasheet contains the design specifications for product development. Specifications
Formative / In Design
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

No Identification Needed Full Production
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild

Obsolete Not In Production
Semiconductor. The datasheet is for reference information only.
Rev. I66

©2000 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com

FQD7P20 Rev. C0
Mouser Electronics

Authorized Distributor

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FQD7P20TM