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2 IEEE TRANSACTIONS ON ELECTRON DEVICES
the Fourier coefficients are calculated correctly that can where the Green’s functions G for different regions are
directly affect the outcomes of the model. Subsequently, defined in the Appendix. Substituting the Green’s functions
we have deduced subthreshold current (Isub ) and subthreshold into (2), the general form of 2-D potential distribution in the
slope (SS) expressions from the potential equation derived region I , II, and III as shown in Fig. 1, are derived as follows:
using Green’s function approach. The threshold voltage roll- ∞
off is computed from parallel shifts of Ids –Vgs curves (nor- −2 sin(kn x) sinh(kn y) Dsf
n
ψ I (x, y) =
malized to W/L) between the long-channel and short-channel L kn cosh(kn tox ) εox
n=1
devices. Rest of this paper is arranged as follows. Section II ∞
2(VGS − φ)
derives the expression of channel potential by Green’s func- +
tion approach. Section III deals with subthreshold current nπ
n=1
derivation which is further extended to discuss the Vt roll-off. (1 − (−1)n ) sin(kn x) cosh(kn (tox − y))
Subthreshold slope model is taken up in Section IV. Finally, ×
cosh(k t )
Section V provides the conclusion. ∞ n ox
2 sin knI y
+
II. P OTENTIAL M ODEL BY G REEN ’ S tox sinh knI L
n=1
F UNCTION A PPROACH
Lin and Wu [15] are the first authors to propose an × AnS sinh knI (L − x) + AnD sinh knI x (3)
∞ II
analytical solution for the potential distribution of the 2 cos kn (tox − y)
2-D Poisson’s equation using Green’s function approach with ψ II (x, y) =
tsi
n=1
sinh knII L
Dirichlet boundary condition. The work has been carried out
for short channel bulk MOSFET. Initially, both oxide and × BnS sinh knII (L − x) + BnD sinh knII x
∞
silicon regions were considered as a single region to solve 2 sin(kn x)
the potential distribution in a homogeneous system with same +
L εSi kn sinh(kn tsi )
dielectric constant. Subsequently, the potential equation is n=1
improved by considering the interface problem for different × Dsf n
cosh(kn (tox + tsi − y))
dielectric by image-charge method, in which, the potential − Dsb n
cosh(kn (tox − y))
distribution satisfies continuities of both transverse electric ∞
2 Q nB cos(knII (tox − y))
field and normal electric displacement [15]. In a later work on + 2
SOI MOSFET, on the other hand, the same group [11] has tsi knII
n=1
II
avoided the complexity in dealing with the equivalent charge sinh kn (L − x) + sinh knII x
densities between the regions of different dielectric materi- × 1−
sinh knII L
als. A multizone solution with mixed boundary conditions
(both Dirichlet and Neumann) is used to exactly solve the + ψ(0) + x VDS /L − q Na− x(L − x)/2εSi (4)
∞
2-D Poisson’s equation in three regions with different 2 sin(kn x) sinh(kn (2tox + tsi − y)) D n
dielectrics. The mixed boundary condition is similar to Rat- ψ III (x, y) = sb
L kn cosh(kn tox ) εox
nakumar and Meindl’s [16] analytical approach to solve n=1
∞
2-D Poisson’s equation in silicon region. A similar multizone 2(VGS − φ)
solution with mixed boundary conditions has also been used +
nπ
n=1
to derive Vth of fully depleted Si-SOI MESFET [12]. Later
(1 − (−1)n ) sin(kn x) cosh(kn (tox + tsi − y))
in 2011, two different groups have reported analytical model ×
of DG-MOSFET by use of the same multizone solution with cosh(kn tox )
∞
mixed boundary conditions [13], [14]. 2 sin knI (tsi + 2tox − y)
For weak inversion operation the 2-D Poisson equation for +
tox sinh knI L
potential ψ (x, y) in the channel region can be written as
n=1
× CnS sinh knI (L − x) + CnD sinh knI x (5)
∂ 2ψ ∂ 2ψ q Na−
+ = . (1)
∂x2 ∂y 2 εSi where the Fourier coefficients AnS , AnD , BnS , BnD , Q nB , CnS ,
Using Green’s theorem, specific properties of Green’s func- and CnD are defined in the Appendix. It is also highlighted
tion ∇ 2 G = −∂ (x − x )(y − y ) and applying both dirichlet that the Fourier coefficients BnS , BnD , and Q nB would vanish
boundary conditions at surface and neumann boundary con- except for n = 0, i.e., Q 0B = −q Na− , B0S = ψ (0) and B0D =
ditions at Si–SiO2 interfaces, the solution to the Poisson’s ψ (0) + VDS . This leads to inclusion of (0), VDS , and qNa
equation (1) is derived as [17] as last term in (4). It is to be noted that (0) is selected
as E g /(2q) throughout our analysis since the energy levels
ρ(x , y )
ψ(x, y) = G(x, y; x , y )d x d y of the DG-MOSFET is referenced to electron quasi-Fermi
ε level or the conduction band of n+ source. Similarly, φ is
∂ψ(x , y ) the work function difference between gate electrodes (φm ) and
+ G(x, y; x , y )d S
∂n silicon (χ + E g /2q), considering the fact that the body of
∂ G(x, y; x , y ) DG-MOSFET is not charge neutral in general. Nevertheless,
− ψ(x , y ) dS (2)
∂n midgap gate work function is selected throughout our analysis.
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NANDI et al.: ANALYTICAL MODELING OF DG-MOSFET 3
Fig. 5. Threshold voltage roll-off at (a) different tox and (b) different tsi .
V. C ONCLUSION
Green’s function approach, derived with multizone and
mixed boundary conditions with accurate Fourier coefficients
calculation, provides an exact solution to 2-D Poisson’s equa-
tion in channel and oxide regions without any approximation.
Therefore, it is physically sound in terms of accuracy and
prediction of channel potential and subthreshold current of
both long and short channel DG-MOSFET. The approach is
also equally good at predicting channel electrostatics of lower
tsi /tox ratio based devices where the S/D lateral electric field
is of paramount importance. It is observed that the results pre-
dicted by the analytical model derived from Green’s function
approach match well with those from TCAD sentaurus device
simulation.
A PPENDIX
The Green’s functions for region I, II, and III are defined
as follows:
Fig. 7. SS variation with (a) L, (b) tox , and (c) tsi .
G Ix (x, y; x , y )
selected as the subthreshold current of the long-channel device ∞
at Vgs0 = Vt 0 − E g /4q. Where Vt 0 is extracted from linear 2 sin (kn x) sin (kn x )
=
extrapolation of Ids –Vgs curves at Vds = 0.1 V. Fig. 5(a) L kn cosh (kn tox )
n=1
shows the threshold voltage roll-off with the variation of tox ,
sinh(kn y) cosh(kn (tox − y )), (y < y )
whereas Fig. 5(b) shows the threshold voltage roll-off with the ×
variation of tsi . We observe slight mismatch in Vt roll-off at sinh(kn y ) cosh(kn (tox − y)), (y > y )
shorter gate lengths. This may be attributed to the fact that,
Vt is extracted by a constant current method and we have G Iy (x, y; x , y )
∞
not considered any quasi-ballistic effects in Green’s function 2 sin knI y sin knI y
approach that start dominating the overall current flowing =
tox knI sinh knI L
through the channel at shorter gate lengths [26]. n=1
Fig. 6 shows the Vt roll-off of DG-MOSFET at high sinh knI x sinh knI (L − x ) , (x < x )
and low drain bias. The change in Vt with drain bias is an ×
indication of DIBL effect that is pronounced at shorter gate sinh knI x sinh knI (L − x) , (x > x )
lengths due to increasing penetration of lateral electric field G IIx (x, y; x , y )
into the channel region of the device. ∞
2 sin (kn x) sin (kn x )
=
IV. S UBTHRESHOLD S LOPE M ODEL L kn sinh (kn tsi )
n=1
Considering the fact that the subthreshold current is propor-
tional to the inversion charge n i e(ψ (xmin ,ym )/v t ) , we define a cosh(kn (tox − y)) cosh(kn (tox + tsi − y )), (y < y )
×
simplified expression of SS as cosh(kn (tox − y )) cosh(kn (tox + tsi − y)), (y > y )
SS ∼ 2.3v t (∂ψ(x min , ym )/∂ Vgs )−1 (12) G IIy (x, y; x , y )
∞
Subsequently, we derive the expression of c cos knII (tox − y) cos knII (tox − y )
∂ψ (x min , ym )/∂ Vgs using Green’s function approach =
tsi knII sinh knII L
as n=0
∂ψ(x min , ym )
∞
4 sin(kn x min ) cosh(kn tsi /2) ∂ Dsf
n sinh knII x sinh knII (L − x ) , (x < x )
= (13) × II II
∂ Vgs L εSi kn sinh(kn tsi ) ∂ Vgs sinh kn x sinh kn (L − x) , (x > x )
n=1
y (x, y; x , y )
G III [2] Q. Xie, J. Xu, and Y. Taur, “Review and critique of analytic models of
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where kn = nπ/L, knI = (2n − 1)π/2tox and knII = nπ/tsi .
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Bn =
S
[9] D. J. Frank, Y. Taur, and H.-S. P. Wong, “Generalized scale length
t
oxtox +tsi for two-dimensional effects in MOSFETs,” IEEE Electron Device Lett.,
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D
ψ II (L, y ) cos knII (tox − y ) d y [10] X. Liang and Y. Taur, “A 2-D analytical solution for SCEs in
tox
2tox +tsi
DG MOSFETs,” IEEE Trans. Electron Devices, vol. 51, no. 9,
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CnS = ψ III (0, y ) sin knI (tsi + 2tox − y ) d y [11] J.-Y. Guo and C.-Y. Wu, “A new 2-D analytic threshold-voltage model
tox +tsi
2tox +tsi
for fully depleted short-channel SOI MOSFETs,” IEEE Trans. Electron
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IEEE Trans. Electron Devices, vol. 42, no. 12, pp. 2156–2162,
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n is deduced as
Dsf [17] J. D. Jackson, Classical Electrodynamics. New York, NY, USA:
McGraw-Hill, 1998.
n
Dsf = d1n + d2n − d3n /d4n (16) [18] D. S. Havaldar, G. Katti, N. DasGupta, and A. DasGupta, “Subthreshold
current model of FinFETs based on analytical solution of 3-D Poisson’s
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where Apr. 2006.
∞
2 kn sin knI tox AnS + AnD (−1)n+1 [19] A. Dey, A. Chakravorty, N. DasGupta, and A. DasGupta, “Analytical
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This article has been accepted for inclusion in a future issue of this journal. Content is final as presented, with the exception of pagination.
NANDI et al.: ANALYTICAL MODELING OF DG-MOSFET 7
[25] H. Lu, W.-Y. Lu, and Y. Taur, “Effect of body doping on double-gate Nilesh Pandey is currently pursuing the bache-
MOSFET characteristics,” Semicond. Sci. Technol., vol. 22, no. 1, 2008, lor’s degree with the Department of Electronics
Art. no. 252835. and Communication Engineering, National Insti-
[26] S. Eminente, D. Esseni, P. Palestri, C. Fiegna, L. Selmi, and E. Sangiorgi, tute of Technology Kurukshetra, Kurukshetra,
“Understanding quasi-ballistic transport in nano-MOSFETs: Part II— India.
Technology scaling along the ITRS,” IEEE Trans. Electron Devices, His current research interests include device
vol. 52, no. 12, pp. 2736–2743, Dec. 2005. modeling of multigate semiconductor devices,
and analog and digital circuit design.
Ashutosh Nandi received the Ph.D. degree from S. Dasgupta received the Ph.D. degree from IIT
IIT Roorkee, Roorkee, India, in 2015. BHU, Varanasi, India, in 2000.
He is currently an Assistant Professor with He is currently an Associate Professor with
the Department of Electronics and Communica- the Department of Electronics and Communica-
tion Engineering, National Institute of Technol- tion Engineering, IIT Roorkee, Roorkee, India.
ogy Kurukshetra, Kurukshetra, India. His current His current research interests include ultra-low
research interests include low power very large power applications, radiation effects on ICs,
scale integration design, device circuit co-design semiconductor devices, and device modeling.
in digital/analog domain, and device modeling of
multigate semiconductor devices.