Selena Patel

Professor Amos
EE-004-022
March 11, 2015
Homework #5
1. In order to find out the electrical properties of MWNTs, you have to connect one end of
the MWNT to a scanning probe microscopy tip and the other end to a liquid metal (such
as gallium and mercury).
a. It was remarkable because it was found that the resistance of the MWNT stayed
constant and also because the current density passed through the MWNT was
equivalent to 100,000 A in household Cu wire without any heating. It related to
Cu because it exhibits a type of conductance known as ballistic, where the
electrons propagate down the tube without dissipating any heat.
2. Companies such as Intel and Global Foundries are actively researching the use of carbon
nanotubes as interconnects.
3. Tensile modulus describes tensile elasticity or the tendency of an object to deform while
tensile strength is the maximum stress it withstands before failing.
4. 1,000 GPa for tensile modulus and 300 GPa for tensile strength.
5. SEM imaging of individual MWNT bonded to two AFM tips. The MWNT was welded to
each tip using an electron beam via hydrocarbon in the chamber. The tips were then
pulled apart until the MWNT fractured to measure its mechanical properties.
6. Sputtering is non-directional deposition of material, relatively low substrate heating from
deposited material, relatively low deposition rates, and relatively lower thin film
uniformity. Evaporation is directional deposition of material, substrate heating from
deposited material, relatively high deposition rates, and great thin film uniformity.
7. Isotropic is the etching that is done in all direction and anisotropic is the etching
performed in only one direction.
8. Positive resist will become soluble in developer once it is exposed to UV light, as where
photoepoxy won’t.
9. First, spin-coat photoresist on a substrate (such as silicon), results in about 1000-2000 nm
thick photoresist layer. Then UV exposure through a mask and then apply developer to
reveal the exposed patterns.
10. What is the difference between photolithography and electron beam lithography in terms
of mechanism for features generation on a resist and the minimum feature size attainable
by each?
11. Either sputtering or evaporation can be used to initially deposit a uniform layer of 5 nm
Au on a substrate. Then the FIB can be used to fabricate a single gold feature.
12. FIB is used to fabricate a single feature, unlike Lithography, which is used more towards
mass production.
13. The SEM and the TEM are both composed of a vacuum chamber, electron gun,
electromagnetic lenses, specimen stage, computer and screen, but the SEM also has
secondary electrons detector, pixel imaging, and imaging resolution of 2 nm while TEM
has florescent viewing screen, sample thinner than about 100 nm, instantaneous imaging,
imaging resolution of 0.2 nm and also used for crystal structure determination.
14. The difference is that SEM has secondary electrons detector, pixel imaging, and imaging
resolution of 2 nm while TEM has florescent viewing screen, sample thinner than about
100 nm, instantaneous imaging, imaging resolution of 0.2 nm.
15. The main limitation of a TEM sample is 100 nm.
16. The STM is not an optical microscope; instead, it works by detecting electrical forces
with a probe that tapers down to a point only a single atom across. The probe in the STM
sweeps across the surface of which an image is to be obtained. The electron shells, or
clouds, surrounding the atoms on the surface produce irregularities that are detected by
the probe and mapped by a computer into an image.
17. Non-contact AFM is the absence of repulsive forces, which is presented in contact AFM.
Because there is no repulsive force in non-contact AFM, it does not require conducting
samples.
18. The main benefit of non-contact AFM is that it does not require conducting samples.
19. The MFM tip is coated with a magnetization of some kind.
20. FIB is a device that fabricates single particles.