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2SD2390
B
Darlington (7 0Ω )
E
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1560) Application : Audio, Series Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol Ratings Unit Symbol Conditions Ratings Unit
VCBO 160 V ICBO VCB=160V 100max µA 15.6±0.4 4.8±0.2
5.0±0.2
2.0
1.8
9.6 2.0±0.1
VCEO 150 V IEBO VEB=5V 100max µA
VEBO 5 V V(BR)CEO IC=30mA 150min V
19.9±0.3
5000min∗
4.0
IC 10 A hFE VCE=4V, IC=7A a ø3.2±0.1
4.0max
20.0min
Tj 150 °C fT VCE=12V, IE=–2A 55typ MHz
3
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 95typ pF
1.05 +0.2
-0.1 0.65 +0.2
-0.1
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
70 10 7 10 –5 7 –7 0.5typ 10.0typ 1.1typ b. Lot No.
10 3 10
A
A
10 m A
2m 1. 5m A
5m
2.
8 1.2 mA 8
1m A
2
6 6
0.8mA
I C =10A
0.6mA I C =7A
p)
mp)
mp)
4 4
Tem
I C =5A
e Te
e Te
1
se
(Cas
(Cas
(Ca
I B =0.4mA
2 2
˚C
25˚C
–30˚C
125
0 0 0
0 2 4 6 0.2 0.5 1 5 10 50 100 200 0 1 2 2.5
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)
(V C E =4V) (V C E =4V)
40000 70000 3
50000
125˚C
D C Cur r ent Gai n h F E
Typ
Transient Thermal Resistance
1
10000 10000 25˚C
5000 0.5
5000 –30˚C
1000
80 10 10
0m
Cut- off F req uency f T (M H Z )
5 DC s
ith
Collect or Cur ren t I C (A)
In
Typ
fin
60
ite
he
50
at
1
si
nk
40
0.5
Without Heatsink
20 Natural Cooling
0.1
Without Heatsink
3.5
0 0.05 0
–0.02 –0.1 –1 –10 3 5 10 50 100 200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
150