STGF20M65DF2

Datasheet

Trench gate field-stop, M series, 650 V, 20 A, low-loss IGBT

Features
• High short-circuit withstand time
• VCE(sat) = 1.55 V (typ.) @ IC = 20 A
• Tight parameter distribution
• Safer paralleling
3
2 • Low thermal resistance
1
• Soft and very fast recovery antiparallel diode
TO-220FP

C (2) Applications
• Motor control
• UPS
• PFC
G (1)
• General-purpose inverters

Description
Sc12850_no_tab
E (3) This device is an IGBT developed using an advanced proprietary trench gate field-
stop structure. The device is part of the M series IGBTs, which represent an optimal
balance between inverter system performance and efficiency where the low-loss and
the short-circuit functionality is essential. Furthermore, the positive VCE(sat)
temperature coefficient and the tight parameter distribution result in safer paralleling
operation.

Product status link

STGF20M65DF2

Product summary

Order code STGF20M65DF2

Marking G20M65DF2
Package TO-220FP
Packing Tube

DS11363 - Rev 4 - October 2018 www.st.com

For further information contact your local STMicroelectronics sales office.
 STGF20M65DF2
Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VCES Collector-emitter voltage (VGE = 0) 650 V

IC(1) Continuous collector current at TC = 25 °C 40 A

IC(1) Continuous collector current at TC = 100 °C 20 A

ICP (2)
Pulsed collector current 80 A

VGE Gate-emitter voltage ±20 V

IF(1) Continuous forward current at TC = 25 °C 40 A

IF(1) Continuous forward current at TC = 100 °C 20 A

IFP(2) Pulsed forward current 80 A

Insulation withstand voltage (RMS) from all three leads to external heat sink
VISO 2.5 kV
(t = 1 s, TC = 25 °C)

PTOT Total dissipation at TC = 25 °C 32.6 W

TSTG Storage temperature range -55 to 150 °C

TJ Operating junction temperature range -55 to 175 °C

1. Limited by maximum junction temperature.

2. Pulse width limited by maximum junction temperature.

Table 2. Thermal data

Symbol Parameter Value Unit

RthJC Thermal resistance junction-case IGBT 4.6 °C/W

RthJC Thermal resistance junction-case diode 6.25 °C/W

RthJA Thermal resistance junction-ambient 62.5 °C/W

DS11363 - Rev 4 page 2/16

 STGF20M65DF2
Electrical characteristics

2 Electrical characteristics

TC = 25 °C unless otherwise specified

Table 3. Static characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

Collector-emitter breakdown
V(BR)CES VGE = 0 V, IC = 250 μA 650 V
voltage
VGE = 15 V, IC = 20 A 1.55 2.0

VGE = 15 V, IC = 20 A,
Collector-emitter saturation 1.95
VCE(sat) TJ = 125 °C V
voltage
VGE = 15 V, IC = 20 A,
2.1
TJ = 175 °C

IF = 20 A 1.85

VF Forward on-voltage IF = 20 A, TJ = 125 °C 1.65 V

IF = 20 A, TJ = 175 °C 1.55

VGE(th) Gate threshold voltage VCE = VGE, IC = 500 µA 5 6 7 V

ICES Collector cut-off current VGE = 0 V, VCE = 650 V 25 µA

IGES Gate-emitter leakage current VCE = 0 V, VGE = ± 20 V 250 nA

Table 4. Dynamic characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

Cies Input capacitance - 1688 -

Coes Output capacitance VCE = 25 V, f = 1 MHz, VGE = 0 V - 95 - pF

Cres Reverse transfer capacitance - 35 -

Qg Total gate charge VCC = 520 V, IC = 20 A, - 63 -

Qge Gate-emitter charge VGE = 0 to 15 V - 15 - nC

(see Figure 29. Gate charge test
Qgc Gate-collector charge - 26 -
circuit)

DS11363 - Rev 4 page 3/16

 STGF20M65DF2
Electrical characteristics

Table 5. IGBT switching characteristics (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time 26 - ns

tr Current rise time 10.8 - ns

(di/dt)on Turn-on current slope 1409 - A/µs

VCE = 400 V, IC = 20 A,
td(off) Turn-off delay time 108 - ns
VGE = 15 V, RG = 12 Ω
tf Current fall time (see Figure 28. Test circuit for 65 - ns
inductive load switching)
Eon(1) Turn-on switching energy 0.14 - mJ

Eoff (2)
Turn-off switching energy 0.56 - mJ

Ets Total switching energy 0.7 - mJ

td(on) Turn-on delay time 28.4 - ns

tr Current rise time 11.2 - ns

(di/dt)on Turn-on current slope VCE = 400 V, IC = 20 A, 1393 - A/µs

td(off) Turn-off delay time VGE = 15 V, RG = 12 Ω, 107 - ns

TJ = 175 °C
tf Current fall time 145 - ns
(1)
(see Figure 28. Test circuit for
Eon Turn-on switching energy inductive load switching) 0.3 - mJ

Eoff(2) Turn-off switching energy 0.85 - mJ

Ets Total switching energy 1.15 - mJ

VCC = 400 V, VGE = 13 V,

10 -
TJstart = 150 °C
tsc Short-circuit withstand time µs
VCC = 400 V, VGE = 15 V,
6 -
TJstart = 150 °C

1. Including the reverse recovery of the diode.

2. Including the tail of the collector current.

Table 6. Diode switching characteristics (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

trr Reverse recovery time - 166 ns

Qrr Reverse recovery charge IF = 20 A, VR = 400 V, - 690 nC

Irrm Reverse recovery current VGE = 15 V, di/dt = 1000 A/µs - 13.2 A

Peak rate of fall of reverse (see Figure 28. Test circuit for
dIrr/dt - 769 A/µs
recovery current during tb inductive load switching)

Err Reverse recovery energy - 81 µJ

trr Reverse recovery time - 281 ns

IF = 20 A, VR = 400 V,
Qrr Reverse recovery charge - 2010 nC
VGE = 15 V, TJ = 175 °C,
Irrm Reverse recovery current - 19.6 A
di/dt = 1000 A/µs
Peak rate of fall of reverse
dIrr/dt (see Figure 28. Test circuit for - 370 A/µs
recovery current during tb
inductive load switching)
Err Reverse recovery energy - 215 µJ

DS11363 - Rev 4 page 4/16

 STGF20M65DF2
Electrical characteristics (curves)

2.1 Electrical characteristics (curves)

Figure 1. Power dissipation vs case temperature Figure 2. Collector current vs case temperature
P TOT IGBT30101520M65FPDT IC IGBT29101520M65FCCT
(W) (A) VGE ≥ 15 V, TJ ≤ 175 °C
VGE ≥ 15 V, TJ ≤ 175 °C
30
20
25

15
20

15
10

10
5
5

0 0
-50 0 50 100 150 TC (°C) -50 0 50 100 150 TC (°C)

Figure 3. Output characteristics (TJ = 25 °C) Figure 4. Output characteristics (TJ = 175 °C)

IC IGBT29101520M65FOC25 IC IGBT29101520M65FOC175
(A) (A)

13 V V GE =15 V
60 60
V GE = 15 V 13 V
11 V

40 40
11 V

9V
20 20
9V

7V 7V
0 0
0 1 2 3 4 5 V CE (V) 0 1 2 3 4 5 V CE (V)

Figure 6. VCE(sat) vs collector current

Figure 5. VCE(sat) vs junction temperature

V CE(SAT) IGBT29101520M65FVCET
(V) V CE(SAT) IGBT29101520M65FVCEC

V GE = 15 V I C =40 A (V)
3.0 V GE = 15 V
3.0

2.6 2.6
I C =20 A T j = 25 °C
2.2 2.2
T j = 175 °C

1.8
1.8
T j = - 40 °C
I C =10 A 1.4
1.4
1.0
1
-50 0 50 100 150 T J (°C) 0.6
0 10 20 30 40 I C (A)

DS11363 - Rev 4 page 5/16

 STGF20M65DF2
Electrical characteristics (curves)

Figure 7. Collector current vs switching frequency Figure 8. Forward bias safe operating area
IC IGBT29101520M65FCCS IC IGBT29101520M65FFSOA
Rectangular current shape
(A) (duty cycle = 0.5, VCC = 400 V, RG = 12 Ω (A)
VGE = 0/15 V , Tj = 175 °C

1 µs
16

TC = 80°C
12
10 µs
101

8
TC = 100°C
100 µs
4
single pulse, TC = 25°C,
1 ms
0 100 TJ ≤175 °C, VGE = 15 V
10 0 10 1 10 2 f (kHz) 100 101 102 VCE (V)

Figure 9. Transfer characteristics Figure 10. Diode VF vs forward current

IC IGBT29101520M65FTCH VF IGBT30101520M65FDVF
(A) (V)
VCE = 6 V T j = -40 °C
60
2.2
T j = 25 °C
50
TJ = 25 °C 1.8
40
1.4
T j = 175 °C
30
1.0
20
TJ = 175 °C

10 0.6

0 0.2
6 7 8 9 10 11 VGE (V) 0 10 20 30 I F (A)

Figure 11. Normalized VGE(th) vs junction temperature Figure 12. Normalized V(BR)CES vs junction temperature

V GE(th) IGBT29101520M65FNVGE V (BR)CES IGBT29101520M65FNVBR

(Norm.) (Norm.)
VCE = VGE, IC = 500 μΑ I C = 250 µA
1.1 1.04

1.0 1.0

0.9 0.96

0.8 0.92

0.7 0.88
-50 0 50 100 150 T J (°C) -50 0 50 100 150 T J(°C)

DS11363 - Rev 4 page 6/16

 STGF20M65DF2
Electrical characteristics (curves)

Figure 13. Capacitance variations Figure 14. Gate charge vs gate-emitter voltage
C IGBT29101520M65FCVR VGE IGBT29101520M65FGCGE
(pF) (V) VCC = 520 V, IC = 20 A, IG =1mA

C ies
16
10 3

C oes 12

10 2
C res
8

10 1
f = 1 MHz 4

10 0 0
10 -1 10 0 10 1 10 2 V CE (V) 0 10 20 30 40 50 60 70 Qg (nC)

Figure 15. Switching loss vs collector current Figure 16. Switching loss vs gate resistance
E IGBT29101520M65FSLC E IGBT29101520M65FSLG
(mJ) VCC = 400 V, IC = 20 A, VGE = 15 V, Tj = 175 °C
(mJ) VCC = 400 V, RG = 12 Ω,
VGE = 15 V, TJ = 175 °C
2.4
2.0
2.0 E tot
1.6
1.6
E tot
1.2
1.2
E off E off
0.8
0.8
E on
0.4 0.4
E on

0.0 0
0 10 20 30 40 I C (A) 0 40 80 120 RG (Ω)

Figure 17. Switching loss vs temperature Figure 18. Switching loss vs collector emitter voltage
E IGBT29101520M65FSLT E IGBT29101520M65FSLV
(mJ) V CC =400 V, I C = 20 A, R g = 12 Ω, V GE = 15 V (mJ) I C = 20 A, R g = 12 Ω, V GE = 15 V, T j = 175 °C

1.4
1.0
1.2
E tot
0.8
1.0
E tot
E off
0.6 0.8
E off
0.6
0.4
0.4
E on E on
0.2
0.2
0 0
0 50 100 150 T J (°C) 150 250 350 450 V CE (V)

DS11363 - Rev 4 page 7/16

 STGF20M65DF2
Electrical characteristics (curves)

Figure 19. Short-circuit time and current vs VGE Figure 20. Switching times vs collector current

t sc IGBT29101520M65FSCV I SC t IGBT30101520M65FSTC
(µs) (A) (ns) VCC = 400 V, VGE = 15 V, RG = 12 Ω, Tj = 175°C
T j ≤ 150 °C
V CC ≤ 400 V
20 130
tf
t SC 10 2
t d(off)
15 100
t d(on)

10 70
I SC 10 1
tr

5 40

0 10 10 0
9 10 11 12 13 14 15 V GE (V) 0 10 20 30 40 IC (A)

Figure 22. Reverse recovery current vs diode current

Figure 21. Switching times vs gate resistance
slope
t IGBT29101520M65FSTR
(ns) VCC = 400 V, VGE = 15 V, IC = 20 A, Tj = 175 °C I rrm IGBT29101520M65FRRC
(A) VCC = 400 V, VGE = 15 V, IF = 20 A, TJ = 175 °C
t d(off)
tf
35
10 2
t d(on)

25
tr
10 1

15

10 0
0 40 80 120 RG (Ω) 5
200 800 1400 2000 di/dt (A/µs)

Figure 24. Reverse recovery charge vs diode current

Figure 23. Reverse recovery time vs diode current slope
slope
t rr IGBT20101520M65FRRT
(ns) VCC = 400 V, VGE = 15 V, IF = 20 A, TJ = 175 °C Q rr IGBT29101520M65FRRQ
(µC) VCC = 400 V, VGE = 15 V, IF = 20 A, TJ = 175 °C

350
2.1

300

2.05
250

200 2

150
200 800 1400 2000 di/dt (A/µs) 1.95
200 800 1400 2000 di/dt (A/µs)

DS11363 - Rev 4 page 8/16

 STGF20M65DF2
Electrical characteristics (curves)

Figure 25. Reverse recovery energy vs diode current slope

Err IGBT29101520M65FRRE
(mJ) VCC = 400 V, VGE = 15 V, IF = 20 A, Tj = 175 °C

0.25

0.20

0.15

0.10

0.05
200 800 1400 2000 di/dt (A/µs)

Figure 26. Thermal impedance for IGBT

ZthTOF2T_B

10-1

Zth
Zth= k*R
k R thj-c
thj-C

10-2 δδ==tptp/ Ƭ
/Ƭ

tpp
ƬƬ

10-3
10-5 10-4 10-3 10-2 10-1 100 tp (s)

Figure 27. Thermal impedance for diode

K GC20940

10 -1

10 -2

10 -3
10 -4 10 -3 10 -2 10 -1 10 0 t p (s)

DS11363 - Rev 4 page 9/16

 STGF20M65DF2
Test circuits

3 Test circuits

Figure 28. Test circuit for inductive load switching Figure 29. Gate charge test circuit

A A
C
L=100 µH k
G k

E B
B
C 3.3 1000 VCC
µF µF
k
G D.U.T
k
+ RG E

k
-
k

AM01504v1 AM01505v1

Figure 31. Diode reverse recovery waveform

Figure 30. Switching waveform

90%

VG 10%

90%

VCE Tr(Voff)
10%
Tcross
25
90%

IC Td(off)
10%
Td(on) Tf
Tr(Ion)
Toff
Ton

AM01506v1

DS11363 - Rev 4 page 10/16

 STGF20M65DF2
Package information

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions
and product status are available at: www.st.com. ECOPACK® is an ST trademark.

DS11363 - Rev 4 page 11/16

 STGF20M65DF2
TO-220FP package information

4.1 TO-220FP package information

Figure 32. TO-220FP package outline

7012510_Rev_12_B

DS11363 - Rev 4 page 12/16

 STGF20M65DF2
TO-220FP package information

Table 7. TO-220FP package mechanical data

mm
Dim.
Min. Typ. Max.

A 4.4 4.6
B 2.5 2.7
D 2.5 2.75
E 0.45 0.7
F 0.75 1
F1 1.15 1.70
F2 1.15 1.70
G 4.95 5.2
G1 2.4 2.7
H 10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Dia 3 3.2

DS11363 - Rev 4 page 13/16

 STGF20M65DF2

Revision history

Table 8. Document revision history

Date Revision Changes

02-Nov-2015 1 First release.

24-Feb-2016 2 Document status promoted from preliminary to production data
Updated Figure 13: "Normalized V(BR)CES vs. junction temperature . Minor
10-Mar-2016 3
text changes.
Updated Table 3. Static characteristics.
08-Oct-2018 4
Minor text changes

DS11363 - Rev 4 page 14/16

 STGF20M65DF2
Contents

Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.1 TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

DS11363 - Rev 4 page 15/16

 STGF20M65DF2

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DS11363 - Rev 4 page 16/16