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2/10/2018 MADE EASY ONLINE TEST SERIES
Chetan Kapoor
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ELECTRONIC DEVICES-1 - REPORTS
OVERALL ANALYSIS COMPARISON REPORT SOLUTION REPORT
ALL(16) CORRECT(0) INCORRECT(0) SKIPPED(16)
Chetan Kapoor
Course: GATE+ESE
Electronics Engineering(EC)
Q. 1
The intrinsic carrier concentration of silicon sample at T = 300 K is ni = 1.5 × 1010 cm-3. The thermal
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equilibrium concentration of holes is 4.5 × 1015 cm-3. The concentration of electrons is
FAQ Have any Doubt ?
MY TEST
BOOKMARKS A
2.25 × 1020 cm-3
MY PROFILE
B
REPORTS
5 × 104 cm-3
Correct Option
BUY PACKAGE
Solution :
ASK AN EXPERT (b)
https://onlinetestseriesmadeeasy.in/madeeasy/index.php?pageName=timeManagementReport&testid=17&t=a&testType=2 1/18
C
5 × 105 cm-3
D
None of these
QUESTION ANALYTICS
Q. 2
A diode is used at a temperature of 25°C, due to increase in temperature the reverse saturation current of the
diode increased by 300%. The new temperature of the diode is
A
35°C
B
45°C
Correct Option
Solution :
(b)
C
55°C
D
65°C
QUESTION ANALYTICS
Q. 3
The maximum resistivity of a silicon sample is 5 kΩ-cm. If the electron mobility μn = 1600 cm2/V-sec and the
hole mobility μp = 400 cm2/V-sec, then the intrinsic carrier concentration of the silicon sample is
A
3.90 × 1011 cm-3
B
3.90 × 1010 cm-3
C
7.81 × 1011 cm-3
Correct Option
Solution :
(c)
D
7.81 × 1010 cm-3
QUESTION ANALYTICS
Q. 4
An abrupt silicon pn junction at zero bias and at T = 300 K has a dopant concentration of Na = 1017 cm-3 on
p -side and Nd = 5 × 1015 cm-3 on n-side. The difference between fermilevel and intrinsic level on n-side will
be
(Assume VT = 0.026 V)
A
A
0.17 eV
B
0.25 eV
C
0.33 eV
Correct Option
Solution :
(c)
D
0.45 eV
QUESTION ANALYTICS
Q. 5
A p -type semiconductor, silicon sample. If the sample is doped with Boron with a concentration of 2.5 ×
1013 cm-3 and with Arsenic at a concentration of 1 × 1013 cm-3. The majority concentration is _______ × 1013
cm-3.
1.5 (1.00 - 2.00)

Correct Option
Solution :
1.5 (1.00 - 2.00)
QUESTION ANALYTICS
Q. 6
The minority carrier hole diffusion coefficient is Dp = 12 cm2/s and majority carrier electron diffusion
coefficient is Dn = 48 cm2/s. If the sum of electron and hole mobilities is 100 cm2/V-sec, then electron
mobility is ___________ (cm2/V-sec)
80 (79 - 81)
Correct Option
Solution :
80 (79 - 81)
QUESTION ANALYTICS
Q. 7
Consider the circuit shown below
Assuming VT to be 25 mV, the diffusion resistance of the diode shown above will be _____Ω .
(take η = 1)
12.5 (12.20 - 12.80)

Correct Option
Solution :
12.5 (12.20 - 12.80)
QUESTION ANALYTICS
Q. 8
Match List-I with List-II and select the correct answer using the code given below the lists:
A
a
B
b
C
c
Correct Option
Solution :
(c)
D
QUESTION ANALYTICS
Q. 9
In an n-type semiconductor, the electron concentration (n0) = 1015 cm–3 and the intrinsic carrier
concentration (ni) is 1010 cm–3. The mean life time of minority carriers is 10–6 sec. The steady state excess
hole concentration due to constant light illumination is δp = 4 × 105 cm–3. The steady state electron-hole
recombination rate is __________.
A
1021 cm-3 s-1
B
4 * 1011 cm-3 s-1
C
1015 cm-3 s-1
D
5 * 1011 cm-3 s-1
Correct Option
Solution :
(d)
QUESTION ANALYTICS
Q. 10
The zener diode shown in the figure has the specifications VZ = 5.2 V and PD max = 260 mW. Assume RZ = 0.
The maximum allowable current iz and the minimum value of RS for which zener diode remains in constant
reverse breakdown region with no danger of failure are
A
50 mA, 196 kΩ
B
50 mA, 196 Ω
Correct Option
Solution :
(b)
C
100 mA, 98 kΩ
D
100 mA, 98 Ω
QUESTION ANALYTICS
Q. 11
Consider a very lightly doped p - type semiconductor (i.e. p >> n is not valid), then using mass action law and
electrical neutrality principle, which of the following equation is valid.
(Assume only acceptor impurities are present in the material).
Correct Option
Solution :
(a)
QUESTION ANALYTICS
Q. 12
Which of the following graph correctly represents the relationship between the concentration of minority
carriers in an extrinsic semiconductor (Nm) and the doping concentration (Nd) under the thermal equilibrium
situation.
Correct Option
Solution :
(c)
( )
QUESTION ANALYTICS
Q. 13
Consider the Hall effect experimental set up shown in the figure. Assume the bar resistivity is 2 × 105Ω-cm,
the magnetic field B = 0 1 Tesla and d = w = 3 mm The measured values of the current and Hall voltage are
the magnetic field B = 0.1 Tesla, and d = w = 3 mm. The measured values of the current and Hall voltage are
20 μA and 100 mV, respectively. The value of mobility μp is ________ cm2/V-s.
750
Correct Option
Solution :
750
QUESTION ANALYTICS
Q. 14
Consider an abrupt p-n junction. When reverse biasing voltage (VR) is applied across the junction then the
capacitance seen across the junction varies with the voltage. The following graph shows the capacitance
voltage characteristics of the diode at room temperature
The built in potential of the junction will be ________ V.

0.952 (0.85 - 1.20)

Correct Option
Solution :
0.952 (0.85 - 1.20)
QUESTION ANALYTICS
Q. 15
The hole concentration in a p-type GaAs sample is given by
Where length of the sample L = 10 μm. If the hole diffusion coefficient is 10 cm2/s, then the magnitude of
the hole diffusion current density at x = 5 μm is __________ A/cm2.
16
Correct Option
Solution :
16
QUESTION ANALYTICS
Q. 16
A silicon pn j nction at T 300 K has N 1013 cm-3 and N 1017 cm-3 The b ilt in oltage is
A silicon pn junction at T = 300 K has Nd = 1013 cm 3 and Na = 1017 cm 3. The built-in voltage is ____________
mV. (ni = 1010 cm-3). (Assume VT = 26 mV)
598.78 (595 - 600)

Correct Option
Solution :
598.78 (595 - 600)
QUESTION ANALYTICS

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2/10/2018 MADE EASY ONLINE TEST SERIES

ELECTRONIC DEVICES-1 - REPORTS

OVERALL ANALYSIS COMPARISON REPORT SOLUTION REPORT

ALL(16) CORRECT(0) INCORRECT(0) SKIPPED(16)

1.5 (1.00 - 2.00)

Consider the circuit shown below

12.5 (12.20 - 12.80)

FAQ Have any Doubt ?

FAQ Have any Doubt ?

The built in potential of the junction will be ________ V.

0.952 (0.85 - 1.20)

The hole concentration in a p-type GaAs sample is given by

598.78 (595 - 600)

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