Ordering number : ENA0369 SCH2815

SANYO Semiconductors
DATA SHEET
MOSFET : N-Channel Silicon MOSFET
SBD : Schottky Barrier Diode

SCH2815 General-Purpose Switching Device

Applications
Features
• Composite type with an N-channel silicon MOSFET and a Schottky barrier diode contained in one package
facilitating high-density mounting.
• [MOSFET]
• 1.5V drive.

• [SBD]
• Short reverse recovery time.

• Low forward voltage.

Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
[MOSFET]
Drain-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage (*1) VGSS 10 V
Drain Current (DC) ID 0.7 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 2.8 A
Allowable Power Dissipation PD Mounted on a ceramic board (900mm2✕0.8mm) 1unit 0.6 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +125 °C
[SBD]
Repetitive Peak Reverse Voltage VRRM 15 V
Nonrepetitive Peak Reverse Surge Voltage VRSM 15 V
Average Output Current IO 150 mA
Surge Forward Current IFSM 50Hz sine wave, 1 cycle 2 A
Junction Temperature Tj --55 to +125 °C
Storage Temperature Tstg --55 to +125 °C
Marking : QQ

(*1) : Note, when designing a circuit using this product, that it has a gate (oxide film) protection diode connected only between its gate and source.

Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91306PE MS IM TC-00000165 No. A0369-1/6
 SCH2815

Electrical Characteristics at Ta=25°C

Ratings
Parameter Symbol Conditions Unit
min typ max
[MOSFET]
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 30 V
Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 1 µA
Gate-to-Source Leakage Current IGSS VGS=8V, VDS=0V 1 µA
Cutoff Voltage VGS(off) VDS=10V, ID=100µA 0.4 1.3 V
Forward Transfer Admittance yfs VDS=10V, ID=350mA 0.45 0.8 S
RDS(on)1 ID=350mA, VGS=4V 0.7 0.9 Ω
Static Drain-to-Source On-State Resistance RDS(on)2 ID=200mA, VGS=2.5V 0.8 1.15 Ω
RDS(on)3 ID=10mA, VGS=1.5V 1.6 2.4 Ω
Input Capacitance Ciss VDS=10V, f=1MHz 30 pF
Output Capacitance Coss VDS=10V, f=1MHz 7 pF
Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 3.5 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 8 ns
Rise Time tr See specified Test Circuit. 6 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 10 ns
Fall Time tf See specified Test Circuit. 8 ns
Total Gate Charge Qg VDS=10V, VGS=4V, ID=0.7A 1 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=4V, ID=0.7A 0.4 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4V, ID=0.7A 0.2 nC
Diode Forward Voltage VSD IS=0.7A, VGS=0V 0.93 1.2 V
[SBD]
Reverse Voltage VR IR=0.5mA 15 V
VF 1 IF=100mA 0.32 0.35 V
Forward Voltage
VF 2 IF=150mA 0.35 0.40 V
Reverse Current IR VR=6V 45 µA
Interterminal Capacitance C VR=10V, f=1MHz 9 pF
Reverse Recovery Time trr IF=IR=10mA, See specified Test Circuit. 10 ns

Package Dimensions Electrical Connection

unit : mm (typ)
7028-003
6 5 4 1 : Gate
1.6 2 : Source
0.2
3 : Anode
0.05

0.2 4 : Cathode
6 5 4
5 : Drain
6 : Drain
1.6
1.5

1 2 3 Top view
1 2 3
0.05

0.5
0.56

1 : Gate
2 : Source
3 : Anode
4 : Cathode
0.25

5 : Drain
6 : Drain

SANYO : SCH6

No. A0369-2/6
 SCH2815

Switching Time Test Circuit trr Test Circuit

[MOSFET] [SBD]

VIN VDD=15V
4V Duty≤10%
0V

10mA
ID=350mA

1mA
VIN RL=42Ω
50Ω 100Ω 10Ω
D VOUT

10mA
PW=10µs
D.C.≤1% 10µs

G --5V
trr
SCH2815
P.G 50Ω S

ID -- VDS ID -- VGS
0.4 0.8
VDS=10V
V

C
3.0

C
°
--25
2.5

75°
2.0
6.0V 0V 3.5V

Ta=

0.3 0.6
Drain Current, ID -- A

Drain Current, ID -- A

C
25°
4.

0.2 VGS=1.5V 0.4

5°C

0.1 0.2
°C
7
C

--25
Ta=
25°

0 0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Drain-to-Source Voltage, VDS -- V IT07510 Gate-to-Source Voltage, VGS -- V IT07511
RDS(on) -- VGS RDS(on) -- Ta
5.0 1.6
Ta=25°C
1.4
On-State Resistance, RDS(on) -- Ω
On-State Resistance, RDS(on) -- Ω

4.0
1.2

3.0
1.0
=2.5V
VGS
Static Drain-to-Source

mA,
Static Drain-to-Source

20 0
0.8 I D=
4.0V
350mA V S=
2.0
0.6 = 3 5 0mA, G
ID

ID=200mA 0.4
1.0
0.2

0 0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 --60 --40 --20 0 20 40 60 80 100 120 140
Gate-to-Source Voltage, VGS -- V IT10876 Ambient Temperature, Ta -- °C IT10877

No. A0369-3/6
 SCH2815
yfs -- ID IS -- VSD
3 3
VDS=10V VGS=0V
2
Forward Transfer Admittance, yfs -- S
2

1.0
7

Source Current, IS -- A
1.0
5
7
°C 3
5 --25
Ta= 2

5°C

C
°C

--25°
75

7
3

Ta=
0.1
2 7
°C

25°C
25 5

3
0.1
2
7
5 0.01
0.01 2 3 5 7 0.1 2 3 5 7 1.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Drain Current, ID -- A IT07514 Diode Forward Voltage, VSD -- V IT07515
SW Time -- ID Ciss, Coss, Crss -- VDS
3 100
VDD=15V f=1MHz
7
VGS=4V
2 5
Switching Time, SW Time -- ns

Ciss
3

Ciss, Coss, Crss -- pF

td(off) 2
10
td(on)
tf 10 Coss
7
7
tr Crss
5 5

3 2

2 1.0
0.1 2 3 5 7 1.0 0 5 10 15 20 25 30
Drain Current, ID -- A IT07516 Drain-to-Source Voltage, VDS -- V IT08960
VGS -- Qg RDS(on) -- ID
4.0 3
VDS=10V VGS=4V
3.5 ID=0.7A
On-State Resistance, RDS(on) -- Ω
Gate-to-Source Voltage, VGS -- V

2
3.0

2.5
Static Drain-to-Source

2.0 1.0
Ta=75°C
1.5 7
25°C
--25°C
1.0
5

0.5

0 3
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.01 2 3 5 7 0.1 2 3 5 7 1.0
Total Gate Charge, Qg -- nC IT10878 Drain Current, ID -- A IT07519
RDS(on) -- ID RDS(on) -- ID
3 7
VGS=2.5V VGS=1.5V
5
On-State Resistance, RDS(on) -- Ω

On-State Resistance, RDS(on) -- Ω

3
Static Drain-to-Source

Static Drain-to-Source

Ta=75°C
1.0 2 Ta=75°C
25°C
7
--25°C --25°C
25°C
1.0
5

3 5
0.01 2 3 5 7 0.1 2 3 5 7 1.0 0.01 2 3 5 7 0.1 2 3
Drain Current, ID -- A IT07520 Drain Current, ID -- A IT07521

No. A0369-4/6
 SCH2815
ASO [MOSFET] PD -- Ta [MOSFET]
5 0.8
IDP=2.8A ≤10µs
3

Allowable Power Dissipation, PD -- W

2 10
0µ
s
1.0 10 1m 0.6 M
ID=0.7A
Drain Current, ID -- A

ms ou
7 s nte
5 do
DC 10 na
0m ce
3 op s ram
er 0.4
2 ati ic
on bo
Operation in this (T ard
0.1 a= (9
area is limited by RDS(on). 25 00
7 °C mm
5 ) 2
0.2 ✕0
.8 mm
3
Ta=25°C
2 Single pulse )1
un
Mounted on a ceramic board (900mm2✕0.8mm) 1unit it
0.01 0
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 0 20 40 60 80 100 120 140 160
Drain-to-Source Voltage, VDS -- V IT10879 Ambient Temperature, Ta -- °C IT10880
IF -- VF IR -- VR
7 10000
5 7
5
3
3 Ta=125°C
2
2

100°C
Forward Current, IF -- mA

Reverse Current, IR -- µA
100 1000
7 7
5 5
3 3 75°C
5°C

2 2
12

10 100
=

7 50°C
Ta

7 5
5
3
75° C

3 2
°
50° C

25°C
100

2
10
C
C

7
25°

1.0
5
7
5 3
2
3
2 1.0
0 0.1 0.2 0.3 0.4 0.5 0.6 0 2 4 6 8 10 12 14 16
Forward Voltage, VF -- V IT06808 Reverse Voltage, VR -- V IT06809
PF(AV) -- IO C -- VR
Average Forward Power Dissipation, PF(AV) -- W

0.5 5
Rectangular wave f=1MHz
Interterminal Capacitance, C -- pF

θ
(1) (2) (4) (3)
0.4
3
360°

Sine wave
0.3 2

180°
360°
0.2

10
(1)Rectangular wave θ=60°
0.1 (2)Rectangular wave θ=120°
7
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
0 5
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 1.0 2 3 5 7 10 2 3
Average Output Current, IO -- A IT06810 Reverse Voltage, VR -- V IT06811
IFSM -- t
2.8
Current waveform 50Hz sine wave
Surge Forward Current, IFSM(Peak) -- A

2.4 IS

2.0
20ms
t
1.6

1.2

0.8

0.4

0
7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3
Time, t -- s ID00268

No. A0369-5/6
 SCH2815

Note on usage : Since the SCH2815 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.

Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
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or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.

This catalog provides information as of September, 2006. Specifications and information herein are subject
to change without notice.

PS No. A0369-6/6